Patents by Inventor Christian Dussarrat

Christian Dussarrat has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210061833
    Abstract: The lanthanoid compound according to the present invention is a compound represented by the following general formula Ln(R1xCp)2(A)y or the following general formula Sm(R2xCp)2(A)y. In Ln(R1xCp)2(A)y, Ln is Nd, Eu, Dy, Tm, or Yb, R1 is independently Me, Et, nPr, iPr, nBt, sBu, iBu, or tAm, Cp is cyclopentadienyl, A is a linear or cyclic hydrocarbon containing oxygen, sulfur, phosphorus, or nitrogen, x is an integer of 2 to 3, and y is 0 to 2. In Sm(R2xCp)2(A)y, R2 is independently nPr, iPr, nBt, sBu, iBu, or tAm.
    Type: Application
    Filed: January 22, 2019
    Publication date: March 4, 2021
    Inventors: Christian DUSSARRAT, Takashi ONO, Tomohiro SEKI
  • Publication number: 20200395221
    Abstract: A method of an embodiment includes (i) a step of supplying a first gas to a chamber, wherein the first gas is perfiuorotetraglyme gas, and (ii) a step of generating plasma of a second gas for etching of a porous film in order to etch the porous film at the same time as the step of supplying a first gas or after the step of supplying a first gas. Partial pressure of the first gas in the chamber or pressure of the first gas in the chamber when only the first gas is supplied to the chamber is higher than critical pressure causing capillary condensation of the first gas in the porous film and is lower than saturated vapor pressure of the first gas at a temperature of the workpiece during execution of the step of supplying a first gas.
    Type: Application
    Filed: May 9, 2018
    Publication date: December 17, 2020
    Applicants: Tokyo Electron Limited, L'Air Liquide Societe Anonyme Pour L'Etude Et L'Exploitation Des Procedes Georges Claude, UNIVERSITE D'ORLEANS, CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE
    Inventors: Shigeru TAHARA, Keiichiro URABE, Peng SHEN, Christian DUSSARRAT, Jean-Francois DE MARNEFFE, Remi DUSSART, Thomas TILLOCHER
  • Patent number: 10731251
    Abstract: Disclosed are Group 6 film forming compositions comprising Group 6 transition metal-containing precursors selected from the group consisting of: M(?O)2(OR)2??Formula I, M(?O)(NR2)4??Formula II, M(?O)2(NR2)2??Formula III, M(?NR)2(OR)2??Formula IV, and M(?O)(OR)4??Formula V, wherein M is Mo or W and each R is independently H, a C1 to C6 alkyl group, or SiR?3, wherein R? is H or a C1 to C6 alkyl group. Also disclosed are methods of synthesizing and using the disclosed compositions to deposit Group 6 transition metal-containing films on substrates via vapor deposition processes.
    Type: Grant
    Filed: August 21, 2018
    Date of Patent: August 4, 2020
    Assignee: L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude
    Inventors: Clément Lansalot-Matras, Julien Lieffrig, Christian Dussarrat, Antoine Colas, Jong Min Kim
  • Patent number: 10720335
    Abstract: Replacement chemistries for the cC4F8 passivation gas in the Bosch etch process and processes for using the same are disclosed. These chemistries have the formula CxHyFz, with 1?x<7, 1?y?13, and 1?z?13. The replacement chemistries may reduce RIE lag associated with deep silicon aperture etching.
    Type: Grant
    Filed: August 28, 2018
    Date of Patent: July 21, 2020
    Assignees: American Air Liquide, Inc., L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude, Air Liquide Electronics U.S. LP
    Inventors: Peng Shen, Christian Dussarrat, Curtis Anderson, Rahul Gupta, Vincent M. Omarjee, Nathan Stafford
  • Publication number: 20200199749
    Abstract: Disclosed are Group 6 film forming compositions comprising Group 6 transition metal-containing precursors selected from the group consisting of: M(=O)2(OR)2 ??Formula I, M(=O)(NR2)4 ??Formula II, M(=O)2(NR2)2 ??Formula III, M(=NR)2(OR)2 ??Formula IV, and M(=O)(OR)4 ??Formula V, wherein M is Mo or W and each R is independently H, a C1 to C6 alkyl group, or SiR?3, wherein R? is H or a C1 to C6 alkyl group. Also disclosed are methods of synthesizing and using the disclosed compositions to deposit Group 6 transition metal-containing films on substrates via vapor deposition processes.
