Patents by Inventor Chih-Huang Lai

Chih-Huang Lai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220052220
    Abstract: A method for recovering a resource from a CIGS thin-film solar cell to be recycled includes a) providing the CIGS thin-film solar cell, and b) subjecting the CIGS thin-film solar cell to a cooling treatment at a predetermined temperature, such that a light absorbing unit of the CIGS thin-film solar cell can be recovered due to thermal strain difference of materials of the CIGS thin-film solar cell.
    Type: Application
    Filed: October 23, 2020
    Publication date: February 17, 2022
    Applicant: National Tsing Hua University
    Inventors: Chih-Huang LAI, Wei-Sheng CHEN, Yu-Lun CHUEH, Fan-Wei LIU, Tzu-Ming CHENG
  • Patent number: 11171285
    Abstract: Provided is a non-ferromagnetic spacing composite layer, comprising first, second and third spacing layers stacked in sequence. The first and third spacing layers are each made of Re, Rh, Ir, W, Mo, Ta, or Nb, and the second spacing layer is made of Ru. The second spacing layer has a thickness of equal to or more than 0.18 nm, and the non-ferromagnetic spacing composite layer has a total thickness of 0.6 nm to 1 nm. Also, provided are a method of preparing the non-ferromagnetic spacing composite layer, a synthetic antiferromagnetic laminated structure, and an MRAM. The synthetic antiferromagnetic laminated structure can maintain a certain coupling strength and the RKKY indirect interaction after thermal treatment, thereby keeping the recording function of MRAM.
    Type: Grant
    Filed: December 4, 2020
    Date of Patent: November 9, 2021
    Assignee: SOLAR APPLIED MATERIALS TECHNOLOGY CORP.
    Inventors: Chih-Huang Lai, Chun-Liang Yang, Yi-Huan Chung, Wei-Chih Huang, Chih-Wen Tang, Hui-Wen Cheng
  • Patent number: 10753917
    Abstract: A hydrogen sensing device includes a multi-layered structure member. The multi-layered structure member includes a stack of alternatingly disposed magnetic layers and non-ferromagnetic layers. One of the magnetic layers is a topmost layer of the multi-layered structure member. The topmost layer includes a palladium-based material to detect hydrogen.
    Type: Grant
    Filed: May 11, 2018
    Date of Patent: August 25, 2020
    Assignee: NATIONAL CHIAO TUNG UNIVERSITY
    Inventors: Yuan-Chieh Tseng, Jaw-Yeu Liang, Yun-Chieh Pai, Yu-Jung Chou, Wen-Chin Lin, Chih-Huang Lai
  • Publication number: 20180328902
    Abstract: A hydrogen sensing device includes a multi-layered structure member. The multi-layered structure member includes a stack of alternatingly disposed magnetic layers and non-ferromagnetic layers. One of the magnetic layers is a topmost layer of the multi-layered structure member. The topmost layer includes a palladium-based material to detect hydrogen.
    Type: Application
    Filed: May 11, 2018
    Publication date: November 15, 2018
    Applicant: NATIONAL CHIAO TUNG UNIVERSITY
    Inventors: Yuan-Chieh TSENG, Jaw-Yeu Liang, Yun-Chieh Pai, Yu-Jung Chou, Wen-Chin Lin, Chih-Huang Lai
  • Patent number: 9929210
    Abstract: A spin-orbit torque magnetic random access memory includes a substrate, and an SOT memory cell disposed on the substrate and including a magnetic free layer including a ferromagnetic first metal layer, an anti-ferromagnetic second metal layer, and a third metal layer for generating spin-Hall effect. The first metal layer has a thickness ranging from 0.5 nm to 1.5 nm and exhibits perpendicular magnetic anisotropy (PMA). The second metal layer has a thickness greater than 6 nm for providing an exchange bias field. The second metal layer is an IrMn layer not undergone out-of-plane magnetic annealing or coating and exhibiting no PMA. The magnetic free layer has a coercive magnetic field (Hc) upon reaching the critical current density, and |HEB|>|Hc|.
