Abstract: A semiconductor memory device includes a substrate having a first active area and a second active area in proximity to the first active area. A trench isolation region is between the first active area and the second active area. A source line region is disposed in the first active area and adjacent to the trench isolation region. An erase gate is disposed on the source line region. A floating gate is disposed on a first side of the erase gate. A first control gate is disposed on the floating gate. A first word line is disposed adjacent to the floating gate and the first control gate and insulated therefrom. A second control gate is disposed on a second side of the erase gate and directly on the trench isolation region. A second word line is disposed adjacent to the second control gate and insulated therefrom.

Abstract: A structure of flash memory cell includes a substrate. A floating gate is disposed on the substrate. A low dielectric constant (low-K) spacer is disposed on a sidewall of the floating gate. A trench isolation structure has a base part disposed in the substrate and a protruding part above the substrate protruding from the base part. The low-K spacer is sandwiched between the floating gate and the protruding part of the trench isolation structure.

Abstract: A semiconductor memory device includes a substrate, an isolation layer, a trench, a semiconductor active structure, and a floating gate electrode. The isolation layer is disposed on the substrate. The trench penetrates through the isolation layer and exposes a part of the substrate. The semiconductor active structure is disposed in the trench, and the floating gate electrode is disposed on the semiconductor active structure. A manufacturing method of the semiconductor memory device includes the following steps. The isolation layer is formed on the substrate. The trench is formed penetrating through the isolation layer and exposing a part of the substrate. The semiconductor active structure is formed in the trench. The floating gate electrode is formed on the semiconductor active structure.

Abstract: A semiconductor memory device includes a substrate having a first active area and a second active area in proximity to the first active area. A trench isolation region is between the first active area and the second active area. A source line region is disposed in the first active area and adjacent to the trench isolation region. An erase gate is disposed on the source line region. A floating gate is disposed on a first side of the erase gate. A first control gate is disposed on the floating gate. A first word line is disposed adjacent to the floating gate and the first control gate and insulated therefrom. A second control gate is disposed on a second side of the erase gate and directly on the trench isolation region. A second word line is disposed adjacent to the second control gate and insulated therefrom.

Abstract: An NVM device includes a semiconductor substrate, a first floating gate, a first control gate, a first drain region, and a common source region. The semiconductor substrate has a recess extending downward from the substrate surface. The first floating gate is disposed in the recess, has a base and a side wall connecting to the base. The first control gate is disposed on and adjacent to the first floating gate. The first drain region is disposed in the semiconductor substrate in the recess. The common source region is formed in the semiconductor substrate in the recess, is adjacent to the first floating gate, and includes a main body and an extension part. The main body is disposed below a bottom surface of the recess and adjacent to the base. The extension part extends upward from the bottom surface beyond the base to be adjacent to the side wall.

Abstract: A structure of flash memory cell includes a substrate. A floating gate is disposed on the substrate. A low dielectric constant (low-K) spacer is disposed on a sidewall of the floating gate. A trench isolation structure has a base part disposed in the substrate and a protruding part above the substrate protruding from the base part. The low-K spacer is sandwiched between the floating gate and the protruding part of the trench isolation structure.

Abstract: A semiconductor memory device includes a substrate having a first active area and a second active area in proximity to the first active area. A trench isolation region is between the first active area and the second active area. A source line region is disposed in the first active area and adjacent to the trench isolation region. An erase gate is disposed on the source line region. A floating gate is disposed on a first side of the erase gate. A first control gate is disposed on the floating gate. A first word line is disposed adjacent to the floating gate and the first control gate and insulated therefrom. A second control gate is disposed on a second side of the erase gate and directly on the trench isolation region. A second word line is disposed adjacent to the second control gate and insulated therefrom.

Abstract: A connector assembly includes a connector and a flat cable. The connector includes a first terminal, a second terminal, a first body, a second body, a metal plate, a third body, and a shell. The first and second terminals electrically connect a first side and a second side of the flat cable respectively and are respectively contained in a first capacity slot and a first through-hole of the first body and in a second capacity slot and a second through-hole of the second body. The first and second bodies clamp the metal plate. The third body partly winds and fixes the first body and the second body, and protects a terminal conductive contact part of the flat cable connected by the first and second terminals to form the connector. The flat cable connects to the connector directly. There is no need for a fixed rigid printed circuit board.

Abstract: A semiconductor memory device includes a substrate, an isolation layer, a trench, a semiconductor active structure, and a floating gate electrode. The isolation layer is disposed on the substrate. The trench penetrates through the isolation layer and exposes a part of the substrate. The semiconductor active structure is disposed in the trench, and the floating gate electrode is disposed on the semiconductor active structure. A manufacturing method of the semiconductor memory device includes the following steps. The isolation layer is formed on the substrate. The trench is formed penetrating through the isolation layer and exposing a part of the substrate. The semiconductor active structure is formed in the trench. The floating gate electrode is formed on the semiconductor active structure.

