Patents by Inventor Ching-Fuh Lin

Ching-Fuh Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10734539
    Abstract: A photodetector is provided with a metal-semiconductor junction for measuring infrared radiation. In another embodiment, the photodetector includes structures to achieve localized surface plasmon resonance at the metal-semiconductor junction stimulated by incident light. The photodetector hence has prompted response and broadband spectra region for photon detection. The photodetector can be used for detecting varied powers of incident light with wavelength from visible to mid-infrared region (300 nm˜20 ?m).
    Type: Grant
    Filed: March 6, 2019
    Date of Patent: August 4, 2020
    Assignee: National Taiwan University
    Inventors: Ching-Fuh Lin, Hung-Chieh Chuang, Meng-Jie Lin, Po-Jui Huang
  • Patent number: 10642263
    Abstract: A control system for an unmanned aerial vehicle is disclosed. The control system includes a mobile device and an intermediary device. The mobile device is equipped with an APP allowing a user to input a control order. The intermediary device has a microprocessor for receiving the control order and generating an execution signal in accordance with the control order, and the execution signal is transmitted to the unmanned aerial vehicle. When the intermediary device does not receive any control order, the microprocessor automatically generates a hover signal for maintaining the unmanned aerial vehicle in a hovering flight state.
    Type: Grant
    Filed: December 19, 2017
    Date of Patent: May 5, 2020
    Assignee: National Taiwan University
    Inventors: Ching-Fuh Lin, Ta-Jung Lin
  • Publication number: 20190348564
    Abstract: A photodetector is provided with a metal-semiconductor junction for measuring infrared radiation. In another embodiment, the photodetector includes structures to achieve localized surface plasmon resonance at the metal-semiconductor junction stimulated by incident light. The photodetector hence has prompted response and broadband spectra region for photon detection. The photodetector can be used for detecting varied powers of incident light with wavelength from visible to mid-infrared region (300 nm˜20 ?m).
    Type: Application
    Filed: March 6, 2019
    Publication date: November 14, 2019
    Inventors: Ching-Fuh Lin, Hung-Chieh Chuang, Meng-Jie Lin, Po-Jui Huang
  • Patent number: 10392110
    Abstract: A solar cell module for an unmanned aerial vehicle is disclosed. The solar cell module includes a carrier base and a solar cell unit. The carrier base is disposed on the unmanned aerial vehicle. The solar cell unit has a plurality of solar cells attached to the carrier body. A ratio of the power provided by the solar cell unit to the weight of the solar cell module is equal to or greater than 0.1 (W/g).
    Type: Grant
    Filed: November 28, 2017
    Date of Patent: August 27, 2019
    Assignee: National Taiwan University
    Inventors: Ching-Fuh Lin, Ta-Jung Lin
  • Publication number: 20190243135
    Abstract: A light-emitting thin film is provided with one or more light-emitting materials and a host. Each light-emitting material is capable of absorbing photons or electromagnetic waves and re-radiating photons or electromagnetic waves after the absorption. The host is used to eliminate grain boundaries and mitigate scattering of the light-emitting materials after the film is formed. Preferably the light-emitting thin film is made of a solution process. A head-up display using the light-emitting thin film is also disclosed.
    Type: Application
    Filed: December 24, 2018
    Publication date: August 8, 2019
    Inventors: Ching-Fuh Lin, Tsung-Yo Tsai, Chun-Yu Lin
  • Publication number: 20190161187
    Abstract: A small unmanned aircraft is disclosed. By delicate design and limitation of the specification, the small unmanned aircraft is enabled to fly by solar energy produced from a solar cell module. Preferably the small unmanned aircraft has a dimension less than 60 cm×60 cm.
    Type: Application
    Filed: October 22, 2018
    Publication date: May 30, 2019
    Inventor: Ching-Fuh Lin
  • Patent number: 10205043
    Abstract: The present invention provides a hot-carrier photoelectric conversion method. The method includes a hot-carrier photoelectric conversion device having a P-type semiconductor layer, an N-type semiconductor layer, and an inorganic conducting light-absorbing layer. The inorganic conducting light-absorbing layer is formed between the P-type semiconductor layer and the N-type semiconductor layer, and an electric field is formed between the P-type semiconductor layer and the N-type semiconductor layer. Moreover, photons are absorbed by the inorganic conducting light-absorbing layer to create electrons and holes. The electrons and holes are respectively shifted by the electric field or diffusion effect to the N-type semiconductor layer and the P-type semiconductor layer, so that the electrons and the holes are respectively conducted outside to create electric energy.
    Type: Grant
    Filed: October 13, 2017
    Date of Patent: February 12, 2019
    Assignee: National Taiwan University
    Inventors: Ching-Fuh Lin, Hong-Jhang Syu
  • Publication number: 20180210441
    Abstract: A control system for an unmanned aerial vehicle is disclosed. The control system includes a mobile device and an intermediary device. The mobile device is equipped with an APP allowing a user to input a control order. The intermediary device has a microprocessor for receiving the control order and generating an execution signal in accordance with the control order, and the execution signal is transmitted to the unmanned aerial vehicle. When the intermediary device does not receive any control order, the microprocessor automatically generates a hover signal for maintaining the unmanned aerial vehicle in a hovering flight state.
