Patents by Inventor Ching-Yueh Chen

Ching-Yueh Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11925035
    Abstract: A hybrid random access memory for a system-on-chip (SOC), including a semiconductor substrate with a MRAM region and a ReRAM region, a first dielectric layer on the semiconductor substrate, multiple ReRAM cells in the first dielectric layer on the ReRAM region, a second dielectric layer above the first dielectric layer, and multiple MRAM cells in the second dielectric layer on the MRAM region.
    Type: Grant
    Filed: October 26, 2022
    Date of Patent: March 5, 2024
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Po-Kai Hsu, Hui-Lin Wang, Ching-Hua Hsu, Yi-Yu Lin, Ju-Chun Fan, Hung-Yueh Chen
  • Patent number: 11860530
    Abstract: A photolithographic mask assembly according to the present disclosure accompanies a photolithographic mask. The photolithographic mask includes a capping layer over a substrate and an absorber layer disposed over the capping layer. The absorber layer includes a first main feature area, a second main feature area, and a venting feature area disposed between the first main feature area and the second main feature area. The venting feature area includes a plurality of venting features.
    Type: Grant
    Filed: June 30, 2022
    Date of Patent: January 2, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chi-Ta Lu, Chih-Chiang Tu, Cheng-Ming Lin, Ching-Yueh Chen, Wei-Chung Hu, Ting-Chang Hsu, Yu-Tung Chen
  • Publication number: 20230367197
    Abstract: A photolithographic mask assembly according to the present disclosure accompanies a photolithographic mask. The photolithographic mask includes a capping layer over a substrate and an absorber layer disposed over the capping layer. The absorber layer includes a first main feature area, a second main feature area, and a venting feature area disposed between the first main feature area and the second main feature area. The venting feature area includes a plurality of venting features.
    Type: Application
    Filed: July 27, 2023
    Publication date: November 16, 2023
    Inventors: Chi-Ta Lu, Chih-Chiang Tu, Cheng-Ming Lin, Ching-Yueh Chen, Wei-Chung Hu, Ting-Chang Hsu, Yu-Tung Chen
  • Publication number: 20220382168
    Abstract: In a method of manufacturing a semiconductor device, in an EUV scanner, an EUV lithography operation using an EUV mask is performed on a photo resist layer formed over a semiconductor substrate. After the EUV lithography operation, the EUV mask is unloaded from a mask stage of the EUV scanner. The EUV mask is placed under a reduced pressure below an atmospheric pressure. The EUV mask is heated under the reduced pressure at a first temperature in a range from 100° C. to 350 C°. After the heating, the EUV mask is stored in a mask stocker.
    Type: Application
    Filed: December 30, 2021
    Publication date: December 1, 2022
    Inventors: Chung-Hao CHANG, Ming-Wei CHEN, Ai-Jay MA, Ching-Yueh CHEN
  • Publication number: 20220350235
    Abstract: A photolithographic mask assembly according to the present disclosure accompanies a photolithographic mask. The photolithographic mask includes a capping layer over a substrate and an absorber layer disposed over the capping layer. The absorber layer includes a first main feature area, a second main feature area, and a venting feature area disposed between the first main feature area and the second main feature area. The venting feature area includes a plurality of venting features.
    Type: Application
    Filed: June 30, 2022
    Publication date: November 3, 2022
    Inventors: Chi-Ta Lu, Chih-Chiang Tu, Cheng-Ming Lin, Ching-Yueh Chen, Wei-Chung Hu, Ting-Chang Hsu, Yu-Tung Chen
  • Patent number: 11402743
    Abstract: A photolithographic mask assembly according to the present disclosure accompanies a photolithographic mask. The photolithographic mask includes a capping layer over a substrate and an absorber layer disposed over the capping layer. The absorber layer includes a first main feature area, a second main feature area, and a venting feature area disposed between the first main feature area and the second main feature area. The venting feature area includes a plurality of venting features.
    Type: Grant
    Filed: August 31, 2020
    Date of Patent: August 2, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chi-Ta Lu, Chih-Chiang Tu, Cheng-Ming Lin, Ching-Yueh Chen, Wei-Chung Hu, Ting-Chang Hsu, Yu-Tung Chen
  • Publication number: 20220066312
    Abstract: A photolithographic mask assembly according to the present disclosure accompanies a photolithographic mask. The photolithographic mask includes a capping layer over a substrate and an absorber layer disposed over the capping layer. The absorber layer includes a first main feature area, a second main feature area, and a venting feature area disposed between the first main feature area and the second main feature area. The venting feature area includes a plurality of venting features.
