Patents by Inventor Chun-Hsien Huang

Chun-Hsien Huang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11227133
    Abstract: The present invention provides a product label with a colorimetric sensor array and a code, and the system and the method of the present invention are mainly that the product label is attached to a fresh food, so that at least one sensing material of the colorimetric sensor array undergoes a chemical reaction with at least one metabolic molecule of the fresh food to change from an initial color to an indicating color. The present invention, by obtaining an image comprising an appearance, the code and the indicating color of the fresh food through an image acquisition device, also provides an instant information associated with the fresh food by a processing device according to a comparison result of the image and a database.
    Type: Grant
    Filed: November 13, 2020
    Date of Patent: January 18, 2022
    Assignee: TAIWAN CARBON NANO TECHNOLOGY CORPORATION
    Inventors: Ching-Tung Hsu, Chao-Chieh Lin, Yuan-Shin Huang, Chun-Wei Shih, Chia-Hung Li, Chun-Hsien Tsai, Chun-Jung Tsai
  • Patent number: 11219841
    Abstract: The present invention provides a heat exchange device featuring gas-liquid separation, comprising an evaporator unit and a condenser unit. The condenser unit comprises a central main guide tube, a plurality of condensation tubes connected to the two lateral sides of the central main guide tube, and a heat dissipation fin assembly provided on a periphery of each condensation tube. The central main guide tube comprises a gaseous-phase confluence chamber and a liquid-phase confluence chamber. The gaseous-phase confluence chamber is provided in an upper portion of the central main guide tube and communicates with the gas outlet through a gaseous-phase connection tube, and the liquid-phase confluence chamber is provided in a lower portion of the central main guide tube and communicates with the evaporation chamber through a liquid-phase connection tube.
    Type: Grant
    Filed: December 5, 2019
    Date of Patent: January 11, 2022
    Assignee: MAN ZAI INDUSTRIAL CO., LTD.
    Inventors: Cheng-Chien Wan, Cheng-Jui Wan, Chun-Hsien Su, Hui-Fen Huang
  • Patent number: 11217524
    Abstract: The present disclosure provides an interconnect structure, including a first interlayer dielectric layer, a bottom metal line including a first metal in the first interlayer dielectric layer, a conductive via including a second metal over the bottom metal line, wherein the second metal is different from the first metal, and the first metal has a first type of primary crystalline structure, and the second metal has the first type of primary crystalline structure, a total area of a bottom surface of the conductive via is greater than a total cross sectional area of the conductive via, and a top metal line over the conductive via, wherein the top metal line comprises a third metal different from the second metal.
    Type: Grant
    Filed: June 12, 2020
    Date of Patent: January 4, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Shuen-Shin Liang, Ken-Yu Chang, Hung-Yi Huang, Chien Chang, Chi-Hung Chuang, Kai-Yi Chu, Chun-I Tsai, Chun-Hsien Huang, Chih-Wei Chang, Hsu-Kai Chang, Chia-Hung Chu, Keng-Chu Lin, Sung-Li Wang
  • Patent number: 11205644
    Abstract: An electronic package is provided, including: a first substrate having a first insulating portion; a first electronic component disposed on the first substrate; a second substrate having a second insulating portion and stacked on the first substrate through a plurality of conductive elements; and a first encapsulant formed between the first substrate and the second substrate. The first insulating portion of the first substrate differs in rigidity from the second insulating portion of the second substrate. As such, during a high temperature process, one of the first substrate and the second substrate pulls at the other to bend toward the same direction, thereby reducing warpage deviation of the overall electronic package. The present invention further provides a method for fabricating the electronic package.
    Type: Grant
    Filed: March 12, 2020
    Date of Patent: December 21, 2021
    Assignee: Siliconware Precision Industries Co., Ltd.
    Inventors: Chi-Rui Wu, Fu-Tang Huang, Chia-Cheng Chen, Chun-Hsien Lin, Hsuan-Hao Mi, Yu-Cheng Pai
  • Publication number: 20210391252
    Abstract: The present disclosure provides an interconnect structure, including a first interlayer dielectric layer, a bottom metal line including a first metal in the first interlayer dielectric layer, a conductive via including a second metal over the bottom metal line, wherein the second metal is different from the first metal, and the first metal has a first type of primary crystalline structure, and the second metal has the first type of primary crystalline structure, a total area of a bottom surface of the conductive via is greater than a total cross sectional area of the conductive via, and a top metal line over the conductive via, wherein the top metal line comprises a third metal different from the second metal.