    Type: Grant
    Filed: February 17, 2017
    Date of Patent: March 27, 2018
    Assignee: NATIONAL TSING HUA UNIVERSITY
    Inventors: Chih-Huang Lai, Ming-Han Tsai, Kuo-Feng Huang
  • Publication number: 20170309772
    Abstract: A method for manufacturing a large-area thin film solar cell includes the steps of: (a) forming a first contact layer on a substrate; (b) forming a multi-layer metal precursor film on the first contact layer, which includes the sub-steps of (b1) sputtering a first multinary metal precursor layer on the first contact layer, the first multinary metal precursor layer containing Cu, Ga and KF, and (b2) sputtering an In-containing precursor layer on the first multinary metal precursor layer; and (c) subjecting the multi-layer metal precursor film to selenization to form an absorber layer having a chalcopyrite phase.
    Type: Application
    Filed: September 26, 2016
    Publication date: October 26, 2017
    Inventors: Chih-Huang LAI, Chung-Hao CAI
  • Publication number: 20170301727
    Abstract: A spin-orbit torque magnetic random access memory includes a substrate, and an SOT memory cell disposed on the substrate and including a magnetic free layer including a ferromagnetic first metal layer, an anti-ferromagnetic second metal layer, and a third metal layer for generating spin-Hall effect. The first metal layer has a thickness ranging from 0.5 nm to 1.5 nm and exhibits perpendicular magnetic anisotropy (PMA). The second metal layer has a thickness greater than 6 nm for providing an exchange bias field. The second metal layer is an IrMn layer not undergone out-of-plane magnetic annealing or coating and exhibiting no PMA. The magnetic free layer has a coercive magnetic field (Hc) upon reaching the critical current density, and |HEB|>|Hc|.
    Type: Application
    Filed: February 17, 2017
    Publication date: October 19, 2017
    Applicant: National Tsing Hua University
    Inventors: Chih-Huang LAI, Ming-Han TSAI, Kuo-Feng HUANG
  • Patent number: 9767836
    Abstract: A method for making an ordered magnetic alloy includes (a) providing a thermally conductive base having opposite first and second surfaces; (b) forming a thermal barrier layer on the first surface of the thermally conductive base; (c) forming a disordered magnetic alloy layer on the thermal barrier layer, the disordered magnetic alloy layer being made from a disordered alloy which contains a first metal selected from Fe, Co, and Ni, and a second metal selected from Pt and Pd; and (d) after step (c), applying a transient heat to the thermally conductive base to cause rapid thermal expansion of the thermally conductive base, which, in turn, causes generation of an in-plane tensile stress in the disordered magnetic alloy layer.
    Type: Grant
    Filed: October 25, 2013
    Date of Patent: September 19, 2017
    Assignee: NATIONAL TSING HUA UNIVERSITY
    Inventors: Chih-Huang Lai, Liang-Wei Wang, Yun-Chung Wu, Wen-Chieh Shih
  • Patent number: 9666256
    Abstract: An SOT-MRAM comprises a substrate, and an SOT memory cell disposed on the substrate and including a magnetic free layer. The magnetic free layer includes a first metal film exhibiting ferromagnetic characteristics, and a second metal film for generating a spin-Hall effect. The first metal film has a thickness sufficient to allow the magnetic free layer, after being applied with a first external magnetic field which is subsequently removed, to have a magnetization ratio ranging from ?0.9 to 0.9. The first metal film, upon being applied with a second external magnetic field and an electric pulse, has multiple magnetic domains when a current density resulting from the electric pulse is greater than a critical value.
    Type: Grant
    Filed: December 9, 2016
    Date of Patent: May 30, 2017
    Assignee: NATIONAL TSING HUA UNIVERSITY
    Inventors: Chih-Huang Lai, Kuo-Feng Huang, Hsiu-Hau Lin, Ding-Shuo Wang, Ming-Han Tsai
  • Patent number: 9466786
    Abstract: A magnetic electronic device comprises a substrate, a first buffer layer, a first CoFeB layer, a first metal oxidation layer, a second buffer and a capping layer. The first buffer layer is disposed on the substrate. The first CoFeB layer is disposed on the first buffer layer. The first metal oxidation layer is disposed on the first CoFeB layer. The second buffer is disposed on the first metal oxidation layer, and the material of the second buffer layer includes platinum, palladium, tantalum or their any combination. The capping layer disposed on the second buffer. A manufacturing method of the magnetic electronic device is also disclosed.
