Patents by Inventor Christoph Kadow

Christoph Kadow has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12274076
    Abstract: An integrated circuit includes a transistor, a first metallization layer above the transistor and electrically connected to the transistor, and a phase change switch, wherein at least a part of the phase change switch is provided below the first metallization layer, wherein the first metallization layer is provided laterally adjacent to the phase change switch, wherein the phase change switch comprises a heater, and wherein the heater and a part of the transistor are each provided in a lower-level interconnect layer of the integrated circuit.
    Type: Grant
    Filed: October 12, 2023
    Date of Patent: April 8, 2025
    Assignee: Infineon Technologies AG
    Inventors: Hans Taddiken, Christoph Glacer, Dominik Heiss, Christoph Kadow
  • Publication number: 20250089584
    Abstract: A method includes providing a substrate having a main surface, forming a layer of thermally insulating material on the main surface, forming strips of phase change material on the layer of thermally insulating material such that strips of phase change material are separated from the main surface by thermally insulating material, forming first and second RF terminals on the main surface that are laterally spaced apart from one another and connected to the strips of phase change material, and forming a heater structure having heating elements that are configured to control a conductive connection between the first and second RF terminals by applying heat to the one or more strips of phase change material, wherein each of the strips of phase change material includes multiple outer faces, and wherein portions of both outer faces from the strips of phase change material are disposed against one of the heating elements.
    Type: Application
    Filed: November 20, 2024
    Publication date: March 13, 2025
    Inventors: Dominik Heiss, Martin Bartels, Christoph Glacer, Christoph Kadow, Matthias Markert, Hans Taddiken, Hans-Dieter Wohlmuth
  • Patent number: 12212313
    Abstract: In an embodiment, a phase change switch device is provided. The phase change switch includes a phase change material, a set of heaters arranged to heat the phase change material, and a switch arrangement. The switch arrangement includes a plurality of switches, and is configured to selectively provide electrical power to the set of the heaters.
    Type: Grant
    Filed: October 27, 2023
    Date of Patent: January 28, 2025
    Assignee: Infineon Technologies AG
    Inventors: Dominik Heiss, Christoph Kadow, Hans Taddiken
  • Publication number: 20240404774
    Abstract: A switch device includes a phase change switch and a memory for storing a target state of the phase change switch. A controller determines a phase state of the phase change switch, and, if the state of the phase change switch does not correspond to the target state, controls a heater of the phase change switch to change the state of the phase changes switch to the target state.
    Type: Application
    Filed: August 12, 2024
    Publication date: December 5, 2024
    Inventors: Hans Taddiken, Dominik Heiss, Christoph Kadow
  • Patent number: 12156488
    Abstract: A method includes providing a substrate having a main surface, forming a layer of thermally insulating material on the main surface, forming strips of phase change material on the layer of thermally insulating material such that strips of phase change material are separated from the main surface by thermally insulating material, forming first and second RF terminals on the main surface that are laterally spaced apart from one another and connected to the strips of phase change material, and forming a heater structure having heating elements that are configured to control a conductive connection between the first and second RF terminals by applying heat to the one or more strips of phase change material, wherein each of the strips of phase change material includes multiple outer faces, and wherein portions of both outer faces from the strips of phase change material are disposed against one of the heating elements.
    Type: Grant
    Filed: December 21, 2022
    Date of Patent: November 26, 2024
    Assignee: Infineon Technologies AG
    Inventors: Dominik Heiss, Martin Bartels, Christoph Glacer, Christoph Kadow, Matthias Markert, Hans Taddiken, Hans-Dieter Wohlmuth
  • Patent number: 12068123
    Abstract: A switch device includes a phase change switch and a memory for storing a target state of the phase change switch. A controller determines a phase state of the phase change switch, and, if the state of the phase change switch does not correspond to the target state, controls a heater of the phase change switch to change the state of the phase changes switch to the target state.
