Abstract: A method of implanting a zinc (Zn)-ion into a nitride-based semiconductor substrate, the method includes: providing a homogeneous substrate on which a gallium nitride layer is grown; placing the homogeneous substrate in a crucible in which gallium nitride powders are coated; placing the crucible into a furnace; and performing a heat treatment process, so that a Zn-ion implantation is performed under an ammoniacal atmosphere in the furnace. The method of implanting a Zn-ion into a nitride-based semiconductor substrate, which can minimize a decomposition of a gallium nitride layer during a heat treatment process at a high temperature, easily produce a p-type, and reduce contact resistance between a semiconductor and a metal electrode, is provided.

Abstract: Provided are an interleaving apparatus and method in a communication system. The interleaving apparatus includes a determiner for determining whether a next index k to be generated is an index to be discarded, and if the next index k is the index to be discarded, generating a skip signal; an index generator responding to a clock to increase the next index k by “1” and output the increased index k, and if the skip signal is detected, increasing the index k by “2” and outputting the increased index k; and an address generator performing a predetermined operation using the index k generated by the index generator to generate an address required for interleaving. Thus, a number of clocks required for interleaving and/or deinterleaving can be reduced.

Abstract: A single crystalline a-plane nitride semiconductor wafer having no voids, bending or cracks can be rapidly and effectively prepared by hydride vapor phase epitaxy (HVPE) growth of the a-plane nitride semiconductor film on a single crystalline r-plane sapphire substrate at a temperature ranging from 950 to 1,100° C. and at a rate ranging from 30 to 300 ?m/hr.