Patents by Inventor Chih-Wei Liao

Chih-Wei Liao has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210327945
    Abstract: A device is disclosed. The device includes a plurality of pixels disposed over a first surface of a semiconductor layer. The device includes a device layer disposed over the first surface. The device includes metallization layers disposed over the device layer. One of the metallization layers, closer to the first surface than any of other ones of the metallization layers, includes at least one conductive structure. The device includes an oxide layer disposed over a second surface of the semiconductor layer, the second surface being opposite to the first surface, the oxide layer also lining a recess that extends through the semiconductor layer. The device includes a spacer layer disposed between inner sidewalls of the recess and the oxide layer. The device includes a pad structure extending through the oxide layer and the device layer to be in physical contact with the at least one conductive structure.
    Type: Application
    Filed: April 17, 2020
    Publication date: October 21, 2021
    Applicant: Taiwan Semiconductor Manufacturing Company Limited
    Inventors: Keng-Ying Liao, Huai-jen Tung, Chih Wei Sung, Po-zen Chen, Yu-chien Ku, Yu-Chu Lin, Chi-Chung Jen, Yen-Jou Wu, S.S. Wang
  • Publication number: 20210327951
    Abstract: A method includes forming a dielectric layer over a first surface of a semiconductor layer, the dielectric layer including a metallization layer. The method includes forming an opening to expose a portion of the dielectric layer. The method includes forming a buffer oxide layer lining the opening. The method includes forming, according to a patternable layer, a recess in the buffer oxide layer partially extending from a second surface of the buffer oxide layer. The method includes removing the patternable layer. The method includes extending the recess through the buffer oxide layer and a portion of the dielectric layer to expose a portion of the metallization layer. The method includes filling the recess with a conductive material to form a pad structure configured to provide electrical connection to the metallization layer.
    Type: Application
    Filed: April 17, 2020
    Publication date: October 21, 2021
    Applicant: Taiwan Semiconductor Manufacturing Company Limited
    Inventors: Keng-Ying Liao, Huai-Jen Tung, Chih Wei Sung, Po-Zen Chen, Yu-Chien Ku, Yu-Chu Lin, Chi-Chung Jen, Yen-Jou Wu, Tsun-Kai Tsao, Y.L. Yang
  • Patent number: 11145751
    Abstract: A semiconductor structure and a method for forming the same are provided. The semiconductor structure includes a gate structure, a source/drain structure, a dielectric layer, a contact plug. The gate structure is positioned over a fin structure. The source/drain structure is positioned in the fin structure and adjacent to the gate structure. The dielectric layer is positioned over the gate structure and the source/drain structure. The contact plug is positioned passing through the dielectric layer. The contact plug includes a first metal compound including one of group III elements, group IV elements, group V elements or a combination thereof.
    Type: Grant
    Filed: March 29, 2018
    Date of Patent: October 12, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Kuo-Ju Chen, Su-Hao Liu, Chun-Hao Kung, Liang-Yin Chen, Huicheng Chang, Kei-Wei Chen, Hui-Chi Huang, Kao-Feng Liao, Chih-Hung Chen, Jie-Huang Huang, Lun-Kuang Tan, Wei-Ming You
  • Publication number: 20210313190
    Abstract: Methods of manufacturing a chemical-mechanical polishing (CMP) slurry and methods of performing CMP process on a substrate comprising metal features are described herein. The CMP slurry may be manufactured using a balanced concentration ratio of chelator additives to inhibitor additives, the ratio being determined based on an electro potential (Ev) value of a metal material of the substrate. The CMP process may be performed on the substrate based on the balanced concentration ratio of chelator additives to inhibitor additives of the CMP slurry.
    Type: Application
    Filed: June 21, 2021
    Publication date: October 7, 2021
    Inventors: Chun-Hao Kung, Tung-Kai Chen, Chih-Chieh Chang, Kao-Feng Liao, Hui-Chi Huang, Kei-Wei Chen
  • Publication number: 20210305258
    Abstract: A transistor includes a gate structure that has a first gate dielectric layer and a second gate dielectric layer. The first gate dielectric layer is disposed over the substrate. The first gate dielectric layer contains a first type of dielectric material that has a first dielectric constant. The second gate dielectric layer is disposed over the first gate dielectric layer. The second gate dielectric layer contains a second type of dielectric material that has a second dielectric constant. The second dielectric constant is greater than the first dielectric constant. The first dielectric constant and the second dielectric constant are each greater than a dielectric constant of silicon oxide.