    Type: Application
    Filed: August 31, 2020
    Publication date: March 3, 2022
    Inventors: Chi-Ta Lu, Chih-Chiang Tu, Cheng-Ming Lin, Ching-Yueh Chen, Wei-Chung Hu, Ting-Chang Hsu, Yu-Tung Chen
  • Patent number: 11226551
    Abstract: The present disclosure provides a mask for photolithography patterning. The mask includes a substrate, a pattern layer on a surface of the substrate. The mask also includes a pellicle attached to the substrate and configured to isolate the pattern layer from ambient. The pellicle includes a membrane between the pattern layer and ambient, a frame for securing the membrane on the substrate, and an optical member disposed in the membrane. A method for manufacturing the mask is also provided.
    Type: Grant
    Filed: October 9, 2020
    Date of Patent: January 18, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Ching-Yueh Chen, Tzung-Shiun Liu
  • Patent number: 10969682
    Abstract: An apparatus includes a developing tank, and the developing tank has a sidewall and a bottom. A fluid manifold is adjacent the bottom of the developing tank. The fluid manifold includes a plurality of holes and a plurality of valves. Developer and rinsing fluid flow through the plurality of holes. Each of the plurality of the valves corresponds to a different hole of the plurality of holes, and the plurality of valves allow the developer and the rinsing fluid to flow through the holes when open and prevent the developer and the flowing liquid from flowing through the holes when closed. The developer flows through a developer inlet to the fluid manifold. The rinsing fluid flows through a rinsing fluid inlet to the fluid manifold. A controller is configured to individually control opening and closing of each of the plurality of valves.
    Type: Grant
    Filed: June 26, 2020
    Date of Patent: April 6, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Tzung-Shiun Liu, Chun-Lang Chen, Ching-Yueh Chen
  • Publication number: 20210033964
    Abstract: The present disclosure provides a mask for photolithography patterning. The mask includes a substrate, a pattern layer on a surface of the substrate. The mask also includes a pellicle attached to the substrate and configured to isolate the pattern layer from ambient. The pellicle includes a membrane between the pattern layer and ambient, a frame for securing the membrane on the substrate, and an optical member disposed in the membrane. A method for manufacturing the mask is also provided.
    Type: Application
    Filed: October 9, 2020
    Publication date: February 4, 2021
    Inventors: CHING-YUEH CHEN, TZUNG-SHIUN LIU
  • Publication number: 20200326622
    Abstract: An apparatus includes a developing tank, and the developing tank has a sidewall and a bottom. A fluid manifold is adjacent the bottom of the developing tank. The fluid manifold includes a plurality of holes and a plurality of valves. Developer and rinsing fluid flow through the plurality of holes. Each of the plurality of the valves corresponds to a different hole of the plurality of holes, and the plurality of valves allow the developer and the rinsing fluid to flow through the holes when open and prevent the developer and the flowing liquid from flowing through the holes when closed. The developer flows through a developer inlet to the fluid manifold. The rinsing fluid flows through a rinsing fluid inlet to the fluid manifold. A controller is configured to individually control opening and closing of each of the plurality of valves.
    Type: Application
    Filed: June 26, 2020
    Publication date: October 15, 2020
    Inventors: Tzung-Shiun LIU, Chun-Lang CHEN, Ching-Yueh CHEN
  • Patent number: 10802395
    Abstract: The present disclosure provides a mask for photolithography patterning. The mask includes a substrate, a pattern layer on a surface of the substrate. The mask also includes a pellicle attached to the substrate and configured to isolate the pattern layer from ambient. The pellicle includes a membrane between the pattern layer and ambient, and an optical member disposed in the membrane. A method for manufacturing the mask is also provided.
    Type: Grant
    Filed: September 19, 2018
    Date of Patent: October 13, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Ching-Yueh Chen, Tzung-Shiun Liu
  • Patent number: 10788764
    Abstract: An apparatus for generating a laminar flow includes an injection nozzle and a suction nozzle. The injection nozzle and the suction nozzle are operable to form the laminar flow for blocking particles from contacting a proximate surface of an object. The injection nozzle includes a main outlet to blow out the laminar flow. The injection nozzle is configured to generate a Coanda flow along an external surface of the injection nozzle. The suction nozzle is configured to provide a gas pressure gradient for the laminar flow.
