Abstract: A display device includes: a light-emitting diode including a first electrode, a second electrode arranged on the first electrode, and an intermediate layer between the first electrode and the second electrode; a bus electrode spaced apart from the first electrode of the light-emitting diode; a bank layer covering an edge of the first electrode and an edge of the bus electrode, and exposing a portion of the first electrode and a portion of the bus electrode; and an insulating pattern layer arranged on the bus electrode, and including a first opening overlapping a first opening, wherein the second electrode contacts the bus electrode through the first opening of the insulating pattern layer.

Abstract: Provided are an organometallic halide compound represented by Formula 1 and having a zero-dimensional non-perovskite structure, and a light-emitting device, an optical member, and an apparatus, each including the organometallic halide compound. The light-emitting device may include a first electrode, a second electrode facing the first electrode, and an emission layer between the first electrode and the second electrode, where the emission layer includes the organometallic halide compound.

Abstract: A light-emitting device and a method of manufacturing the same are provided. The light-emitting device may include a first electrode, a second electrode, and an interlayer located between the first electrode and the second electrode. The interlayer may include an emission layer that includes a first material, a second material, and a third material. The first material may include an inorganic semiconductor compound, an inorganic insulator compound, or any combination thereof. The second material may include a lanthanide metal. The third material may include an organic compound. An apparatus including the light-emitting device is provided.

Abstract: An organic light-emitting device includes an auxiliary layer located between a first electrode and a hole injection layer or a hole transport layer and including a metal fluoride. The metal of the metal fluoride may be a Group III metal having a high work function of 3.8 eV or more. The hole injection barrier at the interface between the first electrode and the hole injection layer may be adjusted by the fluoride of the high work function metal in the auxiliary layer so that the electron-hole charge balance and the efficiency of the organic light-emitting device may be improved.

Abstract: A light-emitting device includes: a first electrode; a second electrode facing the first electrode; light-emitting units in the number of n between the first electrode and the second electrode; and a charge-generation unit(s) in the number of n?1 between the adjacent light-emitting units. The light-emitting units each include an emission layer, and at least one of the charge-generation unit(s) includes an n-type charge-generation layer, a p-type charge-generation layer, and an interlayer between the n-type charge-generation layer and the p-type charge-generation layer.

Abstract: A display device includes: a light-emitting diode including a first electrode, a second electrode arranged on the first electrode, and an intermediate layer between the first electrode and the second electrode; a bus electrode spaced apart from the first electrode of the light-emitting diode; a bank layer covering an edge of the first electrode and an edge of the bus electrode, and exposing a portion of the first electrode and a portion of the bus electrode; and an insulating pattern layer arranged on the bus electrode, and including a first opening overlapping a first opening, wherein the second electrode contacts the bus electrode through the first opening of the insulating pattern layer.

Abstract: A light-emitting device and an electronic apparatus including the same are provided. The light-emitting device includes: a first electrode; a second electrode facing the first electrode; m emission units stacked between the first electrode and the second electrode and including an emission layer; and m?1 charge generation layers each between two neighboring emission units from among the m emission units, wherein m is an integer of 2 or more, at least one of the m emission units includes an inorganic mixed layer between the first electrode and the emission layer, and the inorganic mixed layer includes an inorganic insulating material and an inorganic semiconductor material.

Abstract: A light-emitting device and a method of manufacturing the same are provided. The light-emitting device may include a first electrode, a second electrode, and an interlayer located between the first electrode and the second electrode. The interlayer may include an emission layer that includes a first material, a second material, and a third material. The first material may include an inorganic semiconductor compound, an inorganic insulator compound, or any combination thereof. The second material may include a lanthanide metal. The third material may include an organic compound. An apparatus including the light-emitting device is provided.

Abstract: An organic light-emitting device includes an auxiliary layer located between a first electrode and a hole injection layer or a hole transport layer and including a metal fluoride. The metal of the metal fluoride may be a Group III metal having a high work function of 3.8 eV or more. The hole injection barrier at the interface between the first electrode and the hole injection layer may be adjusted by the fluoride of the high work function metal in the auxiliary layer so that the electron-hole charge balance and the efficiency of the organic light-emitting device may be improved.

Abstract: A light-emitting device includes: a first electrode; a second electrode facing the first electrode; light-emitting units in the number of n between the first electrode and the second electrode; and a charge-generation unit(s) in the number of n-1 between the adjacent light-emitting units. The light-emitting units each include an emission layer, and at least one of the charge-generation unit(s) includes an n-type charge-generation layer, a p-type charge-generation layer, and an interlayer between the n-type charge-generation layer and the p-type charge-generation layer.