Abstract: A method for fabricating shallow trench isolation structure is disclosed. The method includes the steps of: (a) providing a substrate; (b) forming a trench in the substrate; (c) forming a silicon layer in the trench; and (d) performing an oxidation process to partially transform a surface of the silicon layer into an oxide layer.

Abstract: A method for manufacturing a semiconductor structure includes the following steps. First, a semiconductor substrate is provided and a patterned pad layer is formed on the semiconductor substrate so as to expose a portion of the semiconductor substrate. Then, the semiconductor substrate exposed from the patterned pad layer is etched away to form a trench inside the semiconductor substrate. A selectively-grown material layer is selectively formed on the surface of the trench, followed by filling a dielectric precursor material into the trench. Finally, a transformation process is carried out to concurrently transform the dielectric precursor material into a dielectric material and transform the selectively-grown material layer into an oxygen-containing amorphous material layer.

Abstract: The present invention provides a centrifugal particle separation and detection device, which can separate and detect particles according to the particle size. The centrifugal particle separate and detection device is practiced with a centrifuge to separate particles, and can be applied to cancer cell detection, blood lymphocyte isolation, tissue engineering, polynucleotide hybridization, microorganism separation and detection and fine chemical purification.

Abstract: Various techniques are provided to perform clock assignments in a programmable logic device (PLD). In one example, a computer-implemented method includes receiving a design identifying operations to be performed by a programmable logic device (PLD), synthesizing the design into a plurality of components of the PLD configured to perform the operations, and performing a simulated annealing process to determine a layout of the components in the PLD based on a system cost including a clock assignment cost for global clock signals of the PLD. Additional methods, systems, machine-readable mediums, and other techniques are also provided.

Abstract: A method for fabricating shallow trench isolation structure is disclosed. The method includes the steps of: (a) providing a substrate; (b) forming a trench in the substrate; (c) forming a silicon layer in the trench; and (d) performing an oxidation process to partially transform a surface of the silicon layer into an oxide layer.

Abstract: An elastic micro high frequency probe includes a conductor, which includes a stationary body and a movable body. The stationary body has a conductive terminal, a contacting end, and a guider. The movable body has a conductive terminal, a spring mechanism, and a guider. The spring mechanism is connected to the stationary body and to one conductive terminal. The second guider connects to the spring mechanism in such a manner that the compression direction of the spring mechanism is confined by a guiding rail. Since the width of the spring mechanism is not limited by the first and second guiders, the width of the spring mechanism can be enlarged to maximize within limited space. Therefore, the HF probe as a whole can have shortest length while acquiring the predetermined total length of the elastic stroke, such that the transmission performance of the high frequency signals can be effectively enhanced.

Abstract: A two-channel magnetic resonance tomography system is provided with a regulation circuit for an amplification system in order to be able to take into account different load situations of the MRI system in a flexible and efficient manner. It is thus possible to improve the MRI measurements greatly if the MRI system is set to the respective load situation beforehand by an idle state measurement. The adaptation may optionally also be carried out during the MRI measurement. Therefore, a multiplicity of completely different load situations may be taken into account in an optimized manner by the regulation circuit.

Abstract: An air compression system includes an air compression device and a cooling structure. The air compression device includes a liquid-cooled motor and a compressor. The cooling includes a radiator, a cooler, a first liquid conveying tube, a second liquid conveying tube, a third liquid conveying tube, a fourth liquid conveying tube and a cooling liquid. The radiator interconnects the compressor for cooling a lubricating liquid in the compressor; the first liquid conveying tube interconnects the radiator and the cooler; the second liquid conveying tube interconnects the radiator and the cooler; the third liquid conveying tube interconnects the liquid-cooled motor and the cooler; the fourth liquid conveying tube interconnects the liquid-cooled motor and the cooler; and the cooling liquid is filled into the cooler, so as to reduce the space occupied by the cooling structure.

Abstract: A method for processing a high-k dielectric layer includes the following steps. A semiconductor substrate is provided, and a high-k dielectric layer is formed thereon. The high-k dielectric layer has a crystalline temperature. Subsequently, a first annealing process is performed, and a process temperature of the first annealing process is substantially smaller than the crystalline temperature. A second annealing process is performed, and a process temperature of the second annealing process is substantially larger than the crystalline temperature.

