Patents by Inventor Ching-Mei Hsu

Ching-Mei Hsu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220388293
    Abstract: A method for preparing a bifunctional film, including: (a) drying a first polymer solution to form a film to form an anti-adhesion layer, and (b) drying a second polymer solution over the anti-adhesion layer to form a film to form an attachment layer. The first polymer solution includes a first hydrophobic solution and a first hydrophilic solution, and in the first polymer solution, the weight ratio of the solute of the first hydrophobic solution to the solute of the first hydrophilic solution is 1:0.01-1. Moreover, the second polymer solution is composed of a second hydrophilic solution.
    Type: Application
    Filed: August 11, 2022
    Publication date: December 8, 2022
    Applicant: Industrial Technology Research Institute
    Inventors: Hsin-Hsin SHEN, Yu-Chi WANG, Ming-Chia YANG, Yu-Bing LIOU, Wei-Hong CHANG, Yun-Han LIN, Hsin-Yi HSU, Yun-Chung TENG, Chia-Jung LU, Yi-Hsuan LEE, Jian-Wei LIN, Kun-Mao KUO, Ching-Mei CHEN
  • Patent number: 11458715
    Abstract: A method for preparing a bifunctional film, including: (a) drying a first polymer solution to form a film to form an anti-adhesion layer; and (b) drying a second polymer solution over the anti-adhesion layer to form a film to form an attachment layer. The first polymer solution includes a first hydrophobic solution and a first hydrophilic solution, and in the first polymer solution, the weight ratio of the solute of the first hydrophobic solution to the solute of the first hydrophilic solution is 1:0.01-1. Moreover, the second polymer solution consists of a second hydrophilic solution.
    Type: Grant
    Filed: November 6, 2019
    Date of Patent: October 4, 2022
    Assignee: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Hsin-Hsin Shen, Yu-Chi Wang, Ming-Chia Yang, Yu-Bing Liou, Wei-Hong Chang, Yun-Han Lin, Hsin-Yi Hsu, Yun-Chung Teng, Chia-Jung Lu, Yi-Hsuan Lee, Jian-Wei Lin, Kun-Mao Kuo, Ching-Mei Chen
  • Patent number: 11417534
    Abstract: Exemplary methods for removing nitride may include flowing a fluorine-containing precursor into a remote plasma region of a semiconductor processing chamber. The methods may further include forming a plasma within the remote plasma region to generate plasma effluents of the fluorine-containing precursor and flowing the plasma effluents into a processing region of the semiconductor processing chamber housing a substrate. The substrate may include a high-aspect-ratio feature. The substrate may further include a region of exposed nitride and a region of exposed oxide. The methods may further include providing a hydrogen-containing precursor to the processing region to produce an etchant. At least a portion of the exposed nitride may be removed with the etchant.
    Type: Grant
    Filed: September 21, 2018
    Date of Patent: August 16, 2022
    Assignee: Applied Materials, Inc.
    Inventors: Ming Xia, Dongqing Yang, Ching-Mei Hsu
  • Publication number: 20220115263
    Abstract: Processing methods may be performed to form an airgap spacer on a semiconductor substrate. The methods may include forming a spacer structure including a first material and a second material different from the first material. The methods may include forming a source/drain structure. The source/drain structure may be offset from the second material of the spacer structure by at least one other material. The methods may also include etching the second material from the spacer structure to form the airgap. The source/drain structure may be unexposed to etchant materials during the etching.
    Type: Application
    Filed: December 22, 2021
    Publication date: April 14, 2022
    Applicant: Applied Materials, Inc.
    Inventors: Ashish Pal, Gaurav Thareja, Sankuei Lin, Ching-Mei Hsu, Nitin K. Ingle, Ajay Bhatnagar, Anchuan Wang
  • Patent number: 11211286
    Abstract: Processing methods may be performed to form an airgap spacer on a semiconductor substrate. The methods may include forming a spacer structure including a first material and a second material different from the first material. The methods may include forming a source/drain structure. The source/drain structure may be offset from the second material of the spacer structure by at least one other material. The methods may also include etching the second material from the spacer structure to form the airgap. The source/drain structure may be unexposed to etchant materials during the etching.
    Type: Grant
    Filed: February 15, 2019
    Date of Patent: December 28, 2021
    Assignee: Applied Materials, Inc.
