Abstract: A thin film deposition apparatus including a deposition source having a crucible to contain a deposition material and a heater to heat and vaporize the deposition material; a nozzle unit disposed at a side of the deposition source along a first direction and having a plurality of nozzle slits to discharge the deposition material that was vaporized; a plurality of emission coefficient increasing units disposed toward the nozzle unit within the deposition source and increasing a quantity of motion of the deposition material that is discharged toward the nozzle unit; a patterning slit sheet disposed opposite to the nozzle unit and having a plurality of patterning slits arranged along the first direction; and a barrier plate assembly disposed between the nozzle unit and the patterning slit sheet along the first direction, and having a plurality of barrier plates that partition a space between the nozzle unit and the patterning slit sheet into a plurality of sub-deposition spaces.

Abstract: A display device includes a substrate, a display unit formed on the substrate, a sealing substrate bonded to the substrate by a bonding layer surrounding the display unit, the sealing substrate comprising a complex member and an insulating member, wherein the complex member has a resin matrix and a plurality of carbon fibers and the insulator is connected to an edge of the complex member and comprises a penetration hole, a metal layer disposed at one side of the sealing substrate wherein the one side faces the substrate, and a conductive connection unit filling in the penetration hole and contacting the metal layer. The complex member and the insulator may be coupled by tongue and groovecoupling along a thickness direction of the sealing substrate where the protrusion-groove coupling structure is top-to-bottom symmetric and the insulator may have a thickness identical to that of the complex member.

Abstract: A fin field effect transistor (fin FET) is formed using a bulk silicon substrate and sufficiently guarantees a top channel length formed under a gate, by forming a recess having a predetermined depth in a fin active region and then by forming the gate in an upper part of the recess. A device isolation film is formed to define a non-active region and a fin active region in a predetermined region of the substrate. In a portion of the device isolation film a first recess is formed, and in a portion of the fin active region a second recess having a depth shallower than the first recess is formed. A gate insulation layer is formed within the second recess, and a gate is formed in an upper part of the second recess. A source/drain region is formed in the fin active region of both sides of a gate electrode.

Abstract: A mask for depositing a thin film according to an exemplary embodiment of the present invention includes: mask strips each including a plurality of pattern portions disposed end to end along one direction; and a frame on which the mask strips are positioned. Intervals between adjacent ends of adjacent pattern portions differ from each other according to distance from a predetermined location, thereby providing an organic light emitting diode display having a more uniform quality.

Abstract: Methods of forming patterns of a semiconductor device are provided. The methods may include forming a hard mask film on a semiconductor substrate. The methods may include forming first and second sacrificial film patterns that are spaced apart from each other on the hard mask film. The methods may include forming a first spacer on opposing sidewalls of the first sacrificial film pattern and a second spacer on opposing sidewalls of the second sacrificial film pattern. The methods may include removing the first and second sacrificial film patterns. The methods may include trimming the second spacer such that a line width of the second spacer becomes smaller than a line width of the first spacer. The methods may include forming first and second hard mask film patterns by etching the hard mask film using the first spacer and the trimmed second spacer as an etch mask.

Abstract: Disclosed is a method of manufacturing a metal mask. A method of manufacturing a metal mask in accordance with an exemplary embodiment of the present invention includes forming through holes in a plate using a laser, by scanning the laser onto sequentially smaller overlapping portions of the plate.

Abstract: A thin film deposition apparatus including a deposition source having a crucible to contain a deposition material and a heater to heat and vaporize the deposition material; a nozzle unit disposed at a side of the deposition source along a first direction and having a plurality of nozzle slits to discharge the deposition material that was vaporized; a plurality of emission coefficient increasing units disposed toward the nozzle unit within the deposition source and increasing a quantity of motion of the deposition material that is discharged toward the nozzle unit; a patterning slit sheet disposed opposite to the nozzle unit and having a plurality of patterning slits arranged along the first direction; and a barrier plate assembly disposed between the nozzle unit and the patterning slit sheet along the first direction, and having a plurality of barrier plates that partition a space between the nozzle unit and the patterning slit sheet into a plurality of sub-deposition spaces.

Abstract: A method of forming a pattern on a mask sheet using a laser beam includes determining a target scan line with respect to the mask sheet, which corresponds to a position of the pattern on a final mask sheet, determining a correction scan line with respect to the mask sheet, along which the laser beam is scanned to form the pattern of the final mask sheet, applying a counter force to the mask sheet, fixing the mask sheet onto a mask frame while the counter force is applied to the mask sheet, scanning the laser beam along the correction scan line, and releasing the counter force which is applied to the mask sheet.

Abstract: A method of manufacturing a thin film on a substrate including: disposing the substrate to be separated from a thin film deposition apparatus by a preset distance; passing vaporized deposition material through first slits of a first nozzle, the first slits arranged in a first direction; passing the vaporized deposition material received from the first slits through second slits of a second nozzle of the thin film deposition apparatus; using an adjusting member including an actuator set to adjust an orientation of the second nozzle relative to a deposition target area on the substrate on which the deposition material from the second nozzle is to be deposited; and depositing the deposition material from the second nozzle onto the deposition target area while the thin film deposition apparatus or the substrate is moved relative to the other, the second nozzle defining a pattern of deposition material on the substrate, is disclosed.

