Patents by Inventor Christophe Maleville

Christophe Maleville has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10002882
    Abstract: A method for manufacturing a high-resistivity semiconductor-on-insulator substrate comprising the steps of: a) forming a dielectric layer and a semiconductor layer over a high-resistivity substrate, such that the dielectric layer is arranged between the high-resistivity substrate and the semiconductor layer; b) forming a hard mask or resist over the semiconductor layer, wherein the hard mask or resist has at least one opening at a predetermined position; c) forming at least one doped region in the high-resistivity substrate by ion implantation of an impurity element through the at least one opening of the hard mask or resist, the semiconductor layer and the dielectric layer; d) removing the hard mask or resist; and e) forming a radiofrequency (RF) circuit in and/or on the semiconductor layer at least partially overlapping the at least one doped region in the high-resistivity substrate.
    Type: Grant
    Filed: June 8, 2016
    Date of Patent: June 19, 2018
    Assignee: Soitec
    Inventors: Bich-Yen Nguyen, Frederic Allibert, Christophe Maleville
  • Patent number: 9824915
    Abstract: The invention relates to a structure for radiofrequency applications comprising: a monocrystalline substrate, a polycrystalline silicon layer directly on the monocrystalline substrate, and an active layer on the polycrystalline silicon layer intended to receive radiofrequency components. At least a first portion of the polycrystalline silicon layer extending from an interface of the polycrystalline silicon layer with the monocrystalline substrate layer includes carbon and/or nitrogen atoms located at the grain boundaries of the polycrystalline silicon layer at a concentration of between 2% and 20%. A process for manufacturing such a structure includes, during deposition of at least a first portion of such a polycrystalline silicon layer located at the interface with the monocrystalline substrate, depositing carbon and/or atoms in the at least a first portion.
    Type: Grant
    Filed: September 14, 2016
    Date of Patent: November 21, 2017
    Assignees: Soitec, Peregrine Semiconductor Corporation
    Inventors: Bich-Yen Nguyen, Christophe Maleville, Sinan Goktepeli, Anthony Mark Miscione, Alain Duvallet
  • Patent number: 9818874
    Abstract: Methods of forming a semiconductor structure include providing a multi-layer substrate having an epitaxial base layer overlying a strained primary semiconductor layer above a buried oxide layer. Elements within the epitaxial base layer are used to alter a strain state in the primary semiconductor layer within a first region of the multi-layer substrate without altering a strain state in the primary semiconductor layer within a second region of the multi-layer substrate. A first plurality of transistor channel structures are formed that each comprise a portion of the primary semiconductor layer within the first region of the multi-layer substrate, and a second plurality of transistor channel structures are formed that each comprise a portion of the primary semiconductor layer within the second region of the multi-layer substrate. Semiconductor structures fabricated by such methods may include transistor channel structures having differing strain states.
    Type: Grant
    Filed: May 23, 2016
    Date of Patent: November 14, 2017
    Assignee: Soitec
    Inventors: Bich-Yen Nguyen, Mariam Sadaka, Christophe Maleville
  • Publication number: 20170084478
    Abstract: The invention relates to a structure for radiofrequency applications comprising: a monocrystalline substrate, a polycrystalline silicon layer directly on the monocrystalline substrate, and an active layer on the polycrystalline silicon layer intended to receive radiofrequency components. At least a first portion of the polycrystalline silicon layer extending from the interface of the polycrystalline silicon layer with the monocrystalline layer includes carbon and/or nitrogen atoms located at the grain boundaries of the polycrystalline silicon at a concentration of between 2% and 20%. A process for manufacturing such a structure includes, during deposition of at least a first portion of such a polycrystalline silicon layer located at the interface with the monocrystalline substrate, depositing carbon and/or atoms in the portion.
    Type: Application
    Filed: September 14, 2016
    Publication date: March 23, 2017
    Inventors: Bich-Yen Nguyen, Christophe Maleville, Sinan Goktepeli, Anthony Mark Miscione, Alain Duvallet
  • Patent number: 9576798
    Abstract: Methods of fabricating a semiconductor structure include providing a semiconductor-on-insulator (SOI) substrate including a base substrate, a strained stressor layer above the base substrate, a surface semiconductor layer, and a dielectric layer between the stressor layer and the surface semiconductor layer. Ions are implanted into or through a first region of the stressor layer, and additional semiconductor material is formed on the surface semiconductor layer above the first region of the stressor layer. The strain state in the first region of the surface semiconductor layer above the first region of the stressor layer is altered, and a trench structure is formed at least partially into the base substrate. The strain state is altered in a second region of the surface semiconductor layer above the second region of the stressor layer. Semiconductor structures are fabricated using such methods.
