Abstract: The present disclosure, in some embodiments, relates to an integrated chip. The integrated chip has an image sensor within a substrate. A first dielectric has an upper surface that extends over a first side of the substrate and over one or more trenches within the first side of the substrate. The one or more trenches laterally surround the image sensor. An internal reflection structure arranged over the upper surface of the first dielectric. The internal reflection structure is configured to reflect radiation exiting from the substrate back into the substrate.

Abstract: In some embodiments, an image sensor is provided. The image sensor includes a photodetector disposed in a semiconductor substrate. A wave guide filter having a substantially planar upper surface is disposed over the photodetector. The wave guide filter includes a light filter disposed in a light filter grid structure. The light filter includes a first material that is translucent and has a first refractive index. The light filter grid structure includes a second material that is translucent and has a second refractive index less than the first refractive index.

Abstract: A BSI image sensor includes a substrate including a front side and a back side opposite to the front side, a pixel sensor disposed in the substrate, an isolation structure surrounding the pixel sensor and disposed in the substrate, a dielectric layer disposed over the pixel sensor on the front side of the substrate, and a plurality of conductive structures disposed in the dielectric layer and arranged to align with the isolation structure.

Abstract: Various embodiments of the present application are directed to a narrow band filter with high transmission and an image sensor comprising the narrow band filter. In some embodiments, the filter comprises a first distributed Bragg reflector (DBR), a second DBR, a defect layer between the first and second DBRs, and a plurality of columnar structures. The columnar structures extend through the defect layer and have a refractive index different than a refractive index of the defect layer. The first and second DBRs define a low transmission band, and the defect layer defines a high transmission band dividing the low transmission band. The columnar structures shift the high transmission band towards lower or higher wavelengths depending upon a refractive index of the columnar structures and a fill factor of the columnar structures.

Abstract: A photo diode includes a pixel unit, a photo conversion layer, and a dielectric layer. The pixel unit includes a pair of pixels. The photo conversion layer is above the pixel unit and has a pair of portions, each of which corresponds to a respective one of the pixels. The dielectric layer is between the portions of the photo conversion layer. A method of manufacturing the photo diode is also disclosed.

Abstract: A BSI image sensor includes a substrate including a front side and a back side opposite to the front side, a pixel sensor disposed in the substrate, an isolation structure surrounding the pixel sensor and disposed in the substrate, a dielectric layer disposed over the pixel sensor on the front side of the substrate, and a plurality of conductive structures disposed in the dielectric layer and arranged to aligned with the isolation structure.

Abstract: In some embodiments, the present disclosure relates to an image sensor integrated chip. The integrated chip has an image sensing element arranged within a substrate. A first dielectric is disposed in one or more trenches within a first side of the substrate. The one or more trenches laterally surround the image sensing element. The substrate includes a recessed portion arranged along the first side of the substrate and defined by second sidewalls of the substrate directly over the image sensing element. The second sidewalls of the substrate are angled to meet at a point disposed along a horizontal plane that intersects the first dielectric within the one or more trenches.

Abstract: A BSI image sensor includes a substrate including a front side and a back side opposite to the front side, a pixel sensor disposed in the substrate, and a color filter disposed over the pixel sensor. The pixel sensor includes a plurality of first micro structures disposed over the back side of the substrate, and the color filter includes a plurality of second micro structures disposed over the back side of the substrate.

Abstract: In some embodiments, the present disclosure relates to an image sensor integrated chip. The integrated chip has an image sensing element arranged within a substrate. A first dielectric is disposed in one or more trenches within a first side of the substrate. The one or more trenches laterally surround the image sensing element. The substrate includes a recessed portion arranged along the first side of the substrate and defined by second sidewalls of the substrate directly over the image sensing element. The second sidewalls of the substrate are angled to meet at a point disposed along a horizontal plane that intersects the first dielectric within the one or more trenches.

Abstract: A photo diode includes a pixel unit, a photo conversion layer, and a dielectric layer. The pixel unit includes a pair of pixels. The photo conversion layer is above the pixel unit and has a pair of portions, each of which corresponds to a respective one of the pixels. The dielectric layer is between the portions of the photo conversion layer. A method of manufacturing the photo diode is also disclosed.