    Type: Application
    Filed: June 12, 2020
    Publication date: December 16, 2021
    Inventors: SHUEN-SHIN LIANG, KEN-YU CHANG, HUNG-YI HUANG, CHIEN CHANG, CHI-HUNG CHUANG, KAI-YI CHU, CHUN-I TSAI, CHUN-HSIEN HUANG, CHIH-WEI CHANG, HSU-KAI CHANG, CHIA-HUNG CHU, KENG-CHU LIN, SUNG-LI WANG
  • Publication number: 20210376103
    Abstract: The present disclosure describes a method for forming liner-free or barrier-free conductive structures. The method includes forming a liner-free conductive structure on a cobalt conductive structure disposed on a substrate, depositing a cobalt layer on the liner-free conductive structure and exposing the liner-free conductive structure to a heat treatment. The method further includes removing the cobalt layer from the liner-free conductive structure.
    Type: Application
    Filed: May 29, 2020
    Publication date: December 2, 2021
    Applicant: Taiwan Semiconductor Manufacturing, Co., Ltd.
    Inventors: Shuen-Shin LIANG, Chun-I TSAI, Chih-Wei CHANG, Chun-Hsien HUANG, Hung-Yi HUANG, Keng-Chu LIN, Ken-Yu CHANG, Sung-Li WANG, Chia-Hung CHU, Hsu-Kai CHANG
  • Publication number: 20210367042
    Abstract: Methods of forming contacts for source/drain regions and a contact plug for a gate stack of a finFET device are disclosed herein. Methods include etching a contact opening through a dielectric layer to expose surfaces of a first source/drain contact and repairing silicon oxide structures along sidewall surfaces of the contact opening and along planar surfaces of the dielectric layer to prevent selective loss defects from occurring during a subsequent selective deposition of conductive fill materials and during subsequent etching of other contact openings. The methods further include performing a selective bottom-up deposition of conductive fill material to form a second source/drain contact. According to some of the methods, once the second source/drain contact has been formed, the contact plug may be formed over the gate stack.
    Type: Application
    Filed: August 3, 2021
    Publication date: November 25, 2021
    Inventors: Chun-Hsien Huang, Chang-Ting Chung, Wei-Cheng Lin, Wei-Jung Lin, Chih-Wei Chang
  • Patent number: 11170854
    Abstract: A layout pattern of a two-port ternary content addressable memory (TCAM) includes a first storage unit, a second storage unit, a first comparison circuit and a second comparison circuit. The first comparison circuit and the second comparison circuit are positioned in a first side area of a side and a second side area of another side of the layout pattern, respectively. The first storage unit and the second storage unit are positioned in a first middle area and a second middle area between the first side area and the second side area, respectively. The first storage unit is connected to the first comparison circuit through a first gate structure and connected to the second comparison circuit through a second gate structure. The second storage unit is connected to the first comparison circuit through a third gate structure and connected to the second comparison circuit through a fourth gate structure.
    Type: Grant
    Filed: December 7, 2020
    Date of Patent: November 9, 2021
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Chun-Hsien Huang, Ching-Cheng Lung, Yu-Tse Kuo, Shu-Ru Wang, Chun-Yen Tseng
  • Publication number: 20210335720
    Abstract: The present disclosure describes a method for forming capping layers configured to prevent the migration of out-diffused cobalt atoms into upper metallization layers In some embodiments, the method includes depositing a cobalt diffusion barrier layer on a liner-free conductive structure that includes ruthenium, where depositing the cobalt diffusion barrier layer includes forming the cobalt diffusion barrier layer self-aligned to the liner-free conductive structure. The method also includes depositing, on the cobalt diffusion barrier layer, a stack with an etch stop layer and dielectric layer, and forming an opening in the stack to expose the cobalt diffusion barrier layer. Finally, the method includes forming a conductive structure on the cobalt diffusion barrier layer.
    Type: Application
    Filed: January 5, 2021
    Publication date: October 28, 2021
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Shuen-Shin LIANG, Chun-I TSAI, Chih-Wei CHANG, Chun-Hsien HUANG, Hung-Yi HUANG, Keng-Chu LIN, Ken-Yu CHANG, Sung-Li WANG, Chia-Hung CHU, Hsu-Kai CHANG
  • Publication number: 20210335719
    Abstract: A semiconductor device includes a first dielectric layer disposed over a substrate and a conductive feature, a doped dielectric layer disposed over the first dielectric layer, a first metal portion disposed in the first dielectric layer and in contact with the conductive feature, and a doped metal portion disposed over the first metal portion. The first metal portion and the doped metal portion include a same noble metal material. The doped dielectric layer and the doped metal portion include same dopants. The dopants are bonded to the noble metal material.