    Type: Grant
    Filed: November 18, 2021
    Date of Patent: August 20, 2024
    Assignee: INFINEON TECHNOLOGIES AG
    Inventors: Hans Taddiken, Dominik Heiss, Christoph Kadow
  • Publication number: 20240145253
    Abstract: A device includes a thinned semiconductor substrate having a first side and a second side opposite to the first side; and at least one radio frequency device at the first side, wherein the second side of the thinned semiconductor substrate is processed to reduce leakage currents or to improve a radio frequency linearity of the at least one radio frequency device through Bosch etchin
    Type: Application
    Filed: January 9, 2024
    Publication date: May 2, 2024
    Inventors: Hans Taddiken, Christian Butschkow, Andrea Cattaneo, Henning Feick, Dominik Heiss, Christoph Kadow, Uwe Seidel, Valentyn Solomko, Anton Steltenpohl
  • Patent number: 11963466
    Abstract: A switch device including a semiconductor substrate is provided. A trench is formed in the substrate, and a phase change material is provided at least partially in the trench. A heater for heating the phase change material is also provided.
    Type: Grant
    Filed: May 26, 2021
    Date of Patent: April 16, 2024
    Assignee: Infineon Technologies AG
    Inventors: Dominik Heiss, Christoph Kadow, Matthias Markert
  • Patent number: 11948802
    Abstract: A device includes a thinned semiconductor substrate having a first side and a second side opposite to the first side; and at least one radio frequency device at the first side, wherein the second side of the thinned semiconductor substrate is processed to reduce leakage currents or to improve a radio frequency linearity of the at least one radio frequency device through Bosch etching.
    Type: Grant
    Filed: December 22, 2021
    Date of Patent: April 2, 2024
    Assignee: Infineon Technologies Dresden GmbH & Co. KG
    Inventors: Hans Taddiken, Christian Butschkow, Andrea Cattaneo, Henning Feick, Dominik Heiss, Christoph Kadow, Uwe Seidel, Valentyn Solomko, Anton Steltenpohl
  • Publication number: 20240056072
    Abstract: In an embodiment, a phase change switch device is provided. The phase change switch includes a phase change material, a set of heaters arranged to heat the phase change material, and a switch arrangement. The switch arrangement includes a plurality of switches, and is configured to selectively provide electrical power to the set of the heaters.
    Type: Application
    Filed: October 27, 2023
    Publication date: February 15, 2024
    Inventors: Dominik Heiss, Christoph Kadow, Hans Taddiken
  • Publication number: 20240040803
    Abstract: An integrated circuit includes a transistor, a first metallization layer above the transistor and electrically connected to the transistor, and a phase change switch, wherein at least a part of the phase change switch is provided below the first metallization layer, wherein the first metallization layer is provided laterally adjacent to the phase change switch, wherein the phase change switch comprises a heater, and wherein the heater and a part of the transistor are each provided in a lower-level interconnect layer of the integrated circuit.
    Type: Application
    Filed: October 12, 2023
    Publication date: February 1, 2024
    Inventors: Hans Taddiken, Christoph Glacer, Dominik Heiss, Christoph Kadow
  • Patent number: 11863168
    Abstract: In an embodiment, a phase change switch device is provided. The phase change switch includes a phase change material, a set of heaters arranged to heat the phase change material and a power source. A switch arrangement including a plurality of switches is provided, which is configured to selectively provide electrical power from the power source to the set of the heaters.
    Type: Grant
    Filed: July 22, 2022
    Date of Patent: January 2, 2024
    Assignee: Infineon Technologies AG
    Inventors: Dominik Heiss, Christoph Kadow, Hans Taddiken
  • Patent number: 11818900
    Abstract: An integrated circuit is provided. The integrated circuit includes a transistor, a first metallization layer above the transistor and electrically connected to the transistor, and a phase change switch. At least a part of the phase change switch is provided below the first metallization layer. The first metallization layer is provided laterally adjacent to the phase change switch. Moreover, a method is provided for manufacturing an integrated circuit. Further provided is a wafer for manufacturing an integrated circuit, and a method for manufacturing a wafer for manufacturing an integrated circuit.
    Type: Grant
    Filed: March 5, 2021
    Date of Patent: November 14, 2023
    Assignee: Infineon Technologies AG
    Inventors: Hans Taddiken, Christoph Glacer, Dominik Heiss, Christoph Kadow
  • Patent number: 11730068
    Abstract: A method of forming a phase change switching device includes providing a substrate, forming first and second RF terminals on the substrate, forming a strip of phase change material on the substrate that is connected between the first and second RF terminals, forming a heating element adjacent to the strip of phase change material such that the heating element is configured to control a conductive state of the strip of phase change material. The first and second RF terminals and the heating element are formed by a lithography process that self-aligns the heating element with the first and second RF terminals.
