Patents by Inventor Chuen-Horng Tsai
Chuen-Horng Tsai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 7955488Abstract: An electrodeposition process of platinum and platinum-based alloy nano-particles with addition of ethylene glycol is disclosed. An acidic solution which contains metal chloride includes at least one platinum-based chloride and the alloy thereof, and ethylene glycol are introduced into a reactor as an electrodeposition solution. By applying an external negative potential, platinum particles or platinum-based alloy particles are deposited on the substrate. The above acidic solution is able to provide ionic conductivity during electrodeposition. The added ethylene glycol effectively enhances the removal of chlorine from metal chlorides. Meanwhile, ethylene glycol is used as stabilizer to prevent the particles from aggregation onto the substrate, thereby increasing the dispersion of deposited particles.Type: GrantFiled: April 12, 2007Date of Patent: June 7, 2011Assignee: National Tsing Hua UniversityInventors: Ming-Chi Tsai, Chuen-Horng Tsai, Tsung-Kuang Yeh
-
Publication number: 20110111202Abstract: The invention discloses a method and apparatus for transferring nano-carbon material. The nano-carbon material is grown, by chemical vapor deposition, on a catalyst layer provided between a first and a second oxide layer of a multilayer film structure grown on a first substrate through chemical vapor deposition, and then separated from the first substrate by etching away the first and second oxide layers by a wet etching process. The separated nano-carbon material floats on the etchant, and is then pulled up by an etch-resistant continuous conveyance device and transferred to a second substrate. And, in a further imprinting process, large area nano-carbon material can be continuously imprinted onto the second substrate to show a particularly designed pattern.Type: ApplicationFiled: February 11, 2010Publication date: May 12, 2011Applicant: NATIONAL TSING HUA UNIVERSITYInventors: Ching-Yuan Su, Ang-Yu Lu, Zhen-Yu Juang, Keh-Chyang Leou, Chuen-Horng Tsai
-
Publication number: 20110100951Abstract: In a method and apparatus for transferring carbonaceous material layer, a carbonaceous material layer is grown on a growth substrate, and a first continuous conveying unit is used to feed the growth substrate and a transfer material, so that a gluing layer of the transfer material is attached to the carbonaceous material layer on the growth substrate. Then, a transformation device changes a viscosity of the gluing layer for the latter to adhere to the carbonaceous material layer. A second continuous conveying unit is further used to transfer and then separate the mutually adhered transfer material and growth substrate from each other, so that some part of the carbonaceous material layer is transferred onto the gluing layer while other part of the carbonaceous material layer remains on the growth substrate. Thus, at least a one-layer-thickness of the carbonaceous material layer is transferred.Type: ApplicationFiled: February 11, 2010Publication date: May 5, 2011Applicant: NATIONAL TSING HUA UNIVERSITYInventors: Zhen-Yu Juang, Chih-Yu Wu, Ang-Yu Lu, Keh-Chyang Leou, Fu-Rong Chen, Chuen-Horng Tsai
-
Publication number: 20100176001Abstract: The present invention generally relates to an electroplating solution for manufacturing nanometer platinum and platinum based alloy particles and a method thereof. That is, an acid solution having platinum complex compound and citric acid is provided into a reaction tank to be as an electroplating solution, then a plurality of platinum and platinum based alloy particles are deposited on the surfaces of electrodes under the condition of applying negative potentials. The acid solution is capable of effectively providing the rate of conducting ions. The citric acid can effectively promote the dispersity of the platinum and platinum based alloy particles and reduce the dimensions the platinum and platinum based alloy particles.Type: ApplicationFiled: November 27, 2009Publication date: July 15, 2010Applicant: NATIONAL TSING HUA UNIVERSITY (TAIWAN)Inventors: Chuen-Horng Tsai, Ming-Chi Tsai, Tsung-Kuang Yeh
-
