Patents by Inventor Ching-Hsueh Chiu

Ching-Hsueh Chiu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10418512
    Abstract: A method for manufacturing light emitting diode crystal grains includes steps of providing a first substrate; forming a buffer layer on the first substrate; forming a UV blocking layer on buffer layer; and forming a plurality of light emitting diode crystal grains on the buffer layer. The emitting diode crystal grains together form a wafer. An auxiliary substrate is provided and coated with an adhesive layer. The auxiliary substrate is pressed to the wafer, the adhesive layer fills gaps between the light emitting diode crystal grains, and solidifies the adhesive layer. The second surface is irradiated and gasified. The first substrate is thus separated from the UV blocking layer and the adhesive layer is dissolved, thus achieving a plurality of light-emitting diode crystal grains.
    Type: Grant
    Filed: December 6, 2017
    Date of Patent: September 17, 2019
    Assignee: ADVANCED OPTOELECTRONIC TECHNOLOGY INC.
    Inventors: Po-Min Tu, Tzu-Chien Hung, Chia-Hui Shen, Chien-Shiang Huang, Chien-Chung Peng, Ya-Wen Lin, Ching-Hsueh Chiu
  • Patent number: 10416225
    Abstract: A detection method for an LED chip comprising the following steps: providing a container with a solvent therein, and putting the LED chips in the container to mix the LED chips with the solvent; providing a base with a circuit therein, the base forms a plurality of receiving holes, a bottom of each receiving holes have an N electrode and a P electrode coupled with the circuit; transferring the solvent and the LED chip mixed in the solvent on the base; detecting the LED chip received in the receiving holes; providing a carrier film and classifying the LED chips on the carrier film.
    Type: Grant
    Filed: November 28, 2017
    Date of Patent: September 17, 2019
    Assignee: ADVANCED OPTOELECTRONICS TECHNOLOGY INC.
    Inventors: Po-Min Tu, Tzu-Chien Hung, Chia-Hui Shen, Chien-Shiang Huang, Chien-Chung Peng, Ya-Wen Lin, Ching-Hsueh Chiu
  • Publication number: 20190198708
    Abstract: An epitaxial wafer as a light emitting diode (LED) comprises a sapphire substrate, a buffer layer, an N-type semiconductor layer, a light emitting active layer, and a P type semiconductor layer. The buffer layer, the N-type semiconductor layer, the light emitting active layer, and the P type semiconductor layer are formed on C-plane of the sapphire substrate in that order. The light-emitting active layer comprises at least one quantum well structure, with a quantum well region, a gradient region, a high-content aluminum region, and a blocking region. The blocking region covers and is connected to the high-content aluminum region, the P-type semiconductor layer of aluminum-doped or indium-doped gallium nitride covers the gradient region. Content of aluminum or indium changes linearly from side close to the N-type semiconductor layer to side furthest from the N-type semiconductor layer.
    Type: Application
    Filed: March 29, 2018
    Publication date: June 27, 2019
    Inventors: CHING-HSUEH CHIU, PO-MIN TU, YA-WEN LIN
  • Publication number: 20190140136
    Abstract: A method for manufacturing light emitting diode crystal grains includes steps of providing a first substrate; forming a buffer layer on the first substrate; forming a UV blocking layer on buffer layer; and forming a plurality of light emitting diode crystal grains on the buffer layer. The emitting diode crystal grains together form a wafer. An auxiliary substrate is provided and coated with an adhesive layer. The auxiliary substrate is pressed to the wafer, the adhesive layer fills gaps between the light emitting diode crystal grains, and solidifies the adhesive layer. The second surface is irradiated and gasified. The first substrate is thus separated from the UV blocking layer and the adhesive layer is dissolved, thus achieving a plurality of light-emitting diode crystal grains.
    Type: Application
    Filed: December 6, 2017
    Publication date: May 9, 2019
    Inventors: PO-MIN TU, TZU-CHIEN HUNG, CHIA-HUI SHEN, CHIEN-SHIANG HUANG, CHIEN-CHUNG PENG, YA-WEN LIN, CHING-HSUEH CHIU
  • Publication number: 20190128951
    Abstract: A detection method for an LED chip comprising the following steps: providing a container with a solvent therein, and putting the LED chips in the container to mix the LED chips with the solvent; providing a base with a circuit therein, the base forms a plurality of receiving holes, a bottom of each receiving holes have an N electrode and a P electrode coupled with the circuit; transferring the solvent and the LED chip mixed in the solvent on the base; detecting the LED chip received in the receiving holes; providing a carrier film and classifying the LED chips on the carrier film.
