Patents by Inventor Choong-Ho Lee
Choong-Ho Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240122025Abstract: A display device includes: a pixel defining layer defining openings arranged in first and second directions, the openings forming emission areas in which light emitting elements are disposed to emit light of different colors; a light blocking layer disposed on the pixel defining layer, and defining holes, each overlapping the opening and having a larger diameter than the opening; and color filters disposed on the light blocking layer to overlap the holes and overlap the emission areas. The opening has an opening interval, which is defined as a difference in diameter between the overlapping hole and the opening, in the openings, among homogeneous openings in which the light emitting elements for emitting light of the same color are disposed, the homogeneous openings adjacent in the first or second direction have different opening intervals, and among the homogeneous openings, openings having different opening intervals are at least three types.Type: ApplicationFiled: May 2, 2023Publication date: April 11, 2024Inventors: Chan Young KIM, Yeong Ho LEE, Ha Seok JEON, Jun Hee LEE, Choong Youl IM, Hyun Duck CHO, Kook Hyun CHOI
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Patent number: 11920233Abstract: A thin film deposition apparatus used to produce large substrates on a mass scale and improve manufacturing yield. The thin film deposition apparatus includes a deposition source; a first nozzle disposed at a side of the deposition source and including a plurality of first slits arranged in a first direction; a second nozzle disposed opposite to the first nozzle and including a plurality of second slits arranged in the first direction; and a barrier wall assembly including a plurality of barrier walls arranged in the first direction so as to partition a space between the first nozzle and the second nozzle.Type: GrantFiled: February 23, 2023Date of Patent: March 5, 2024Assignee: Samsung Display Co., Ltd.Inventors: Choong-Ho Lee, Jung-Min Lee
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Publication number: 20240067071Abstract: A vehicle assist handle is formed so that a guide block is mounted on a surface of a headliner on which the assist handle is mounted and which is fixedly fitted into or separated from the guide block in a sliding manner to be used for other purposes by separating the assist handle from the surface of the headliner. The vehicle assist handle may be pushed in a direction parallel to the surface of the headliner to be assembled or separated when slidably guided to the guide block. The guide block can support a weight of an occupant applied to the assist handle. The vehicle assist handle can be used safely and conveniently. In addition, as a sunglass case, a storage case, or a rack may be fixedly coupled to the guide block in the sliding manner.Type: ApplicationFiled: July 20, 2023Publication date: February 29, 2024Applicant: DAEHAN SOLUTION CO., LTDInventors: Choong HO KWON, Young-Jae LEE
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Publication number: 20230193448Abstract: A thin film deposition apparatus used to produce large substrates on a mass scale and improve manufacturing yield. The thin film deposition apparatus includes a deposition source; a first nozzle disposed at a side of the deposition source and including a plurality of first slits arranged in a first direction; a second nozzle disposed opposite to the first nozzle and including a plurality of second slits arranged in the first direction; and a barrier wall assembly including a plurality of barrier walls arranged in the first direction so as to partition a space between the first nozzle and the second nozzle.Type: ApplicationFiled: February 23, 2023Publication date: June 22, 2023Inventors: Choong-Ho Lee, Jung-Min Lee
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Patent number: 11624107Abstract: A thin film deposition apparatus used to produce large substrates on a mass scale and improve manufacturing yield. The thin film deposition apparatus includes a deposition source; a first nozzle disposed at a side of the deposition source and including a plurality of first slits arranged in a first direction; a second nozzle disposed opposite to the first nozzle and including a plurality of second slits arranged in the first direction; and a barrier wall assembly including a plurality of barrier walls arranged in the first direction so as to partition a space between the first nozzle and the second nozzle.Type: GrantFiled: June 22, 2020Date of Patent: April 11, 2023Assignee: Samsung Display Co., Ltd.Inventors: Choong-Ho Lee, Jung-Min Lee
