Patents by Inventor Chung-Cheng Chou

Chung-Cheng Chou has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11757356
    Abstract: A system includes a charge pump system having a plurality of enable signal input terminals and an output terminal, the charge pump system configured to provide an output voltage at the output terminal; and a detection circuit connected to the enable terminals and the output terminal of the charge pump system, the detection circuit configured to compare the charge pump system output voltage to a plurality of predefined input detection voltage levels, and to selectively output a plurality of enable signals to the charge pump system enable signal input terminals in response to the comparison.
    Type: Grant
    Filed: May 5, 2022
    Date of Patent: September 12, 2023
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chung-Cheng Chou, Tien-Yen Wang
  • Patent number: 11735238
    Abstract: A memory device is provided, the memory device includes multiple cells arranged in a matrix of multiple rows and multiple columns. The memory device further includes multiple bit lines each of which is connected to first cells of the multiple cells arranged in a row of the multiple rows. A voltage control circuit is connectable to a selected bit line of the multiple bit lines and includes a voltage detection circuit that detects an instantaneous supply voltage and a voltage source selection circuit connected to the voltage detection circuit. The voltage source selection circuit selects a voltage source from multiple voltage sources based on the detected instantaneous supply voltage. The voltage source selection circuit includes a switch that connects the selected voltage source to the selected bit line to provide a write voltage.
    Type: Grant
    Filed: June 30, 2022
    Date of Patent: August 22, 2023
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chien-An Lai, Chung-Cheng Chou, Yu-Der Chih
  • Patent number: 11735263
    Abstract: A method of operating a memory circuit includes generating a first voltage by a first amplifier circuit of a first driver circuit coupled to a first column of memory cells, and generating a first current in response to the first voltage. The first current includes a first set of leakage currents and a first write current. The method further includes generating, by a tracking circuit, a second set of leakage currents configured to track the first set of leakage currents of the first column of memory cells, and mirroring the first current in a first path with a second current in a second path by a first current mirror. The second current includes the second set of leakage currents and a second write current. The first write current corresponds to the second write current. The first set of leakage currents corresponds to the second set of leakage currents.
    Type: Grant
    Filed: July 22, 2022
    Date of Patent: August 22, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chin-I Su, Chung-Cheng Chou, Yu-Der Chih, Zheng-Jun Lin
  • Publication number: 20230253041
    Abstract: A memory circuit includes a first driver circuit, a memory cell array including a first column of memory cells, a first transistor coupled between the first driver circuit and the memory cell array, a second driver circuit, a first column of tracking cells and a header circuit coupled to the first driver circuit and the second driver circuit. The first transistor is configured to receive a first select signal. The first column of tracking cells is configured to track a leakage current of the first column of memory cells, and is coupled between a first conductive line and a second conductive line, the first conductive line being coupled to the second driver circuit.
    Type: Application
    Filed: April 20, 2023
    Publication date: August 10, 2023
    Inventors: Chin-I SU, Chung-Cheng CHOU, Yu-Der CHIH, Zheng-Jun LIN
  • Patent number: 11715518
    Abstract: In some aspects of the present disclosure, a memory device is disclosed. In some aspects, the memory device includes a first voltage regulator to receive a word line voltage provided to a memory array; a resistor network coupled to the first voltage regulator to provide an inhibit voltage to the memory array, wherein the resistor network comprises a plurality of resistors and wherein each of the resistors are coupled in series to an adjacent one of the plurality of resistors; and a switch network comprising a plurality of switches, wherein each of the switches are coupled to a corresponding one of the plurality of resistors and to the memory array via a second voltage regulator.
    Type: Grant
    Filed: September 9, 2021
    Date of Patent: August 1, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Zheng-Jun Lin, Chin-I Su, Pei-Ling Tseng, Chung-Cheng Chou
  • Patent number: 11712696
    Abstract: A drug screening platform simulating hyperthermic intraperitoneal chemotherapy including a dielectrophoresis system, a microfluidic chip and a heating system is disclosed. The dielectrophoresis system is used to provide a dielectrophoresis force. The microfluidic chip includes a cell culture array and observation module and a drug mixing module. The cell culture array and observation module are used to arrange the cells into a three-dimensional structure through the dielectrophoresis force to construct a three-dimensional tumor microenvironment. The drug mixing module is coupled to the cell culture array and observation module and used to automatically split and mix the inputted drugs and output the drug combinations into the cell culture array and observation module.
    Type: Grant
    Filed: August 5, 2021
    Date of Patent: August 1, 2023
    Assignee: NATIONAL TSING HUA UNIVERSITY
    Inventors: Te-Yu Chao, Yu-Ching Tung, Mao-Chih Hsieh, Yu-Ting Tai, Bing-Ying Ho, Wei-Chia Chang, Sung-Yang Wei, Chang-Hung Hsieh, Chung-Cheng Chou, Jen-Tsan Chi, Long Hsu, Hwan-You Chang, Huang-Ming Philip Chen, Cheng-Hsien Liu
  • Publication number: 20230236929
    Abstract: A semiconductor device includes an error correction code circuit and a register circuit. The error correction code circuit is configured to generate first data according to second data. The register circuit is configured to generate reset information according to a difference between the first data and the second data, for adjusting a memory cell associated with the second data. A method is also disclosed herein.