    Type: Application
    Filed: February 9, 2021
    Publication date: October 28, 2021
    Inventors: Kuo-Ju Chen, Chun-Hsien Huang, Su-Hao Liu, Liang-Yin Chen, Huicheng Chang, Yee-Chia Yeo
  • Publication number: 20210327818
    Abstract: A connecting structure includes a first dielectric layer disposed over a substrate and a conductive feature, a doped dielectric layer disposed over the first dielectric layer, a first metal portion disposed in the first dielectric layer and in contact with the conductive feature, and a doped metal portion disposed over the first metal portion. The first metal portion and the doped metal portion include a same noble metal material. The doped dielectric layer and the doped metal portion include same dopants.
    Type: Application
    Filed: February 9, 2021
    Publication date: October 21, 2021
    Inventors: Kuo-Ju Chen, Chun-Hsien Huang, Su-Hao Liu, Liang-Yin Chen, Huicheng Chang, Yee-Chia Yeo
  • Publication number: 20210296168
    Abstract: Generally, examples are provided relating to conductive features that include a barrier layer, and to methods thereof. In an embodiment, a metal layer is deposited in an opening through a dielectric layer(s) to a source/drain region. The metal layer is along the source/drain region and along a sidewall of the dielectric layer(s) that at least partially defines the opening. The metal layer is nitrided, which includes performing a multiple plasma process that includes at least one directional-dependent plasma process. A portion of the metal layer remains un-nitrided by the multiple plasma process. A silicide region is formed, which includes reacting the un-nitrided portion of the metal layer with a portion of the source/drain region. A conductive material is disposed in the opening on the nitrided portions of the metal layer.
    Type: Application
    Filed: June 4, 2021
    Publication date: September 23, 2021
    Inventors: Wei-Yip Loh, Chih-Wei Chang, Hong-Mao Lee, Chun-Hsien Huang, Yu-Ming Huang, Yan-Ming Tsai, Yu-Shiuan Wang, Hung-Hsu Chen, Yu-Kai Chen, Yu-Wen Cheng
  • Patent number: 11101353
    Abstract: Methods of forming contacts for source/drain regions and a contact plug for a gate stack of a finFET device are disclosed herein. Methods include etching a contact opening through a dielectric layer to expose surfaces of a first source/drain contact and repairing silicon oxide structures along sidewall surfaces of the contact opening and along planar surfaces of the dielectric layer to prevent selective loss defects from occurring during a subsequent selective deposition of conductive fill materials and during subsequent etching of other contact openings. The methods further include performing a selective bottom-up deposition of conductive fill material to form a second source/drain contact. According to some of the methods, once the second source/drain contact has been formed, the contact plug may be formed over the gate stack.
    Type: Grant
    Filed: April 17, 2019
    Date of Patent: August 24, 2021
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chun-Hsien Huang, Chang-Ting Chung, Wei-Cheng Lin, Wei-Jung Lin, Chih-Wei Chang
  • Patent number: 11031286
    Abstract: Generally, examples are provided relating to conductive features that include a barrier layer, and to methods thereof. In an embodiment, a metal layer is deposited in an opening through a dielectric layer(s) to a source/drain region. The metal layer is along the source/drain region and along a sidewall of the dielectric layer(s) that at least partially defines the opening. The metal layer is nitrided, which includes performing a multiple plasma process that includes at least one directional-dependent plasma process. A portion of the metal layer remains un-nitrided by the multiple plasma process. A silicide region is formed, which includes reacting the un-nitrided portion of the metal layer with a portion of the source/drain region. A conductive material is disposed in the opening on the nitrided portions of the metal layer.
    Type: Grant
    Filed: March 1, 2018
    Date of Patent: June 8, 2021
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Wei-Yip Loh, Chih-Wei Chang, Hong-Mao Lee, Chun-Hsien Huang, Yu-Ming Huang, Yan-Ming Tsai, Yu-Shiuan Wang, Hung-Hsu Chen, Yu-Kai Chen, Yu-Wen Cheng
  • Publication number: 20210118507
    Abstract: A layout pattern of a two-port ternary content addressable memory (TCAM) includes a first storage unit, a second storage unit, a first comparison circuit and a second comparison circuit. The first comparison circuit and the second comparison circuit are positioned in a first side area of a side and a second side area of another side of the layout pattern, respectively. The first storage unit and the second storage unit are positioned in a first middle area and a second middle area between the first side area and the second side area, respectively. The first storage unit is connected to the first comparison circuit through a first gate structure and connected to the second comparison circuit through a second gate structure. The second storage unit is connected to the first comparison circuit through a third gate structure and connected to the second comparison circuit through a fourth gate structure.
