Patents by Inventor Chung-Fu Chang
Chung-Fu Chang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240339331Abstract: A method for fabricating a semiconductor device includes the steps of first providing a substrate comprising a medium-voltage (MV) region and a low-voltage (LV) region, forming a first gate structure and a second gate structure on the MV region and a second gate structure on the LV region, forming a patterned mask on the MV region as the patterned mask covers the first gate structure and the second gate structure and exposes the substrate between the first gate structure and the second gate structure, and then forming a first epitaxial layer between the first gate structure and the second gate structure.Type: ApplicationFiled: May 4, 2023Publication date: October 10, 2024Applicant: UNITED MICROELECTRONICS CORP.Inventors: Chung-Fu Chang, Guang-Yu Lo, Chun-Tsen Lu
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Publication number: 20240313046Abstract: A method for fabricating a semiconductor device includes the steps of forming a fin-shaped structure on a substrate, forming a first trench and a second trench in the fin-shaped structure, forming a first dielectric layer in the first trench and the second trench, removing part of the first dielectric layer, forming a second dielectric layer in the first trench and the second trench to form a first single diffusion break (SDB) structure and a second SDB structure, and then forming a gate structure on the fin-shaped structure, the first SDB structure, and the second SDB structure.Type: ApplicationFiled: April 13, 2023Publication date: September 19, 2024Applicant: UNITED MICROELECTRONICS CORP.Inventors: Guang-Yu Lo, Chun-Tsen Lu, Chung-Fu Chang, Chih-Shan Wu, Yu-Hsiang Lin, Wei-Hao Chang
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Publication number: 20240282843Abstract: A method for fabricating semiconductor device includes the steps of: forming a fin-shaped structure on a substrate; forming a gate dielectric layer on the fin-shaped structure; forming a gate electrode on the fin-shaped structure; performing a nitridation process to implant ions into the gate dielectric layer adjacent to two sides of the gate electrode; and forming an epitaxial layer adjacent to two sides of the gate electrode.Type: ApplicationFiled: May 2, 2024Publication date: August 22, 2024Applicant: UNITED MICROELECTRONICS CORP.Inventors: Chung-Fu Chang, Kuan-Hung Chen, Guang-Yu Lo, Chun-Chia Chen, Chun-Tsen Lu
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Patent number: 12009409Abstract: A method for fabricating semiconductor device includes the steps of: forming a fin-shaped structure on a substrate; forming a gate dielectric layer on the fin-shaped structure; forming a gate electrode on the fin-shaped structure; performing a nitridation process to implant ions into the gate dielectric layer adjacent to two sides of the gate electrode; and forming an epitaxial layer adjacent to two sides of the gate electrode.Type: GrantFiled: March 6, 2023Date of Patent: June 11, 2024Assignee: UNITED MICROELECTRONICS CORP.Inventors: Chung-Fu Chang, Kuan-Hung Chen, Guang-Yu Lo, Chun-Chia Chen, Chun-Tsen Lu
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Publication number: 20230207668Abstract: A method for fabricating semiconductor device includes the steps of: forming a fin-shaped structure on a substrate; forming a gate dielectric layer on the fin-shaped structure; forming a gate electrode on the fin-shaped structure; performing a nitridation process to implant ions into the gate dielectric layer adjacent to two sides of the gate electrode; and forming an epitaxial layer adjacent to two sides of the gate electrode.Type: ApplicationFiled: March 6, 2023Publication date: June 29, 2023Applicant: UNITED MICROELECTRONICS CORP.Inventors: Chung-Fu Chang, Kuan-Hung Chen, Guang-Yu Lo, Chun-Chia Chen, Chun-Tsen Lu
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Publication number: 20230207669Abstract: A method for fabricating semiconductor device includes the steps of: forming a fin-shaped structure on a substrate; forming a gate dielectric layer on the fin-shaped structure; forming a gate electrode on the fin-shaped structure; performing a nitridation process to implant ions into the gate dielectric layer adjacent to two sides of the gate electrode; and forming an epitaxial layer adjacent to two sides of the gate electrode.Type: ApplicationFiled: March 7, 2023Publication date: June 29, 2023Applicant: UNITED MICROELECTRONICS CORP.Inventors: Chung-Fu Chang, Kuan-Hung Chen, Guang-Yu Lo, Chun-Chia Chen, Chun-Tsen Lu