    Inventors: Ashish Pal, Gaurav Thareja, Sankuei Lin, Ching-Mei Hsu, Nitin K. Ingle, Ajay Bhatnagar, Anchuan Wang
  • Publication number: 20200098586
    Abstract: Exemplary methods for removing nitride may include flowing a fluorine-containing precursor into a remote plasma region of a semiconductor processing chamber. The methods may further include forming a plasma within the remote plasma region to generate plasma effluents of the fluorine-containing precursor and flowing the plasma effluents into a processing region of the semiconductor processing chamber housing a substrate. The substrate may include a high-aspect-ratio feature. The substrate may further include a region of exposed nitride and a region of exposed oxide. The methods may further include providing a hydrogen-containing precursor to the processing region to produce an etchant. At least a portion of the exposed nitride may be removed with the etchant.
    Type: Application
    Filed: September 21, 2018
    Publication date: March 26, 2020
    Applicant: Applied Materials, Inc.
    Inventors: Ming Xia, Dongqing Yang, Ching-Mei Hsu
  • Publication number: 20190252239
    Abstract: Processing methods may be performed to form an airgap spacer on a semiconductor substrate. The methods may include forming a spacer structure including a first material and a second material different from the first material. The methods may include forming a source/drain structure. The source/drain structure may be offset from the second material of the spacer structure by at least one other material. The methods may also include etching the second material from the spacer structure to form the airgap. The source/drain structure may be unexposed to etchant materials during the etching.
    Type: Application
    Filed: February 15, 2019
    Publication date: August 15, 2019
    Applicant: Applied Materials, Inc.
    Inventors: Ashish Pal, Gaurav Thareja, San Kuei Lin, Ching-Mei Hsu, Nitin K. Ingle, Ajay Bhatnagar
  • Patent number: 9991134
    Abstract: Systems, chambers, and processes are provided for controlling process defects caused by moisture contamination. The systems may provide configurations for chambers to perform multiple operations in a vacuum or controlled environment. The chambers may include configurations to provide additional processing capabilities in combination chamber designs. The methods may provide for the limiting, prevention, and correction of aging defects that may be caused as a result of etching processes performed by system tools.
    Type: Grant
    Filed: April 7, 2014
    Date of Patent: June 5, 2018
    Assignee: Applied Materials, Inc.
    Inventors: Anchuan Wang, Xinglong Chen, Zihui Li, Hiroshi Hamana, Zhijun Chen, Ching-Mei Hsu, Jiayin Huang, Nitin K. Ingle, Dmitry Lubomirsky, Shankar Venkataraman, Randhir Thakur
  • Patent number: 9881805
    Abstract: A method of etching exposed silicon on patterned heterogeneous structures is described and includes a gas phase etch using plasma effluents formed in a remote plasma. The remote plasma excites a fluorine-containing precursor. Plasma effluents within the remote plasma are flowed into a substrate processing region where the plasma effluents combine with a hydrogen-containing precursor. The combination react with the patterned heterogeneous structures to remove an exposed silicon portion faster than a second exposed portion. The silicon selectivity results from the presence of an ion suppressor positioned between the remote plasma and the substrate processing region. The methods may be used to selectively remove silicon faster than silicon oxide, silicon nitride and a variety of metal-containing materials. The methods may be used to remove small etch amounts in a controlled manner and may result in an extremely smooth silicon surface.
    Type: Grant
    Filed: February 29, 2016
    Date of Patent: January 30, 2018
    Assignee: Applied Materials, Inc.
    Inventors: Zihui Li, Ching-Mei Hsu, Hanshen Zhang, Jingchun Zhang
  • Patent number: 9704723
    Abstract: Systems, chambers, and processes are provided for controlling process defects caused by moisture contamination. The systems may provide configurations for chambers to perform multiple operations in a vacuum or controlled environment. The chambers may include configurations to provide additional processing capabilities in combination chamber designs. The methods may provide for the limiting, prevention, and correction of aging defects that may be caused as a result of etching processes performed by system tools.
    Type: Grant
    Filed: November 9, 2015
    Date of Patent: July 11, 2017
    Assignee: Applied Materials, Inc.