Abstract: A method for fabricating a semiconductor device is described. A gate layer, a C-doped first protective layer and a hard mask layer are formed on a substrate and then patterned to form a first stack in a first area and a second stack in a second area. A second protective layer is formed on the sidewalls of the first and the second stacks. A blocking layer is formed in the first area and a first spacer formed on the sidewall of the second protective layers on the sidewall of the second stack in the second area. A semiconductor compound is formed in the substrate beside the first spacer. The blocking layer and the first spacer are removed. The hard mask layer in the first stack and the second stack is removed.

Abstract: A method of forming a film is provided. The method includes at least the following steps. A first substrate and a second substrate are provided in a batch processing system, wherein a first surface of the first substrate is adjacent to a second surface of the second substrate, the first surface of the first substrate has a first surface condition, the second surface of the second substrate has a second surface condition, and the first surface condition is different from the second surface condition. A pretreatment gas is provided to the surfaces of the substrates for transforming the first surface condition and the second surface condition to a third surface condition. A reaction gas is provided to form the film on the surfaces, having the third surface condition, of the substrates.

Abstract: A method for manufacturing a semiconductor structure includes the following steps. First, a semiconductor substrate is provided and a patterned pad layer is formed on the semiconductor substrate so as to expose a portion of the semiconductor substrate. Then, the semiconductor substrate exposed from the patterned pad layer is etched away to form a trench inside the semiconductor substrate. A selectively-grown material layer is selectively formed on the surface of the trench, followed by filling a dielectric precursor material into the trench. Finally, a transformation process is carried out to concurrently transform the dielectric precursor material into a dielectric material and transform the selectively-grown material layer into an oxygen-containing amorphous material layer.

Abstract: The present invention provides a centrifugal particle separation and detection device, which can separate and detect particles according to the particle size. The centrifugal particle separate and detection device is practiced with a centrifuge to separate particles, and can be applied to cancer cell detection, blood lymphocyte isolation, tissue engineering, polynucleotide hybridization, microorganism separation and detection and fine chemical purification.

Abstract: A power driven component inside a compressor is disposed with a stator and rotors. The stator has an iron core in a circular ring and stator coils in a tightly wound manner. A vertical interval is formed between adjacent stator coils. A cover body is formed on the stator and a shield member that is formed with an upper portion along each stator coil and bending curve portions at two sides of the upper portion. Each bending curve portion is extended toward the interval from the upper portion. A sealed cover portion is connected between the bending curve portions of the upper portion and correspondingly seals each interval to reduce noise of the compressor and oil circulation rate.

Abstract: A touch input device includes a substrate, plural sensible conductive layers and plural first switch units. The substrate is provided with an upper surface, the sensible conductive layers are all configured on the upper surface and are arranged in columns and rows. The first switch units are configured on the substrate and are electrically connected with the sensible conductive layers. By the first switch units, same columns of the sensible conductive layers can conduct electrically with one another and same rows of the sensible conductive layers can conduct electrically with one another.

Abstract: A manufacturing method for a metal gate includes providing a substrate having at least a semiconductor device with a conductivity type formed thereon, forming a gate trench in the semiconductor device, forming a work function metal layer having the conductivity type and an intrinsic work function corresponding to the conductivity type in the gate trench, and performing an ion implantation to adjust the intrinsic work function of the work function metal layer to a target work function.

Abstract: A method for fabricating a semiconductor device is described. A gate layer, a C-doped first protective layer and a hard mask layer are formed on a substrate and then patterned to form a first stack in a first area and a second stack in a second area. A second protective layer is formed on the sidewalls of the first and the second stacks. A blocking layer is formed in the first area and a first spacer formed on the sidewall of the second protective layers on the sidewall of the second stack in the second area. A semiconductor compound is formed in the substrate beside the first spacer. The blocking layer and the first spacer are removed. The hard mask layer in the first stack and the second stack is removed.

Abstract: A power driven component inside a compressor is disposed with a stator and rotors. The stator has an iron core in a circular ring and a plurality of stator coils in concentrated winding manner. An interval vertically passing through is formed between adjacent stator coils. A cover body is formed on the stator and a shield member that is formed with an upper portion along each stator coil and bending curve portions at two sides of the upper portion. Each bending curve portion is extended toward the interval from the upper portion. A sealed cover portion is connected between the bending curve portions of the upper portion and correspondingly seals each interval to reduce noise of the compressor and oil circle rate.

Abstract: A method for processing a high-k dielectric layer includes the following steps. A semiconductor substrate is provided, and a high-k dielectric layer is formed thereon. The high-k dielectric layer has a crystalline temperature. Subsequently, a first annealing process is performed, and a process temperature of the first annealing process is substantially smaller than the crystalline temperature. A second annealing process is performed, and a process temperature of the second annealing process is substantially larger than the crystalline temperature.