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Patent number: 11631753Abstract: A method for fabricating semiconductor device includes the steps of: forming a fin-shaped structure on a substrate; forming a gate dielectric layer on the fin-shaped structure; forming a gate electrode on the fin-shaped structure; performing a nitridation process to implant ions into the gate dielectric layer adjacent to two sides of the gate electrode; and forming an epitaxial layer adjacent to two sides of the gate electrode.Type: GrantFiled: February 22, 2019Date of Patent: April 18, 2023Assignee: UNITED MICROELECTRONICS CORP.Inventors: Chung-Fu Chang, Kuan-Hung Chen, Guang-Yu Lo, Chun-Chia Chen, Chun-Tsen Lu
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Publication number: 20220133575Abstract: An exercise machine which provides back-and-forth movement and vibration is revealed. The exercise machine includes a base and a loading platform in which two sides of a middle portion thereof are pivotally connected to the base. A motor, a first transmission device, and a second transmission device are mounted in the base. The motor drives the first transmission device which further drives the second transmission device. The second transmission device which is connected to the loading platform drives the loading platform to move back and forth while the first transmission device makes the base to have vibration. Thereby the exercise machine generates vibration and back-and-forth movement, allowing users to experience both motions.Type: ApplicationFiled: October 30, 2020Publication date: May 5, 2022Inventor: Chung-Fu Chang
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Patent number: 11145733Abstract: The present invention discloses a method for forming a semiconductor device with a reduced silicon horn structure. After a pad nitride layer is removed from a substrate, a hard mask layer is conformally deposited over the substrate. The hard mask layer is then etched and trimmed to completely remove a portion of the hard mask layer from an active area and a portion of the hard mask layer from an oblique sidewall of a protruding portion of a trench isolation region around the active area. The active area is then etched to form a recessed region. A gate dielectric layer is formed in the recessed region and a gate electrode layer is formed on the gate dielectric layer.Type: GrantFiled: September 27, 2020Date of Patent: October 12, 2021Assignee: UNITED MICROELECTRONICS CORP.Inventors: Chin-Hung Chen, Chih-Kai Hsu, Ssu-I Fu, Chia-Jung Hsu, Chun-Ya Chiu, Yu-Hsiang Lin, Po-Wen Su, Chung-Fu Chang, Guang-Yu Lo, Chun-Tsen Lu
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Patent number: 10994457Abstract: A method for manufacturing a massage wear-resistant treadmill deck and a finished product thereof are provided. The method includes step 1: providing a mold, the mold having a plurality of cavities thereon, a wear-resistant material being injected into the cavities of the mold; step 2: placing a deck in the mold so that the wear-resistant material is bonded to a surface of the deck to form a plurality of massage protrusions on the deck; and step 3: demoulding the deck from the mold, the surface of the deck being formed with the massage protrusions to form the massage wear-resistant treadmill deck. A wear-resistant layer having the massage protrusions is first formed in the mold, and then the deck is placed into the mold to bond with the wear-resistant layer to form the massage wear-resistant treadmill deck. The manufacturing cost is reduced and the manufacturing mobility is improved.Type: GrantFiled: April 11, 2018Date of Patent: May 4, 2021Inventor: Chung-Fu Chang
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Patent number: 10930517Abstract: A fin-shaped structure includes a substrate having a first fin-shaped structure located in a first area and a second fin-shaped structure located in a second area, wherein the second fin-shaped structure includes a ladder-shaped cross-sectional profile part. The present invention also provides two methods of forming this fin-shaped structure. In one case, a substrate having a first fin-shaped structure and a second fin-shaped structure is provided. A treatment process is performed to modify an external surface of the top of the second fin-shaped structure, thereby forming a modified part. A removing process is performed to remove the modified part through a high removing selectivity to the first fin-shaped structure and the second fin-shaped structure, and the modified part, thereby the second fin-shaped structure having a ladder-shaped cross-sectional profile part is formed.Type: GrantFiled: August 6, 2019Date of Patent: February 23, 2021Assignee: UNITED MICROELECTRONICS CORP.Inventors: Wen-Jiun Shen, Ssu-I Fu, Yen-Liang Wu, Chia-Jong Liu, Yu-Hsiang Hung, Chung-Fu Chang, Man-Ling Lu, Yi-Wei Chen
