Abstract: A method for manufacturing a cobalt (Co) alloy-based ceramic composite sputtering target is provided. A cobalt ingot and a chromium (Cr) ingot are melted in vacuum and then nebulized to form a cobalt-chromium (CoCr) alloy powder. Additionally, a ceramic powder and a platinum powder are wetly mixed to form a platinum-ceramic (Pt-ceramic) slurry, in which the ceramic powder is applied onto the platinum powder's surface uniformly. Next, the CoCr alloy powder and the Pt-ceramic slurry are wetly mixed to form a CoCrPt-ceramic slurry. Thereafter, the CoCrPt-ceramic slurry is dried, molded and compressed to form the cobalt alloy-based ceramic composite sputtering target. The resulted cobalt alloy-based ceramic composite sputtering target, which has a fine and dense structure, uniform composition and lower magnetic permeability, is beneficial to a magnetron sputter deposition process, as well as a film sputtering process used in the magnetic recording industry.

Abstract: A method for making a solar cell includes: (a) forming over a substrate a photoelectric transformation layer that is made of a chalcopyrite-based photovoltaic material; (b) performing an ion milling treatment, in which ions are injected to an upper surface of the photoelectric transformation layer at an ion incident angle with respect to the upper surface to partially etch the photoelectric transformation layer, so that the photoelectric transformation layer is formed with a plurality of nano-pillar structures, the ion incident angle ranging from 0° to 90°; and (c) forming an electrode unit to transmit electricity from the photoelectric transformation layer.

Abstract: A semiconductor memory device includes a first ferromagnetic layer magnetically pinned and positioned within a first region of a substrate; a second ferromagnetic layer approximate the first ferromagnetic layer; and a barrier layer interposed between the first ferromagnetic layer and the first portion of the second ferromagnetic layer. The second ferromagnetic layer includes a first portion being magnetically free and positioned within the first region; a second portion magnetically pinned to a first direction and positioned within a second region of the substrate, the second region contacting the first region from a first side; and a third portion magnetically pinned to a second direction and positioned within a third region of the substrate, the third region contacting the first region from a second side.

Abstract: A method for manufacturing a cobalt (Co) alloy-based ceramic composite sputtering target is provided. A cobalt ingot and a chromium (Cr) ingot are melted in vacuum and then nebulized to form a cobalt-chromium (CoCr) alloy powder. Additionally, a ceramic powder and a platinum powder are wetly mixed to form a platinum-ceramic (Pt-ceramic) slurry, in which the ceramic powder is applied onto the platinum powder's surface uniformly. Next, the CoCr alloy powder and the Pt-ceramic slurry are wetly mixed to form a CoCrPt-ceramic slurry. Thereafter, the CoCrPt-ceramic slurry is dried, molded and compressed to form the cobalt alloy-based ceramic composite sputtering target. The resulted cobalt alloy-based ceramic composite sputtering target, which has a fine and dense structure, uniform composition and lower magnetic permeability, is beneficial to a magnetron sputter deposition process, as well as a film sputtering process used in the magnetic recording industry.

Abstract: A method for ordering a disordered alloy includes: (a) forming a layer of a first alloy on a substrate, the first alloy being composed of a first metal and a second metal, and having a meta-stable phase of a face-centered cubic (FCC) crystal structure; (b) forming a layer of a third metal on the layer of the first alloy to form a layer unit including the layer of the first alloy and the layer of the third metal; and (c) annealing the layer unit to cause interdiffusion of atoms of the first and third metals between the layer of the first alloy and the layer of the third metal so as to form an ordered second alloy composed of the second and third metals. The first metal is insoluble in the second alloy composed of the second and third metals, and has a diffusion constant greater than those of the second and third metals.

Abstract: A perpendicular magnetic recording medium includes a substrate, an antiferromagnetic layer disposed above the substrate, and a perpendicular magnetic recording layer formed on the antiferromagnetic layer and exchange-coupled to the antiferromagnetic layer.

Abstract: A target adapted for a sputtering process for making a compound film layer of a thin film solar cell includes a composition having a formula of CuB1-xCxSeyS2-y, wherein B and C are independently selected from Group IIIA elements; x ranges from 0 to 1; and y ranges from 0 to 2. A thin film solar cell made by sputtering using the target and a method of making the thin film solar cell are also disclosed. Specifically, the thin film solar cell includes a compound film formed with substantially columnar grains. The energy gap of the compound film layer may be varied using different work pressures during a sputtering process. At least one interlayer may be included in the compound film layer to control the size of columnar grains in the compound film layer.

Abstract: An inductor includes: a substrate; an insulator layer; a conductive coil; and a permeability-enhancing film of a multi-layer structure. The multi-layer structure includes at least one repeating unit that has at least two layers. The two layers exhibit an exchange-coupling effect and include a first ferromagnetic layer of a first ferromagnetic material and an exchange-coupling layer.

Abstract: A perpendicular magnetic recording medium includes a substrate, an antiferromagnetic layer disposed above the substrate, and a perpendicular magnetic recording layer formed on the antiferromagnetic layer and exchange-coupled to the antiferromagnetic layer.

Abstract: A perpendicular magnetic recording medium includes: a substrate; a soft magnetic film formed on the substrate; a non-magnetic film including an amorphous interlayer formed on the soft magnetic film and made from a metallic material selected from terbium, gadolinium, dysprosium, tantalum, hafnium, and combinations thereof, a buffer layer formed on the amorphous interlayer and having a face-centered cubic structure, and a seed layer formed on the buffer layer and having a hexagonal crystal structure; and a granular magnetic recording film formed on the seed layer.