    Type: Grant
    Filed: November 6, 2015
    Date of Patent: February 21, 2017
    Assignee: SOITEC
    Inventors: Bich-Yen Nguyen, Walter Schwarzenbach, Christophe Maleville
  • Publication number: 20160372484
    Abstract: A method for manufacturing a high-resistivity semiconductor-on-insulator substrate comprising the steps of: a) forming a dielectric layer and a semiconductor layer over a high-resistivity substrate, such that the dielectric layer is arranged between the high-resistivity substrate and the semiconductor layer; b) forming a hard mask or resist over the semiconductor layer, wherein the hard mask or resist has at least one opening at a predetermined position; c) forming at least one doped region in the high-resistivity substrate by ion implantation of an impurity element through the at least one opening of the hard mask or resist, the semiconductor layer and the dielectric layer; d) removing the hard mask or resist; and e) forming a radiofrequency, RF, circuit in and/or on the semiconductor layer at least partially overlapping the at least one doped region in the high-resistivity substrate.
    Type: Application
    Filed: June 8, 2016
    Publication date: December 22, 2016
    Inventors: Bich-Yen Nguyen, Frederic Allibert, Christophe Maleville
  • Publication number: 20160268430
    Abstract: Methods of forming a semiconductor structure include providing a multi-layer substrate having an epitaxial base layer overlying a strained primary semiconductor layer above a buried oxide layer. Elements within the epitaxial base layer are used to alter a strain state in the primary semiconductor layer within a first region of the multi-layer substrate without altering a strain state in the primary semiconductor layer within a second region of the multi-layer substrate. A first plurality of transistor channel structures are formed that each comprise a portion of the primary semiconductor layer within the first region of the multi-layer substrate, and a second plurality of transistor channel structures are formed that each comprise a portion of the primary semiconductor layer within the second region of the multi-layer substrate. Semiconductor structures fabricated by such methods may include transistor channel structures having differing strain states.
    Type: Application
    Filed: May 23, 2016
    Publication date: September 15, 2016
    Inventors: Bich-Yen Nguyen, Mariam Sadaka, Christophe Maleville
  • Patent number: 9349865
    Abstract: Methods of forming a semiconductor structure include providing a multi-layer substrate having an epitaxial base layer overlying a strained primary semiconductor layer above a buried oxide layer. Elements within the epitaxial base layer are used to alter a strain state in the primary semiconductor layer within a first region of the multi-layer substrate without altering a strain state in the primary semiconductor layer within a second region of the multi-layer substrate. A first plurality of transistor channel structures are formed that each comprise a portion of the primary semiconductor layer within the first region of the multi-layer substrate, and a second plurality of transistor channel structures are formed that each comprise a portion of the primary semiconductor layer within the second region of the multi-layer substrate. Semiconductor structures fabricated by such methods may include transistor channel structures having differing strain states.
    Type: Grant
    Filed: November 11, 2015
    Date of Patent: May 24, 2016
    Assignee: SOITEC
    Inventors: Bich-Yen Nguyen, Mariam Sadaka, Christophe Maleville
  • Publication number: 20160087100
    Abstract: Methods of forming a semiconductor structure include providing a multi-layer substrate having an epitaxial base layer overlying a strained primary semiconductor layer above a buried oxide layer. Elements within the epitaxial base layer are used to alter a strain state in the primary semiconductor layer within a first region of the multi-layer substrate without altering a strain state in the primary semiconductor layer within a second region of the multi-layer substrate. A first plurality of transistor channel structures are formed that each comprise a portion of the primary semiconductor layer within the first region of the multi-layer substrate, and a second plurality of transistor channel structures are formed that each comprise a portion of the primary semiconductor layer within the second region of the multi-layer substrate. Semiconductor structures fabricated by such methods may include transistor channel structures having differing strain states.
    Type: Application
    Filed: November 11, 2015
    Publication date: March 24, 2016
    Inventors: Bich-Yen Nguyen, Mariam Sadaka, Christophe Maleville
  • Publication number: 20160086803
    Abstract: Methods of fabricating a semiconductor structure include providing a semiconductor-on-insulator (SOI) substrate including a base substrate, a strained stressor layer above the base substrate, a surface semiconductor layer, and a dielectric layer between the stressor layer and the surface semiconductor layer. Ions are implanted into or through a first region of the stressor layer, and additional semiconductor material is formed on the surface semiconductor layer above the first region of the stressor layer. The strain state in the first region of the surface semiconductor layer above the first region of the stressor layer is altered, and a trench structure is formed at least partially into the base substrate. The strain state is altered in a second region of the surface semiconductor layer above the second region of the stressor layer. Semiconductor structures are fabricated using such methods.