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Patent number: 10799748Abstract: An interacting exercise device is revealed. The interacting exercise device includes a driving device and a non-concentric actuator driven by the driving device. While the driving device is operated to rotate, the non-concentric actuator vibrates and the vibration generated is delivered to the interacting exercise device for interacting shaking fitness.Type: GrantFiled: November 15, 2018Date of Patent: October 13, 2020Inventor: Chung-Fu Chang
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Publication number: 20200235227Abstract: A method for fabricating semiconductor device includes the steps of: forming a fin-shaped structure on a substrate; forming a gate dielectric layer on the fin-shaped structure; forming a gate electrode on the fin-shaped structure; performing a nitridation process to implant ions into the gate dielectric layer adjacent to two sides of the gate electrode; and forming an epitaxial layer adjacent to two sides of the gate electrode.Type: ApplicationFiled: February 22, 2019Publication date: July 23, 2020Inventors: Chung-Fu Chang, Kuan-Hung Chen, Guang-Yu Lo, Chun-Chia Chen, Chun-Tsen Lu
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Patent number: 10668323Abstract: A pedaling vibrational apparatus includes a seat body, a pedal assembly, a gear plate assembly, a drive assembly and an eccentric assembly, like a lever structure. By treading the pedal assembly, the gear plate assembly drives the drive assembly to rotate. The drive assembly is connected with the eccentric assembly. A user can fully exercise muscles of the user's body during exercise, and a vibrational effect generated by the eccentric assembly can stimulate acupuncture points of the user's body to improve blood circulation. Left and right pedals of the pedal assembly can be treaded in turn to continuously drive a gear to rotate in a same direction so as to achieve an effect of acceleration and to enhance vibrations.Type: GrantFiled: January 2, 2018Date of Patent: June 2, 2020Inventor: Chung-Fu Chang
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Patent number: 10653913Abstract: A stepping exercise machine includes a base and a pedal. The base is provided with an undulating slide rail. A top end of the slide rail is defined as a peak. Bottom ends of two sides of the peak are defined as troughs. The two sides of the peak or the bottom ends of the troughs are provided with stop blocks, respectively. An underside of the pedal is pivotally connected with rollers. Two sides of the underside of the pedal are fixedly connected with a pair of stretchable elastic members. The other ends of the pair of stretchable elastic members are fixed to two sides of the base. The rollers support and drive the pedal to reciprocate along the undulating slide rail ups and downs by means of the stretchable elastic members.Type: GrantFiled: July 7, 2017Date of Patent: May 19, 2020Inventor: Chung-Fu Chang
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Patent number: 10529856Abstract: A method of forming a semiconductor device is provided. At least one stacked structure is provided on a substrate. A first spacer material layer, a second spacer material layer, and a third spacer material layer are sequentially formed on the substrate and cover the stacked structure. The first, second, and third spacer material layers are etched to form a tri-layer spacer structure on the sidewall of the stacked structure. The tri-layer spacer structure includes, from one side of the stacked structure, a first spacer, a second spacer, and a third spacer, and a dielectric constant of the second spacer is less than each of a dielectric constant of the first spacer and a dielectric constant of the third spacer.Type: GrantFiled: July 5, 2018Date of Patent: January 7, 2020Assignee: United Microelectronics Corp.Inventors: Man-Ling Lu, Yu-Hsiang Hung, Chung-Fu Chang, Yen-Liang Wu, Wen-Jiun Shen, Chia-Jong Liu, Ssu-I Fu, Yi-Wei Chen
