Patents by Inventor Chul-Woo Nam
Chul-Woo Nam has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 11929520Abstract: Disclosed herein is a porous separator for electrochemical devices, configured to guarantee electrical insulation between a positive electrode and a negative electrode, wherein the porous separator includes no polyolefin substrate, and includes inorganic particles, a binder for coupling between the inorganic particles, and a crosslinking agent.Type: GrantFiled: April 17, 2019Date of Patent: March 12, 2024Assignee: LG ENERGY SOLUTION, LTD.Inventors: Kyoung Ho Ahn, Kwan Woo Nam, Chul Haeng Lee, Young Duk Kim, Je An Lee
-
Patent number: 10920107Abstract: The invention provides a chemical-mechanical polishing composition comprising an abrasive, a self-stopping agent, an aqueous carrier, and a cationic polymer. This invention additionally provides a method suitable for polishing a dielectric substrate.Type: GrantFiled: February 21, 2020Date of Patent: February 16, 2021Assignee: CMC Materials, Inc.Inventors: Alexander W. Hains, Juyeon Chang, Tina C. Li, Viet Lam, Ji Cui, Sarah Brosnan, Chul Woo Nam
-
Publication number: 20200190361Abstract: The invention provides a chemical-mechanical polishing composition comprising an abrasive, a self-stopping agent, an aqueous carrier, and a cationic polymer. This invention additionally provides a method suitable for polishing a dielectric substrate.Type: ApplicationFiled: February 21, 2020Publication date: June 18, 2020Inventors: Alexander W. Hains, Juyeon Chang, Tina C. Li, Viet Lam, Ji Cui, Sarah Brosnan, Chul Woo Nam
-
Patent number: 10619076Abstract: The invention provides a chemical-mechanical polishing composition comprising an abrasive, a self-stopping agent, an aqueous carrier, and optionally, a cationic polymer, and provides a method suitable for polishing a substrate.Type: GrantFiled: February 8, 2019Date of Patent: April 14, 2020Assignee: Cabot Microelectronics CorporationInventors: Alexander W. Hains, Juyeon Chang, Tina C. Li, Viet Lam, Ji Cui, Sarah Brosnan, Chul Woo Nam
-
Patent number: 10619075Abstract: The invention provides a chemical-mechanical polishing composition comprising an abrasive, a self-stopping agent, an aqueous carrier, and optionally, a cationic polymer, and provides a method suitable for polishing a substrate.Type: GrantFiled: March 23, 2018Date of Patent: April 14, 2020Assignee: Cabot Microelectronics CorporationInventors: Alexander W. Hains, Juyeon Chang, Tina C. Li, Viet Lam, Ji Cui, Sarah Brosnan, Chul Woo Nam
-
Publication number: 20190185716Abstract: The invention provides a chemical-mechanical polishing composition comprising an abrasive, a self-stopping agent, an aqueous carrier, and optionally, a cationic polymer, and provides a method suitable for polishing a substrate.Type: ApplicationFiled: February 8, 2019Publication date: June 20, 2019Inventors: Alexander W. HAINS, Juyeon CHANG, Tina C. LI, Viet LAM, Ji CUI, Sarah BROSNAN, Chul Woo NAM
-
Publication number: 20180244956Abstract: The invention provides a chemical-mechanical polishing composition comprising an abrasive, a self-stopping agent, an aqueous carrier, and optionally, a cationic polymer, and provides a method suitable for polishing a substrate.Type: ApplicationFiled: March 23, 2018Publication date: August 30, 2018Inventors: Alexander W. HAINS, Juyeon CHANG, Tina C. LI, Viet LAM, Ji CUI, Sarah BROSNAN, Chul Woo NAM
-
Patent number: 9416432Abstract: The present invention relates to a leaching method of rare-earth metals using a hydrochloric acid from a manganese nodule, and more particularly, to a leaching method of rare-earth metals using a hydrochloric acid from a manganese nodule, in which a manganese nodule is mixed with a hydrochloric acid, then stirred and heated to leach the rare-earth metal included in the manganese nodule.Type: GrantFiled: January 29, 2015Date of Patent: August 16, 2016Assignee: KOREA INSTITUTE OF GEOSCIENCE AND MINERAL RESOURCESInventors: Jin-Tae Park, Chul-Woo Nam, Kyung-Ho Park, Hyun-Ho Kim
-
Publication number: 20150211095Abstract: The present invention relates to a leaching method of rare-earth metals using a hydrochloric acid from a manganese nodule, and more particularly, to a leaching method of rare-earth metals using a hydrochloric acid from a manganese nodule, in which a manganese nodule is mixed with a hydrochloric acid, then stirred and heated to leach the rare-earth metal included in the manganese nodule.Type: ApplicationFiled: January 29, 2015Publication date: July 30, 2015Inventors: Jin-Tae PARK, Chul-Woo NAM, Kyung-Ho PARK, Hyun-Ho KIM
-
Publication number: 20150147247Abstract: Disclosed is a method of pre-treating molybdenite containing copper. The method includes mixing molybdenite containing copper with sulfuric acid, performing a sulfation reaction through a heating process after the mixing process is performed, performing a water leaching process by putting and stirring water after the sulfation reaction is performed, separating a cake from liquid after the water leaching process is performed, and drying the separated cake.Type: ApplicationFiled: December 13, 2013Publication date: May 28, 2015Applicant: KOREA INSTITUTE OF GEOSCIENCE AND MINERAL RESOURCESInventors: Young-Yoon Choi, Shun-Myung Shin, Chul-Woo Nam, Hyung-Seok Kim
