Abstract: A system and method are provided for electrostatic discharge (ESD) protection circuit having overshoot and undershoot voltage protection during a power supply ramp-up of the circuit. In a specific embodiment, the ESD protection circuit of the present invention includes an ESD discharge circuit coupled between a power supply node and a ground supply node, a trigger circuit coupled to the ESD discharge circuit, the trigger circuit to turn the ESD discharge circuit on in the presence of a voltage spike during the power supply ramp-up and to turn the ESD discharge circuit off in the absence of a voltage spike during the power supply ramp-up, and a delay circuit coupled between the discharge circuit and the trigger circuit, the delay circuit to slow down the turn-off of the discharge circuit to prevent an overshoot or undershoot voltage condition during the power supply ramp-up of the circuit.

Abstract: A process and system for estimating the soft error rate of an integrated circuit. The process involves determining the surface area of and charge stored on each logic node on the integrated circuit. Then a response curve is used to estimate the soft error rate for a logic node using the charge stored on the logic node. Different response curves exist for integrated circuits of different technologies and products. Finally, the soft error rate of the integrated circuit can be estimated using the soft error rates for each logic node.

Abstract: A method and apparatus for clock generation have been disclosed having a selector logic block that controls operation based upon inputs such as analog input(s), digital input(s), a lookup table, and preset value(s), and combinations of such.

Abstract: A method for forming CMOS devices on a semiconductor substrate is disclosed in which gate structures are formed within both the core region and the non-core region of the semiconductor substrate. The gate structures include a gate dielectric layer and a gate film stack that includes a conductive layer and an overlying hard mask. The hard mask is then removed from the gate structures in the non-core region. A salicide process is then performed so as to form a silicide layer in the non-core region. A barrier layer is formed that extends over the core region and a pre-metal dielectric film is formed that extends over the barrier layer. A selective etch process is performed so as to form self-aligned contact openings that extend through the pre-metal dielectric film and through the barrier layer in the core region. These openings are then filled with conductive material to form self-aligned contacts in the core region.

Abstract: A die seal structure for sealing integrated circuit devices formed on a semiconductor substrate. The die seal structure includes a die seal and a junction diode. The die seal only connects to the semiconductor substrate through the junction diode, thereby reducing noise coupling through the die seal. In another aspect of the present invention the die seal structure includes a die seal and a bipolar structure. In this embodiment the die seal only connects to the semiconductor substrate through the bipolar structure.

Abstract: A method and apparatus for a CAM with reduced cross-coupling interference have been disclosed.

Abstract: A method and apparatus for a CAM with reduced cross-coupling interference have been disclosed.

Abstract: A CAM cell array according to embodiments of the present invention include an array of CAM cells, each of the CAM cells comprising a first cell, the first cell including a non-volatile storage element coupled to at least one first data line and a match line; a match line controller coupled to the match line; and a data line controller coupled to the data lines, wherein a write operation is performed by changing a state of the non-volatile storage element by providing data to the at least one data line, wherein a read operation is performed by determining the state of the non-volatile storage element through the at least one data line, and wherein a comparison operation is performed by applying data to the at least one data line and determining a match condition on the match line.

Abstract: A process and system for estimating the occurrence of single event latch-up in an integrated circuit. The process involves determining the resistance between each junction and the closest appropriate tap in a regular shaped well. Each junction occurring in an irregular-shaped well is also identified. Finally, the method may make suggestions for lowering the probability that single event latch-up may occur in the integrated circuit.

Abstract: Capacitive coupling correction circuits are coupled between adjacent parallel dynamic (pre-charged) or static conductors. The capacitive coupling correction circuits effectively isolate a low voltage applied to a first conductor from a high pre-charged voltage stored on an adjacent second conductor (or vice versa). The adjacent parallel conductors can be bit lines of a memory cell. Each capacitive coupling correction circuit can include an inverter having an input terminal coupled to the first conductor, and an output terminal coupled to a first plate of a capacitor. A second plate of the capacitor is coupled to the second conductor. The capacitance of the capacitor is selected to be identical to a parasitic capacitance between the first and second conductors. As a result, there is a zero net voltage effect between the first and second conductors. The capacitive coupling correction circuits may be distributed along the length of the first and second conductors.