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Patent number: 10886364Abstract: A reinforced vertical-NAND structure is provided. The reinforced vertical-NAND structure includes a first set of interleaved oxide and nitride layers formed into first and second vertical structures. The first vertical structure rises from a first section of a substrate and the second vertical structure rises from a second section of the substrate. The reinforced vertical-NAND structure also includes a reinforcing layer and a second set of interleaved oxide and nitride layers formed into third and fourth vertical structures. The reinforcing layer includes sheets, which are distinct and laid across respective tops of the first and second vertical structures, and bridges connecting the sheets. The third vertical structure rises from the sheet corresponding to the first vertical structure and the fourth vertical structure rises from the sheet corresponding to the second vertical structure.Type: GrantFiled: February 6, 2018Date of Patent: January 5, 2021Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Adam Yang, Choong Ho Lee, Elnatan Mataev, Jonathan Fry, Cheng-Yi Lin, Bharat Biyani, Jang Sim
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Publication number: 20200318228Abstract: A thin film deposition apparatus used to produce large substrates on a mass scale and improve manufacturing yield. The thin film deposition apparatus includes a deposition source; a first nozzle disposed at a side of the deposition source and including a plurality of first slits arranged in a first direction; a second nozzle disposed opposite to the first nozzle and including a plurality of second slits arranged in the first direction; and a barrier wall assembly including a plurality of barrier walls arranged in the first direction so as to partition a space between the first nozzle and the second nozzle.Type: ApplicationFiled: June 22, 2020Publication date: October 8, 2020Inventors: Choong-Ho Lee, Jung-Min Lee
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Patent number: 10689746Abstract: A thin film deposition apparatus used to produce large substrates on a mass scale and improve manufacturing yield. The thin film deposition apparatus includes a deposition source; a first nozzle disposed at a side of the deposition source and including a plurality of first slits arranged in a first direction; a second nozzle disposed opposite to the first nozzle and including a plurality of second slits arranged in the first direction; and a barrier wall assembly including a plurality of barrier walls arranged in the first direction so as to partition a space between the first nozzle and the second nozzle.Type: GrantFiled: December 28, 2017Date of Patent: June 23, 2020Assignee: Samsung Display Co., Ltd.Inventors: Choong-Ho Lee, Jung-Min Lee
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Publication number: 20190245032Abstract: A reinforced vertical-NAND structure is provided. The reinforced vertical-NAND structure includes a first set of interleaved oxide and nitride layers formed into first and second vertical structures. The first vertical structure rises from a first section of a substrate and the second vertical structure rises from a second section of the substrate. The reinforced vertical-NAND structure also includes a reinforcing layer and a second set of interleaved oxide and nitride layers formed into third and fourth vertical structures. The reinforcing layer includes sheets, which are distinct and laid across respective tops of the first and second vertical structures, and bridges connecting the sheets. The third vertical structure rises from the sheet corresponding to the first vertical structure and the fourth vertical structure rises from the sheet corresponding to the second vertical structure.Type: ApplicationFiled: February 6, 2018Publication date: August 8, 2019Inventors: Adam Yang, Choong Ho Lee, Elnatan Mataev, Jonathan Fry, Cheng-Yi Lin, Bharat Biyani, Jang Sim
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Publication number: 20180331201Abstract: Provided are field effect transistors and methods of fabricating the same. The transistor may include a substrate with an active pattern, the active pattern having a top surface and two sidewalls, a gate electrode proximal to the top surface and the sidewalls of the active pattern and crossing the active pattern, a gate spacer covering a sidewall of the gate electrode, a gate dielectric pattern at a bottom surface of the gate electrode, a source electrode on the active pattern at one side of the gate electrode, a drain electrode on the active pattern at another side of the gate electrode, and silicide patterns on surfaces of the source and drain electrodes, respectively. The gate dielectric pattern includes at least one high-k layer and the gate spacer has a dielectric constant that is smaller than that of the gate dielectric pattern.Type: ApplicationFiled: July 3, 2018Publication date: November 15, 2018Inventors: Choong-Ho Lee, Donggu Yi, Seung Chul Lee, Hyungsuk Lee, Seonah Nam, Changwoo Oh, Jongwook Lee, Song-Yi Han