    Type: Application
    Filed: September 29, 2020
    Publication date: September 30, 2021
    Inventors: Chih-Yu Hsu, Jian-Hao Chen, Chia-Wei Chen, Shan-Mei Liao, Hui-Chi Chen, Yu-Chia Liang, Shih-Hao Lin, Kuei-Lun Lin, Kuo-Feng Yu, Feng-Cheng Yang, Yen-Ming Chen
  • Publication number: 20210296576
    Abstract: A method for fabricating semiconductor device includes the steps of: forming a first magnetic tunneling junction (MTJ) and a second MTJ on a substrate; forming a first top electrode on the first MTJ and a second top electrode on the second MTJ; forming a passivation layer on the first MTJ and the second MTJ; removing part of the passivation layer so that a top surface of all of the remaining passivation layer is lower than a top surface of the first electrode; and forming a ultra low-k (ULK) dielectric layer on the first MTJ and the second MTJ.
    Type: Application
    Filed: June 1, 2021
    Publication date: September 23, 2021
    Inventors: Chih-Wei Kuo, Tai-Cheng Hou, Yu-Tsung Lai, Jiunn-Hsiung Liao
  • Publication number: 20210288107
    Abstract: A semiconductor device includes a first magnetic tunneling junction (MTJ) and a second MTJ on a substrate, a first top electrode on the first MTJ and a second top electrode on the second MTJ, a passivation layer between the first MTJ and the second MTJ, and an ultra low-k (ULK) dielectric layer on and directly contacting the passivation layer and around the first MTJ and the second MTJ. Preferably, a top surface of the passivation layer includes a V-shape and a valley point of the V-shape is higher than a bottom surface of the first top electrode.
    Type: Application
    Filed: June 1, 2021
    Publication date: September 16, 2021
    Inventors: Chih-Wei Kuo, Tai-Cheng Hou, Yu-Tsung Lai, Jiunn-Hsiung Liao
  • Patent number: 11121307
    Abstract: A method for fabricating semiconductor device includes the steps of: forming a first magnetic tunneling junction (MTJ) and a second MTJ on a substrate; forming a first top electrode on the first MTJ and a second top electrode on the second MTJ; forming a cap layer on the first MTJ and the second MTJ; forming a passivation layer on the cap layer; removing part of the passivation layer to form a recess between the first MTJ and the second MTJ; forming an anti-reflective layer on the passivation layer and filling the recess; and removing the anti-reflective layer, the passivation layer, and the cap layer to form a first contact hole.
    Type: Grant
    Filed: September 19, 2019
    Date of Patent: September 14, 2021
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Chih-Wei Kuo, Chia-Chang Hsu, Yu-Tsung Lai, Jiunn-Hsiung Liao
  • Publication number: 20210278623
    Abstract: An optical element drive mechanism is provided. The optical element drive mechanism includes an immovable part, a movable part, and a drive assembly. The movable part is movable relative to the immovable part. The movable part holds an optical element with an optical axis. The drive assembly drives the movable part to move relative to the immovable part. At least part of the drive assembly is disposed on the immovable part.
    Type: Application
    Filed: November 10, 2020
    Publication date: September 9, 2021
    Inventors: Shang-Yu HSU, Meng-Ting LIN, Shih-Wei HUNG, Yu-Huai LIAO, Chia-Che WU, Mao-Gen JIAN, Chih-Wei WENG
  • Patent number: 11106000
    Abstract: A driving mechanism for supporting an optical member is provided, including a base, a frame, a movable portion, a driving module, and an adhesive member. The base includes a plurality of first sidewalls, and at least one recess is formed on the first sidewalls. The frame includes a plurality of second sidewalls, and at least one opening is formed on the second sidewalls. The base and the frame form a hollow box, and the opening corresponds to the recess. The movable portion and the driving module are disposed in the hollow box. The driving module can drive the movable portion to move relative to the base. The adhesive member is accommodated in the opening and the recess, and extended along the first sidewalls. The adhesive member is disposed between the first sidewalls and the second sidewalls.