-
Patent number: 8778211Abstract: The present invention provides chemical-mechanical polishing (CMP) compositions suitable for polishing a substrate comprising a germanium-antimony-tellurium (GST) alloy. The CMP compositions of the present invention are aqueous slurries comprising a particulate abrasive, a water-soluble surface active agent, a complexing agent, and a corrosion inhibitor. The ionic character of the surface active material (e.g., cationic, anionic, or nonionic) is selected based on the zeta potential of the particulate abrasive. A CMP method for polishing a GST alloy-containing substrate utilizing the composition is also disclosed.Type: GrantFiled: July 17, 2012Date of Patent: July 15, 2014Assignee: Cabot Microelectronics CorporationInventors: Matthias Stender, Glenn Whitener, Chul Woo Nam
-
Publication number: 20140024216Abstract: The present invention provides chemical-mechanical polishing (CMP) compositions suitable for polishing a substrate comprising a germanium-antimony-tellurium (GST) alloy. The CMP compositions of the present invention are aqueous slurries comprising a particulate abrasive, a water-soluble surface active agent, a complexing agent, and a corrosion inhibitor. The ionic character of the surface active material (e.g., cationic, anionic, or nonionic) is selected based on the zeta potential of the particulate abrasive. A CMP method for polishing a GST alloy-containing substrate utilizing the composition is also disclosed.Type: ApplicationFiled: July 17, 2012Publication date: January 23, 2014Inventors: Matthias STENDER, Glenn WHITENER, Chul Woo NAM
-
Patent number: 8268034Abstract: Provided is a manufacturing method of ferromolybdenum from molybdenite concentrate, and more particularly, a manufacturing method of ferromolybdenum with copper content of 0.5% or less from molybdenite with high copper content without carrying out a separate copper removing process by putting molybdenite, aluminum metal and iron metal, in a heating furnace and reacting them at high temperature to manufacture the ferro molybdenum at the lower portion thereof, forming a slag using aluminum sulfide and iron sulfide as the main components at the upper portion thereof, and putting most of the copper (80 to 95%) existing in the molybdenite in a slag layer. The exemplary embodiment can shorten a process as compared to a metallothermic reduction (Thermit) method of the related art and reduce the consumption of a reducing agent, i.e., aluminum.Type: GrantFiled: October 20, 2010Date of Patent: September 18, 2012Assignee: Korea Institute of Geoscience and Mineral Resources (KIGAM)Inventors: Young Yoon Choi, Sang Bae Kim, Chang Youl Suh, Chul Woo Nam
-
Publication number: 20120174709Abstract: Provided is a manufacturing method of ferromolybdenum from molybdenite concentrate, and more particularly, a manufacturing method of ferromolybdenum with copper content of 0.5% or less from molybdenite with high copper content without carrying out a separate copper removing process by putting molybdenite, aluminum metal and iron metal, in a heating furnace and reacting them at high temperature to manufacture the ferro molybdenum at the lower portion thereof, forming a slag using aluminum sulfide and iron sulfide as the main components at the upper portion thereof, and putting most of the copper (80 to 95%) existing in the molybdenite in a slag layer. The exemplary embodiment can shorten a process as compared to a metallothermic reduction (Thermit) method of the related art and reduce the consumption of a reducing agent, i.e., aluminum.Type: ApplicationFiled: October 20, 2010Publication date: July 12, 2012Applicant: Korea Institute of Geoscience and Mineral Resources (KIGAM)Inventors: Young Yoon Choi, Sang Bae Kim, Chang Youl Suh, Chul Woo Nam
-
Patent number: 8157876Abstract: A wiresaw cutting fluid composition of the present invention comprises about 25 to about 75% by weight of a particulate abrasive suspended in an aqueous carrier containing a polymeric viscosity modifier that comprises a polymer including a majority of non-ionic monomer units (preferably 100 mol % non-ionic monomer units), has a number average molecular weight (Mn) of at least about 5 kDa, and is present in the composition at a concentration sufficient to provide a Brookfield viscosity for the composition in the range of about 50 to about 1000 cP, e.g., 50 to about 700 cP, at about 25° C. at a spindle rotation rate of about 60 rpm. In one embodiment, the viscosity modifier comprises a polymer having a weight average molecular weight (Mw) of at least about 200 kDa. When a viscosity modifier of 200 kDa or greater Mw is utilized, a preferred wiresaw cutting method the cutting fluid is circulated and applied by pumps and nozzles operating at a relatively low shear rate of not more than about 104 s?1.Type: GrantFiled: December 19, 2008Date of Patent: April 17, 2012Assignee: Cabot Microelectronics CorporationInventors: Steven Grumbine, Chul Woo Nam, William Ward, Ramasubramanyam Nagarajan
-