Abstract: Methods of forming patterns of a semiconductor device are provided. The methods may include forming a hard mask film on a semiconductor substrate. The methods may include forming first and second sacrificial film patterns that are spaced apart from each other on the hard mask film. The methods may include forming a first spacer on opposing sidewalls of the first sacrificial film pattern and a second spacer on opposing sidewalls of the second sacrificial film pattern. The methods may include removing the first and second sacrificial film patterns. The methods may include trimming the second spacer such that a line width of the second spacer becomes smaller than a line width of the first spacer. The methods may include forming first and second hard mask film patterns by etching the hard mask film using the first spacer and the trimmed second spacer as an etch mask.

Abstract: A thin film deposition apparatus that can be used to manufacture large substrates on a mass scale and that improves manufacturing yield, and an organic light-emitting display device manufactured using the thin film deposition apparatus.

Abstract: Provided are a semiconductor device including a high voltage transistor and a low voltage transistor and a method of manufacturing the same. The semiconductor device includes a semiconductor substrate including a high voltage region and a low voltage region; a high voltage transistor formed in the high voltage region and including a first active region, a first source/drain region, a first gate insulating layer, and a first gate electrode; and a low voltage transistor formed in the low voltage region and including a second active region, a second source/drain region, a second gate insulating layer, and a second gate electrode. The second source/drain region has a smaller thickness than a thickness of the first source/drain region.

Abstract: A thin film deposition apparatus capable of forming a precise deposition pattern on a large substrate includes a deposition source; a first nozzle disposed at a side of the deposition source having a plurality of first slits; a second nozzle disposed opposite to the first nozzle having a plurality of second slits; and a second nozzle frame bound to the second nozzle so as to support the second nozzle. The second nozzle frame includes two first frame portions spaced apart from each other and disposed in a direction in which the plurality of second slits are arranged, and two second frame portions each connecting the two first frame portions to each other, wherein the second frame portions are curved in the direction in which the plurality of second slits are arranged, so as to form arches.

Abstract: A thin film deposition apparatus to form a fine pattern on a large substrate. The thin film deposition apparatus includes a deposition source, a first nozzle that is disposed at a side of the deposition source and includes a plurality of first slits, a second nozzle that is disposed opposite to the deposition source and includes a plurality of second slits, and a second nozzle reinforcement unit that is disposed on the second nozzle and crosses the second nozzle.

Abstract: A metal sheet holding device for manufacturing a pattern mask used in manufacturing processes of a flat panel displays include a first holder and second holder. The first holder includes an adhesive layer contacting edge portions of a metal sheet, and a first frame supporting the metal sheet using the adhesive layer. The second holder includes a second frame below the first frame, a supported plate positioned at the center of the second frame, and an adhered unit positioned between the central portion of a metal sheet and the supported plate. The adhered unit generates an electrostatic force or a magnetic force to hold the central portion of the metal sheet.

Abstract: A method of manufacturing a display device includes: forming a display unit on a substrate; disposing a bonding layer including thermosetting resin and surrounding the display unit, on the substrate; forming a sealing substrate including a composite member and a metal layer disposed on one side of the composite member, the composite member including a resin matrix and a plurality of carbon fibers; disposing the sealing substrate on the bonding layer such that the metal layer faces the display unit; and bonding the substrate with the sealing substrate by hardening the bonding layer, connecting a power source to the plurality of carbon fibers to use the composite member as a heating body.

Abstract: A method of manufacturing an encapsulation substrate for an organic light emitting diode display, includes fabricating a composite panel by forming an uncured carbon fiber resin portion having a plate shape and including an upper surface and a lower surface and forming an uncured insulating resin portion arranged to surround edges of the carbon fiber resin portion, the uncured insulating resin portion being perforated by a plurality of penetration holes, inserting a plurality of conductive components into corresponding ones of the plurality of penetration holes, covering upper and lower surfaces of the composite panel with metal films and bonding the metal films to the composite panel while simultaneously curing the carbon fiber resin and the insulating resin portion by applying heat and pressure to the composite panel. Therefore, fabrication processes of the encapsulation substrate are simple, and fabrication costs are reduced.

Abstract: Provided are a semiconductor device including a high voltage transistor and a low voltage transistor and a method of manufacturing the same. The semiconductor device includes a semiconductor substrate including a high voltage region and a low voltage region; a high voltage transistor formed in the high voltage region and including a first active region, a first source/drain region, a first gate insulating layer, and a first gate electrode; and a low voltage transistor formed in the low voltage region and including a second active region, a second source/drain region, a second gate insulating layer, and a second gate electrode. The second source/drain region has a smaller thickness than a thickness of the first source/drain region.

Abstract: In one embodiment, the semiconductor memory device includes a semiconductor substrate having projecting portions, a tunnel insulation layer formed over at least one of the projecting semiconductor substrate portions, and a floating gate structure disposed over the tunnel insulation layer. An upper portion of the floating gate structure is wider than a lower portion of the floating gate structure, and the lower portion of the floating gate structure has a width less than a width of the tunnel insulating layer. First insulation layer portions are formed in the semiconductor substrate and project from the semiconductor substrate such that the floating gate structure is disposed between the projecting first insulation layer portions. A dielectric layer is formed over the first insulation layer portions and the floating gate structure, and a control gate is formed over the dielectric layer.

Abstract: A frit sealing system and a method of manufacturing an organic light-emitting display (OLED) using the frit sealing system are disclosed. In one embodiment, the frit sealing system includes: a thermal expansion film formed on the second substrate to pressurize the second substrate when heat is applied to the frit and thermal expansion film, wherein the frit is interposed between the first and second substrates and a mask formed on the thermal expansion film.