    Type: Application
    Filed: March 4, 2020
    Publication date: June 25, 2020
    Inventors: Clément LANSALOT-MATRAS, Julien LIEFFRIG, Christian DUSSARRAT, Antoine COLAS, Jong Min KIM
  • Publication number: 20200010630
    Abstract: A porous film sealing method and porous film sealing material are provided to seal an object to be sealed that has a porous film. The porous film sealing method of the present invention is characterized by including a first step that supplies a first material to a treatment vessel in which is stored an object to be treated that has a porous film, and the first material includes a non-aromatic fluorocarbon having 6 or more carbon atoms.
    Type: Application
    Filed: March 1, 2018
    Publication date: January 9, 2020
    Inventors: Keiichiro URABE, Peng SHEN, Christian DUSSARRAT, Taiki HATTORI, Shigeru TAHARA
  • Publication number: 20190326129
    Abstract: Etching gases are disclosed for plasma etching channel holes, gate trenches, staircase contacts, capacitor holes, contact holes, etc., in Si-containing layers on a substrate and plasma etching methods of using the same. The etching gases are trans-1,1,1,4,4,4-hexafluoro-2-butene; cis-1,1,1,4,4,4-hexafluoro-2-butene; hexafluoroisobutene; hexafluorocyclobutane (trans-1,1,2,2,3,4); pentafluorocyclobutane (1,1,2,2,3-); tetrafluorocyclobutane (1,1,2,2-); or hexafluorocyclobutane (cis-1,1,2,2,3,4). The etching gases may provide improved selectivity between the Si-containing layers and mask material, less damage to channel region, a straight vertical profile, and reduced bowing in pattern high aspect ratio structures.
    Type: Application
    Filed: July 3, 2019
    Publication date: October 24, 2019
    Inventors: Curtis ANDERSON, Rahul GUPTA, Vincent M. OMARJEE, Nathan STAFFORD, Christian DUSSARRAT
  • Patent number: 10381240
    Abstract: Etching gases are disclosed for plasma etching channel holes, gate trenches, staircase contacts, capacitor holes, contact holes, etc., in Si-containing layers on a substrate and plasma etching methods of using the same. The etching gases are trans-1,1,1,4,4,4-hexafluoro-2-butene; cis-1,1,1,4,4,4-hexafluoro-2-butene; hexafluoroisobutene; hexafluorocyclobutane (trans-1,1,2,2,3,4); pentafluorocyclobutane (1,1,2,2,3-); tetrafluorocyclobutane (1,1,2,2-); or hexafluorocyclobutane (cis-1,1,2,2,3,4). The etching gases may provide improved selectivity between the Si-containing layers and mask material, less damage to channel region, a straight vertical profile, and reduced bowing in pattern high aspect ratio structures.
    Type: Grant
    Filed: September 14, 2016
    Date of Patent: August 13, 2019
    Assignee: American Air Liquide, Inc.
    Inventors: Curtis Anderson, Rahul Gupta, Vincent M. Omarjee, Nathan Stafford, Christian Dussarrat
  • Patent number: 10217629
    Abstract: Method of deposition on a substrate of a dielectric film by introducing into a reaction chamber a vapor of a precursor selected from the group consisting of Zr(MeCp)(NMe2)3, Zr(EtCp)(NMe2)3, ZrCp(NMe2)3, Zr(MeCp)(NEtMe)3, Zr(EtCp)(NEtMe)3, ZrCp(NEtMe)3, Zr(MeCp)(NEt2)3, Zr(EtCp)(NEt2)3, ZrCp(NEt2)3, Zr(iPr2Cp)(NMe2)3, Zr(tBu2Cp)(NMe2)3, Hf(MeCp)(NMe2)3, Hf(EtCp)(NMe2)3, HfCp(NMe2)3, Hf(MeCp)(NEtMe)3, Hf(EtCp)(NEtMe)3, HfCp(NEtMe)3, Hf(MeCp)(NEt2)3, Hf(EtCp)(NEt2)3, HfCp(NEt2)3, Hf(iPr2Cp)(NMe2)3, Hf(tBu2Cp)(NMe2)3, and mixtures thereof; and depositing the dielectric film on the substrate.
    Type: Grant
    Filed: January 29, 2018
    Date of Patent: February 26, 2019
    Assignee: L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude
    Inventors: Christian Dussarrat, Nicolas Blasco, Audrey Pinchart, Christophe Lachaud
  • Publication number: 20180366336
    Abstract: Replacement chemistries for the cC4F8 passivation gas in the Bosch etch process and processes for using the same are disclosed. These chemistries have the formula CxHyFz, with 1?x<7, 1?y?13, and 1?z?13. The replacement chemistries may reduce RIE lag associated with deep silicon aperture etching.