    Type: Application
    Filed: November 28, 2017
    Publication date: May 2, 2019
    Inventors: PO-MIN TU, TZU-CHIEN HUNG, CHIA-HUI SHEN, CHIEN-SHIANG HUANG, CHIEN-CHUNG PENG, YA-WEN LIN, CHING-HSUEH CHIU
  • Patent number: 10109770
    Abstract: A light emitting diode includes a first electrode, a second electrode, and an epitaxial structure. The epitaxial structure is arranged on the first electrode, and electrically connects with the first electrode and the second electrode. The second electrode surrounds periphery of the epitaxial structure to reflect light from the epitaxial structure out from the top of the epitaxial structure. A method for manufacturing the light emitting diode is also presented. The light emitting diode and the method increase lighting efficiency of the light emitting diode.
    Type: Grant
    Filed: August 22, 2017
    Date of Patent: October 23, 2018
    Assignee: ADVANCED OPTOELECTRONIC TECHNOLOGY, INC
    Inventors: Ching-Hsueh Chiu, Chia-Hung Huang, Ya-Wen Lin, Po-Min Tu, Shih-Cheng Huang
  • Patent number: 10050176
    Abstract: An LED die includes a substrate, a pre-growth layer, a first insulating layer and a light emitting structure. The pre-growth layer, the first insulating layer and the light emitting structure are formed on the structure that order. The substrate includes a first electrode, a second electrode and an insulating part. The insulating part is formed between the first electrode and the second electrode. The LED die further includes a second insulating layer and a metal layer which are formed around the pre-growth layer. The present disclosure includes a method for manufacturing the LED die.
    Type: Grant
    Filed: June 6, 2017
    Date of Patent: August 14, 2018
    Assignee: ADVANCED OPTOELECTRONIC TECHNOLOGY, INC.
    Inventors: Ching-Hsueh Chiu, Ya-Wen Lin, Po-Min Tu, Shih-Cheng Huang
  • Publication number: 20170373227
    Abstract: A light emitting diode includes a first electrode, a second electrode, and an epitaxial structure. The epitaxial structure is arranged on the first electrode, and electrically connects with the first electrode and the second electrode. The second electrode surrounds periphery of the epitaxial structure to reflect light from the epitaxial structure out from the top of the epitaxial structure. A method for manufacturing the light emitting diode is also presented. The light emitting diode and the method increase lighting efficiency of the light emitting diode.
    Type: Application
    Filed: August 22, 2017
    Publication date: December 28, 2017
    Inventors: CHING-HSUEH CHIU, CHIA-HUNG HUANG, YA-WEN LIN, PO-MIN TU, SHIH-CHENG HUANG
  • Patent number: 9786818
    Abstract: A light emitting diode includes a first electrode, a second electrode and an epitaxial structure. The epitaxial structure is arranged on the first electrode, and electrically connects with the first electrode and the second electrode. The second electrode surrounds periphery of the epitaxial structure to reflect light from the epitaxial structure to emit out from the top of the epitaxial structure. This disclosure also relates to a method for manufacturing the light emitting diode. The light emitting diode and the method help solve the problem of low light efficiency of the light emitting diode.
    Type: Grant
    Filed: August 11, 2015
    Date of Patent: October 10, 2017
    Assignee: ADVANCED OPTOELECTRONIC TECHNOLOGY, INC.
    Inventors: Ching-Hsueh Chiu, Chia-Hung Huang, Ya-Wen Lin, Po-Min Tu, Shih-Cheng Huang
  • Publication number: 20170271558
    Abstract: An LED die includes a substrate, a pre-growth layer, a first insulating layer and a light emitting structure. The pre-growth layer, the first insulating layer and the light emitting structure are formed on the structure that order. The substrate includes a first electrode, a second electrode and an insulating part. The insulating part is formed between the first electrode and the second electrode. The LED die further includes a second insulating layer and a metal layer which are formed around the pre-growth layer. The present disclosure includes a method for manufacturing the LED die.
