Abstract: A wearable display device includes a wearing device, a fixed frame, a sliding member, a bracket and an optical imaging device. The fixed frame is fixedly connected to the wearing device. The sliding member is slidably coupled to the fixed frame. The bracket is pivotally connected to the sliding member and is interlocked with the sliding member. The optical imaging device is fixedly connected to the bracket for sliding and rotating relative to the fixed frame.

Abstract: A headband adjustment structure includes a rotary adjusting assembly, a wearing unit having an adjustable accommodation space, a cable management module located between the wearing unit and the rotary adjusting assembly for carrying a cable, an adjustment gear set linkably coupled to the cable management module, and a driving rotation shaft set passing through the wearing unit and the cable management module, and linkably coupled to the wearing unit and the adjustment gear set, and coaxially connected to the rotary adjusting assembly. When the rotary adjusting assembly rotates the driving rotation shaft set, the driving rotation shaft set synchronously moves the wearing unit to adjust the adjustable accommodation space, and moves the cable management module through the adjustment gear set. The amount of the movement of the cable management module is different from that of the wearing unit.

Abstract: A head-mounted display apparatus includes a wearing device, a display-source arrangement portion and an optical assembly. The wearing device has a head-wearing portion and a hat brim portion connected to the head-wearing portion. The display-source arrangement portion is connected with the hat brim portion. The optical assembly is movably disposed on the hat brim portion, and arranged between the head-wearing portion and the display-source arrangement portion.

Abstract: A method for fabricating semiconductor device includes the steps of: forming a first magnetic tunneling junction (MTJ) on a substrate; forming a first ultra low-k (ULK) dielectric layer on the first MTJ; performing a first etching process to remove part of the first ULK dielectric layer and forming a damaged layer on the first ULK dielectric layer; and forming a second ULK dielectric layer on the damaged layer.

Abstract: A head-mounted display device includes a wearable device, a display module, a fixing rack and a connecting rod module. The wearable device is used to be placed on a human head. The display module is used to cover human eyes. The fixing rack is fixedly connected to the wearable device. The connecting rod module includes a support arm and a sliding member. The support arm is pivotally connected to the fixing rack. The sliding member is fixedly connected to the display module, and slidably engaged with the support arm and the fixing rack.

Abstract: The present invention provides a method for forming a semiconductor structure. The method including: Firstly, a substrate is provided, a first region and a second region are defined thereon, next, a gate dielectric layer and a work function metal layer are sequentially formed on the substrate within the first region and within the second region. Afterwards, a dielectric layer is formed on the work function metal layer within the second region, a hydrogen gas treatment is then performed on the substrate, and the work function metal layer is removed within the first region.

Abstract: A head-mounted display device includes a wearable device, a display and a linkage device. The wearable device is worn on a human head. The display includes a case for covering a human's eyes and face, and two guide grooves separately formed on the same side of the case. One end of the linkage device is slidably received within the guide grooves, the other end thereof is pivotally connected to the wearable device.

Abstract: The present invention provides a method for forming a semiconductor structure. The method including: Firstly, a substrate is provided, a first region and a second region are defined thereon, next, a gate dielectric layer and a work function metal layer are sequentially formed on the substrate within the first region and within the second region. Afterwards, a dielectric layer is formed on the work function metal layer within the second region, a hydrogen gas treatment is then performed on the substrate, and the work function metal layer is removed within the first region.

Abstract: A head-mounted display device includes a wearable device, a display and a linkage device. The wearable device is worn on a human head. The display includes a case for covering a human's eyes and face, and two guide grooves separately formed on the same side of the case. One end of the linkage device is slidably received within the guide grooves, the other end thereof is pivotally connected to the wearable device.

Abstract: A semiconductor device with reinforced gate spacers and a method of fabricating the same. The semiconductor device includes low-k dielectric gate spacers adjacent to a gate structure. A high-k dielectric material is disposed over an upper surface of the low-k dielectric gate spacers to prevent unnecessary contact between the gate structure and a self-aligned contact structure. The high-k dielectric material may be disposed, if desired, over an upper surface of the gate structure to provide additional isolation of the gate structure from the self-aligned contact structure.

