Patents by Inventor Chih-Kang Deng
Chih-Kang Deng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8890787Abstract: A liquid crystal display (LCD) apparatus includes: multiple differential amplifier stages each of which is operable to generate, according to a bias current and an input voltage, an output voltage having a magnitude and a slew rate that correspond respectively to the input voltage and a magnitude of the bias current, and serving as a data voltage of a corresponding pixel unit of an LCD panel; multiple current sources controllable to generate and provide a plurality of the bias currents to the differential amplifier stages, respectively; and a bias voltage generating unit connected electrically to the current sources in a current mirror configuration for generating an input bias current and controlling the current sources to generate the bias currents according to a latch pulse signal. The slew rate of the output voltage corresponds to a logic state of the input bias current.Type: GrantFiled: January 11, 2013Date of Patent: November 18, 2014Assignee: ILI Technology CorporationInventors: Chih-Kang Cheng, Sung-Yau Yeh, Chih-Kang Deng
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Patent number: 8749418Abstract: An interpolative digital-to-analog (D/A) converter is adapted to convert a N-bit digital signal into an analog signal, where N is a positive integer greater than 1. The interpolative D/A converter includes a router unit that outputs first and second router voltages based on the first and second bits of the digital signal, and an interpolation unit that receives the first and second router voltages from the router unit, and that performs interpolation operation on the first and second router voltages according to the first bit of the digital signal, so as to generate the analog signal having a voltage magnitude ranging from the first router voltage to the second router voltage.Type: GrantFiled: February 12, 2013Date of Patent: June 10, 2014Assignee: Ili Technology CorporationInventors: Sung-Yau Yeh, Chih-Kang Deng
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Publication number: 20140043178Abstract: An interpolative digital-to-analog (D/A) converter is adapted to convert a N-bit digital signal into an analog signal, where N is a positive integer greater than 1. The interpolative D/A converter includes a router unit that outputs first and second router voltages based on the first and second bits of the digital signal, and an interpolation unit that receives the first and second router voltages from the router unit, and that performs interpolation operation on the first and second router voltages according to the first bit of the digital signal, so as to generate the analog signal having a voltage magnitude ranging from the first router voltage to the second router voltage.Type: ApplicationFiled: February 12, 2013Publication date: February 13, 2014Applicant: ILI TECHNOLOGY CORPORATIONInventors: Sung-Yau YEH, Chih-Kang DENG
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Patent number: 7738223Abstract: An active device array substrate includes pixel units, scan lines, data lines, electrostatic discharge (ESD) protection elements, a short ring and an ESD biased generator. Each pixel unit is electrically connected to the corresponding scan line and data line. Each ESD protection element has a first connection terminal, a second connection terminal and a third connection terminal, wherein the first connection terminal is electrically connected to one of the corresponding scan line and data line, the second connection terminal is electrically connected to the short ring, and the third connection terminal is electrically connected to the ESD biased generator. As an ESD stress occurs, the ESD biased generator provides a voltage to the ESD protection elements to turn on them. It causes that the accumulated electrostatic charges are conducted into the lowest potential of the substrate through the short rings, so as to prevent the pixel units from ESD damaging.Type: GrantFiled: August 21, 2007Date of Patent: June 15, 2010Assignee: Chunghwa Picture Tubes, Ltd.Inventors: Ming-Dou Ker, Chih-Kang Deng
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Patent number: 7632725Abstract: An ESD protection device with thicker polysilicon film, an electronic apparatus having the same, and a method for manufacturing the same are provided. The ESD protection device can be a diode or a MOS transistor with a thicker polysilicon film employed in an ESD protection circuit to protect an electronic apparatus. The electronic apparatus includes a substrate having a device area and an ESD protection circuit area. A first polysilicon film of a first thickness is formed on the device area of the substrate, so as to form an electronic device. A second polysilicon film of a second thickness is formed on the ESD protection circuit area, so as to form an ESD protection device. The second thickness, which is preferably about in the range of 100 to 500 nanometers, is thicker than the first thickness.Type: GrantFiled: June 13, 2006Date of Patent: December 15, 2009Assignee: TPO Displays Corp.Inventors: Ming-Dou Ker, Chih-Kang Deng, Tang-Kui Tseng, An Shih, Sheng-Chieh Yang
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Patent number: 7626647Abstract: An electrostatic discharge protection device, an electrostatic discharge protection structure, and a manufacturing process of the device are provided. The electrostatic discharge protection device includes at least four doping regions, wherein two adjacent regions are of different types. The electrostatic discharge protection structure includes an electrostatic discharge bus, a plurality of first electrostatic discharge protection devices connecting to the gates of the display transistors and the electrostatic discharge bus, a plurality of second electrostatic discharge protection devices connecting to the source/drain of the transistors and the electrostatic discharge bus, and a plurality of third electrostatic discharge protection devices connecting to the input/output terminals of the drive circuit of the display and the electrostatic discharge bus.Type: GrantFiled: August 21, 2007Date of Patent: December 1, 2009Assignee: AU Optronics Corp.Inventors: Ming-Dou Ker, Chih-Kang Deng, Wein-Town Sun