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Publication number: 20190362981Abstract: A fin-shaped structure includes a substrate having a first fin-shaped structure located in a first area and a second fin-shaped structure located in a second area, wherein the second fin-shaped structure includes a ladder-shaped cross-sectional profile part. The present invention also provides two methods of forming this fin-shaped structure. In one case, a substrate having a first fin-shaped structure and a second fin-shaped structure is provided. A treatment process is performed to modify an external surface of the top of the second fin-shaped structure, thereby forming a modified part. A removing process is performed to remove the modified part through a high removing selectivity to the first fin-shaped structure and the second fin-shaped structure, and the modified part, thereby the second fin-shaped structure having a ladder-shaped cross-sectional profile part is formed.Type: ApplicationFiled: August 6, 2019Publication date: November 28, 2019Inventors: Wen-Jiun Shen, Ssu-I Fu, Yen-Liang Wu, Chia-Jong Liu, Yu-Hsiang Hung, Chung-Fu Chang, Man-Ling Lu, Yi-Wei Chen
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Patent number: 10418251Abstract: A fin-shaped structure includes a substrate having a first fin-shaped structure located in a first area and a second fin-shaped structure located in a second area, wherein the second fin-shaped structure includes a ladder-shaped cross-sectional profile part. The present invention also provides two methods of forming this fin-shaped structure. In one case, a substrate having a first fin-shaped structure and a second fin-shaped structure is provided. A treatment process is performed to modify an external surface of the top of the second fin-shaped structure, thereby forming a modified part. A removing process is performed to remove the modified part through a high removing selectivity to the first fin-shaped structure and the second fin-shaped structure, and the modified part, thereby the second fin-shaped structure having a ladder-shaped cross-sectional profile part is formed.Type: GrantFiled: August 29, 2017Date of Patent: September 17, 2019Assignee: UNITED MICROELECTRONICS CORP.Inventors: Wen-Jiun Shen, Ssu-I Fu, Yen-Liang Wu, Chia-Jong Liu, Yu-Hsiang Hung, Chung-Fu Chang, Man-Ling Lu, Yi-Wei Chen
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Publication number: 20190201732Abstract: A belt pulling exercise apparatus includes an adjusting belt, having a first ladder lock disposed thereon, and one end of the adjusting belt is passed through a first ring; two connecting belts, two first ends of the two connecting belts are fastened to the first ring simultaneously, two second ends of each connecting belts opposite to the first ends are respectively fastened to a third ring, and two second rings are respectively fastened to an upper surface of each connecting belt between the first end and the second end; two elastic rope assemblies, each elastic rope assembly is arranged corresponding to each connecting belt, and two ends of each elastic rope assembly are respectively connected to the second ring and the third ring of each corresponding connecting belt; and two hand grips, each hand grip is arranged at each corresponding connecting belt and each corresponding elastic rope assembly.Type: ApplicationFiled: January 2, 2018Publication date: July 4, 2019Inventor: Chung-Fu Chang
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Publication number: 20190201741Abstract: A pedal-type vibrational apparatus includes a seat body, a pedal assembly, a gear plate assembly, a drive assembly and an eccentric assembly, like a lever structure. By treading the pedal assembly, the gear plate assembly drives the drive assembly to rotate. The drive assembly is connected with the eccentric assembly. The user can fully exercise the muscles of the body during exercise, and the vibrational effect generated by the eccentric assembly can stimulate the acupuncture points of the body to improve the blood circulation. The left and right pedals can be treaded in turn to continuously drive a gear to rotate in the same direction so as to achieve the effect of acceleration and to enhance vibrations.Type: ApplicationFiled: January 2, 2018Publication date: July 4, 2019Inventor: Chung-Fu Chang