Abstract: An inductor includes: a substrate; an insulator layer; a conductive coil; and a permeability-enhancing film of a multi-layer structure. The multi-layer structure includes at least one repeating unit that has at least two layers. The two layers exhibit an exchange-coupling effect and include a first ferromagnetic layer of a first ferromagnetic material and an exchange-coupling layer.

Abstract: An apparatus and methods for a non-volatile magnetic random access memory (MRAM) device that includes a word line, a bit line, and a magnetic thin film memory element located at an intersection of the word and bit lines. The magnetic thin film memory element includes an alloy of a rare earth element and a transition metal element. The word line is operable to heat the magnetic thin film memory element when a heating current is applied. Heating of the magnetic thin film memory element to a predetermined temperature reduces its coercivity, which allows switching of the magnetic state upon application of a magnetic field. The magnetic state of the thin film element can be determined in accordance with principles of the Hall effect.

Abstract: Disclosed herein is a magnetoresistive structure, for example useful as a spin-valve or GMR stack in a magnetic sensor, and a fabrication method thereof. The magnetoresistive structure uses twisted coupling to induce a perpendicular magnetization alignment between the free layer and the pinned layer. Ferromagnetic layers of the free and pinned layers are exchange-coupled using antiferromagnetic layers having substantially parallel exchange-biasing directions. Thus, embodiments can be realized that have antiferromagnetic layers formed of a same material and/or having a same blocking temperature. At least one of the free and pinned layers further includes a second ferromagnetic layer and an insulating layer, such as a NOL, between the two ferromagnetic layers. The insulating layer causes twisted coupling between the two ferromagnetic layers, rotating the magnetization direction of one 90 degrees relative to the magnetization direction of the other.

Abstract: A memory cell structure. A first conductive line is cladded by at least two first ferromagnetic layers respectively having a first easy axis and a second easy axis, a nano oxide layer located between the first ferromagnetic layers, and a first pinned ferromagnetic layer. The first and second easy axes are 90 degree twisted-coupled with the first easy axis parallel to the length of the first conductive line and the second easy axis perpendicular to the length of the first conductive line. A storage device is adjacent to the first conductive line, receiving a magnetic field generated from a current flowing through the first conductive line.

Abstract: An apparatus and methods for a non-volatile magnetic random access memory (MRAM) device that includes a word line, a bit line, and a magnetic thin film memory element located at an intersection of the word and bit lines. The magnetic thin film memory element includes an alloy of a rare earth element and a transition metal element. The word line is operable to heat the magnetic thin film memory element when a heating current is applied. Heating of the magnetic thin film memory element to a predetermined temperature reduces its coercivity, which allows switching of the magnetic state upon application of a magnetic field. The magnetic state of the thin film element can be determined in accordance with principles of the Hall effect.

Abstract: A perpendicular magnetic recording medium includes: a substrate; a soft magnetic film formed on the substrate; a non-magnetic film including an amorphous interlayer formed on the soft magnetic film and made from a metallic material selected from terbium, gadolinium, dysprosium, tantalum, hafnium, and combinations thereof, a buffer layer formed on the amorphous interlayer and having a face-centered cubic structure, and a seed layer formed on the buffer layer and having a hexagonal crystal structure; and a granular magnetic recording film formed on the seed layer.

Abstract: A fabrication method of a magnetoresistance multi-layer is provided. The method includes forming a multi-layer with at least an antiferromagnetic layer and performing an ion irradiation process to the multi-layer to transform a disordered structure of the antiferromagnetic layer to an ordered structure. Accordingly, the process time can be reduced and the interdiffusion in the multi-layer can be prevented.

Abstract: Disclosed herein is a magnetoresistive structure, for example useful as a spin-valve or GMR stack in a magnetic sensor, and a fabrication method thereof. The magnetoresistive structure uses twisted coupling to induce a perpendicular magnetization alignment between the free layer and the pinned layer. Ferromagnetic layers of the free and pinned layers are exchange-coupled using antiferromagnetic layers having substantially parallel exchange-biasing directions. Thus, embodiments can be realized that have antiferromagnetic layers formed of a same material and/or having a same blocking temperature. At least one of the free and pinned layers further includes a second ferromagnetic layer and an insulating layer, such as a NOL, between the two ferromagnetic layers. The insulating layer causes twisted coupling between the two ferromagnetic layers, rotating the magnetization direction of one 90 degrees relative to the magnetization direction of the other.

Abstract: A memory cell structure. A first conductive line is cladded by at least two first ferromagnetic layers respectively having a first easy axis and a second easy axis, a nano oxide layer located between the first ferromagnetic layers, and a first pinned ferromagnetic layer. The first and second easy axes are 90 degree twisted-coupled with the first easy axis parallel to the length of the first conductive line and the second easy axis perpendicular to the length of the first conductive line. A storage device is adjacent to the first conductive line, receiving a magnetic field generated from a current flowing through the first conductive line.

Abstract: A magnetoresistive (MR) device includes a synthetic antiferromagnetic (AFM) layer having an Fe/FeSi/Fe construction. A first Fe layer of the synthetic AFM layer has a magnetization substantially in a first direction, while a second Fe layer of the synthetic AFM layer has a magnetization substantially in a second direction that is substantially antiparallel to the first direction. The magnetoresistive device can be a spin valve in which a first surface of the synthetic AFM layer is adjacent to a pinning layer, and a second surface of the synthetic AFM layer is adjacent to a spacer layer. Further, the spin valve includes a free layer that overlies the spacer, thereby being separated from the synthetic AFM layer by the spacer. The pinning layer, synthetic AFM layer, spacer, and free layer can be bounded by a first shield and a second shield to provide magnetic shielding of the spin valve sensor.