    Inventors: Anchuan Wang, Xinglong Chen, Zihui Li, Hiroshi Hamana, Zhijun Chen, Ching-Mei Hsu, Jiayin Huang, Nitin K. Ingle, Dmitry Lubomirsky, Shankar Venkataraman, Randhir Thakur
  • Patent number: 9659792
    Abstract: Systems, chambers, and processes are provided for controlling process defects caused by moisture contamination. The systems may provide configurations for chambers to perform multiple operations in a vacuum or controlled environment. The chambers may include configurations to provide additional processing capabilities in combination chamber designs. The methods may provide for the limiting, prevention, and correction of aging defects that may be caused as a result of etching processes performed by system tools.
    Type: Grant
    Filed: July 24, 2015
    Date of Patent: May 23, 2017
    Assignee: Applied Materials, Inc.
    Inventors: Anchuan Wang, Xinglong Chen, Zihui Li, Hiroshi Hamana, Zhijun Chen, Ching-Mei Hsu, Jiayin Huang, Nitin K. Ingle, Dmitry Lubomirsky, Shankar Venkataraman, Randhir Thakur
  • Patent number: 9502258
    Abstract: A method of anisotropically dry-etching exposed substrate material on a patterned substrate is described. The patterned substrate has a gap formed in a single material made from, for example, a silicon-containing material or a metal-containing material. The method includes directionally ion-implanting the patterned structure to implant the bottom of the gap without implanting substantially the walls of the gap. Subsequently, a remote plasma is formed using a fluorine-containing precursor to etch the patterned substrate such that either (1) the walls are selectively etched relative to the floor of the gap, or (2) the floor is selectively etched relative to the walls of the gap. Without ion implantation, the etch operation would be isotropic owing to the remote nature of the plasma excitation during the etch process.
    Type: Grant
    Filed: December 23, 2014
    Date of Patent: November 22, 2016
    Assignee: Applied Materials, Inc.
    Inventors: Jun Xue, Ching-Mei Hsu, Zihui Li, Ludovic Godet, Anchuan Wang, Nitin K. Ingle
  • Patent number: 9449845
    Abstract: Methods of etching exposed titanium nitride with respect to other materials on patterned heterogeneous structures are described, and may include a remote plasma etch formed from a fluorine-containing precursor. Precursor combinations including plasma effluents from the remote plasma are flowed into a substrate processing region to etch the patterned structures with high titanium nitride selectivity under a variety of operating conditions. The methods may be used to remove titanium nitride at faster rates than a variety of metal, nitride, and oxide compounds.
    Type: Grant
    Filed: December 29, 2014
    Date of Patent: September 20, 2016
    Assignee: Applied Materials, Inc.
    Inventors: Jie Liu, Jingchun Zhang, Anchuan Wang, Nitin K. Ingle, Seung Park, Zhijun Chen, Ching-Mei Hsu
  • Patent number: 9449850
    Abstract: Systems, chambers, and processes are provided for controlling process defects caused by moisture contamination. The systems may provide configurations for chambers to perform multiple operations in a vacuum or controlled environment. The chambers may include configurations to provide additional processing capabilities in combination chamber designs. The methods may provide for the limiting, prevention, and correction of aging defects that may be caused as a result of etching processes performed by system tools.
    Type: Grant
    Filed: May 4, 2015
    Date of Patent: September 20, 2016
    Assignee: Applied Materials, Inc.
    Inventors: Anchuan Wang, Xinglong Chen, Zihui Li, Hiroshi Hamana, Zhijun Chen, Ching-Mei Hsu, Jiayin Huang, Nitin K. Ingle, Dmitry Lubomirsky, Shankar Venkataraman, Randhir Thakur
  • Publication number: 20160260616
    Abstract: A method of etching exposed silicon on patterned heterogeneous structures is described and includes a gas phase etch using plasma effluents formed in a remote plasma. The remote plasma excites a fluorine-containing precursor. Plasma effluents within the remote plasma are flowed into a substrate processing region where the plasma effluents combine with a hydrogen-containing precursor. The combination react with the patterned heterogeneous structures to remove an exposed silicon portion faster than a second exposed portion. The silicon selectivity results from the presence of an ion suppressor positioned between the remote plasma and the substrate processing region. The methods may be used to selectively remove silicon faster than silicon oxide, silicon nitride and a variety of metal-containing materials. The methods may be used to remove small etch amounts in a controlled manner and may result in an extremely smooth silicon surface.