Abstract: A head-mounted display device includes a wearable device, a display mainframe and a pivoting mechanism. The display mainframe includes a cover body and a display-receiving portion connected to one side of the cover body. The cover body is provided with a light transmissive area and an accommodation area in which the light transmissive area is arranged between the accommodation area and the display-receiving portion. The pivoting mechanism is pivotally connected to the wearable device and the display mainframe.

Abstract: A head-mounted display includes a display device, a bonding structure connected to the display device, an adjusting mechanism connected to the bonding structure, and a rotation button connected to the adjusting mechanism. When the rotation button is rotated, the length of the bonding structure is changed by the adjusting mechanism.

Abstract: A method for fabricating semiconductor device is disclosed. A substrate having a first transistor on a first region, a second transistor on a second region, a trench isolation region, a resistor-forming region is provided. A first ILD layer covers the first region, the second region, and the resistor-forming region. A resistor material layer and a capping layer are formed over the first region, the second region, and the resistor-forming region. The capping layer and the resistor material layer are patterned to form a first hard mask pattern above the first and second regions and a second hard mask pattern above the resistor-forming region. The resistor material layer is isotropically etched. A second ILD layer is formed over the substrate. The second ILD layer and the first ILD layer are patterned with a mask and the first hard mask pattern to form a contact opening.

Abstract: A head-mounted display includes a display device, a bonding structure connected to the display device, an adjusting mechanism connected to the bonding structure, and a rotation button connected to the adjusting mechanism. When the rotation button is rotated, the length of the bonding structure is changed by the adjusting mechanism.

Abstract: A semiconductor device includes a first gate line, a second gate line and a first bar-shaped contact structure. The first gate line has a first long axis extending along a first direction. The second gate line is parallel to the first gate line. The first bar-shaped contact structure has a second axis forming an angle substantially greater than 0° and less than 90° with the first long axis.

Abstract: A method for fabricating a semiconductor device is provided including providing a substrate, on which a plurality of elements is formed. A first inter-dielectric layer is formed over the substrate, covering the elements. A first plug structure is formed in the first inter-dielectric layer, including performing a polishing process over the first inter-dielectric layer to have a dishing on top and extending from a sidewall of the first plug structure. A hard mask layer is formed to fill the dishing. A second inter-dielectric layer is formed over the hard mask layer. A second plug structure is formed in the second inter-dielectric layer to electrically contact the first plug structure, wherein the second plug structure has at least an edge portion extending on the hard mask layer.

Abstract: A semiconductor device and a method of forming the same, the semiconductor device includes a fin shaped structure, a gate structure, an epitaxial layer, an interlayer dielectric layer, a first plug and a protection layer. The fin shaped structure is disposed on a substrate, and the gate structure is across the fin shaped structure. The epitaxial layer is disposed in the fin shaped structure, adjacent to the gate structure. The interlayer dielectric layer covers the substrate and the fin shaped structure. The first plug is formed in the interlayer dielectric layer, wherein the first plug is electrically connected to the epitaxial layer. The protection layer is disposed between the first plug and the gate structure.

Abstract: A head-mounted display apparatus includes a housing, a display panel, a lens base, an adjusting ring, and a lens. The display panel is disposed in the housing. The lens base is disposed on the display panel, and includes a first guiding element. The adjusting ring is disposed on the lens base, and includes a second guiding element attached to the first guiding element. The lens is disposed on the adjusting ring. The first guiding element and the second guiding element extend along a spiral path.

Abstract: A method for fabricating semiconductor device is disclosed. A substrate having a first transistor on a first region, a second transistor on a second region, a trench isolation region, a resistor-forming region is provided. A first ILD layer covers the first region, the second region, and the resistor-forming region. A resistor material layer and a capping layer are formed over the first region, the second region, and the resistor-forming region. The capping layer and the resistor material layer are patterned to form a first hard mask pattern above the first and second regions and a second hard mask pattern above the resistor-forming region. The resistor material layer is isotropically etched. A second ILD layer is formed over the substrate. The second ILD layer and the first ILD layer are patterned with a mask and the first hard mask pattern to form a contact opening.

Abstract: A method for fabricating semiconductor device includes the steps of: providing a substrate having at least a gate structure thereon and an interlayer dielectric (ILD) layer surrounding the gate structure, wherein the gate structure comprises a hard mask thereon; forming a dielectric layer on the gate structure and the ILD layer; removing part of the dielectric layer to expose the hard mask and the ILD layer; and performing a surface treatment to form a doped region in the hard mask and the ILD layer.