    Type: Application
    Filed: December 19, 2017
    Publication date: July 26, 2018
    Inventors: Ching-Fuh Lin, Ta-Jung Lin
  • Publication number: 20180208308
    Abstract: A solar cell module for an unmanned aerial vehicle is disclosed. The solar cell module includes a carrier base and a solar cell unit. The carrier base is disposed on the unmanned aerial vehicle. The solar cell unit has a plurality of solar cells attached to the carrier body. A ratio of the power provided by the solar cell unit to the weight of the solar cell module is equal to or greater than 0.1 (W/g).
    Type: Application
    Filed: November 28, 2017
    Publication date: July 26, 2018
    Inventors: Ching-Fuh Lin, Ta-Jung Lin
  • Publication number: 20180040758
    Abstract: The present invention provides a hot-carrier photoelectric conversion method. The method includes a hot-carrier photoelectric conversion device having a P-type semiconductor layer, an N-type semiconductor layer, and an inorganic conducting light-absorbing layer. The inorganic conducting light-absorbing layer is formed between the P-type semiconductor layer and the N-type semiconductor layer, and an electric field is formed between the P-type semiconductor layer and the N-type semiconductor layer. Moreover, photons are absorbed by the inorganic conducting light-absorbing layer to create electrons and holes. The electrons and holes are respectively shifted by the electric field or diffusion effect to the N-type semiconductor layer and the P-type semiconductor layer, so that the electrons and the holes are respectively conducted outside to create electric energy.
    Type: Application
    Filed: October 13, 2017
    Publication date: February 8, 2018
    Inventors: Ching-Fuh Lin, Hong-Jhang Syu
  • Patent number: 9818900
    Abstract: The present invention provides a hot-carrier photoelectric conversion method. The method includes a hot-carrier photoelectric conversion device having a P-type semiconductor layer, an N-type semiconductor layer, and an inorganic conducting light-absorbing layer. The inorganic conducting light-absorbing layer is formed between the P-type semiconductor layer and the N-type semiconductor layer, and an electric field is formed between the P-type semiconductor layer and the N-type semiconductor layer. Moreover, photons are absorbed by the inorganic conducting light-absorbing layer to create electrons and holes. The electrons and holes are respectively shifted by the electric field or diffusion effect to the N-type semiconductor layer and the P-type semiconductor layer, so that the electrons and the holes are respectively conducted outside to create electric energy.
    Type: Grant
    Filed: February 19, 2014
    Date of Patent: November 14, 2017
    Assignee: National Taiwan University
    Inventors: Ching-Fuh Lin, Hsin-Yi Chen, Jiun-Jie Chao, Hong-Jhang Syu
  • Publication number: 20160230087
    Abstract: The present invention relates to a method for fabricating a phosphor having a maximum absorption wavelength between 410 nm and 470 nm and having no rare earth elements therein and a method for generating a white light by using the phosphor having a maximum absorption wavelength between 410 nm and 470 nm and having no rare earth elements therein, and particularly relates to a method for fabricating manganese-doped zinc selenide nanoparticles, which can emit a yellow-orange light having a wavelength of 500 nm-700 nm, and a method for generating a white light by using the manganese-doped zinc selenide nanoparticles, which can emit a yellow-orange light having a wavelength of 500 nm-700 nm.
    Type: Application
    Filed: May 19, 2015
    Publication date: August 11, 2016
    Inventors: CHING-FUH LIN, Pin-Chun SHEN, CHIEH-NAN TSENG, KUAN-YU CHEN, JHIH-SIANG YANG
  • Publication number: 20150255308
    Abstract: An embodiment discloses a method for modulating stress of a semiconductor film and comprises the steps of: providing a substrate; forming a semiconductor film on the substrate; performing an annealing treatment to the formed semiconductor film; and determining a residual stress of the semiconductor film at a certain compress strain, a certain tensile strain, or zero by controlling a temperature of the annealing treatment.
    Type: Application
    Filed: June 25, 2014
    Publication date: September 10, 2015
    Applicant: NATIONAL TAIWAN UNIVERSITY
    Inventors: CHING-FUH LIN, Yu-Wen CHENG, Yu-Zhong LIN
  • Publication number: 20150075426
    Abstract: The present invention relates to a pulsed laser deposition system, and particularly relates to a pulsed laser deposition system capable of using several different targets. In the pulsed laser deposition system, a beam-splitting device is provided to split a UV laser beam into several UV laser beams and to introduce these UV laser beams to different targets simultaneously. Therefore, the pulsed laser deposition system can use several different targets and can be used to form doped epitaxial layer (III-V semiconductor film) and ternary or quaternary epitaxial layer (III-V semiconductor film).
