Abstract: An optoelectronic semiconductor component having a light source, which emits primary radiation, a housing, and electrical terminals, wherein a conversion element, which is based on a matrix and at least two phosphors, is connected upstream of the optoelectronic semiconductor component. The matrix contains metal phosphate and preferably consists of metal phosphate. The phosphors partially or completely convert primary radiation. At least one first phosphor powder is embedded and fixed in a first inorganic matrix based on a metal phosphate, and at least one second phosphor powder is embedded and fixed in a second matrix based on a metal phosphate.

Abstract: A glass composition, a device and a method for producing the device are disclosed. In an embodiment, the glass composition includes a tellurium oxide in a proportion of at least 65 mol. % and at most 90 mol. %, R1O in a proportion between 0 mol. % and 20 mol. %, wherein R1 is selected from Mg, Ca, Sr, Ba, Zn, Mn and combinations thereof and at least one M12O in a proportion between 5 mol. % and 25 mol. %, wherein M1 is selected from Li, Na, K and combinations thereof. The glass component further includes at least one R22O3 in a proportion between 1 mol. % and 3 mol. %, wherein R2 is selected from Al, Ga, In, Bi, Sc, Y, La, rare earths and combinations thereof, and M2O2 in a proportion between 0 mol. % and 2 mol. %, wherein M2 is selected from Ti, Zr, Hf and combinations thereof.

Abstract: Various embodiments may relate to a process for producing a scattering layer for electromagnetic radiation. The process may include applying scattering centers onto a carrier, applying glass onto the scattering centers, and liquefying of the glass so that a part of the liquefied glass flows between the scattering centers toward the surface of the carrier, in such a way that a part of the liquefied glass still remains above the scattering centers.

Abstract: A conversion element, a component and a method for producing the component are disclosed. In an embodiment the conversion element includes a phosphor configured to convert electromagnetic primary radiation into electromagnetic secondary radiation and a glass composition as matrix material in which the phosphor is embedded. The glass composition has the following chemical composition: at least one tellurium oxide with a proportion of 65 mole % as a minimum and 90 mole % as a maximum, R1O with a proportion of between 0 mole % and 20 mole %, at least one M12O with a proportion of between 5 mole % and 25 mole %, at least one R22O3 with a proportion of between 1 mole % and 3 mole %, M2O2 with a proportion of between 0 mole % and 2 mole %, and R32O5 with a proportion of between 0 mole % and 6 mole %.

Abstract: An optoelectronic component may include a carrier, a protective layer on or above the carrier, a first electrode on or above the protective layer, an organic functional layer structure on or above the first electrode, and a second electrode on or above the organic functional layer structure. The protective layer has a lower transmission than the carrier for electromagnetic radiation having a wavelength of less than approximately 400 nm at least in one wavelength range. The protective layer includes a glass.

Abstract: A glass composition, a device and a method for producing the device are disclosed. In an embodiment, the glass composition includes a tellurium oxide in a proportion of at least 65 mol. % and at most 90 mol. %, R1O in a proportion between 0 mol. % and 20 mol. %, wherein R1 is selected from Mg, Ca, Sr, Ba, Zn, Mn and combinations thereof and at least one M12O in a proportion between 5 mol. % and 25 mol. %, wherein M1 is selected from Li, Na, K and combinations thereof. The glass component further includes at least one R22O3 in a proportion between 1 mol. % and 3 mol. %, wherein R2 is selected from Al, Ga, In, Bi, Sc, Y, La, rare earths and combinations thereof, and M2O2 in a proportion between 0 mol. % and 2 mol. %, wherein M2 is selected from Ti, Zr, Hf and combinations thereof.

Abstract: A conversion element, a component and a method for producing the component are disclosed. In an embodiment the conversion element includes a phosphor configured to convert electromagnetic primary radiation into electromagnetic secondary radiation and a glass composition as matrix material in which the phosphor is embedded. The glass composition has the following chemical composition: at least one tellurium oxide with a proportion of 65 mole % as a minimum and 90 mole % as a maximum, R1O with a proportion of between 0 mole % and 20 mole %, at least one M12O with a proportion of between 5 mole % and 25 mole %, at least one R22O3 with a proportion of between 1 mole % and 3 mole %, M2O2 with a proportion of between 0 mole % and 2 mole %, and R32O5 with a proportion of between 0 mole % and 6 mole %.

