Abstract: A system includes a laser source operable to provide a laser beam, a laser amplifier having a gain medium operable to provide energy to the laser beam when the laser beam passes through the laser amplifier, and a residual gain monitor operable to provide a probe beam and operable to derive a residual gain of the laser amplifier from the probe beam when the probe beam passes through the laser amplifier while being offset from the laser beam in time or in path.

Abstract: A method for generating EUV light includes providing a laser beam having a Gaussian distribution. This laser beam can be then modified from a Gaussian distribution to a ring-like distribution. The modified laser beam is provided through an aperture in a collector and interfaces with a moving droplet target, which generates an extreme ultraviolet (EUV) wavelength light. The generated EUV wavelength light is provided to the collector away from the aperture. In some embodiments, a mask element may also be used to modify the laser beam to a shape.

Abstract: A wheel rim includes a body unit, angularly spaced-apart fastening units, and sealing units corresponding respectively in position to the fastening units. The body unit includes spokes and a peripheral wall surrounding the spokes and having radially opposite inner and outer surfaces. Each fastening unit includes a fastening member that extends through the peripheral wall and into a respective one of the spokes for fastening the same, and that has a head disposed outwardly of the outer peripheral wall, and a gasket that is clamped between the head and the outer surface and that is sleeved on the fastening member. For each fastening unit, the respective sealing unit includes an outer sealing layer adhered on an outer face of the fastening member and the outer surface for covering the head and the gasket, and an inner sealing layer adhered on and clamped between the outer surface and the gasket.

Abstract: A method for fabricating semiconductor device includes the steps of: forming a fin-shaped structure on a substrate; forming a gate dielectric layer on the fin-shaped structure; forming a gate electrode on the fin-shaped structure; performing a nitridation process to implant ions into the gate dielectric layer adjacent to two sides of the gate electrode; and forming an epitaxial layer adjacent to two sides of the gate electrode.

Abstract: A wheel rim includes a rim body, two flanges and two reinforcing structures. The rim body surrounds an axis and is made of carbon fiber composite material. The flanges protrude radially and outwardly from an outer peripheral surface of the rim body, spaced apart from each other along the axis, are made of carbon fiber composite material, and define respectively two spaces therein. The reinforcing structures are respectively received in the spaces, and each of the reinforcing structures includes a plurality of fiber bundles fixed in a respective one of the flanges. Each of the fiber bundles includes at least two strands of carbon fibers being twisted.

Abstract: The present disclosure provides a method for aligning a master oscillator power amplifier (MOPA) system. The method includes ramping up a pumping power input into a laser amplifier chain of the MOPA system until the pumping power input reaches an operational pumping power input level; adjusting a seed laser power output of a seed laser of the MOPA system until the seed laser power output is at a first level below an operational seed laser power output level; and performing a first optical alignment process to the MOPA system while the pumping power input is at the operational pumping power input level, the seed laser power output is at the first level, and the MOPA system reaches a steady operational thermal state.

Abstract: A method for fabricating semiconductor device includes the steps of: forming a fin-shaped structure on a substrate; forming a gate dielectric layer on the fin-shaped structure; forming a gate electrode on the fin-shaped structure; performing a nitridation process to implant ions into the gate dielectric layer adjacent to two sides of the gate electrode; and forming an epitaxial layer adjacent to two sides of the gate electrode.

Abstract: A method for fabricating semiconductor device includes the steps of: forming a fin-shaped structure on a substrate; forming a gate dielectric layer on the fin-shaped structure; forming a gate electrode on the fin-shaped structure; performing a nitridation process to implant ions into the gate dielectric layer adjacent to two sides of the gate electrode; and forming an epitaxial layer adjacent to two sides of the gate electrode.

Abstract: An exercise machine which provides back-and-forth movement and vibration is revealed. The exercise machine includes a base and a loading platform in which two sides of a middle portion thereof are pivotally connected to the base. A motor, a first transmission device, and a second transmission device are mounted in the base. The motor drives the first transmission device which further drives the second transmission device. The second transmission device which is connected to the loading platform drives the loading platform to move back and forth while the first transmission device makes the base to have vibration. Thereby the exercise machine generates vibration and back-and-forth movement, allowing users to experience both motions.