    Type: Application
    Filed: January 17, 2014
    Publication date: March 19, 2015
    Applicant: National Taiwan University
    Inventors: CHING-FUH LIN, Yu-Wen CHENG, Hao-Yu WU
  • Patent number: 8956911
    Abstract: The present invention relates to a LED (light-emitting diode) phosphor and fabricating method thereof, and particularly relates to a LED phosphor having a light-emitting thin film (or photoluminescence thin film) made of an organic material and a zinc oxide microstructure (or nanostructure) and a method for fabricating the LED phosphor by hydrothermal method and combination of the organic material and the zinc oxide microstructure (or nanostructure). In this invention, the light-emitting thin film (or photoluminescence thin film) made of the organic material and the zinc oxide microstructure (or nanostructure) is applied instead of rare earth elements to fabricate the LED phosphor. Therefore, the cost of the LED phosphor and the white LED can be reduced and the processes for fabricating the LED phosphor and the white LED can be simplified.
    Type: Grant
    Filed: December 27, 2012
    Date of Patent: February 17, 2015
    Assignee: National Taiwan University
    Inventors: Ching-Fuh Lin, Ming-Shiun Lin
  • Patent number: 8951922
    Abstract: The present invention relates to a method for fabricating an interlayer, and particularly relates to a method for fabricating an interlayer PCBM which is difficult to be dissolved in organic solvents. The solubility of the interlayer (PCBM) in organic solvents is decreased by polymerization of the interlayer (PCBM). Therefore, the thickness of the interlayer (PCBM) can be efficiently controlled, and the yield rate and efficiency of photoelectric devices can be improved.
    Type: Grant
    Filed: March 13, 2013
    Date of Patent: February 10, 2015
    Assignee: National Taiwan University
    Inventors: Ching-Fuh Lin, Kuei-Yu Cian, Shao-Hsuan Kao
  • Publication number: 20150036316
    Abstract: The present invention relates to a white light-emitting diode with high uniformity and wide angle intensity distribution, and particularly relates to a color temperature tunable white light-emitting diode with high uniformity and wide angle intensity distribution. A nano-phosphor material is coated on one surface of a lampshade of the white light-emitting diode to form a white light phosphor layer for providing a stable white light with high uniformity, wide angle intensity distribution, and good illuminance. Furthermore, the color temperature of the white light-emitting diode can be adjusted by changing the ratio of compositions of white light phosphor layer.
    Type: Application
    Filed: October 19, 2013
    Publication date: February 5, 2015
    Applicant: National Taiwan University
    Inventors: CHING-FUH LIN, Pin-Chun SHEN
  • Publication number: 20140368625
    Abstract: A three-dimensional (3D) image display device and a method thereof are provided. A first light filtering unit obtains a first RGB color light filtered from a first image, and a second light filtering unit obtains a second RGB color light filtered from a second image, to produce a left-eye image and a right-eye image, respectively, or an active light emitting panel produces a first image and a second image of different wavelengths. When a user is wearing glasses with different light filters on the left and right lenses to filter out the right-eye image and the left-eye image, respectively, the user receives 3D visual effects from the images.
    Type: Application
    Filed: May 22, 2014
    Publication date: December 18, 2014
    Applicant: National Taiwan University
    Inventor: Ching-Fuh Lin
  • Publication number: 20140361396
    Abstract: The present invention provides a hot-carrier photoelectric conversion method. The method includes a hot-carrier photoelectric conversion device having a P-type semiconductor layer, an N-type semiconductor layer, and an inorganic conducting light-absorbing layer. The inorganic conducting light-absorbing layer is formed between the P-type semiconductor layer and the N-type semiconductor layer, and an electric field is formed between the P-type semiconductor layer and the N-type semiconductor layer. Moreover, photons are absorbed by the inorganic conducting light-absorbing layer to create electrons and holes. The electrons and holes are respectively shifted by the electric field or diffusion effect to the N-type semiconductor layer and the P-type semiconductor layer, so that the electrons and the holes are respectively conducted outside to create electric energy.
    Type: Application
    Filed: February 19, 2014
    Publication date: December 11, 2014
    Applicant: National Taiwan University
    Inventors: Ching-Fuh Lin, Hsin-Yi Chen, Jiun-Jie Chao, Hong-Jhang Syu
  • Patent number: 8889017
    Abstract: The present invention relates to a method for producing silicon waveguides on non-SOI substrate (non-silicon-on-insulator substrate), and particularly relates to a method for producing silicon waveguides on silicon substrate with a laser. This method includes the following steps: (1) forming a ridge structure with high aspect ratio on a non-SOI substrate; (2) melting and reshaping the ridge structure by laser illumination for forming a structure having broad upper part and narrow lower part; and (3) oxidizing the structure having broad upper part and narrow lower part to form a silicon waveguide.
    Type: Grant
    Filed: April 27, 2012
    Date of Patent: November 18, 2014
    Assignee: National Taiwan University
    Inventors: Ching-Fuh Lin, Shih-Che Hung, Shu-Jia Syu