    Type: Application
    Filed: February 29, 2016
    Publication date: September 8, 2016
    Inventors: Zihui Li, Ching-Mei Hsu, Hanshen Zhang, Jingchun Zhang
  • Patent number: 9437451
    Abstract: A method of etching exposed silicon oxide on patterned heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents combine with a nitrogen-and-hydrogen-containing precursor. Reactants thereby produced etch the patterned heterogeneous structures with high silicon oxide selectivity while the substrate is at high temperature compared to typical Siconiā„¢ processes. The etch proceeds without producing residue on the substrate surface. The methods may be used to remove silicon oxide while removing little or no silicon, polysilicon, silicon nitride or titanium nitride.
    Type: Grant
    Filed: May 4, 2015
    Date of Patent: September 6, 2016
    Assignee: Applied Materials, Inc.
    Inventors: Zhijun Chen, Jingchun Zhang, Ching-Mei Hsu, Seung Park, Anchuan Wang, Nitin K. Ingle
  • Patent number: 9412608
    Abstract: Methods of selectively etching tungsten relative to silicon-containing films (e.g. silicon oxide, silicon carbon nitride and (poly)silicon) as well as tungsten oxide are described. The methods include a remote plasma etch formed from a fluorine-containing precursor and/or hydrogen (H2). Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the tungsten. The plasma effluents react with exposed surfaces and selectively remove tungsten while very slowly removing other exposed materials. Sequential and simultaneous methods are included to remove thin tungsten oxide which may, for example, result from exposure to the atmosphere.
    Type: Grant
    Filed: February 9, 2015
    Date of Patent: August 9, 2016
    Assignee: Applied Materials, Inc.
    Inventors: Xikun Wang, Ching-Mei Hsu, Nitin K. Ingle, Zihui Li, Anchuan Wang
  • Patent number: 9378969
    Abstract: A method of etching carbon films on patterned heterogeneous structures is described and includes a gas phase etch using remote plasma excitation. The remote plasma excites a fluorine-containing precursor and an oxygen-containing precursor, the plasma effluents created are flowed into a substrate processing region. The plasma effluents etch the carbon film more rapidly than silicon, silicon nitride, silicon carbide, silicon carbon nitride and silicon oxide.
    Type: Grant
    Filed: June 19, 2014
    Date of Patent: June 28, 2016
    Assignee: Applied Materials, Inc.
    Inventors: Ching-Mei Hsu, Nitin K. Ingle, Hiroshi Hamana, Anchuan Wang
  • Publication number: 20160181112
    Abstract: A method of anisotropically dry-etching exposed substrate material on a patterned substrate is described. The patterned substrate has a gap formed in a single material made from, for example, a silicon-containing material or a metal-containing material. The method includes directionally ion-implanting the patterned structure to implant the bottom of the gap without implanting substantially the walls of the gap. Subsequently, a remote plasma is formed using a fluorine-containing precursor to etch the patterned substrate such that either (1) the walls are selectively etched relative to the floor of the gap, or (2) the floor is selectively etched relative to the walls of the gap. Without ion implantation, the etch operation would be isotropic owing to the remote nature of the plasma excitation during the etch process.
    Type: Application
    Filed: December 23, 2014
    Publication date: June 23, 2016
    Applicant: Applied Materials, Inc.
    Inventors: Jun Xue, Ching-Mei Hsu, Zihui Li, Ludovic Godet, Anchuan Wang, Nitin K. Ingle
  • Publication number: 20160064233
    Abstract: Systems, chambers, and processes are provided for controlling process defects caused by moisture contamination. The systems may provide configurations for chambers to perform multiple operations in a vacuum or controlled environment. The chambers may include configurations to provide additional processing capabilities in combination chamber designs. The methods may provide for the limiting, prevention, and correction of aging defects that may be caused as a result of etching processes performed by system tools.
    Type: Application
    Filed: November 9, 2015
    Publication date: March 3, 2016
    Inventors: Anchuan Wang, Xinglong Chen, Zihui Li, Hiroshi Hamana, Zhijun Chen, Ching-Mei Hsu, Jiayin Huang, Nitin K. Ingle, Dmitry Lubomirsky, Shankar Venkataraman, Randhir Thakur