    Type: Application
    Filed: August 28, 2018
    Publication date: December 20, 2018
    Inventors: Peng Shen, Christian Dussarrat, Curtis Anderson, Rahul Gupta, Vincent M. Omarjee, Nathan Stafford
  • Publication number: 20180355484
    Abstract: Disclosed are Group 6 film forming compositions comprising Group 6 transition metal-containing precursors selected from the group consisting of: M(?O)2(OR)2 ??Formula I, M(?O)(NR2)4 ??Formula II, M(?O)2(NR2)2 ??Formula III, M(?NR)2(OR)2 ??Formula IV, and M(?O)(OR)4 ??Formula V, wherein M is Mo or W and each R is independently H, a C1 to C6 alkyl group, or SiR?3, wherein R? is H or a C1 to C6 alkyl group. Also disclosed are methods of synthesizing and using the disclosed compositions to deposit Group 6 transition metal-containing films on substrates via vapor deposition processes.
    Type: Application
    Filed: August 21, 2018
    Publication date: December 13, 2018
    Inventors: Clément LANSALOT-MATRAS, Julien Lieffrig, Christian Dussarrat, Antoine Colas, Jong Min Kim
  • Patent number: 10106568
    Abstract: Disclosed are Hafnium-containing film forming compositions comprising Silicon- and Hafnium-containing precursors having one of the following formula: wherein each R1, R2, R3, R4, R5, R6, R7, R8, R9 and R10 is independently selected from H; a C1-C5 linear, branched, or cyclic alkyl group; or a C1-C5 linear, branched, or cyclic fluoroalkyl group. Also disclosed are methods of synthesizing the disclosed compositions and using the same to deposit Hafnium-containing thin films on substrates via vapor deposition processes.
    Type: Grant
    Filed: October 28, 2016
    Date of Patent: October 23, 2018
    Assignee: L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude
    Inventors: Christian Dussarrat, Jean-Marc Girard, Hana Ishii, Clément Lansalot-Matras, Julien Lieffrig
  • Patent number: 10103031
    Abstract: Replacement chemistries for the cC4F8 passivation gas in the Bosch etch process and processes for using the same are disclosed. These chemistries have the formula CxHyFz, with 1?x<7, 1?y?13, and 1?z?13. The replacement chemistries may reduce RIE lag associated with deep silicon aperture etching.
    Type: Grant
    Filed: September 8, 2017
    Date of Patent: October 16, 2018
    Assignees: L'Air Liquide Société Anonyme pour l'Etude et l'Exploitation des Georges Claude, American Air Liquide, Inc., Air Liquide Electronics U.S. LP
    Inventors: Peng Shen, Christian Dussarrat, Curtis Anderson, Rahul Gupta, Vincent M. Omarjee, Nathan Stafford
  • Patent number: 10094021
    Abstract: Disclosed are Group 6 film forming compositions comprising Group 6 transition metal-containing precursors selected from the group consisting of: M(=O)(NR2)4 Formula I, M(=O)2(NR2)2 Formula II, and M(=NR)2(OR)2 Formula III, wherein M is Mo or W and each R is independently H, a C1 to C6 alkyl group, or SiR?3, wherein R? is H or a C1 to C6 alkyl group. Also disclosed are methods of synthesizing and using the disclosed compositions to deposit Group 6 transition metal-containing films on substrates via vapor deposition processes.
    Type: Grant
    Filed: August 11, 2015
    Date of Patent: October 9, 2018
    Assignee: L'Air Liquide, Societe Anonyme pour I'Etude et I'Exploitation des Procedes Georges Claude
    Inventors: Clément Lansalot-Matras, Julien Lieffrig, Christian Dussarrat, Antoine Colas, Jong Min Kim
  • Publication number: 20180151354
    Abstract: Method of deposition on a substrate of a dielectric film by introducing into a reaction chamber a vapor of a precursor selected from the group consisting of Zr(MeCp)(NMe2)3, Zr(EtCp)(NMe2)3, ZrCp(NMe2)3, Zr(MeCp)(NEtMe)3, Zr(EtCp)(NEtMe)3, ZrCp(NEtMe)3, Zr(MeCp)(NEt2)3, Zr(EtCp)(NEt2)3, ZrCp(NEt2)3, Zr(iPr2Cp)(NMe2)3, Zr(tBu2Cp)(NMe2)3, Hf(MeCp)(NMe2)3, Hf(EtCp)(NMe2)3, HfCp(NMe2)3, Hf(MeCp)(NEtMe)3, Hf(EtCp)(NEtMe)3, HfCp(NEtMe)3, Hf(MeCp)(NEt2)3, Hf(EtCp)(NEt2)3, HfCp(NEt2)3, Hf(iPr2Cp)(NMe2)3, Hf(tBu2Cp)(NMe2)3, and mixtures thereof; and depositing the dielectric film on the substrate.