    Type: Grant
    Filed: June 17, 2021
    Date of Patent: August 15, 2023
    Assignee: Infineon Technologies AG
    Inventors: Dominik Heiss, Christoph Kadow, Matthias Markert
  • Publication number: 20230119033
    Abstract: A method includes providing a substrate having a main surface, forming a layer of thermally insulating material on the main surface, forming strips of phase change material on the layer of thermally insulating material such that strips of phase change material are separated from the main surface by thermally insulating material, forming first and second RF terminals on the main surface that are laterally spaced apart from one another and connected to the strips of phase change material, and forming a heater structure having heating elements that are configured to control a conductive connection between the first and second RF terminals by applying heat to the one or more strips of phase change material, wherein each of the strips of phase change material includes multiple outer faces, and wherein portions of both outer faces from the strips of phase change material are disposed against one of the heating elements.
    Type: Application
    Filed: December 21, 2022
    Publication date: April 20, 2023
    Inventors: Dominik Heiss, Martin Bartels, Christoph Glacer, Christoph Kadow, Matthias Markert, Hans Taddiken, Hans-Dieter Wohlmuth
  • Publication number: 20230021991
    Abstract: In an embodiment, a phase change switch device is provided. The phase change switch includes a phase change material, a set of heaters arranged to heat the phase change material and a power source. A switch arrangement including a plurality of switches is provided, which is configured to selectively provide electrical power from the power source to the set of the heaters.
    Type: Application
    Filed: July 22, 2022
    Publication date: January 26, 2023
    Inventors: Dominik Heiss, Christoph Kadow, Hans Taddiken
  • Patent number: 11563174
    Abstract: A switching device includes first and second RF terminals disposed over a substrate, one or more strips of phase change material connected between the first and second RF terminals, a region of thermally insulating material that separates the one or more strips of phase change material from the substrate, and a heater structure comprising one or more heating elements that are configured to control a conductive connection between the first and second RF terminals by applying heat to the one or more strips of phase change material. Each of the one or more strips of phase change material includes a first outer face and a second outer face opposite from the first outer face. For each of the one or more strips of phase change material, at least portions of both of the first and second outer faces are disposed against one of the heating elements.
    Type: Grant
    Filed: April 9, 2020
    Date of Patent: January 24, 2023
    Assignee: Infineon Technologies AG
    Inventors: Dominik Heiss, Martin Bartels, Christoph Glacer, Christoph Kadow, Matthias Markert, Hans Taddiken, Hans-Dieter Wohlmuth
  • Publication number: 20220407004
    Abstract: A method of forming a phase change switching device includes providing a substrate, forming first and second RF terminals on the substrate, forming a strip of phase change material on the substrate that is connected between the first and second RF terminals, forming a heating element adjacent to the strip of phase change material such that the heating element is configured to control a conductive state of the strip of phase change material.
    Type: Application
    Filed: June 17, 2021
    Publication date: December 22, 2022
    Inventors: Dominik Heiss, Christoph Kadow, Matthias Markert
  • Publication number: 20220199343
    Abstract: A switch device includes a phase change switch and a memory for storing a target state of the phase change switch. A controller determines a phase state of the phase change switch, and, if the state of the phase change switch does not correspond to the target state, controls a heater of the phase change switch to change the state of the phase changes switch to the target state.
    Type: Application
    Filed: November 18, 2021
    Publication date: June 23, 2022
    Inventors: Hans Taddiken, Dominik Heiss, Christoph Kadow
  • Publication number: 20220115499
    Abstract: A device includes a thinned semiconductor substrate having a first side and a second side opposite to the first side; and at least one radio frequency device at the first side, wherein the second side of the thinned semiconductor substrate is processed to reduce leakage currents or to improve a radio frequency linearity of the at least one radio frequency device through Bosch etching.
    Type: Application
    Filed: December 22, 2021
    Publication date: April 14, 2022
    Inventors: Hans Taddiken, Christian Butschkow, Andrea Cattaneo, Henning Feick, Dominik Heiss, Christoph Kadow, Uwe Seidel, Valentyn Solomko, Anton Steltenpohl