    Type: Application
    Filed: March 14, 2023
    Publication date: July 27, 2023
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Zheng-Jun LIN, Pei-Ling TSENG, Hsueh-Chih YANG, Chung-Cheng CHOU, Yu-Der CHIH
  • Publication number: 20230207005
    Abstract: A memory device includes RRAM memory cells configured to form a zero-transistor and one-resistor (0T1R) array structure in which access transistors of the RRAM memory cells are bypassed or removed. Alternatively, the access transistors of the RRAM memory cells may be arranged in a parallel structure to reduce associated IR drop and thus enable reduced write voltage operation.
    Type: Application
    Filed: May 31, 2022
    Publication date: June 29, 2023
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Zheng-Jun Lin, Chung-Cheng Chou, Yu-Der Chih
  • Publication number: 20230148861
    Abstract: An optical system and an operating method thereof are disclosed. The optical system includes a light source device, a gaze module and a fundus detection device. The light source device includes a light source module, a light intensity modulation module and a lens module. The light source module is used to emit a therapy light to an eye. The light intensity modulation module is used to modulate an intensity of the therapy light. The lens module is used to control a depth of the therapy light. The gaze module is used to be gazed by the eye to fix a fundus of the eye. The fundus detection device and the light source device are integrated to detect the fundus to obtain a fundus image.
    Type: Application
    Filed: November 10, 2022
    Publication date: May 18, 2023
    Inventors: William WANG, Hsuan-Hao CHAO, Sung-Yang WEI, Chung-Cheng CHOU
  • Publication number: 20230134020
    Abstract: An optical device including a positioning module, a multi-band light-source module, a tracking and locking module, a monitoring module and a control module is disclosed. The positioning module positions eyes according to their characteristics. The multi-band light source module is coupled to the positioning module. After the positioning module positions eyes, the multi-band light-source module emits multi-band light to eyes. The tracking and locking module tracks and locks eyes and provides first information including whether eyes are locked. The monitoring module monitors eyes and provides second information including whether eyes are emitted by the multi-band light for a default time. The control module is coupled to the tracking and locking module, the monitoring module and the multi-band light-source module to generate a control signal according to the first information and the second information to control the multi-band light-source module to continuously or stop emitting the multi-band light to eyes.
    Type: Application
    Filed: October 17, 2022
    Publication date: May 4, 2023
    Inventors: Yun-Hsuan LIN, William WANG, Chung-Cheng CHOU
  • Patent number: 11636896
    Abstract: A memory circuit includes a first driver circuit, a first column of memory cells coupled to the first driver circuit, a first current source, a tracking circuit configured to track a leakage current of the first column of memory cells, and a footer circuit coupled to the first column of memory cells, the first current source and the tracking circuit.
    Type: Grant
    Filed: November 24, 2020
    Date of Patent: April 25, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chin-I Su, Chung-Cheng Chou, Yu-Der Chih, Zheng-Jun Lin
  • Publication number: 20230113903
    Abstract: A memory architecture includes: a plurality of cell arrays each of which comprises a plurality of bit cells, wherein each of bit cells of the plurality of cell arrays uses a respective variable resistance dielectric layer to transition between first and second logic states; and a control logic circuit, coupled to the plurality of cell arrays, and configured to cause a first information bit to be written into respective bit cells of a pair of cell arrays as an original logic state of the first information bit and a logically complementary logic state of the first information bit, wherein the respective variable resistance dielectric layers are formed by using a same recipe of deposition equipment and have different diameters.
    Type: Application
    Filed: December 13, 2022
    Publication date: April 13, 2023
    Inventors: Yu-Der CHIH, Chung-Cheng Chou, Wen-Ting Chu
  • Publication number: 20230107649
    Abstract: An automatic eye test device and an automatic eye test method are disclosed. The automatic eye test device includes an automatic positioning module, an automatic test module and an automatic analysis module. The automatic positioning module is configured to automatically complete positioning of an eye of a person to be tested. The automatic test module is coupled to the positioning module and configured to automatically test the eye of the person to be tested to obtain a test result. The automatic analysis module is coupled to the automatic test module and configured to automatically analyze the test result to provide a personalized test suggestion for the person to be tested.
    Type: Application
    Filed: July 27, 2022
    Publication date: April 6, 2023
    Inventors: William WANG, Chung-Ping CHUANG, Chun Nan LIN, Chung-Cheng CHOU
  • Patent number: 11609815
    Abstract: A semiconductor device includes a memory circuit, an error correction code circuit, a register circuit and a write circuit. The memory circuit is configured to output, in response to at least one address signal, first data associated with at least one memory cell in the memory circuit. The error correction code circuit is configured to convert the first data to second data and configured to generate error information when the first data is not identical to the second data. The register circuit is configured to output, based on the error information, reset information corresponding to the at least one address signal. The write circuit is configured to reset the at least one memory cell according to the reset information. A method is also disclosed herein.
