Abstract: A control method of a plasma processing apparatus including a first electrode that places a workpiece thereon includes supplying a bias power to the first electrode, and supplying a source power having a frequency higher than that of the bias power into a plasma processing space. The source power has a first state and a second state. The control method further includes a first control process of alternately applying the first state and the second state of the source power in synchronization with a signal synchronized with a cycle of a radio frequency of the bias power, or a phase within one cycle of a reference electrical state that represents any one of a voltage, current, and electromagnetic field measured in a power feeding system of the bias power.

Abstract: Disclosed is a processing apparatus for performing a processing on a workpiece using gas clusters. The processing apparatus includes: a processing container in which the workpiece is disposed, and an inside of which is maintained in a vacuum state; an exhaust mechanism that exhausts an atmosphere in the processing container; a gas supply unit that supplies a gas containing a cluster generating gas; a cluster nozzle provided in the processing container and configured to generate gas clusters by adiabatically expanding the cluster generating gas and inject a gas component containing the generated gas clusters into the processing container; and a plasma generating mechanism that generates plasma in the cluster nozzle portion. The gas clusters are ionized by the plasma generated in the cluster nozzle portion, and the ionized gas clusters are injected from the cluster nozzle and irradiated onto the workpiece, so that a predetermined processing is performed.

Abstract: An upper electrode for a plasma processing apparatus, includes an electrode having a gas discharge hole, a gas plate having a gas flow path formed at a position facing the gas discharge hole to supply a processing gas to the gas discharge hole, an electrostatic attraction part interposed between the electrode and the gas plate and having a contact surface that is in contact with a lower surface of the gas plate and an attraction surface that attracts an upper surface of the electrode, and a shield that shields radicals or gas moving from the gas discharge hole to a gap between the electrode and the gas plate.

Abstract: A plasma processing apparatus includes a plasma generation unit for converting a processing gas into plasma by an inductive coupling. The plasma generation unit includes a first high frequency antenna formed of a vortex coil having open opposite ends and, at a central portion of a line between the open ends, a supply point of a high frequency power and a grounding point grounded through a capacitor; a second high frequency antenna formed of a planar vortex coil disposed between first and second high frequency antenna elements of the first high frequency antenna; and an impedance adjustment unit for adjusting a resonant frequency of a circuit viewed from a high frequency power supply toward the first high frequency antenna which is configured to have two resonant frequencies depending on adjustment of the impedance adjustment unit when the frequency of the high frequency power is changed.

Abstract: In a disclosed plasma processing system, radio frequency power is supplied in a first period to generate plasma, and the power lever of the radio frequency power is set to a reduced power level in a second period. In the second period, bias power is applied to a lower electrode of a substrate support. The bias power changes a potential of the substrate within each cycle that is defined at a second frequency. In the second period, a direct-current voltage is applied to the upper electrode. The direct-current voltage is set such that within each cycle that is defined at the second frequency, a polarity thereof in a first sub-period is negative and an absolute value thereof in the first sub-period is larger than an absolute value thereof in a second sub-period.

Abstract: In an apparatus for plasma processing according to an exemplary embodiment, a radio frequency power source generates radio frequency power which is supplied for generation of a plasma. A bias power source supplies bias power to a lower electrode of a substrate support. The bias power varies a potential of a substrate within a cycle thereof. The radio frequency power is supplied in at least a part of a first period in the cycle, in which the potential of the substrate is relatively high. A power level of the radio frequency power is lowered in a second period in the cycle, in which the potential of the substrate is relatively low. In the first period and the second period, the sheath adjuster adjusts a position in a vertical direction of an upper end of a sheath above an edge ring.

Abstract: A control method of a plasma processing apparatus including a first electrode that places a workpiece thereon includes supplying a bias power to the first electrode, and supplying a source power having a frequency higher than that of the bias power into a plasma processing space. The source power has a first state and a second state. The control method further includes a first control process of alternately applying the first state and the second state of the source power in synchronization with a signal synchronized with a cycle of a radio frequency of the bias power, or a phase within one cycle of a reference electrical state that represents any one of a voltage, current, and electromagnetic field measured in a power feeding system of the bias power.

Abstract: In an apparatus for plasma processing according to an exemplary embodiment, a radio frequency power source generates radio frequency power which is supplied for generation of a plasma. A bias power source supplies bias power to a lower electrode of a substrate support. The bias power varies a potential of a substrate within a cycle thereof. The radio frequency power is supplied in at least a part of a first period in the cycle, in which the potential of the substrate is relatively high. A power level of the radio frequency power is lowered in a second period in the cycle, in which the potential of the substrate is relatively low. In the first period and the second period, the sheath adjuster adjusts a position in a vertical direction of an upper end of a sheath above an edge ring.

Abstract: A plasma processing method includes performing a first plasma processing in a processing chamber in a first period, and performing a second plasma processing in the processing chamber during a second period continuously after the first period. In the first period and the second period, a first radio-frequency power for bias is continuously supplied to a lower electrode. A second radio-frequency power for plasma generation may be supplied as a pulsed radio-frequency power in a first partial period in each cycle of the first radio-frequency power in the first period. The second radio-frequency power may be supplied as a pulsed radio-frequency power in a second partial period in each cycle of the first radio-frequency power in the second period.

Abstract: A plasma processing method includes performing a first plasma processing in a processing chamber in a first period, and performing a second plasma processing in the processing chamber during a second period continuously after the first period. In the first period and the second period, a first radio-frequency power for bias is continuously supplied to a lower electrode. A second radio-frequency power for plasma generation may be supplied as a pulsed radio-frequency power in a first partial period in each cycle of the first radio-frequency power in the first period. The second radio-frequency power may be supplied as a pulsed radio-frequency power in a second partial period in each cycle of the first radio-frequency power in the second period.