    Type: Grant
    Filed: July 23, 2015
    Date of Patent: October 11, 2016
    Assignee: NATIONAL TSING HUA UNIVERSITY
    Inventors: Chih-Huang Lai, Ding-Shuo Wang
  • Patent number: 9379316
    Abstract: One method includes forming an anti-ferromagnetic layer on a substrate. A ferromagnetic layer may be formed on the anti-ferromagnetic layer. The ferromagnetic layer includes a first, second and third portions where the second portion is located between the first and third portions. A first ion irradiation is performed to only one portion of the ferromagnetic layer. A second ion irradiation is performed to another portion of the ferromagnetic layer.
    Type: Grant
    Filed: January 31, 2014
    Date of Patent: June 28, 2016
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chih-Huang Lai, Sheng-Huang Huang, Kuo-Feng Huang, Ming-Te Liu, Chun-Jung Lin, Ya-Chen Kao, Wen-Cheng Chen
  • Publication number: 20150325784
    Abstract: A magnetic electronic device comprises a substrate, a first buffer layer, a first CoFeB layer, a first metal oxidation layer, a second buffer and a capping layer. The first buffer layer is disposed on the substrate. The first CoFeB layer is disposed on the first buffer layer. The first metal oxidation layer is disposed on the first CoFeB layer. The second buffer is disposed on the first metal oxidation layer, and the material of the second buffer layer includes platinum, palladium, tantalum or their any combination. The capping layer disposed on the second buffer. A manufacturing method of the magnetic electronic device is also disclosed.
    Type: Application
    Filed: July 23, 2015
    Publication date: November 12, 2015
    Inventors: Chih-Huang LAI, Ding-Shuo WANG
  • Patent number: 9123887
    Abstract: A magnetic electronic device comprises a substrate, a buffer layer, a first CoFeB layer, a first metal oxidation layer and a capping layer. The buffer layer is disposed above the substrate. The first CoFeB layer is disposed above the buffer layer. The first metal oxidation layer is disposed above the first CoFeB layer. The capping layer is disposed above the first metal oxidation layer and covers the first metal oxidation layer. A manufacturing method of the magnetic electronic device is also disclosed.
    Type: Grant
    Filed: October 25, 2013
    Date of Patent: September 1, 2015
    Assignee: NATIONAL TSING HUA UNIVERSITY
    Inventors: Chih-Huang Lai, Ding-Shuo Wang
  • Publication number: 20140366990
    Abstract: A method for making an ordered magnetic alloy includes (a) providing a thermally conductive base having opposite first and second surfaces; (b) forming a thermal barrier layer on the first surface of the thermally conductive base; (c) forming a disordered magnetic alloy layer on the thermal barrier layer, the disordered magnetic alloy layer being made from a disordered alloy which contains a first metal selected from Fe, Co, and Ni, and a second metal selected from Pt and Pd; and (d) after step (c), applying a transient heat to the thermally conductive base to cause rapid thermal expansion of the thermally conductive base, which, in turn, causes generation of an in-plane tensile stress in the disordered magnetic alloy layer.
    Type: Application
    Filed: October 25, 2013
    Publication date: December 18, 2014
    Applicant: National Tsing Hua University
    Inventors: Chih-Huang LAI, Liang-Wei WANG, Yun-Chung WU, Wen-Chieh SHIH
  • Publication number: 20140252515
    Abstract: A magnetic electronic device comprises a substrate, a buffer layer, a first CoFeB layer, a first metal oxidation layer and a capping layer. The buffer layer is disposed above the substrate. The first CoFeB layer is disposed above the buffer layer. The first metal oxidation layer is disposed above the first CoFeB layer. The capping layer is disposed above the first metal oxidation layer and covers the first metal oxidation layer. A manufacturing method of the magnetic electronic device is also disclosed.
    Type: Application
    Filed: October 25, 2013
    Publication date: September 11, 2014
    Applicant: National Tsing Hua University
    Inventors: Chih-Huang LAI, Ding-Shuo WANG
  • Publication number: 20140141533
    Abstract: One method includes forming an anti-ferromagnetic layer on a substrate. A ferromagnetic layer may be formed on the anti-ferromagnetic layer. The ferromagnetic layer includes a first, second and third portions where the second portion is located between the first and third portions. A first ion irradiation is performed to only one portion of the ferromagnetic layer. A second ion irradiation is performed to another portion of the ferromagnetic layer.