    Type: Grant
    Filed: August 30, 2021
    Date of Patent: March 21, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Zheng-Jun Lin, Pei-Ling Tseng, Hsueh-Chih Yang, Chung-Cheng Chou, Yu-Der Chih
  • Patent number: 11609185
    Abstract: A portable ring-type fluorescence optical system for observing microfluidic channel and an operating method thereof are disclosed. The portable ring-type fluorescence optical system includes a photographic chip, a first polarizer, an objective lens, a ring-type fluorescent light source, a biological sample on a microfluidic chip, a second polarizer and a bottom illumination light source arranged in order from top to bottom. The ring-type fluorescent light source is used to generate a ring-type fluorescent light to the biological sample on the microfluidic chip. The objective lens is used to magnify a fluorescent image of the biological sample on the microfluidic chip to focus on the photographic chip. The first polarizer disposed under the photographic chip and the second polarizer disposed under the biological sample form a non-zero angle to each other to block reflected lights that the biological sample reflects the lights emitted by the bottom illumination light source.
    Type: Grant
    Filed: August 9, 2021
    Date of Patent: March 21, 2023
    Assignee: NATIONAL TSING HUA UNIVERSITY
    Inventors: Sung-Yang Wei, Long Hsu, Hwan-You Chang, Huang-Ming Chen, Jen-Tsan Chi, Chung-Cheng Chou, Yuh-Cherng Lai, Hung-Yu Yeh, Ting-Chou Wei, Yun-Ting Yao, Cheng-Hsien Liu
  • Publication number: 20230072287
    Abstract: A resistive random-access memory (RRAM) circuit includes an RRAM device configured to output a cell current responsive to a bit line voltage, and a current limiter including an input terminal coupled to the RRAM device, first and second parallel current paths configured to conduct the cell current between the input terminal and a reference voltage node, and an amplifier configured to generate a first signal responsive to a voltage level at the input terminal and a reference voltage level. Each of the first and second current paths includes a switching device configured to selectively conduct a portion of the cell current responsive to the first signal.
    Type: Application
    Filed: November 10, 2022
    Publication date: March 9, 2023
    Inventors: Chung-Cheng CHOU, Zheng-Jun LIN, Pei-Ling TSENG
  • Publication number: 20230063758
    Abstract: A semiconductor device includes a memory circuit, an error correction code circuit, a register circuit and a write circuit. The memory circuit is configured to output, in response to at least one address signal, first data associated with at least one memory cell in the memory circuit. The error correction code circuit is configured to convert the first data to second data and configured to generate error information when the first data is not identical to the second data. The register circuit is configured to output, based on the error information, reset information corresponding to the at least one address signal. The write circuit is configured to reset the at least one memory cell according to the reset information. A method is also disclosed herein.
    Type: Application
    Filed: August 30, 2021
    Publication date: March 2, 2023
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Zheng-Jun LIN, Pei-Ling TSENG, Hsueh-Chih YANG, Chung-Cheng CHOU, Yu-Der CHIH
  • Publication number: 20230065104
    Abstract: The disclosed invention presents a self-tracking reference circuit that compensates for IR drops and achieves the target resistance state at different temperatures after write operations. The disclosed self-tracking reference circuit includes a replica access path, a configurable resistor network, a replica selector mini-array and a step current generator that track PVT variations to provide a PVT tracking level for RRAM verify operation.
    Type: Application
    Filed: November 7, 2022
    Publication date: March 2, 2023
    Inventors: Zheng-Jun Lin, Chung-Cheng Chou, Yu-Der Chih, Pei-Ling Tseng
  • Patent number: 11557344
    Abstract: A memory architecture includes: a plurality of cell arrays each of which comprises a plurality of bit cells, wherein each of bit cells of the plurality of cell arrays uses a respective variable resistance dielectric layer to transition between first and second logic states; and a control logic circuit, coupled to the plurality of cell arrays, and configured to cause a first information bit to be written into respective bit cells of a pair of cell arrays as an original logic state of the first information bit and a logically complementary logic state of the first information bit, wherein the respective variable resistance dielectric layers are formed by using a same recipe of deposition equipment and have different diameters.
    Type: Grant
    Filed: May 25, 2021
    Date of Patent: January 17, 2023
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Yu-Der Chih, Chung-Cheng Chou, Wen-Ting Chu
  • Patent number: 11545215
    Abstract: A method for writing to a memory is disclosed. The method includes generating a write current that flows to a memory cell of the memory, generating a mirror current that mirrors the write current, and inhibiting application of a write voltage to the memory cell of the memory based on the mirror current. A device that performs the method is also disclosed. A memory that includes the device is also disclosed.
    Type: Grant
    Filed: September 24, 2020
    Date of Patent: January 3, 2023
    Assignee: Taiwan Semiconductor Manufacturing Company Limited
    Inventor: Chung-Cheng Chou