Patents by Inventor Chul-Woo Nam

Chul-Woo Nam has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20190185716
    Abstract: The invention provides a chemical-mechanical polishing composition comprising an abrasive, a self-stopping agent, an aqueous carrier, and optionally, a cationic polymer, and provides a method suitable for polishing a substrate.
    Type: Application
    Filed: February 8, 2019
    Publication date: June 20, 2019
    Inventors: Alexander W. HAINS, Juyeon CHANG, Tina C. LI, Viet LAM, Ji CUI, Sarah BROSNAN, Chul Woo NAM
  • Publication number: 20180244956
    Abstract: The invention provides a chemical-mechanical polishing composition comprising an abrasive, a self-stopping agent, an aqueous carrier, and optionally, a cationic polymer, and provides a method suitable for polishing a substrate.
    Type: Application
    Filed: March 23, 2018
    Publication date: August 30, 2018
    Inventors: Alexander W. HAINS, Juyeon CHANG, Tina C. LI, Viet LAM, Ji CUI, Sarah BROSNAN, Chul Woo NAM
  • Patent number: 9416432
    Abstract: The present invention relates to a leaching method of rare-earth metals using a hydrochloric acid from a manganese nodule, and more particularly, to a leaching method of rare-earth metals using a hydrochloric acid from a manganese nodule, in which a manganese nodule is mixed with a hydrochloric acid, then stirred and heated to leach the rare-earth metal included in the manganese nodule.
    Type: Grant
    Filed: January 29, 2015
    Date of Patent: August 16, 2016
    Assignee: KOREA INSTITUTE OF GEOSCIENCE AND MINERAL RESOURCES
    Inventors: Jin-Tae Park, Chul-Woo Nam, Kyung-Ho Park, Hyun-Ho Kim
  • Publication number: 20150211095
    Abstract: The present invention relates to a leaching method of rare-earth metals using a hydrochloric acid from a manganese nodule, and more particularly, to a leaching method of rare-earth metals using a hydrochloric acid from a manganese nodule, in which a manganese nodule is mixed with a hydrochloric acid, then stirred and heated to leach the rare-earth metal included in the manganese nodule.
    Type: Application
    Filed: January 29, 2015
    Publication date: July 30, 2015
    Inventors: Jin-Tae PARK, Chul-Woo NAM, Kyung-Ho PARK, Hyun-Ho KIM
  • Publication number: 20150147247
    Abstract: Disclosed is a method of pre-treating molybdenite containing copper. The method includes mixing molybdenite containing copper with sulfuric acid, performing a sulfation reaction through a heating process after the mixing process is performed, performing a water leaching process by putting and stirring water after the sulfation reaction is performed, separating a cake from liquid after the water leaching process is performed, and drying the separated cake.
    Type: Application
    Filed: December 13, 2013
    Publication date: May 28, 2015
    Applicant: KOREA INSTITUTE OF GEOSCIENCE AND MINERAL RESOURCES
    Inventors: Young-Yoon Choi, Shun-Myung Shin, Chul-Woo Nam, Hyung-Seok Kim
  • Patent number: 8778211
    Abstract: The present invention provides chemical-mechanical polishing (CMP) compositions suitable for polishing a substrate comprising a germanium-antimony-tellurium (GST) alloy. The CMP compositions of the present invention are aqueous slurries comprising a particulate abrasive, a water-soluble surface active agent, a complexing agent, and a corrosion inhibitor. The ionic character of the surface active material (e.g., cationic, anionic, or nonionic) is selected based on the zeta potential of the particulate abrasive. A CMP method for polishing a GST alloy-containing substrate utilizing the composition is also disclosed.
    Type: Grant
    Filed: July 17, 2012
    Date of Patent: July 15, 2014
    Assignee: Cabot Microelectronics Corporation
    Inventors: Matthias Stender, Glenn Whitener, Chul Woo Nam
  • Publication number: 20140024216
    Abstract: The present invention provides chemical-mechanical polishing (CMP) compositions suitable for polishing a substrate comprising a germanium-antimony-tellurium (GST) alloy. The CMP compositions of the present invention are aqueous slurries comprising a particulate abrasive, a water-soluble surface active agent, a complexing agent, and a corrosion inhibitor. The ionic character of the surface active material (e.g., cationic, anionic, or nonionic) is selected based on the zeta potential of the particulate abrasive. A CMP method for polishing a GST alloy-containing substrate utilizing the composition is also disclosed.
