Patents by Inventor Chuanguo Dou

Chuanguo Dou has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • A STRESS SENSOR STRUCTURE AND A MANUFACTURING METHOD THEREOF
    Publication number: 20210223122
    Abstract: The present invention discloses a stress sensor structure and a manufacturing method thereof, wherein the stress sensor structure comprises: a substrate; a blind-hole, provided on a first surface of the substrate; a first piezoresistive layer and a second piezoresistive layer, formed by material with piezoresistive effect, provided on a lateral wall of the blind-hole and interconnected at bottom portions of the layers; a second insulating layer, provided between the first piezoresistive layer and the second piezoresistive layer; a first electrode, provided on the first surface of the substrate and connected to the first piezoresistive layer; a second electrode, provided on the first surface of the substrate and connected to the second piezoresistive layer.
    Type: Application
    Filed: November 24, 2017
    Publication date: July 22, 2021
    Inventors: Wen Yin, Heng Yang, Chuanguo Dou, Wenqi Zhang, Tingyu Lin, Liqiang Cao
  • Stress sensor structure and a manufacturing method thereof
    Patent number: 11067459
    Abstract: The present invention discloses a stress sensor structure and a manufacturing method thereof, wherein the stress sensor structure comprises: a substrate; a blind-hole, provided on a first surface of the substrate; a first piezoresistive layer and a second piezoresistive layer, formed by material with piezoresistive effect, provided on a lateral wall of the blind-hole and interconnected at bottom portions of the layers; a second insulating layer, provided between the first piezoresistive layer and the second piezoresistive layer; a first electrode, provided on the first surface of the substrate and connected to the first piezoresistive layer; a second electrode, provided on the first surface of the substrate and connected to the second piezoresistive layer.
    Type: Grant
    Filed: November 24, 2017
    Date of Patent: July 20, 2021
    Assignee: NATIONAL CENTER FOR ADVANCED PACKAGE
    Inventors: Wen Yin, Heng Yang, Chuanguo Dou, Wenqi Zhang, Tingyu Lin, Liqiang Cao