Publication number: 20080251390Abstract: An electrodeposition process of platinum and platinum-based alloy nano-particles with addition of ethylene glycol is disclosed. An acidic solution which contains metal chloride includes at least one platinum-based chloride and the alloy thereof, and ethylene glycol are introduced into a reactor as an electrodeposition solution. By applying an external negative potential, platinum particles or platinum-based alloy particles are deposited on the substrate. The above acidic solution is able to provide ionic conductivity during electrodeposition. The added ethylene glycol effectively enhances the removal of chlorine from metal chlorides. Meanwhile, ethylene glycol is used as stabilizer to prevent the particles from aggregation onto the substrate, thereby increasing the dispersion of deposited particles.Type: ApplicationFiled: April 12, 2007Publication date: October 16, 2008Inventors: Ming-Chi Tsai, Chuen-Horng Tsai, Tsung-Kuang Yeh
-
Patent number: 7435954Abstract: An electron microscope suitable for observing at least one sample is provided. The sample has at least one testing area, and a material of the sample on the testing area is semiconductive or conductive. The electron microscope includes a stage, an electron gun, and at least one probe. The stage is suitable for carrying the sample and the sample is not electrically grounded. The electron gun is suitable for generating an electron beam and accumulating charges on the sample. When the probe contacts with the testing area, the image contrast of the testing area will change. The current through the probe will also change upon contact. Methods have been provided based on these principles to determine “when” and “where” the probe starts to contact the sample surface inside an electron microscope.Type: GrantFiled: July 23, 2006Date of Patent: October 14, 2008Assignee: National Central UniversityInventors: Cheng-Hsun Nien, Chuen-Horng Tsai, Kun-Ying Shin, Wen-Bin Jian
-
Publication number: 20080247938Abstract: A process for growing a carbon nanotube directly on a carbon fiber includes at least the steps of depositing a metallic film of at least 1 nm in thickness on at least one surface of a flake-shaped carbon-fiber substrate; placing the substrate into a reactor; introducing a gas including carbon-containing substances into the reactor as a carbon source needed for growing a plurality of carbon nanotubes (CNTs); and thermally cracking the carbon-containing substances in the gas to grow the carbon nanotubes directly on the substrate.Type: ApplicationFiled: April 5, 2007Publication date: October 9, 2008Inventors: Ming-Chi Tsai, Chuen-Horng Tsai, Tsung-Kuang Yeh
-
Publication number: 20070262254Abstract: An electron microscope suitable for observing at least one sample is provided. The sample has at least one testing area, and a material of the sample on the testing area is semiconductive or conductive. The electron microscope includes a stage, an electron gun, and at least one probe. The stage is suitable for carrying the sample and the sample is not electrically grounded. The electron gun is suitable for generating an electron beam and accumulating charges on the sample. When the probe contacts with the testing area, the image contrast of the testing area will change. The current through the probe will also change upon contact. Methods have been provided based on these principles to determine “when” and “where” the probe starts to contact the sample surface inside an electron microscope.Type: ApplicationFiled: July 23, 2006Publication date: November 15, 2007Applicant: NATIONAL CENTRAL UNIVERSITYInventors: Cheng-Hsun Nien, Chuen-Horng Tsai, Kun-Ying Shin, Wen-Bin Jian
-
Patent number: 7226643Abstract: A thermal cracking chemical vapor deposition method for synthesizing a nano-carbon material is provided. The method includes steps of (a) providing a substrate, (b) spreading a catalyst on the substrate, (c) putting the substrate into a reactor, (d) introducing a carbon containing material, and (e) heating the carbon containing material, thereby the carbon containing material being cracked to provide a carbon source for forming the nano-carbon material on the substrate.Type: GrantFiled: January 13, 2003Date of Patent: June 5, 2007Assignee: National Science CouncilInventors: Zhen-Yu Juang, Teng-Fang Kuo, Chuen-Horng Tsai, I-Nan Lin
-
Publication number: 20030138561Abstract: A thermal cracking chemical vapor deposition method for synthesizing a nano-carbon material is provided. The method includes steps of (a) providing a substrate, (b) spreading a catalyst on the substrate, (c) putting the substrate into a reactor, (d) introducing a carbon containing material, and (e) heating the carbon containing material, thereby the carbon containing material being cracked to provide a carbon source for forming the nano-carbon material on the substrate.Type: ApplicationFiled: January 13, 2003Publication date: July 24, 2003Inventors: Zhen-Yu Juang, Teng-Fang Kuo, Chuen-Horng Tsai, I-Nan Lin