    Type: Application
    Filed: July 17, 2012
    Publication date: January 23, 2014
    Inventors: Matthias STENDER, Glenn WHITENER, Chul Woo NAM
  • Patent number: 8268034
    Abstract: Provided is a manufacturing method of ferromolybdenum from molybdenite concentrate, and more particularly, a manufacturing method of ferromolybdenum with copper content of 0.5% or less from molybdenite with high copper content without carrying out a separate copper removing process by putting molybdenite, aluminum metal and iron metal, in a heating furnace and reacting them at high temperature to manufacture the ferro molybdenum at the lower portion thereof, forming a slag using aluminum sulfide and iron sulfide as the main components at the upper portion thereof, and putting most of the copper (80 to 95%) existing in the molybdenite in a slag layer. The exemplary embodiment can shorten a process as compared to a metallothermic reduction (Thermit) method of the related art and reduce the consumption of a reducing agent, i.e., aluminum.
    Type: Grant
    Filed: October 20, 2010
    Date of Patent: September 18, 2012
    Assignee: Korea Institute of Geoscience and Mineral Resources (KIGAM)
    Inventors: Young Yoon Choi, Sang Bae Kim, Chang Youl Suh, Chul Woo Nam
  • Publication number: 20120174709
    Abstract: Provided is a manufacturing method of ferromolybdenum from molybdenite concentrate, and more particularly, a manufacturing method of ferromolybdenum with copper content of 0.5% or less from molybdenite with high copper content without carrying out a separate copper removing process by putting molybdenite, aluminum metal and iron metal, in a heating furnace and reacting them at high temperature to manufacture the ferro molybdenum at the lower portion thereof, forming a slag using aluminum sulfide and iron sulfide as the main components at the upper portion thereof, and putting most of the copper (80 to 95%) existing in the molybdenite in a slag layer. The exemplary embodiment can shorten a process as compared to a metallothermic reduction (Thermit) method of the related art and reduce the consumption of a reducing agent, i.e., aluminum.
    Type: Application
    Filed: October 20, 2010
    Publication date: July 12, 2012
    Applicant: Korea Institute of Geoscience and Mineral Resources (KIGAM)
    Inventors: Young Yoon Choi, Sang Bae Kim, Chang Youl Suh, Chul Woo Nam
  • Patent number: 8157876
    Abstract: A wiresaw cutting fluid composition of the present invention comprises about 25 to about 75% by weight of a particulate abrasive suspended in an aqueous carrier containing a polymeric viscosity modifier that comprises a polymer including a majority of non-ionic monomer units (preferably 100 mol % non-ionic monomer units), has a number average molecular weight (Mn) of at least about 5 kDa, and is present in the composition at a concentration sufficient to provide a Brookfield viscosity for the composition in the range of about 50 to about 1000 cP, e.g., 50 to about 700 cP, at about 25° C. at a spindle rotation rate of about 60 rpm. In one embodiment, the viscosity modifier comprises a polymer having a weight average molecular weight (Mw) of at least about 200 kDa. When a viscosity modifier of 200 kDa or greater Mw is utilized, a preferred wiresaw cutting method the cutting fluid is circulated and applied by pumps and nozzles operating at a relatively low shear rate of not more than about 104 s?1.
    Type: Grant
    Filed: December 19, 2008
    Date of Patent: April 17, 2012
    Assignee: Cabot Microelectronics Corporation
    Inventors: Steven Grumbine, Chul Woo Nam, William Ward, Ramasubramanyam Nagarajan
  • Publication number: 20090126713
    Abstract: A wiresaw cutting fluid composition of the present invention comprises about 25 to about 75% by weight of a particulate abrasive suspended in an aqueous carrier containing a polymeric viscosity modifier that comprises a polymer including a majority of non-ionic monomer units (preferably 100 mol % non-ionic monomer units), has a number average molecular weight (Mn) of at least about 5 kDa, and is present in the composition at a concentration sufficient to provide a Brookfield viscosity for the composition in the range of about 50 to about 1000 cP, e.g., 50 to about 700 cP, at about 25° C. at a spindle rotation rate of about 60 rpm. In one embodiment, the viscosity modifier comprises a polymer having a weight average molecular weight (Mw) of at least about 200 kDa. When a viscosity modifier of 200 kDa or greater Mw is utilized, a preferred wiresaw cutting method the cutting fluid is circulated and applied by pumps and nozzles operating at a relatively low shear rate of not more than about 104 s?1.
    Type: Application
    Filed: December 19, 2008
    Publication date: May 21, 2009
    Inventors: Steven Grumbine, Chul Woo Nam, William Ward, Ramasubramanyam Nagarajan
  • Publication number: 20090032006
    Abstract: This invention provides a method for increasing the cutting performance of a wire saw, in cutting a substrate, by increasing the association of the abrasive particles in the cutting slurry and the cutting wire, the enhancement being caused by the use of thickening agents in the cutting slurry or by increasing the attraction of the abrasive particles to the cutting wire.