Abstract: A device for providing electromagnetic radiation may include a radiation arrangement for generating excitation radiation, and at least one conversion element for generating conversion radiation, which includes condensed metal phosphate and phosphors embedded in the condensed metal phosphate, and is arranged at a distance from the radiation arrangement in a beam path of the excitation radiation. The conversion element includes a silicatic matrix and alkali metal phosphate.

Abstract: An optoelectronic semiconductor component having a light source, which emits primary radiation, a housing, and electrical terminals, wherein a conversion element, which is based on a matrix and at least two phosphors, is connected upstream of the optoelectronic semiconductor component. The matrix contains metal phosphate and preferably consists of metal phosphate. The phosphors partially or completely convert primary radiation. At least one first phosphor powder is embedded and fixed in a first inorganic matrix based on a metal phosphate, and at least one second phosphor powder is embedded and fixed in a second matrix based on a metal phosphate.

Abstract: An optoelectronic component may include a carrier, a protective layer on or above the carrier, a first electrode on or above the protective layer, an organic functional layer structure on or above the first electrode, and a second electrode on or above the organic functional layer structure. The protective layer has a lower transmission than the carrier for electromagnetic radiation having a wavelength of less than approximately 400 nm at least in one wavelength range. The protective layer includes a glass.

Abstract: Various embodiments may relate to a process for producing a scattering layer for electromagnetic radiation. The process may include applying scattering centers onto a carrier, applying glass onto the scattering centers, and liquefying of the glass so that a part of the liquefied glass flows between the scattering centers toward the surface of the carrier, in such a way that a part of the liquefied glass still remains above the scattering centers.

Abstract: A device for providing electromagnetic radiation may include a radiation arrangement for generating excitation radiation, and at least one conversion element for generating conversion radiation, which includes condensed metal phosphate and phosphors embedded in the condensed metal phosphate, and is arranged at a distance from the radiation arrangement in a beam path of the excitation radiation. The conversion element includes a silicatic matrix and alkali metal phosphate.

Abstract: An optoelectronic semiconductor part comprising a light source, a housing and electrical connections, wherein the optoelectronic semiconductor part comprises a component which contains metal phosphate, and wherein the metal phosphate is substantially alkali-free and halogen-free.

Abstract: A gas discharge lamp may include: a discharge vessel; getter material in the discharge vessel, wherein the getter material has been introduced into the discharge vessel in anhydrous form. A method for producing the gas discharge lamp may include: introducing getter material into the discharge vessel of the gas discharge lamp, wherein the getter material is introduced into the discharge vessel in anhydrous form.

Abstract: A method for producing a conversion element for an optical and/or optoelectronic component is provided. The method may include at least: providing a transparent substrate, applying a layer, which contains powdered glass solder, vitrifying the layer by a first temperature treatment, whereby the glass solder of the layer is vitrified and thus converted into a transparent glass material having little intrinsic coloration, applying a phosphor-containing material to the layer, and performing a second temperature treatment, whereby phosphor of the phosphor-containing material sinks into the glass material of the layer.

Abstract: An optoelectronic semiconductor part comprising a light source, a housing and electrical connections, wherein the optoelectronic semiconductor part comprises a component which contains metal phosphate, and wherein the metal phosphate is substantially alkali-free and halogen-free.

Abstract: A discharge vessel with an excimer fill comprises a cap, electrodes and a fill having at least one noble gas and a halogen, which, when the lamp is operating, together form an excimer, the discharge vessel being manufactured from quartz glass. The inner wall of the discharge vessel is completely covered with a passivation layer of a metal oxide of the metals Al, Hf, Y or Sc or the mixed oxides thereof, the layer having an amorphous structure and its layer thickness being 20 to 200 nm.

Abstract: A discharge vessel with an excimer fill comprises a cap, electrodes and a fill having at least one noble gas and a halogen, which, when the lamp is operating, together form an excimer, the discharge vessel being manufactured from quartz glass. The inner wall of the discharge vessel is completely covered with a passivation layer of a metal oxide of the metals Al, Hf, Y or Sc or the mixed oxides thereof, the layer having an amorphous structure and its layer thickness being 20 to 200 nm.