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Publication number: 20180119267Abstract: A thin film deposition apparatus used to produce large substrates on a mass scale and improve manufacturing yield. The thin film deposition apparatus includes a deposition source; a first nozzle disposed at a side of the deposition source and including a plurality of first slits arranged in a first direction; a second nozzle disposed opposite to the first nozzle and including a plurality of second slits arranged in the first direction; and a barrier wall assembly including a plurality of barrier walls arranged in the first direction so as to partition a space between the first nozzle and the second nozzle.Type: ApplicationFiled: December 28, 2017Publication date: May 3, 2018Inventors: Choong-Ho Lee, Jung-Min Lee
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Patent number: 9953828Abstract: A frame and a mask assembly having the same. The frame supports both ends of each unit mask, each unit mask applying a tensile force in a first direction. The frame includes a frame main body part forming an opening exposing the unit mask, and a first through hole formed by passing through the frame main body part.Type: GrantFiled: June 14, 2013Date of Patent: April 24, 2018Assignee: Samsung Display Co., Ltd.Inventors: Yoon-Chan Oh, Choong-Ho Lee, Da-Hee Jeong
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Patent number: 9893190Abstract: A fin field effect transistor (fin FET) is formed using a bulk silicon substrate and sufficiently guarantees a top channel length formed under a gate, by forming a recess having a predetermined depth in a fin active region and then by forming the gate in an upper part of the recess. A device isolation film is formed to define a non-active region and a fin active region in a predetermined region of the substrate. In a portion of the device isolation film a first recess is formed, and in a portion of the fin active region a second recess having a depth shallower than the first recess is formed. A gate insulation layer is formed within the second recess, and a gate is formed in an upper part of the second recess. A source/drain region is formed in the fin active region of both sides of a gate electrode.Type: GrantFiled: April 24, 2017Date of Patent: February 13, 2018Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Keun-Nam Kim, Hung-Mo Yang, Choong-Ho Lee
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Patent number: 9873937Abstract: A thin film deposition apparatus used to produce large substrates on a mass scale and improve manufacturing yield. The thin film deposition apparatus includes a deposition source; a first nozzle disposed at a side of the deposition source and including a plurality of first slits arranged in a first direction; a second nozzle disposed opposite to the first nozzle and including a plurality of second slits arranged in the first direction; and a barrier wall assembly including a plurality of barrier walls arranged in the first direction so as to partition a space between the first nozzle and the second nozzle.Type: GrantFiled: August 27, 2015Date of Patent: January 23, 2018Assignee: Samsung Display Co., Ltd.Inventors: Choong-Ho Lee, Jung-Min Lee
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Patent number: 9782861Abstract: A metal sheet holding device for manufacturing a pattern mask used in manufacturing processes of a flat panel displays include a first holder and second holder. The first holder includes an adhesive layer contacting edge portions of a metal sheet, and a first frame supporting the metal sheet using the adhesive layer. The second holder includes a second frame below the first frame, a supported plate positioned at the center of the second frame, and an adhered unit positioned between the central portion of a metal sheet and the supported plate. The adhered unit generates an electrostatic force or a magnetic force to hold the central portion of the metal sheet.Type: GrantFiled: October 1, 2013Date of Patent: October 10, 2017Assignee: Samsung Display Co., Ltd.Inventors: Choong-Ho Lee, Sung-Sik Yun, Tong-Jin Park, Doh-Hyoung Lee