    Type: Application
    Filed: June 6, 2017
    Publication date: September 21, 2017
    Inventors: CHING-HSUEH CHIU, YA-WEN LIN, PO-MIN TU, SHIH-CHENG HUANG
  • Patent number: 9722142
    Abstract: An LED die includes a substrate, a pre-growth layer, a first insulating layer and a light emitting structure. The pre-growth layer, the first insulating layer and the light emitting structure are formed on the structure that order. The substrate includes a first electrode, a second electrode and an insulating part. The insulating part is formed between the first electrode and the second electrode. The LED die further includes a second insulating layer and a metal layer which are formed around the pre-growth layer. The present disclosure includes a method for manufacturing the LED die.
    Type: Grant
    Filed: September 14, 2015
    Date of Patent: August 1, 2017
    Assignee: ADVANCED OPTOELECTRONIC TECHNOLOGY, INC.
    Inventors: Ching-Hsueh Chiu, Ya-Wen Lin, Po-Min Tu, Shih-Cheng Huang
  • Patent number: 9680059
    Abstract: A flip-chip light emitting diode, including a substrate, an N-type semiconductor layer, a light emitting layer and a P-type semiconductor layer series mounted along a height direction of the flip-chip light emitting diode. A P electrode is formed on the P-type semiconductor layer and an N electrode is formed on the N-type semiconductor. A top surface of the substrate is away from the light emitting layer. A plurality of micron main portions is formed on the top surface. An outer surface of each main body has a plurality of nanometer protrusions. A method for manufacturing the flip chip light emitting diode is also provided.
    Type: Grant
    Filed: April 21, 2015
    Date of Patent: June 13, 2017
    Assignee: ADVANCED OPTOELECTRONIC TECHNOLOGY, INC.
    Inventors: Ching-Hsueh Chiu, Ya-Wen Lin, Po-Min Tu, Shih-Cheng Huang
  • Patent number: 9653648
    Abstract: An LED die includes a substrate, a first semiconductor layer, an active layer, a second semiconductor layer, a transparent conductive layer, a first electrode and a second electrode. The first semiconductor layer, the active layer, the second semiconductor layer and the transparent conductive layer are successively formed on the substrate. The first electrode and the second electrode respectively is formed on the first semiconductor layer and the transparent conductive layer. A plurality of grooves defined on the first semiconductor layer, and a plurality of hole groups defined on the second semiconductor layer. The present disclosure also provides a method of manufacturing the LED die.
    Type: Grant
    Filed: August 6, 2015
    Date of Patent: May 16, 2017
    Assignee: ADVANCED OPTOELECTRONIC TECHNOLOGY, INC.
    Inventors: Chia-Hung Huang, Ching-Hsueh Chiu, Shun-Kuei Yang, Po-Min Tu, Shih-Cheng Huang
  • Patent number: 9577163
    Abstract: The present disclosure provides a light emitting diode package including a substrate, a first electrode and a second electrode located on a first surface of the substrate, a plurality of light emitting diodes (LEDs) located between the first electrode and the second electrode, a plurality of retaining ring located on the first surface of the substrate. The LEDs are surrounded by the retaining ring therein. An encapsulation layer is mounted in the retaining ring and covers the LEDs therein. The encapsulation layer includes a first surface and an side surface extending from edges of the first surface. The side of the encapsulation layer contacts an inner surface of the retaining ring. The present disclosre also provides a method for manufacturing the above light emitting diode package.
    Type: Grant
    Filed: August 26, 2015
    Date of Patent: February 21, 2017
    Assignee: ADVANCED OPTOELECTRONIC TECHNOLOGY, INC.
    Inventors: Ching-Hsueh Chiu, Ya-Wen Lin, Po-Min Tu, Shih-Cheng Huang
  • Patent number: 9508896
    Abstract: A light emitting diode (LED) chip includes a first semiconductor layer, a first light emitting layer formed on the first semiconductor layer, a second light emitting layer formed on the first light emitting layer, and a second semiconductor layer formed on the second light emitting layer. The first light emitting layer emits light having a first color. The second light emitting layer emits light having a second color different from the first color.
    Type: Grant
    Filed: June 11, 2015
    Date of Patent: November 29, 2016
    Assignee: ADVANCED OPTOELECTRONICS TECHNOLOGY, INC.