    Type: Grant
    Filed: May 17, 2018
    Date of Patent: August 31, 2021
    Assignee: TDK TAIWAN CORP.
    Inventors: Chao-Chang Hu, Bing-Ru Song, Yi-Ho Chen, Chia-Pin Hsu, Chih-Wei Weng, Shin-Hua Chen, Chien-Lun Huang, Chao-Chun Chang, Shou-Jen Liu, Kun-Shih Lin, Nai-Wen Hsu, Yu-Cheng Lin, Shang-Yu Hsu, Yu-Huai Liao, Yi-Hsin Nieh, Shih-Ting Huang, Kuo-Chun Kao, Fu-Yuan Wu
  • Publication number: 20210223821
    Abstract: An electronic device assembly is provided, including an electronic device body and a detachable lens module. The electronic device body has a housing and a first joining unit, wherein the first joining unit is disposed on the housing. The detachable lens module is detachably assembled onto the housing and has a second joining unit, wherein the first joining unit is joined to the second joining unit to electrically connect the detachable lens module to the electronic device body.
    Type: Application
    Filed: June 19, 2020
    Publication date: July 22, 2021
    Applicant: Acer Incorporated
    Inventors: Yu-Shih Wang, Yi-Ta Huang, Chih-Chun Liu, Cheng-Nan Ling, Wen-Chieh Tai, Chi-Hung Lai, Wu-Chen Lee, Pin-Chueh Lin, Chih-Wei Liao, Ting-Wen Pai, Wen-Chieh Chen
  • Patent number: 11008456
    Abstract: A resin composition comprising the following constituents: (A) a polyphenylene ether resin with unsaturated end groups; (B) a constituent with a maleimide structure; (C) a first initiator, which has a first one-minute half-life temperature; and (D) a second initiator, which has a second one-minute half-life temperature, wherein the first one-minute half-life temperature is 20° C. to 50° C. higher than the second one-minute half-life temperature, and the first one-minute half-life temperature is 170° C. to 220° C.
    Type: Grant
    Filed: June 20, 2019
    Date of Patent: May 18, 2021
    Assignee: TAIWAN UNION TECHNOLOGY CORPORATION
    Inventors: Chih-Wei Liao, Guan-Syun Tseng, Chen-Hua Yu
  • Patent number: 11001759
    Abstract: A resin composition is provided. The resin composition comprises the following constituents: (A) an epoxy resin, which has at least two epoxy functional groups per molecule; (B) a reactive flame retardant with (a DOPO functional group) in structure; and (C) a non-reactive phosphorus-containing flame retardant, which is compatible with the other constituents of the resin composition.
    Type: Grant
    Filed: June 15, 2018
    Date of Patent: May 11, 2021
    Assignee: TAIWAN UNION TECHNOLOGY CORPORATION
    Inventors: Chih-Wei Liao, Chang-Chien Yang, Tsung-Hsien Lin, Ju-Ming Huang
  • Patent number: 10994516
    Abstract: A resin composition is provided. The resin composition comprises the following components: (A) epoxy resin; (B) a cross-linking agent; (C) bismaleimide resin (BMI) represented by the following formula (I): wherein R1 is an organic group; and (D) a resin represented by the following formula (II): wherein n is an integer of 1 to 10.
    Type: Grant
    Filed: January 2, 2018
    Date of Patent: May 4, 2021
    Assignee: TAIWAN UNION TECHNOLOGY CORPORATION
    Inventors: Chih-Wei Liao, Hsien-Te Chen, Tsung-Hsien Lin, Ju-Ming Huang
  • Patent number: 10989396
    Abstract: An illumination device includes a supporting base, and a light-emitting element inserted in the supporting base. The light-emitting element includes a substrate having a supporting surface and a side surface, a light-emitting chip disposed on the supporting surface, and a first wavelength conversion layer covering the light-emitting chip and only a portion of the supporting surface without covering the side surface.