Abstract: A quantum-dot light emitting diode includes, in sequential order from bottom to top, a LED light source, a quantum-dot photoresist layer and a barrier layer. The quantum-dot photoresist layer has a thickness lower than 20 ?m and is formed by specific material, so as to decrease a step difference between the quantum-dot photoresist layer and a light exit surface of the LED light source, to improve coating property of the barrier material and make sure that the coating of the barrier material can be implemented by dry coating or wet coating; the barrier material is not easy to crack to cause air leakage and oxidation because of thermal expansion and contraction, so as to increase the success rate of side packaging and the reliability of the process, and extend the reliability of the material.

Abstract: A structure of flash memory cell includes a substrate. A floating gate is disposed on the substrate. A low dielectric constant (low-K) spacer is disposed on a sidewall of the floating gate. A trench isolation structure has a base part disposed in the substrate and a protruding part above the substrate protruding from the base part. The low-K spacer is sandwiched between the floating gate and the protruding part of the trench isolation structure.

Abstract: A connector includes a shell configured to protect the connector and to be plugged into a connecting port slot, a plurality of terminals electrically connected to the connecting port slot, a connecting portion connected to an electronic device, a circuit board, and a cover. The circuit board includes a first contact portion electrically connected to the plurality of terminals, and a second contact portion, electrically connected to the connecting portion. The cover is fixed to the shell. The shell is arranged between the circuit board and the shell to fix the circuit board in the shell.

Abstract: A polycarbonate diol is provided, including three kinds of repeating diol units, wherein one of the repeating diol units is chosen from an alkoxylated diol monomer.

Abstract: A needle-free connection device include a casing, a connection base, a slide element and a resilient valve. The casing includes a first hollow tube having a first liquid transmission channel. The connection base is connected to the casing. The resilient valve includes a second hollow tube and a plug connected thereto, wherein the second hollow tube has a second liquid transmission channel, a third liquid transmission channel is formed between the second hollow tube and the plug, and a fourth liquid transmission channel is formed between the connection base and the plug. The first to the fourth liquid transmission channel are intercommunicated with each other. The connection base includes a third hollow tube, and a fourth liquid transmission channel is formed between the plug and the third hollow tube. The needle-free connection device provides a liquid transmission path sequentially passing through the first to the fourth liquid transmission channel.

Abstract: A connector fixing structure is disclosed. The connector fixing structure includes a cable and a connector. The cable includes a plurality of conductors. The connector includes a metal shell, an insulting shell, a plurality of terminals positioned on the insulating shell, and a push-pull device configured to be moved toward the plurality of terminals when the cable is positioned inside the insulating shell such that the plurality of conductors presses the plurality of terminals.

Abstract: A semiconductor structure includes a substrate having a plurality of fin structures thereon, an isolation oxide structure in the substrate between adjacent two of the plurality of fin structures, a gate disposed on the plurality of fin structures, a gate dielectric layer disposed between the plurality of fin structures and the gate, and a source/drain doped region in each of the plurality of fin structures. The isolation oxide structure has a concave, curved top surface.

Abstract: A fixing assembly of a cable connector and a flexible cable is provided. The flexible cable includes a plurality of conductors. The cable connector includes a shell, a plurality of terminals arranged in the shell, and a push-pull device configured to activate the flexible cable to move toward the plurality of terminals so as to conduct the plurality of terminals through the plurality of conductors of the flexible cable.

Abstract: A semiconductor structure includes a substrate having a plurality of fin structures thereon, an isolation oxide structure in the substrate between adjacent two of the plurality of fin structures, a gate disposed on the plurality of fin structures, a gate dielectric layer disposed between the plurality of fin structures and the gate, and a source/drain doped region in each of the plurality of fin structures. The isolation oxide structure has a concave, curved top surface.

Abstract: A fixing assembly of a cable connector and a flexible cable is provided. The flexible cable includes a plurality of conductors. The cable connector includes a shell, a plurality of terminals arranged in the shell, and a push-pull device configured to activate the flexible cable to move toward the plurality of terminals so as to conduct the plurality of terminals through the plurality of conductors of the flexible cable.

Abstract: A detecting apparatus includes a detecting carrier and a detecting device. The detecting carrier can be moved into a charging frame or anyone of storing frames of a stock room. The detecting device is installed in the detecting carrier and includes a power module and a detecting module. The detecting module is configured to detect environment information corresponding in position to the detecting carrier. The power module is configured to supply power for operating the detecting apparatus. When the detecting carrier is arranged in the charging frame, the power module is spaced away from the charging frame and is charged without contacting the charging frame.