    Type: Application
    Filed: July 31, 2007
    Publication date: February 5, 2009
    Inventors: Chul Woo Nam, Kevin Moeggenborg
  • Patent number: 6663480
    Abstract: The present invention relates to a polishing pad for the chemical mechanical polishing (CMP). According to the present invention, there is provided a chemical mechanical polishing pad for polishing a semiconductor wafer with chemicals containing predetermined components supplied between the semiconductor wafer and the polishing pad, comprising a base layer; and an abrasive layer which contains polishing abrasives capsulated with a material soluble in the chemicals and is formed to have a constant thickness on the top surface of the base layer. The capsulated polishing abrasives become free abrasives in the chemicals supplied upon polishing, and take part in the polishing. Capsulating the polishing abrasives can be performed by granulization or spraying. According to the polishing pad of the present invention, planarization polishing can be performed as whole. In addition, since a small amount of chemicals are used, it is advantageous in the economic and environmental aspects.
    Type: Grant
    Filed: June 12, 2001
    Date of Patent: December 16, 2003
    Inventors: Hae-Do Jeong, Ho-Sik Lee, Ho-Youn Kim, Chul-Woo Nam, Sang-Ick Lee, Jae-Hong Kim
  • Publication number: 20030003712
    Abstract: The present invention discloses methods for fabricating a semiconductor device. A gate electrode having a hard mask layer at its upper portion is formed, and an interlayer insulating film is formed over the resultant structure. A landing plug contact hole is formed by etching the interlayer insulating film, and a conductive layer is formed over the resultant structure, filling up the landing plug contact hole. A first CMP process is performed to expose the hard mask layer, and a second CMP process is preformed to planarize the hard mask layer, the interlayer insulating film and the landing plug conductive layer. The CMP processes of the present invention reduce or prevent dishing of the mask insulating film or contact plug, to reduce or prevent the likelihood of a bridge forming between adjacent conductive plugs. As a result, the semiconductor device has improved properties and/or improved yield.
    Type: Application
    Filed: June 27, 2002
    Publication date: January 2, 2003
    Applicant: Hynix Semiconductor Inc.
    Inventors: Pan Ki Kwon, Sang Ick Lee, Chul Woo Nam
  • Publication number: 20020004365
    Abstract: The present invention relates to a polishing pad for the chemical mechanical polishing (CMP). According to the present invention, there is provided a chemical mechanical polishing pad for polishing a semiconductor wafer with chemicals containing predetermined components supplied between the semiconductor wafer and the polishing pad, comprising a base layer; and an abrasive layer which contains polishing abrasives capsulated with a material soluble in the chemicals and is formed to have a constant thickness on the top surface of the base layer. The capsulated polishing abrasives become free abrasives in the chemicals supplied upon polishing, and take part in the polishing. Capsulating the polishing abrasives can be performed by granulization or spraying. According to the polishing pad of the present invention, planarization polishing can be performed as whole. In addition, since a small amount of chemicals are used, it is advantageous in the economic and environmental aspects.
    Type: Application
    Filed: June 12, 2001
    Publication date: January 10, 2002
    Inventors: Hae-Do Jeong, Ho-Sik Lee, Ho-Youn Kim, Chul-Woo Nam, Sang-Ick Lee, Jae-Hong Kim
  • Patent number: 6051477
    Abstract: A method of fabricating a SOI wafer is disclosed, which comprises the steps of: providing a silicon-on-insulator wafer wherein an oxide is formed between a base substrate and a devise substrate; thinning the device substrate to form a Si layer; etching the Si layer to expose the surface of the oxide film, to form trenches; forming polishing stoppers within the trenches, each polishing stopper have a smaller thickness in its center portion and a greater thickness in its outer portion; heat-treating the polishing stopper; and polishing, via chemical and mechanical polishing, the Si layer using the polishing stopper to form a device formation layer.
    Type: Grant
    Filed: October 22, 1996
    Date of Patent: April 18, 2000
    Assignee: Hyundai Electronics Industries Co., Ltd.
    Inventor: Chul-Woo Nam
  • Patent number: 6032304
    Abstract: A swimming pool is provided that is filled with water containing salt to give buoyancy to a swimmer and to enable the swimmer to effortlessly float. The pool is formed of two or more sections with each section filled with the swimming pool water having differing densities of salt to provide for different buoyancy levels therein. Further, the water in the swimming pool also contains magnesium chloride, calcium sulfate, potassium sulfate and magnesium bromide.
    Type: Grant
    Filed: October 23, 1998
    Date of Patent: March 7, 2000
    Inventor: Chul-woo Nam