Abstract: An image sensor includes a color filter array and a light receiving element. The color filter array includes plural repeating unit cells including first, second, and third unit cells. The first and second unit cells are adjacent to each other in a first direction, the second and third unit cells are adjacent to each other in a second direction transverse to the first direction. Each of the first, second, and third unit cells includes at least one first yellow filter configured to transmit a green component and a red component of incident light, and each of the first, second, and third unit cells does not comprise a red filter configured to transmit the red component of the incident light. The light receiving element is configured to convert the incident light transmitted by the color filter array into electric signals.

Abstract: In some embodiments, the present disclosure relates to an image sensor integrated chip. The integrated chip has an image sensing element arranged within a pixel region of a substrate. A first dielectric is disposed in trenches within a first side of the substrate. The trenches are defined by first sidewalls disposed on opposing sides of the pixel region. An internal reflection enhancement structure is arranged along the first side of the substrate and is configured to reflect radiation exiting from the substrate back into the substrate.

Abstract: An image sensor includes a color filter array and a light receiving element. The color filter array includes plural repeating unit cells, and at least one of the unit cells includes at least a yellow filter, at least one green filter, and at least one blue filter. The yellow filter is configured to transmit a green component and a red component of incident light. The green filter is configured to transmit the green component of the incident light. The blue filter is configured to transmit a blue component of the incident light. Each of the unit cells does not comprise a red filter configured to transmit the red component of the incident light. The light receiving element is configured to convert the incident light transmitted by the color filter array into electric signals.

Abstract: A BSI image sensor includes a substrate including a front side and a back side opposite to the front side, a pixel sensor disposed in the substrate, an isolation structure surrounding the pixel sensor and disposed in the substrate, a dielectric layer disposed over the pixel sensor on the front side of the substrate, and a plurality of conductive structures disposed in the dielectric layer and arranged to aligned with the isolation structure.

Abstract: A BSI image sensor includes a substrate including a front side and a back side opposite to the front side, a pixel sensor disposed in the substrate, and a color filter disposed over the pixel sensor. The pixel sensor includes a plurality of first micro structures disposed over the back side of the substrate, and the color filter includes a plurality of second micro structures disposed over the back side of the substrate.

Abstract: A photo diode includes a pixel unit, a photo conversion layer, and a dielectric layer. The pixel unit includes a pair of pixels. The photo conversion layer is above the pixel unit and has a pair of portions, each of which corresponds to a respective one of the pixels. The dielectric layer is between the portions of the photo conversion layer. A method of manufacturing the photo diode is also disclosed.

Abstract: Methods for forming an image sensor structure are provided. The method includes forming a light-sensing region in a substrate and forming a storage node adjacent to light-sensing region in the substrate. The method further includes forming a front side isolation structure partially surrounding an upper portion of the light-sensing region and forming a trench fully surrounding a bottom portion of the light-sensing region to expose a bottom surface of the front side isolations structure. The method further includes forming a backside isolation structure in the trench.

Abstract: A BSI image sensor includes a substrate including a front side and a back side opposite to the front side, and a plurality of pixel sensors arranged in an array. Each of the pixel sensors includes a photo-sensing device in the substrate, a color filter over the pixel sensor on the back side, and an optical structure over the color filter on the back side. The optical structure includes a first sidewall, and the first sidewall and a plane substantially parallel with a front surface of the substrate form an included angel greater than 0°.

Abstract: A photo diode includes a pixel unit, a photo conversion layer, and a dielectric layer. The pixel unit includes a pair of pixels. The photo conversion layer is above the pixel unit and has a pair of portions, each of which corresponds to a respective one of the pixels. The dielectric layer is between the portions of the photo conversion layer. A method of manufacturing the photo diode is also disclosed.

Abstract: An image sensor structure and a method for forming the same are provided. The image sensor structure includes a substrate having a front side and a backside and a light-sensing region formed in the substrate. The image sensor structure further includes a front side isolation structure formed at the front side of the substrate and a backside isolation structure formed at the back side of the substrate.