Abstract: A method is specified for production of an insulator layer. This method comprises the following process steps: A) providing a precursor comprising a mixture of a first, a second and a third component where—the first component comprises a compound of the general where R1 and R2 are each independently selected from a group comprising hydrogen and alkyl radicals and n=1 to 10 000; the second component comprises a compound of the general where R3 is an alkyl radical, and the third component comprises at least one amine compound; B) applying the precursor to a substrate; C) curing the precursor to form the insulator layer. The first compound comprises an epoxy group and a hydroxyl group. The second compound comprises an ester group. The curing takes place at room temperature or at temperatures between 50° C. and 260° C.

Abstract: An optoelectronic component may include a carrier, a first electrode over the carrier, an organically functional layer structure over the first electrode, a second electrode over the organically functional layer structure, and an encapsulation layer structure over the second electrode, the encapsulation layer structure encapsulating the organically functional layer structure and including a first layer structure facing toward the second electrode and a second layer structure facing away from the second electrode, the first layer structure alternately including first layers having a first expansion coefficient and second layers having a second expansion coefficient, which is not equal to the first expansion coefficient, and the second layer structure alternately including third layers having a third expansion coefficient and fourth layers having a fourth expansion coefficient, which is not equal to the third expansion coefficient.

Abstract: A method for producing an optoelectronic component may include forming an optoelectronic layer structure having a first adhesion layer, which comprises a first metallic material, above a carrier, providing a covering body with a second adhesion layer, which comprises a second metallic material, applying a first alloy to one of the two adhesion layers, the melting point of the first alloy being so low that the first alloy is liquid, coupling the covering body to the optoelectronic layer structure in such a way that both adhesion layers are in direct contact with the liquid first alloy, and reacting at least part of the liquid first alloy chemically with the metallic materials, as a result of which at least one second alloy is formed, which has a higher melting point than the first alloy, wherein the second alloy solidifies and fixedly connects the covering body to the optoelectronic layer structure.

Abstract: A method is specified for production of an insulator layer. This method comprises the following process steps: A) Providing a precursor comprising a mixture of a first, a second and a third component where—the first component comprises a compound of the general formula IA where R1 and R2 are each independently selected from a group comprising hydrogen and alkyl radicals and n=1 to 10 000; the second component comprises a compound of the general formula ILA where R3 is an alkyl radical, and the third component comprises at least one amine compound; B) applying the precursor to a substrate; C) curing the precursor to form the insulator layer.

Abstract: An optoelectronic component may include a carrier, a first electrode over the carrier, an organically functional layer structure over the first electrode, a second electrode over the organically functional layer structure, and an encapsulation layer structure over the second electrode, the encapsulation layer structure encapsulating the organically functional layer structure and including a first layer structure facing toward the second electrode and a second layer structure facing away from the second electrode, the first layer structure alternately including first layers having a first expansion coefficient and second layers having a second expansion coefficient, which is not equal to the first expansion coefficient, and the second layer structure alternately including third layers having a third expansion coefficient and fourth layers having a fourth expansion coefficient, which is not equal to the third expansion coefficient.

Abstract: A method for producing an optoelectronic component includes forming an optoelectronic layer structure including a functional layer structure above a carrier, forming a frame structure including a first metallic material on the optoelectronic layer structure such that a region above the functional layer structure is free of the frame structure and that the frame structure surrounds the region, forming an adhesion layer including a second metallic material above a covering body, applying a liquid first alloy to the optoelectronic layer structure and/or to the adhesion layer of the covering body in the region, coupling the covering body to the optoelectronic layer structure such that the adhesion layer is coupled to the frame structure and the liquid first alloy is in direct contact with the adhesion layer and the frame structure, and reacting part of the first alloy chemically with the metallic materials of the frame structure and the adhesion layer.

Abstract: A method for producing an optoelectronic component may include forming an optoelectronic layer structure having a first adhesion layer, which comprises a first metallic material, above a carrier, providing a covering body with a second adhesion layer, which comprises a second metallic material, applying a first alloy to one of the two adhesion layers, the melting point of the first alloy being so low that the first alloy is liquid, coupling the covering body to the optoelectronic layer structure in such a way that both adhesion layers are in direct contact with the liquid first alloy, and reacting at least part of the liquid first alloy chemically with the metallic materials, as a result of which at least one second alloy is formed, which has a higher melting point than the first alloy, wherein the second alloy solidifies and fixedly connects the covering body to the optoelectronic layer structure.

Abstract: A method for producing an optoelectronic component includes forming an optoelectronic layer structure including a functional layer structure above a carrier, forming a frame structure including a first metallic material on the optoelectronic layer structure such that a region above the functional layer structure is free of the frame structure and that the frame structure surrounds the region, forming an adhesion layer including a second metallic material above a covering body, applying a liquid first alloy to the optoelectronic layer structure and/or to the adhesion layer of the covering body in the region, coupling the covering body to the optoelectronic layer structure such that the adhesion layer is coupled to the frame structure and the liquid first alloy is in direct contact with the adhesion layer and the frame structure, and reacting part of the first alloy chemically with the metallic materials of the frame structure and the adhesion layer.