    Inventors: Ching-Hsueh Chiu, Ya-Wen Lin, Po-Min Tu, Shih-Cheng Huang
  • Patent number: 9472721
    Abstract: An epitaxial substrate for growing a lighting emitting structure of a light emitting diode, includes a transparent base, a first buffer layer and a second buffer layer formed on the transparent base. The transparent base includes a first surface and a second surface opposite to the first surface. Plural protrusions are formed on the first surface of the transparent base. Each first buffer layer is formed on the outer surfaces of the plural protrusions. The second buffer layer fills in the recesses defined between two adjacent protrusions, and covers the first buffer layer. The refractive index of the first buffer layer is larger than that of the transparent base, and is less than that of the second buffer layer. This disclosure also relates a method for manufacturing the epitaxial substrate and a light emitting diode having the same.
    Type: Grant
    Filed: August 26, 2015
    Date of Patent: October 18, 2016
    Assignee: ADVANCED OPTOELECTRONIC TECHNOLOGY, INC.
    Inventors: Ching-Hsueh Chiu, Ya-Wen Lin, Po-Min Tu, Shih-Cheng Huang
  • Publication number: 20160240752
    Abstract: The present disclosure provides a light emitting diode package including a substrate, a first electrode and a second electrode located on a first surface of the substrate, a plurality of light emitting diodes (LEDs) located between the first electrode and the second electrode, a plurality of retaining ring located on the first surface of the substrate. The LEDs are surrounded by the retaining ring therein. An encapsulation layer is mounted in the retaining ring and covers the LEDs therein. The encapsulation layer includes a first surface and an side surface extending from edges of the first surface. The side of the encapsulation layer contacts an inner surface of the retaining ring. The present disclosre also provides a method for manufacturing the above light emitting diode package.
    Type: Application
    Filed: August 26, 2015
    Publication date: August 18, 2016
    Inventors: CHING-HSUEH CHIU, YA-WEN LIN, PO-MIN TU, SHIH-CHENG HUANG
  • Patent number: 9312658
    Abstract: An optoelectronic module includes a substrate, an LED and a laser LED formed on the substrate, simultaneously. A method for manufacturing an optoelectronic module includes following steps: providing a sapphire substrate, and forming two adoped GaN layers, an N-type GaN layer, an active layer and a P-type GaN layer on the sapphire substrate in sequence; providing a substrate and forming a metallic adhering layer on the substrate; forming an ohmic contact layer and a reflecting layer on the P-type GaN layer in series; arranging the reflecting layer on the adhering layer; stripping the sapphire substrate and the two doped GaN layers from the N-type GaN layer to form a semiconductor structure; etching a top end of the semiconductor structure to divide the semiconductor structure into a laser LED region and an LED region; forming two N-type electrodes on the LED region and an LED region, respectively.
    Type: Grant
    Filed: September 10, 2014
    Date of Patent: April 12, 2016
    Assignee: ADVANCED OPTOELECTRONIC TECHNOLOGY, INC.
    Inventors: Ching-Hsueh Chiu, Ya-Wen Lin, Po-Min Tu, Shih-Cheng Huang
  • Publication number: 20160093767
    Abstract: A light emitting diode includes a base and a semiconductor structure mounted on the base. The base includes a substrate that has a first surface and a second surface located opposite to the first surface. The first surface of the substrate forms a microstructure. The bottom of the microstructure covers the first surface. The microstructure is a plurality of mental portion bended continuously and includes a plurality of protruding structures. A top surface of each protruding structure is a flat plate. A method for manufacturing the light emitting diode is also provided.
    Type: Application
    Filed: July 31, 2015
    Publication date: March 31, 2016
    Inventors: CHING-HSUEH CHIU, YA-WEN LIN, PO-MIN TU, SHIH-CHENG HUANG
  • Publication number: 20160087151
    Abstract: An LED die includes a substrate, a pre-growth layer, a first insulating layer and a light emitting structure. The pre-growth layer, the first insulating layer and the light emitting structure are formed on the structure that order. The substrate includes a first electrode, a second electrode and an insulating part. The insulating part is formed between the first electrode and the second electrode. The LED die further includes a second insulating layer and a metal layer which are formed around the pre-growth layer. The present disclosure includes a method for manufacturing the LED die.
    Type: Application
    Filed: September 14, 2015
    Publication date: March 24, 2016
    Inventors: CHING-HSUEH CHIU, YA-WEN LIN, PO-MIN TU, SHIH-CHENG HUANG