    Type: Application
    Filed: January 31, 2014
    Publication date: May 22, 2014
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chih-Huang Lai, Sheng-Huang Huang, Kuo-Feng Huang, Ming-Te Liu, Chun-Jung Lin, Ya-Chen Kao, Wen-Cheng Chen
  • Patent number: 8658293
    Abstract: A magnetic recording medium includes: a substrate, and a magnetic recording layer that is made from a material having the chemical formula of FexMnyPtz, and that has a bottom surface and an upper surface; wherein x, y, and z indicate average atomic concentrations for Fe, Mn, and Pt, and x+y+z is 100, x and y being greater than 0 and not greater than 65, z being in the range from 35 to 60; and wherein atomic concentration of Fe is gradually decreased from the upper surface to the bottom surface, and atomic concentration of Mn is gradually increased from the upper surface to the bottom surface so that the ferromagnetic property of the magnetic recording layer is gradually reduced from the upper surface to the bottom surface.
    Type: Grant
    Filed: June 11, 2012
    Date of Patent: February 25, 2014
    Assignee: National Tsing Hua University
    Inventors: Chih-Huang Lai, Hao-Cheng Hou, Chao-Chien Chiang
  • Patent number: 8648401
    Abstract: A semiconductor memory device includes a first ferromagnetic layer magnetically pinned and positioned within a first region of a substrate; a second ferromagnetic layer approximate the first ferromagnetic layer; and a barrier layer interposed between the first ferromagnetic layer and the first portion of the second ferromagnetic layer. The second ferromagnetic layer includes a first portion being magnetically free and positioned within the first region; a second portion magnetically pinned to a first direction and positioned within a second region of the substrate, the second region contacting the first region from a first side; and a third portion magnetically pinned to a second direction and positioned within a third region of the substrate, the third region contacting the first region from a second side.
    Type: Grant
    Filed: September 17, 2010
    Date of Patent: February 11, 2014
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chih-Huang Lai, Sheng-Huang Huang, Kuo-Feng Huang, Ming-Te Liu, Chun-Jung Lin, Ya-Chen Kao, Wen-Cheng Chen
  • Publication number: 20130084469
    Abstract: A magnetic recording medium includes: a substrate, and a magnetic recording layer that is made from a material having the chemical formula of FexMnyPtz, and that has a bottom surface and an upper surface; wherein x, y, and z indicate average atomic concentrations for Fe, Mn, and Pt, and x+y+z is 100, x and y being greater than 0 and not greater than 65, z being in the range from 35 to 60; and wherein atomic concentration of Fe is gradually decreased from the upper surface to the bottom surface, and atomic concentration of Mn is gradually increased from the upper surface to the bottom surface so that the ferromagnetic property of the magnetic recording layer is gradually reduced from the upper surface to the bottom surface.
    Type: Application
    Filed: June 11, 2012
    Publication date: April 4, 2013
    Inventors: Chih-Huang LAI, Hao-Cheng Hou, Chao-Chien Chiang
  • Patent number: 8366994
    Abstract: A method for manufacturing a cobalt (Co) alloy-based ceramic composite sputtering target is provided. A cobalt ingot and a chromium (Cr) ingot are melted in vacuum and then nebulized to form a cobalt-chromium (CoCr) alloy powder. Additionally, a ceramic powder and a platinum powder are wetly mixed to form a platinum-ceramic (Pt-ceramic) slurry, in which the ceramic powder is applied onto the platinum powder's surface uniformly. Next, the CoCr alloy powder and the Pt-ceramic slurry are wetly mixed to form a CoCrPt-ceramic slurry. Thereafter, the CoCrPt-ceramic slurry is dried, molded and compressed to form the cobalt alloy-based ceramic composite sputtering target. The resulted cobalt alloy-based ceramic composite sputtering target, which has a fine and dense structure, uniform composition and lower magnetic permeability, is beneficial to a magnetron sputter deposition process, as well as a film sputtering process used in the magnetic recording industry.
    Type: Grant
    Filed: November 4, 2010
    Date of Patent: February 5, 2013
    Assignee: China Steel Corporation
    Inventors: Rong-Zhi Chen, Chun-Hao Chiu, Jui-Tung Chang, Deng-Far Hsu, Chih-Huang Lai