Abstract: A plasma processing apparatus includes: a chamber; a first lower electrode provided inside the chamber and having a substrate placement region on which a substrate is placed; a second lower electrode disposed in a region outside the substrate placement region; a first upper electrode disposed to face the substrate placement region; a second upper electrode disposed in a region outside the first upper electrode to face the second lower electrode; and a first power supply configured to supply a first periodic signal to the first lower electrode, wherein at least one of the second lower electrode and the second upper electrode includes a recess, and the second lower electrode or the second upper electrode is located on a normal line with respect to a surface of the recess.

Abstract: Disclosed is a plasma processing apparatus including a processing chamber configured to perform a processing on a wafer by plasma, a VF power supply configured to change a frequency of a high frequency power to be supplied into the chamber, a susceptor configured to mount the wafer thereon, and a focus ring disposed to surround the wafer. A first route, which passes through the plasma starting from the VF power supply, passes through the susceptor, the wafer and the plasma, and a second route, which passes through the plasma starting from the VF power supply, passes through the susceptor, the focus ring and the plasma. The reflection minimum frequency of the first route is different from the reflection minimum frequency of the second route, and the frequency range changeable by the VF power supply includes the reflection minimum frequencies of the first and second routes.

Abstract: A disclosed plasma processing method includes a direct-current power source configured to generate a negative direct-current voltage. A bias electrode of a substrate support provided in the chamber is alternately connected to the direct-current power source and the ground. A time until a potential of the bias electrode reaches a ground potential after the bias electrode is connected to the ground is set to be longer than a time until the potential of the bias electrode reaches the negative direct-current voltage after the direct-current power source is connected to the bias electrode.

Abstract: In a plasma processing according to an exemplary embodiment, a pulsed negative direct-current voltage is periodically applied to the lower electrode. A frequency defining a cycle at which the pulsed negative direct-current voltage is periodically applied to the lower electrode is lower than a frequency of radio frequency power which is supplied to generate plasma. The radio frequency power is supplied in a first partial period in the cycle. A power level of the radio frequency power in a second partial period in the cycle is set to a power level reduced from a power level of the radio frequency power in the first partial period.

Abstract: A plasma processing apparatus includes: a processing container; an electrode that places a substrate thereon within the processing container; a plasma generation source that supplies plasma into the processing container; a bias power supply that supplies bias power to the electrode; a part exposed to the plasma in the processing container; a DC power supply that supplies a DC voltage to the part; a controller that executes a process including a first control procedure in which a first state in which the DC voltage has a first voltage value and a second state in which the DC voltage has a second voltage value higher than the first voltage value are periodically repeated, and the first voltage value is applied in a partial period in each cycle of a potential of the electrode, and the second voltage value is applied such that the first state and the second state are continuous.

Abstract: A disclosed plasma processing apparatus includes a chamber, a substrate support, a radio frequency power source, and a bias power source. The radio frequency power source supplies radio frequency power. The bias power source supplies an electric to a bias electrode. An edge ring receives a part of the electric bias or another electric bias. An outer ring extends outside the edge ring in a radial direction and receives a part of the radio frequency power. A level of the radio frequency power is changed in synchronization with the electric bias within each cycle of the electric bias.

Abstract: A disclosed plasma processing apparatus includes a chamber, a substrate support, a plasma generator, and first and second power sources. The first power source is configured to generate an electric bias and electrically connected to a lower electrode of the substrate support provided in the chamber. The second power source is configured to apply a positive voltage to a member in a first period that is a part of a whole period in which the electric bias output from the first power source to the lower electrode has a potential not less than an average potential of the electric bias within a cycle thereof. The member is disposed to be exposed to plasma generated in the chamber. The first power source is configured to output the electric bias having a positive potential to the lower electrode in a second period after the first period.

Abstract: The disclosed plasma processing apparatus includes a chamber, a substrate support, a radio frequency power source, and a bias power source. The radio frequency power source generates radio frequency power to generate plasma. The bias power source is connected to a bias electrode of the substrate support, and generates an electric bias. An edge ring mounted on the substrate support receives a pat of the electric bias through an impedance adjuster or receives another electric bias. An outer ring extends outside the edge ring in a radial direction, and receives a part of the radio frequency power or other radio frequency power.

Abstract: A plasma processing apparatus includes: a processing container; an electrode that places a substrate thereon within the processing container; a plasma generation source that supplies plasma into the processing container; a bias power supply that supplies bias power to the electrode; a part exposed to the plasma in the processing container; a DC power supply that supplies a DC voltage to the part; a controller that executes a process including a first control procedure in which a first state in which the DC voltage has a first voltage value and a second state in which the DC voltage has a second voltage value higher than the first voltage value are periodically repeated, and the first voltage value is applied in a partial period in each cycle of a potential of the electrode, and the second voltage value is applied such that the first state and the second state are continuous.

Abstract: A control method of a plasma processing apparatus including a first electrode that places a workpiece thereon includes supplying a bias power to the first electrode, and supplying a source power having a frequency higher than that of the bias power into a plasma processing space. The source power has a first state and a second state. The control method further includes a first control process of alternately applying the first state and the second state of the source power in synchronization with a signal synchronized with a cycle of a radio frequency of the bias power, or a phase within one cycle of a reference electrical state that represents any one of a voltage, current, and electromagnetic field measured in a power feeding system of the bias power.