    Type: Application
    Filed: January 29, 2018
    Publication date: May 31, 2018
    Inventors: Christian DUSSARRAT, Nicolas BLASCO, Audrey PINCHART, Christophe LACHAUD
  • Patent number: 9938303
    Abstract: Disclosed are Si-containing thin film forming precursors, methods of synthesizing the same, and methods of using the same to deposit silicon-containing films using vapor deposition processes for manufacturing semiconductors, photovoltaics, LCD-TFT, flat panel-type devices, refractory materials, or aeronautics.
    Type: Grant
    Filed: July 19, 2013
    Date of Patent: April 10, 2018
    Assignee: American Air Liquide, Inc.
    Inventors: Christian Dussarrat, Glenn Kuchenbeiser, Venkateswara R. Pallem
  • Publication number: 20180076046
    Abstract: Replacement chemistries for the cC4F8 passivation gas in the Bosch etch process and processes for using the same are disclosed. These chemistries have the formula CxHyFz, with 1?x<7, 1?y?13, and 1?z?13. The replacement chemistries may reduce RIE lag associated with deep silicon aperture etching.
    Type: Application
    Filed: September 8, 2017
    Publication date: March 15, 2018
    Inventors: Peng SHEN, Christian DUSSARRAT, Curtis ANDERSON, Rahul GUPTA, Vincent M. OMARJEE, Nathan STAFFORD
  • Patent number: 9911590
    Abstract: Method of deposition on a substrate of a dielectric film by introducing into a reaction chamber a vapor of a precursor selected from the group consisting of Zr(MeCp)(NMe2)3, Zr(EtCp)(NMe2)3, ZrCp(NMe2)3, Zr(MeCp)(NEtMe)3, Zr(EtCp)(NEtMe)3, ZrCp(NEtMe)3, Zr(MeCp)(NEt2)3, Zr(EtCp)(NEt2)3, ZrCp(NEt2)3, Zr(iPr2Cp)(NMe2)3, Zr(tBu2Cp)(NMe2)3, Hf(MeCp)(NMe2)3, Hf(EtCp)(NMe2)3, HfCp(NMe2)3, Hf(MeCp)(NEtMe)3, Hf(EtCp)(NEtMe)3, HfCp(NEtMe)3, Hf(MeCp)(NEt2)3, Hf(EtCp)(NEt2)3, HfCp(NEt2)3, Hf(iPr2Cp)(NMe2)3, Hf(tBu2Cp)(NMe2)3, and mixtures thereof; and depositing the dielectric film on the substrate.
    Type: Grant
    Filed: January 17, 2017
    Date of Patent: March 6, 2018
    Assignee: L'Air Liquide Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude
    Inventors: Christian Dussarrat, Nicolas Blasco, Audrey Pinchart, Christophe Lachaud
  • Patent number: 9892932
    Abstract: Replacement chemistries for the cC4F8 passivation gas in the Bosch etch process and processes for using the same are disclosed. These chemistries have the formula CxHyFz, with 1 ?x<7, 1?y?13, and 1?z?13. The replacement chemistries may reduce RIE lag associated with deep silicon aperture etching.
    Type: Grant
    Filed: June 17, 2015
    Date of Patent: February 13, 2018
    Assignees: L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude, American Air Liquide, Inc., Air Liquide Electronics U.S. LP
    Inventors: Peng Shen, Christian Dussarrat, Curtis Anderson, Rahul Gupta, Vincent M. Omarjee, Nathan Stafford
  • Patent number: 9868753
    Abstract: Disclosed are Germanium- and Zirconium-containing precursors having one of the following formulae: wherein each R1, R2, R3, R4, R5, R6, R7, R8, R9 and R10 is independently selected from H; a C1-C5 linear, branched, or cyclic alkyl group; and a C1-C5 linear, branched, or cyclic fluoroalkyl groups. Also disclosed are methods of synthesizing the disclosed precursors and using the same to deposit Zirconium-containing films on substrates via vapor deposition processes.
    Type: Grant
    Filed: October 19, 2016
    Date of Patent: January 16, 2018
    Assignee: L'Air Liquide, Société Anonyme our l'Etude et l'Exploitation des Procédés Georges Claude
    Inventors: Clément Lansalot-Matras, Julien Lieffrig, Hana Ishii, Christian Dussarrat