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Publication number: 20170229581Abstract: A fin field effect transistor (fin FET) is formed using a bulk silicon substrate and sufficiently guarantees a top channel length formed under a gate, by forming a recess having a predetermined depth in a fin active region and then by forming the gate in an upper part of the recess. A device isolation film is formed to define a non-active region and a fin active region in a predetermined region of the substrate. In a portion of the device isolation film a first recess is formed, and in a portion of the fin active region a second recess having a depth shallower than the first recess is formed. A gate insulation layer is formed within the second recess, and a gate is formed in an upper part of the second recess. A source/drain region is formed in the fin active region of both sides of a gate electrode.Type: ApplicationFiled: April 24, 2017Publication date: August 10, 2017Inventors: Keun-Nam Kim, Hung-Mo YANG, Choong-Ho LEE
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Patent number: 9656291Abstract: Disclosed is a method of manufacturing a metal mask. A method of manufacturing a metal mask in accordance with an exemplary embodiment of the present invention includes forming through holes in a plate using a laser, by scanning the laser onto sequentially smaller overlapping portions of the plate.Type: GrantFiled: September 4, 2014Date of Patent: May 23, 2017Assignee: Samsung Display Co., Ltd.Inventors: Choong Ho Lee, Tong-Jin Park, Doh-Hyoung Lee, Sung Sik Yun, Da Hee Jeong, Jun Ho Jo
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Patent number: 9660191Abstract: A thin film deposition apparatus including a deposition source having a crucible to contain a deposition material and a heater to heat and vaporize the deposition material; a nozzle unit disposed at a side of the deposition source along a first direction and having a plurality of nozzle slits to discharge the deposition material that was vaporized; a plurality of emission coefficient increasing units disposed toward the nozzle unit within the deposition source and increasing a quantity of motion of the deposition material that is discharged toward the nozzle unit; a patterning slit sheet disposed opposite to the nozzle unit and having a plurality of patterning slits arranged along the first direction; and a barrier plate assembly disposed between the nozzle unit and the patterning slit sheet along the first direction, and having a plurality of barrier plates that partition a space between the nozzle unit and the patterning slit sheet into a plurality of sub-deposition spaces.Type: GrantFiled: February 9, 2015Date of Patent: May 23, 2017Assignee: Samsung Display Co., Ltd.Inventors: Choong-Ho Lee, Jung-Min Lee, Jun-Sik Oh
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Patent number: 9643280Abstract: A laser processing apparatus includes: a laser generator that generates a laser beam, a diffractive optical element that divides the laser beam generated by the laser generator into a plurality of sub-laser beams, and a beam gap adjustor that adjusts a gap between neighboring ones of the plurality of sub-laser beams. Therefore, by installing a diffractive optical element that divides a laser beam that is generated by the laser generator into the plurality of sub-laser beams and a beam gap adjustor to adjust a gap between a plurality of sub-laser beams, the laser processing apparatus can form a processing pattern of various resolutions in a shadow mask while improving a processing speed of the shadow mask.Type: GrantFiled: November 20, 2013Date of Patent: May 9, 2017Assignees: Samsung Display Co., Ltd., FRAUNHOFER-GESELLSCHAFT ZUR FORDERUNG DER ANGEWANDTEN FORSCHUNG E.V.Inventors: Doh-Hyoung Lee, Choong-Ho Lee, Sung-Sik Yun, Tong-Jin Park, Arnold Gillner, Nelli Hambach, Stephan Eifel, Jens Holtkamp, Lasse Büsing, Alexander Gatej
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Patent number: 9640665Abstract: A fin field effect transistor (fin FET) is formed using a bulk silicon substrate and sufficiently guarantees a top channel length formed under a gate, by forming a recess having a predetermined depth in a fin active region and then by forming the gate in an upper part of the recess. A device isolation film is formed to define a non-active region and a fin active region in a predetermined region of the substrate. In a portion of the device isolation film a first recess is formed, and in a portion of the fin active region a second recess having a depth shallower than the first recess is formed. A gate insulation layer is formed within the second recess, and a gate is formed in an upper part of the second recess. A source/drain region is formed in the fin active region of both sides of a gate electrode.Type: GrantFiled: November 3, 2015Date of Patent: May 2, 2017Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Keun-Nam Kim, Hung-Mo Yang, Choong-Ho Lee