    Type: Application
    Filed: December 7, 2020
    Publication date: April 22, 2021
    Inventors: Chun-Hsien Huang, Ching-Cheng Lung, Yu-Tse Kuo, Shu-Ru Wang, Chun-Yen Tseng
  • Patent number: 10978122
    Abstract: A memory includes (n?1) non-volatile cells, (n?1) bit lines and a current driving circuit. Each of the (n?1) non-volatile cells includes a first terminal and a second terminal. An ith bit line of the (n?1) bit lines is coupled to a first terminal of an ith non-volatile cell of the (n?1) non-volatile cells. The current driving circuit includes n first transistors coupled to the (n?1) non-volatile cells.
    Type: Grant
    Filed: February 21, 2020
    Date of Patent: April 13, 2021
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Chun-Yen Tseng, Yu-Tse Kuo, Chang-Hung Chen, Shu-Ru Wang, Ya-Lan Chiou, Chun-Hsien Huang, Chih-Wei Tsai, Hsin-Chih Yu, Yi-Ting Wu, Cheng-Tung Huang, Jen-Yu Wang, Jhen-Siang Wu, Po-Chun Yang, Yung-Ching Hsieh, Jian-Jhong Chen, Bo-Chang Li
  • Patent number: 10957640
    Abstract: A semiconductor structure includes a conductive structure, a dielectric layer, and a plurality of conductive features. The dielectric layer is present on the conductive structure. The dielectric layer has a plurality of through holes therein, and at least one of the through holes exposes the conductive structure. The conductive features are respectively present in the through holes. At least one of the conductive features has a bottom surface and at least one sidewall. The bottom surface and the sidewall of the conductive feature intersect to form an interior angle. The interior angles of adjacent two of the conductive features have a difference less than or substantially equal to about 3 degrees.
    Type: Grant
    Filed: July 1, 2019
    Date of Patent: March 23, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED
    Inventors: Yu-Hung Lin, Chun-Hsien Huang, I-Tseng Chen
  • Patent number: 10892013
    Abstract: A two-port ternary content addressable memory (TCAM) and layout pattern thereof, and associated memory device are provided. The two-port TCAM may include a first storage unit, a second storage unit, a set of first search terminals, a set of second search terminals, a first comparison circuit, a second comparison circuit, a first match terminal and a second match terminal, wherein the first comparison circuit is respectively coupled to the first storage unit, the second storage unit, the set of first search terminals and the first match terminal, and the second comparison circuit is respectively coupled to the first storage unit, the second storage unit, the set of second search terminals and the second match terminal. First search data and second search data may be concurrently inputted into the two-port TCAM for determining whether the first search data and the second search data match content data within the two-port TCAM.
    Type: Grant
    Filed: June 12, 2019
    Date of Patent: January 12, 2021
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Chun-Hsien Huang, Ching-Cheng Lung, Yu-Tse Kuo, Shu-Ru Wang, Chun-Yen Tseng
  • Publication number: 20200395073
    Abstract: A ternary content addressable memory unit includes a first inverter, a second inverter, a third inverter, a fourth inverter, a first transistor, a second transistor, a third transistor, a fourth transistor, a fifth transistor, a sixth transistor, a seventh transistor, and an eighth transistor. The first inverter includes an input terminal, and an output terminal coupled to a first node. The second inverter includes an input terminal coupled to the first node and an output terminal coupled to the input terminal of the first inverter. The third inverter includes an input terminal coupled to a second node and an output terminal. The fourth inverter includes an input terminal coupled to the output terminal of the third inverter and an output terminal coupled to the second node.
    Type: Application
    Filed: July 4, 2019
    Publication date: December 17, 2020
    Inventors: Chun-Yen Tseng, Ching-Cheng Lung, Yu-Tse Kuo, Chun-Hsien Huang, Chih-Wei Tsai, Hsin-Chih Yu, Shu-Ru Wang
  • Patent number: 10861549
    Abstract: A ternary content addressable memory unit includes a first inverter, a second inverter, a third inverter, a fourth inverter, a first transistor, a second transistor, a third transistor, a fourth transistor, a fifth transistor, a sixth transistor, a seventh transistor, and an eighth transistor. The first inverter includes an input terminal, and an output terminal coupled to a first node. The second inverter includes an input terminal coupled to the first node and an output terminal coupled to the input terminal of the first inverter. The third inverter includes an input terminal coupled to a second node and an output terminal. The fourth inverter includes an input terminal coupled to the output terminal of the third inverter and an output terminal coupled to the second node.
    Type: Grant
    Filed: July 4, 2019
    Date of Patent: December 8, 2020
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Chun-Yen Tseng, Ching-Cheng Lung, Yu-Tse Kuo, Chun-Hsien Huang, Chih-Wei Tsai, Hsin-Chih Yu, Shu-Ru Wang