Abstract: A charge recycling integrated circuit and a method for integrated circuit charge recycling. In one aspect, a charge storage collector is interposed between a high voltage supply or a low voltage supply and a function block of the integrated circuit. The charge collector is operable to selectively store a charge dissipated in the function block when the logic circuitry of the function block switches between a high voltage value and a low voltage value. The dissipated charge resulting from the switching in the logic circuitry of the function block is selectively stored to the charge collector and the charge collector selectively returns the charge stored on the charge collector to the high voltage supply, the low voltage supply or to another node in the integrated circuit as appropriate.

Abstract: A self-biased electrostatic discharge (ESD) protection circuit for protecting an integrated circuit operating in a normal voltage range that includes both positive and negative voltage levels is disclosed. The self-biased ESD protection circuit includes an input connection for receiving an input voltage, a protection transistor electrically coupled to the input connection, and an electrical sink. The protection transistor is operable to provide ESD protection from the input connection to the electrical sink. The self-biased ESD protection circuit also includes a metal oxide semiconductor (MOS) biasing network electrically coupled to the input connection and the protection transistor. The MOS biasing network is operable to cause the protection transistor to remain in a non-conductive state when the input voltage is in the normal operating voltage range.

Abstract: A process and system for estimating the occurrence of single event latch-up in an integrated circuit. The process involves determining the resistance between each junction and the closest appropriate tap in a regular shaped well. Each junction occurring in an irregular-shaped well is also identified. Finally, the method may make suggestions for lowering the probability that single event latch-up may occur in the integrated circuit.

Abstract: Search engine devices include a content addressable memory (CAM) core having a plurality of CAM array blocks therein and a control circuit. The control circuit, which is electrically coupled to the plurality of CAM array blocks, is configured to perform built-in self repair (BISR) of hard memory defects and/or compare logic defects in the plurality of CAM array blocks concurrently with operations to search entries in the plurality of CAM array blocks.

Abstract: A dual or multi port memory device including a first group of bit lines associated with the first port a second group of bit lines associated with the second port, wherein the bit lines are arranged in different metalization layers and separated horizontally to reduce one or both of stray and coupling capacitance associated with the bit lines. In one exemplary embodiment, the bit lines from each port that are in closer proximity to the bit lines of the other (or another) port are disposed in different metallization layers to reduce coupling capacitance therebetween. One or more further embodiments can include VSS or VDD line(s) located horizontally between the bit lines and metal to substrate contacts for the bit lines can be formed in opposite corners of the memory device to further reduce capacitance.

Abstract: A process and system for estimating the soft error rate of an integrated circuit. The process involves determining the surface area of and charge stored on each logic node on the integrated circuit. Then a response curve is used to estimate the soft error rate for a logic node using the charge stored on the logic node. Different response curves exist for integrated circuits of different technologies and products. Finally, the soft error rate of the integrated circuit can be estimated using the soft error rates for each logic node.

Abstract: A method and apparatus for a CAM with reduced cross-coupling interference have been disclosed.

Abstract: The present invention includes SRAM memory cells and methods for forming SRAM cells having reduced soft error rate. The SRAM cell includes a first NMOS transistor and a first PMOS transistor having a common gate, and a second NMOS transistor and a second PMOS transistor having a common gate. A first resistor is electrically coupled on one end to the drains of the first PMOS transistor and the first NMOS transistor; and is electrically coupled on the other end to the common gate of the second NMOS and second PMOS transistors. A second resistor is electrically coupled on one end to the drains of the second PMOS transistor and the second NMOS transistor; and is electrically coupled on the other end to the common gate of the first NMOS transistor and the first PMOS transistor. The added resistor can be embedded in a contact opening such that it does not take up valuable surface area on the semiconductor substrate. Thereby, data loss from soft errors can be avoided while preserving small memory cell size.

Abstract: A method and apparatus for a CAM with reduced cross-coupling interference have been disclosed.

Abstract: A CAM array including volatile or non-volatile ternary CAM cells that discharge their associated match line through a special discharge line (e.g., a low match line), instead of through the bit line, is disclosed. Each ternary CAM cell includes a pair of storage elements that are used to store a data bit value, a comparison element that is used to compare the stored value with an applied data value, and a discharge element that is coupled between the discharge line and the match line. During operation, when the applied data value matches the stored value, the discharge element de-couples the discharge line from the match line (i.e., a high voltage on the match line remains high). Conversely, when the applied data value does not match the stored value, the discharge elements couple the discharge line to the match line, thereby discharging the match line to the discharge line.