    Type: Application
    Filed: November 6, 2015
    Publication date: March 24, 2016
    Inventors: Bich-Yen Nguyen, Walter Schwarzenbach, Christophe Maleville
  • Patent number: 9219150
    Abstract: Methods of forming a semiconductor structure include providing a multi-layer substrate having an epitaxial base layer overlying a strained primary semiconductor layer above a buried oxide layer. Elements within the epitaxial base layer are used to alter a strain state in the primary semiconductor layer within a first region of the multi-layer substrate without altering a strain state in the primary semiconductor layer within a second region of the multi-layer substrate. A first plurality of transistor channel structures are formed that each comprise a portion of the primary semiconductor layer within the first region of the multi-layer substrate, and a second plurality of transistor channel structures are formed that each comprise a portion of the primary semiconductor layer within the second region of the multi-layer substrate. Semiconductor structures fabricated by such methods may include transistor channel structures having differing strain states.
    Type: Grant
    Filed: September 18, 2014
    Date of Patent: December 22, 2015
    Assignee: SOITEC
    Inventors: Bich-Yen Nguyen, Mariam Sadaka, Christophe Maleville
  • Patent number: 9209301
    Abstract: Methods of fabricating a semiconductor structure include providing a semiconductor-on-insulator (SOI) substrate including a base substrate, a strained stressor layer above the base substrate, a surface semiconductor layer, and a dielectric layer between the stressor layer and the surface semiconductor layer. Ions are implanted into or through a first region of the stressor layer, and additional semiconductor material is formed on the surface semiconductor layer above the first region of the stressor layer. The strain state in the first region of the surface semiconductor layer above the first region of the stressor layer is altered, and a trench structure is formed at least partially into the base substrate. The strain state is altered in a second region of the surface semiconductor layer above the second region of the stressor layer. Semiconductor structures are fabricated using such methods.
    Type: Grant
    Filed: September 18, 2014
    Date of Patent: December 8, 2015
    Assignee: SOITEC
    Inventors: Bich-Yen Nguyen, Walter Schwarzenbach, Christophe Maleville
  • Publication number: 20150221545
    Abstract: A method for producing a high quality useful layer of semiconductor material on a substrate. The method includes implanting at least two different atomic species into a face of a donor substrate to a controlled mean implantation depth to form a weakened zone therein and to define a useful layer. The implanting step is conducted to minimize low-frequency roughness at the weakened zone. Next, the method includes bonding a support substrate to the face of the donor substrate, and detaching the useful layer from the donor substrate along the weakened zone. A structure is thus formed that includes the useful layer on the support substrate with the useful layer presenting a surface for further processing. The technique also includes thermally treating the structure to minimize high-frequency roughness of the surface of the useful layer. The result is a surface having sufficient smoothness so that chemical-mechanical polishing (CMP) is not needed.
    Type: Application
    Filed: February 18, 2015
    Publication date: August 6, 2015
    Inventors: Christophe Maleville, Eric Neyret, Nadia Ben Mohamed
  • Patent number: 8609514
    Abstract: A process for transferring a thin film includes forming a layer of inclusions to create traps for gaseous compounds. The inclusions can be in the form of one or more implanted regions that function as confinement layers configured to trap implanted species. Further, the inclusions can be in the form of one or more layers deposited by a chemical vapor deposition, epitaxial growth, ion sputtering, or a stressed region or layer formed by any of the aforementioned processes. The inclusions can also be a region formed by heat treatment of an initial support or by heat treatment of a layer formed by any of the aforementioned processes, or by etching cavities in a layer. In a subsequent step, gaseous compounds are introduced into the layer of inclusions to form micro-cavities that form a fracture plane along which the thin film can be separated from a remainder of the substrate.
    Type: Grant
    Filed: May 24, 2013
    Date of Patent: December 17, 2013
    Assignee: Commissariat a l'Energie Atomique
    Inventors: Hubert Moriceau, Michel Bruel, Bernard Aspar, Christophe Maleville
  • Publication number: 20130273713
    Abstract: A process for transferring a thin film includes forming a layer of inclusions to create traps for gaseous compounds. The inclusions can be in the form of one or more implanted regions that function as confinement layers configured to trap implanted species. Further, the inclusions can be in the form of one or more layers deposited by a chemical vapor deposition, epitaxial growth, ion sputtering, or a stressed region or layer formed by any of the aforementioned processes. The inclusions can also be a region formed by heat treatment of an initial support or by heat treatment of a layer formed by any of the aforementioned processes, or by etching cavities in a layer. In a subsequent step, gaseous compounds are introduced into the layer of inclusions to form micro-cavities that form a fracture plane along which the thin film can be separated from a remainder of the substrate.