    Type: Grant
    Filed: May 18, 2020
    Date of Patent: April 27, 2021
    Assignee: EPISTAR CORPORATION
    Inventors: Chih-Ping Ho, Chih-Wei Liao, Shyi-Ming Pan
  • Patent number: 10920008
    Abstract: A thermal-curable resin composition is provided. The thermal-curable resin composition comprises: (A) a thermal-curable resin component, which comprises: (a1) bismaleimide resin; (a2) cyanate ester resin; and (a3) epoxy resin, wherein the cyanate ester resin (a2) and the epoxy resin (a3) are respectively in an amount ranging from 50 parts by weight to 150 parts by weight and from 24 parts by weight to 51 parts by weight per 100 parts by weight of the bismaleimide resin (a1); and (B) a filler, wherein the filler (B) is in an amount ranging from 40 parts by weight to 55 parts by weight per 100 parts by weight of the dry weight of the resin composition; and wherein the resin composition has a dynamic viscosity of not higher than 800 Pa·s after being brought into a semi-cured state (B-stage), and the resin composition has a dissipation factor (Df) of not higher than 0.006 at 10 GHz after being cured completely.
    Type: Grant
    Filed: January 17, 2019
    Date of Patent: February 16, 2021
    Assignee: TAIWAN UNION TECHNOLOGY CORPORATION
    Inventors: Ju-Ming Huang, Chen-Hua Yu, Chang-Chien Yang, Guan-Syun Tseng, Chih-Wei Liao
  • Publication number: 20200291228
    Abstract: A resin composition comprising the following constituents: (A) a polyphenylene ether resin with unsaturated end groups; (B) a constituent with a maleimide structure; (C) a first initiator, which has a first one-minute half-life temperature; and (D) a second initiator, which has a second one-minute half-life temperature, wherein the first one-minute half-life temperature is 20° C. to 50° C. higher than the second one-minute half-life temperature, and the first one-minute half-life temperature is 170° C. to 220° C.
    Type: Application
    Filed: June 20, 2019
    Publication date: September 17, 2020
    Inventors: Chih-Wei LIAO, Guan-Syun TSENG, Chen-Hua YU
  • Publication number: 20200284410
    Abstract: An illumination device includes a supporting base, and a light-emitting element inserted in the supporting base. The light-emitting element includes a substrate having a supporting surface and a side surface, a light-emitting chip disposed on the supporting surface, and a first wavelength conversion layer covering the light-emitting chip and only a portion of the supporting surface without covering the side surface.
    Type: Application
    Filed: May 18, 2020
    Publication date: September 10, 2020
    Inventors: Chih-Ping HO, Chih-Wei LIAO, Shyi-Ming PAN
  • Patent number: 10763573
    Abstract: An antenna structure includes a side frame, a first feed portion, a second feed portion, and a first ground portion. The side frame defines a first gap and a second gap. The side frame is divided into a first radiating portion by the first gap and the second gap. When the first feed portion supplies current, the current flows through a first resonance section and is grounded through the first ground portion to activate a first operating mode and a second operating mode. When the first feed portion supplies current, the current flows through a second resonance section and is grounded through the second feed portion to activate a third operating mode. When the second feed portion supplies current, the current flows through the second resonance section and the first resonance section, and is grounded through the first ground portion to activate a fourth operating mode.
    Type: Grant
    Filed: January 30, 2019
    Date of Patent: September 1, 2020
    Assignee: Chiun Mai Communication Systems, Inc.
    Inventors: Chih-Wei Liao, Cheng-An Chen, Jin-Bo Chen
  • Patent number: 10763571
    Abstract: An antenna structure includes a housing and a feeding source. The housing forms a radiating portion, a first coupling portion, and a second coupling portion. The first coupling portion and the second coupling portion are grounded. The feeding source is electrically connected to the radiating portion for feeding current to the radiating portion and divides the radiating portion into a first radiating section and a second radiating section. When the feeding source supplies current, the current flows through the first radiating section and is coupled to the first coupling portion to activate a first operation mode and a second operation mode. When the feeding source supplies current, the current flows through the second radiating section and is coupled to the second coupling portion to activate a third operation mode and a fourth operation mode.
    Type: Grant
    Filed: July 31, 2018
    Date of Patent: September 1, 2020
    Assignee: Chiun Mai Communication Systems, Inc.
    Inventors: Jin-Bo Chen, Cheng-An Chen, Chih-Wei Liao