-
Patent number: 6493070Abstract: This invention discloses an in-situ monitoring method on the layer uniformity of sputter coatings in a vacuum chamber based on deconvolution of measuring plasma emission spectra. The method of the present invention started from an Ar-normalized Sr intensity distribution derived from deconvoluting the plasma spectra by using Abel inversion method, which was considered as the spatial distribution of the sputtering mass of the source target. The thickness profile on the substrate was then calculated with n-th power of cosine law model. It was observed good agreement between the calculated thickness profile based on spectroscopic measurement and experimental observation. The film uniformity for the same sputter conditions can be monitored by comparing in-situ measurement of Ar-normalized Sr intensity distribution with the standard curve, or by directly calculating thickness distribution on the substrates.Type: GrantFiled: August 22, 2000Date of Patent: December 10, 2002Assignee: Precision Instrument Development Center, National Science CouncilInventors: Cheng-Chung Jaing, Chuen-Horng Tsai, Jyh-Shin Chen, Ming-Hwu Cheng, Ho-Yen Hsiao, Py-Shiun Yeh, Jiann-Shiun Kao
-
Patent number: 6391515Abstract: This invention discloses a manufacturing process for preparing sol-gel optical waveguides comprising the steps of solution preparation, an optical waveguide photoresist module process, and optical waveguide molding and sintering. The solution is prepared by mixing water and alcohol to form an alcoholic solution with a properly adjusted pH value followed by mingling with tetraethylorthosilicate (TEOS) at room temperature. The optical waveguide photoresist module process comprises the steps of soft baking, exposure, development, washing by deionized water, drying by a nitrogen gun, and hard baking. The optical waveguide molding and sintering comprises the steps of spinning, sintering, and photoresist module removal.Type: GrantFiled: May 15, 2000Date of Patent: May 21, 2002Assignees: Industrial Technology Research Institute, National Tsing Hua UniversityInventors: Jung-Chieh Su, Chien-Kang Kao, I-Nan Lin, Chuen-Horng Tsai, Cheng-Chung Chi, Yung-Sheng Liu
-
Patent number: 6383554Abstract: There is provided a process and its system for fabricating plasma with feedback control on plasma density. This process uses a heterodyne millimeter wave interferometer as a sensor to measure the plasma density in the process container and the plasma density that is needed in the plasma fabricating process, and then provides real-time information of the measurements to a digital control device which makes numerical calculations and then drives the RF power generator to change the RF output power so as to enable the plasma density in the plasma fabricating process to be close to the expected plasma density. The conventional operation parameter method is to control air pressure, RF power, gas flow quantity, temperature and so on. However, it does not control the plasma parameter that has the most direct influence on the process. Therefore, this method cannot guarantee that, in the process of fabricating wafers, different batches of wafers will be operated under similar process plasma conditions.Type: GrantFiled: September 5, 2000Date of Patent: May 7, 2002Assignee: National Science CouncilInventors: Cheng-Hung Chang, Keh-Chyang Leou, Chaung Lin, Yi-Mei Yang, Chuen-Horng Tsai, I. G. Chen
-
Patent number: 6150763Abstract: This invention relates to an inductively-coupled high density plasma producing apparatus and a plasma processing equipment having the apparatus. The plasma processing equipment consists of a shape-adjustable coil (antenna), a RF power generator, an impedance matching network, a plasma chamber, a gas supply system, and a vacuum system. The gases for producing plasma are fed into the plasma chamber. The RF power is fed into the coil to produce plasma in the plasma chamber. This invention is characterized by the provision of a shape-adjustable coil, which is used to shape the RF power profile in the plasma chamber such that the plasma density profile (uniformity) can be controlled.Type: GrantFiled: March 11, 1999Date of Patent: November 21, 2000Assignee: Chuen-Horng TsaiInventors: Keh-Chyang Leou, Chai-Hao Chang, Szu-Che Tsai, Tsang-Lang Lin, Chuen-Horng Tsai