    Type: Application
    Filed: May 24, 2013
    Publication date: October 17, 2013
    Inventors: Hubert MORICEAU, Michel BRUEL, Bernard ASPAR, Christophe MALEVILLE
  • Patent number: 8470712
    Abstract: A process for transferring a thin film includes forming a layer of inclusions to create traps for gaseous compounds. The inclusions can be in the form of one or more implanted regions that function as confinement layers configured to trap implanted species. Further, the inclusions can be in the form of one or more layers deposited by a chemical vapor deposition, epitaxial growth, ion sputtering, or a stressed region or layer formed by any of the aforementioned processes. The inclusions can also be a region formed by heat treatment of an initial support or by heat treatment of a layer formed by any of the aforementioned processes, or by etching cavities in a layer. In a subsequent step, gaseous compounds are introduced into the layer of inclusions to form micro-cavities that form a fracture plane along which the thin film can be separated from a remainder of the substrate.
    Type: Grant
    Filed: December 23, 2010
    Date of Patent: June 25, 2013
    Assignee: Commissariat a l'Energie Atomique
    Inventors: Hubert Moriceau, Michel Bruel, Bernard Aspar, Christophe Maleville
  • Patent number: 8216917
    Abstract: A method for fabricating a substrate of the semiconductor on insulator type by forming an epitaxial layer of semiconducting material on a donor substrate having oxygen precipitates with a density of less than 1010/cm3 or a mean size of less than 500 nm, forming an oxide layer on either a donor or receiver substrate, implanting atomic species in the donor substrate to form a weakened zone in the epitaxial layer, bonding the donor and receiver substrates together, with the oxide layer present at the bonding interface, fracturing the donor substrate in the weakened zone to transfer a layer of the donor substrate to the receiver substrate with the transferred layer including the epitaxial layer, and recycling the remainder of the donor substrate to form a receiver substrate for fabrication of a second semiconductor on insulator type substrate.
    Type: Grant
    Filed: January 29, 2009
    Date of Patent: July 10, 2012
    Assignee: Soitec
    Inventor: Christophe Maleville
  • Patent number: 8058149
    Abstract: A method for fabricating a semiconductor on insulator substrate by providing a first semiconductor substrate with a first impurity density of a first impurity type, subjecting the first semiconductor substrate to a first thermal treatment to thereby reduce the first impurity density in a modified layer adjacent a surface of the first semiconductor substrate being treated, transferring at least partially the modified layer with the reduced first impurity density onto a second substrate, to thereby obtain a modified second substrate, and providing a further layer on a transferred layer of the modified second substrate with the further layer having a second impurity density of a second impurity type that is different than the first impurity type of the transferred modified layer. By doing so, a contamination by dopants of the second impurity type of a fabrication line using semiconductor material with dopants of the first impurity type, can be prevented.
    Type: Grant
    Filed: June 14, 2010
    Date of Patent: November 15, 2011
    Assignee: S.O.I.Tec Silicon on Insulator Technologies
    Inventor: Christophe Maleville
  • Patent number: 7972939
    Abstract: A method for minimizing or avoiding contamination of a receiving handle wafer during transfer of a thin layer from a donor wafer. This method includes providing a donor wafer and a receiving handle wafer, each having a first surface prepared for bonding and a second surface, with the donor wafer providing a layer of material to be transferred to the receiving handle wafer. Next, at least one of the first surfaces is treated to provide increased bonding energy when the first surfaces are bonded together; the surfaces are then bonded together to form an intermediate multilayer structure; and a portion of the donor wafer is removed to transfer the thin layer to the receiving handle wafer and form the semiconductor structure. This method avoids or minimizes contamination of the second surface of the receiving handle wafer by treating only the first surface of the donor wafer prior to bonding by exposure to a plasma, and by conducting any thermal treatments after plasma activation at a temperature of 300┬░ C.
    Type: Grant
    Filed: September 24, 2009
    Date of Patent: July 5, 2011
    Assignee: S.O.I.Tec Silicon on Insulator Technologies
    Inventors: S├ębastien Kerdiles, Christophe Maleville, Fabrice Letertre, Olivier Rayssac
  • Patent number: 7956441
    Abstract: A composite structure that includes front faces of the first and second substrates that are molecularly bonded to each other. The dimensions of the second substrate outline are larger than the first substrate outline, and a peripheral side of the second substrate substantially borders the second front face and is oriented generally perpendicularly with respect thereto. The front faces are molecularly bonded such that the outline of the first front face is disposed at least partially within the outline of the second front face. A peripheral ring extending around the first front face and facing the first substrate, in which bonding between the front faces is weak or absent, has a maximum width of less than about 0.5 mm.
    Type: Grant
    Filed: September 20, 2007
    Date of Patent: June 7, 2011
    Assignee: S.O.I.Tec Silicon on Insulator Technologies
    Inventor: Christophe Maleville