    Type: Grant
    Filed: November 9, 2018
    Date of Patent: September 29, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Wen-Hao Cheng, Chue San Yoo, Ching-Yueh Chen
  • Patent number: 10698313
    Abstract: An apparatus includes a developing tank and a fluid manifold in the bottom of the developing tank. The fluid manifold includes a plurality of holes through which developer flows and a plurality of valves corresponding to the plurality of holes. The valves allow developer to flow through the holes when open and prevent developer from flowing through the holes when closed. A trench surrounds the fluid manifold through which developer is drained from the developing tank. A controller is configured to control opening and closing of the valves. In an embodiment, the apparatus includes a clamping mechanism configured to insert the substrate into and remove the substrate from the developing tank.
    Type: Grant
    Filed: November 2, 2018
    Date of Patent: June 30, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Tzung-Shiun Liu, Chun-Lang Chen, Ching-Yueh Chen
  • Publication number: 20200089102
    Abstract: The present disclosure provides a mask for photolithography patterning. The mask includes a substrate, a pattern layer on a surface of the substrate. The mask also includes a pellicle attached to the substrate and configured to isolate the pattern layer from ambient. The pellicle includes a membrane between the pattern layer and ambient, and an optical member disposed in the membrane. A method for manufacturing the mask is also provided.
    Type: Application
    Filed: September 19, 2018
    Publication date: March 19, 2020
    Inventors: CHING-YUEH CHEN, TZUNG-SHIUN LIU
  • Publication number: 20190155151
    Abstract: An apparatus includes a developing tank and a fluid manifold in the bottom of the developing tank. The fluid manifold includes a plurality of holes through which developer flows and a plurality of valves corresponding to the plurality of holes. The valves allow developer to flow through the holes when open and prevent developer from flowing through the holes when closed. A trench surrounds the fluid manifold through which developer is drained from the developing tank. A controller is configured to control opening and closing of the valves. In an embodiment, the apparatus includes a clamping mechanism configured to insert the substrate into and remove the substrate from the developing tank.
    Type: Application
    Filed: November 2, 2018
    Publication date: May 23, 2019
    Inventors: Tzung-Shiun LIU, Chun-Lang CHEN, Ching-Yueh CHEN
  • Publication number: 20190094719
    Abstract: An apparatus for generating a laminar flow includes an injection nozzle and a suction nozzle. The injection nozzle and the suction nozzle are operable to form the laminar flow for blocking particles from contacting a proximate surface of an object. The injection nozzle includes a main outlet to blow out the laminar flow. The injection nozzle is configured to generate a Coanda flow along an external surface of the injection nozzle. The suction nozzle is configured to provide a gas pressure gradient for the laminar flow.
    Type: Application
    Filed: November 9, 2018
    Publication date: March 28, 2019
    Inventors: Wen-Hao Cheng, Chue San Yoo, Ching-Yueh Chen
  • Patent number: 10168626
    Abstract: An apparatus for generating at least one particle shield. The at least one particle shield includes a first component and a second component. The first component and the second component are usable to form a first particle shield of the at least one particle shield for blocking particles from contacting a proximate surface of an object, the first particle shield is substantially parallel to and physically separated from the proximate surface of the object, and the first particle shield includes an energy gradient force or a velocity gradient force.
    Type: Grant
    Filed: January 5, 2017
    Date of Patent: January 1, 2019
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chue San Yoo, Ching-Yueh Chen, Wen-Hao Cheng
  • Patent number: 10126666
    Abstract: An apparatus for generating at least one particle shield in photolithography includes a first component and a second component. The first component and the second component are operable to form a first particle shield of the at least one particle shield for blocking particles from contacting a proximate surface of an object. The first component includes a first gas injector, and the second component includes a first gas extractor corresponding to the first gas injector. The first gas injector is configured to blow out a gas, thereby forming the first particle shield. The first gas extractor is configured to work with the first gas injector for providing gas pressure gradient for the first particle shield.
    Type: Grant
    Filed: September 28, 2017
    Date of Patent: November 13, 2018
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chue San Yoo, Ching-Yueh Chen, Wen-Hao Cheng
  • Publication number: 20180017880
    Abstract: An apparatus for generating at least one particle shield in photolithography includes a first component and a second component. The first component and the second component are operable to form a first particle shield of the at least one particle shield for blocking particles from contacting a proximate surface of an object. The first component includes a first gas injector, and the second component includes a first gas extractor corresponding to the first gas injector. The first gas injector is configured to blow out a gas, thereby forming the first particle shield. The first gas extractor is configured to work with the first gas injector for providing gas pressure gradient for the first particle shield.
    Type: Application
    Filed: September 28, 2017
    Publication date: January 18, 2018
    Inventors: Chue San Yoo, Ching-Yueh Chen, Wen-Hao Cheng