Publication number: 20090126713Abstract: A wiresaw cutting fluid composition of the present invention comprises about 25 to about 75% by weight of a particulate abrasive suspended in an aqueous carrier containing a polymeric viscosity modifier that comprises a polymer including a majority of non-ionic monomer units (preferably 100 mol % non-ionic monomer units), has a number average molecular weight (Mn) of at least about 5 kDa, and is present in the composition at a concentration sufficient to provide a Brookfield viscosity for the composition in the range of about 50 to about 1000 cP, e.g., 50 to about 700 cP, at about 25° C. at a spindle rotation rate of about 60 rpm. In one embodiment, the viscosity modifier comprises a polymer having a weight average molecular weight (Mw) of at least about 200 kDa. When a viscosity modifier of 200 kDa or greater Mw is utilized, a preferred wiresaw cutting method the cutting fluid is circulated and applied by pumps and nozzles operating at a relatively low shear rate of not more than about 104 s?1.Type: ApplicationFiled: December 19, 2008Publication date: May 21, 2009Inventors: Steven Grumbine, Chul Woo Nam, William Ward, Ramasubramanyam Nagarajan
-
Publication number: 20090032006Abstract: This invention provides a method for increasing the cutting performance of a wire saw, in cutting a substrate, by increasing the association of the abrasive particles in the cutting slurry and the cutting wire, the enhancement being caused by the use of thickening agents in the cutting slurry or by increasing the attraction of the abrasive particles to the cutting wire.Type: ApplicationFiled: July 31, 2007Publication date: February 5, 2009Inventors: Chul Woo Nam, Kevin Moeggenborg
-
Patent number: 6663480Abstract: The present invention relates to a polishing pad for the chemical mechanical polishing (CMP). According to the present invention, there is provided a chemical mechanical polishing pad for polishing a semiconductor wafer with chemicals containing predetermined components supplied between the semiconductor wafer and the polishing pad, comprising a base layer; and an abrasive layer which contains polishing abrasives capsulated with a material soluble in the chemicals and is formed to have a constant thickness on the top surface of the base layer. The capsulated polishing abrasives become free abrasives in the chemicals supplied upon polishing, and take part in the polishing. Capsulating the polishing abrasives can be performed by granulization or spraying. According to the polishing pad of the present invention, planarization polishing can be performed as whole. In addition, since a small amount of chemicals are used, it is advantageous in the economic and environmental aspects.Type: GrantFiled: June 12, 2001Date of Patent: December 16, 2003Inventors: Hae-Do Jeong, Ho-Sik Lee, Ho-Youn Kim, Chul-Woo Nam, Sang-Ick Lee, Jae-Hong Kim
-
Publication number: 20030003712Abstract: The present invention discloses methods for fabricating a semiconductor device. A gate electrode having a hard mask layer at its upper portion is formed, and an interlayer insulating film is formed over the resultant structure. A landing plug contact hole is formed by etching the interlayer insulating film, and a conductive layer is formed over the resultant structure, filling up the landing plug contact hole. A first CMP process is performed to expose the hard mask layer, and a second CMP process is preformed to planarize the hard mask layer, the interlayer insulating film and the landing plug conductive layer. The CMP processes of the present invention reduce or prevent dishing of the mask insulating film or contact plug, to reduce or prevent the likelihood of a bridge forming between adjacent conductive plugs. As a result, the semiconductor device has improved properties and/or improved yield.Type: ApplicationFiled: June 27, 2002Publication date: January 2, 2003Applicant: Hynix Semiconductor Inc.Inventors: Pan Ki Kwon, Sang Ick Lee, Chul Woo Nam
-
Publication number: 20020004365Abstract: The present invention relates to a polishing pad for the chemical mechanical polishing (CMP). According to the present invention, there is provided a chemical mechanical polishing pad for polishing a semiconductor wafer with chemicals containing predetermined components supplied between the semiconductor wafer and the polishing pad, comprising a base layer; and an abrasive layer which contains polishing abrasives capsulated with a material soluble in the chemicals and is formed to have a constant thickness on the top surface of the base layer. The capsulated polishing abrasives become free abrasives in the chemicals supplied upon polishing, and take part in the polishing. Capsulating the polishing abrasives can be performed by granulization or spraying. According to the polishing pad of the present invention, planarization polishing can be performed as whole. In addition, since a small amount of chemicals are used, it is advantageous in the economic and environmental aspects.Type: ApplicationFiled: June 12, 2001Publication date: January 10, 2002Inventors: Hae-Do Jeong, Ho-Sik Lee, Ho-Youn Kim, Chul-Woo Nam, Sang-Ick Lee, Jae-Hong Kim