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Publication number: 20080106835Abstract: An active device array substrate includes pixel units, scan lines, data lines, electrostatic discharge (ESD) protection elements, a short ring and an ESD biased generator. Each pixel unit is electrically connected to the corresponding scan line and data line. Each ESD protection element has a first connection terminal, a second connection terminal and a third connection terminal, wherein the first connection terminal is electrically connected to one of the corresponding scan line and data line, the second connection terminal is electrically connected to the short ring, and the third connection terminal is electrically connected to the ESD biased generator. As an ESD stress occurs, the ESD biased generator provides a voltage to the ESD protection elements to turn on them. It causes that the accumulated electrostatic charges are conducted into the lowest potential of the substrate through the short rings, so as to prevent the pixel units from ESD damaging.Type: ApplicationFiled: August 21, 2007Publication date: May 8, 2008Applicant: CHUNGHWA PICTURE TUBES, LTD.Inventors: Ming-Dou Ker, Chih-Kang Deng
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Publication number: 20080094533Abstract: An electrostatic discharge protection device, an electrostatic discharge protection structure, and a manufacturing process of the device are provided. The electrostatic discharge protection device includes at least four doping regions, wherein two adjacent regions are of different types. The electrostatic discharge protection structure includes an electrostatic discharge bus, a plurality of first electrostatic discharge protection devices connecting to the gates of the display transistors and the electrostatic discharge bus, a plurality of second electrostatic discharge protection devices connecting to the source/drain of the transistors and the electrostatic discharge bus, and a plurality of third electrostatic discharge protection devices connecting to the input/output terminals of the drive circuit of the display and the electrostatic discharge bus.Type: ApplicationFiled: August 21, 2007Publication date: April 24, 2008Applicant: AU Optronics CorporationInventors: Ming-Dou Ker, Chih-Kang Deng, Wein-Town Sun
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Publication number: 20060231896Abstract: An ESD protection device with thicker polysilicon film, an electronic apparatus having the same, and a method for manufacturing the same are provided. The ESD protection device can be a diode or a MOS transistor with a thicker polysilicon film employed in an ESD protection circuit to protect an electronic apparatus. The electronic apparatus includes a substrate having a device area and an ESD protection circuit area. A first polysilicon film of a first thickness is formed on the device area of the substrate, so as to form an electronic device. A second polysilicon film of a second thickness is formed on the ESD protection circuit area, so as to form an ESD protection device. The second thickness, which is preferably about in the range of 100 to 500 nanometers, is thicker than the first thickness.Type: ApplicationFiled: June 13, 2006Publication date: October 19, 2006Inventors: Ming-Dou Ker, Chih-Kang Deng, Tang-Kui Tseng, An Shih, Sheng-Chieh Yang
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Patent number: 7064418Abstract: A method and a structure of a diode are provided. The diode is used in an electrostatic discharge protection circuit using TFT (Thin Film Transistor) fabrication technology. A semiconductor layer is formed on a substrate. A first region of a first carrier concentration is formed in the semiconductor layer. A second region of a second carrier concentration is formed in the semiconductor layer. An insulator is formed on the semiconductor layer. The insulator layer is etched to form at least a contact window. The contact window exposes a portion of an upper surface of the semiconductor layer. A metal layer is formed on the insulator layer. The metal layer fills up the contact window to contact the semiconductor layer.Type: GrantFiled: February 20, 2004Date of Patent: June 20, 2006Assignee: Toppoly Optoelectronics Corp.Inventors: Ying-Hsin Li, Sheng-Chieh Yang, An Shih, Ming-Dou Ker, Tang-Kui Tseng, Chih-Kang Deng
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Publication number: 20040245574Abstract: An ESD protection device with thicker polysilicon film, an electronic apparatus having the same, and a method for manufacturing the same are provided. The ESD protection device can be a diode or a MOS transistor with a thicker polysilicon film employed in an ESD protection circuit to protect an electronic apparatus. The electronic apparatus includes a substrate having a device area and an ESD protection circuit area. A first polysilicon film of a first thickness is formed on the device area of the substrate, so as to form an electronic device. A second polysilicon film of a second thickness is formed on the ESD protection circuit area, so as to form an ESD protection device. The second thickness, which is preferably about in the range of 100 to 500 nanometers, is thicker than the first thickness.Type: ApplicationFiled: April 23, 2004Publication date: December 9, 2004Inventors: Ming-Dou Ker, Chih-Kang Deng, Tang-Kui Tseng, An Shih, Sheng-Chieh Yang
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Publication number: 20040164381Abstract: A method and a structure of a diode are provided. The diode is used in an electrostatic discharge protection circuit using TFT (Thin Film Transistor) fabrication technology. A semiconductor layer is formed on a substrate. A first region of a first carrier concentration is formed in the semiconductor layer. A second region of a second carrier concentration is formed in the semiconductor layer. An insulator is formed on the semiconductor layer. The insulator layer is etched to form at least a contact window. The contact window exposes a portion of an upper surface of the semiconductor layer. A metal layer is formed on the insulator layer. The metal layer fills up the contact window to contact the semiconductor layer.Type: ApplicationFiled: February 20, 2004Publication date: August 26, 2004Inventors: Ying-Hsin Li, Sheng-Chieh Yang, An Shih, Ming-Dou Ker, Tang-Kui Tseng, Chih-Kang Deng