Abstract: The present invention discloses a method for forming a semiconductor device with a reduced silicon horn structure. After a pad nitride layer is removed from a substrate, a hard mask layer is conformally deposited over the substrate. The hard mask layer is then etched and trimmed to completely remove a portion of the hard mask layer from an active area and a portion of the hard mask layer from an oblique sidewall of a protruding portion of a trench isolation region around the active area. The active area is then etched to form a recessed region. A gate dielectric layer is formed in the recessed region and a gate electrode layer is formed on the gate dielectric layer.

Abstract: A method for manufacturing a massage wear-resistant treadmill deck and a finished product thereof are provided. The method includes step 1: providing a mold, the mold having a plurality of cavities thereon, a wear-resistant material being injected into the cavities of the mold; step 2: placing a deck in the mold so that the wear-resistant material is bonded to a surface of the deck to form a plurality of massage protrusions on the deck; and step 3: demoulding the deck from the mold, the surface of the deck being formed with the massage protrusions to form the massage wear-resistant treadmill deck. A wear-resistant layer having the massage protrusions is first formed in the mold, and then the deck is placed into the mold to bond with the wear-resistant layer to form the massage wear-resistant treadmill deck. The manufacturing cost is reduced and the manufacturing mobility is improved.

Abstract: A fin-shaped structure includes a substrate having a first fin-shaped structure located in a first area and a second fin-shaped structure located in a second area, wherein the second fin-shaped structure includes a ladder-shaped cross-sectional profile part. The present invention also provides two methods of forming this fin-shaped structure. In one case, a substrate having a first fin-shaped structure and a second fin-shaped structure is provided. A treatment process is performed to modify an external surface of the top of the second fin-shaped structure, thereby forming a modified part. A removing process is performed to remove the modified part through a high removing selectivity to the first fin-shaped structure and the second fin-shaped structure, and the modified part, thereby the second fin-shaped structure having a ladder-shaped cross-sectional profile part is formed.

Abstract: An interacting exercise device is revealed. The interacting exercise device includes a driving device and a non-concentric actuator driven by the driving device. While the driving device is operated to rotate, the non-concentric actuator vibrates and the vibration generated is delivered to the interacting exercise device for interacting shaking fitness.

Abstract: A method for fabricating semiconductor device includes the steps of: forming a fin-shaped structure on a substrate; forming a gate dielectric layer on the fin-shaped structure; forming a gate electrode on the fin-shaped structure; performing a nitridation process to implant ions into the gate dielectric layer adjacent to two sides of the gate electrode; and forming an epitaxial layer adjacent to two sides of the gate electrode.

Abstract: A pedaling vibrational apparatus includes a seat body, a pedal assembly, a gear plate assembly, a drive assembly and an eccentric assembly, like a lever structure. By treading the pedal assembly, the gear plate assembly drives the drive assembly to rotate. The drive assembly is connected with the eccentric assembly. A user can fully exercise muscles of the user's body during exercise, and a vibrational effect generated by the eccentric assembly can stimulate acupuncture points of the user's body to improve blood circulation. Left and right pedals of the pedal assembly can be treaded in turn to continuously drive a gear to rotate in a same direction so as to achieve an effect of acceleration and to enhance vibrations.

Abstract: A stepping exercise machine includes a base and a pedal. The base is provided with an undulating slide rail. A top end of the slide rail is defined as a peak. Bottom ends of two sides of the peak are defined as troughs. The two sides of the peak or the bottom ends of the troughs are provided with stop blocks, respectively. An underside of the pedal is pivotally connected with rollers. Two sides of the underside of the pedal are fixedly connected with a pair of stretchable elastic members. The other ends of the pair of stretchable elastic members are fixed to two sides of the base. The rollers support and drive the pedal to reciprocate along the undulating slide rail ups and downs by means of the stretchable elastic members.

Abstract: A method of forming a semiconductor device is provided. At least one stacked structure is provided on a substrate. A first spacer material layer, a second spacer material layer, and a third spacer material layer are sequentially formed on the substrate and cover the stacked structure. The first, second, and third spacer material layers are etched to form a tri-layer spacer structure on the sidewall of the stacked structure. The tri-layer spacer structure includes, from one side of the stacked structure, a first spacer, a second spacer, and a third spacer, and a dielectric constant of the second spacer is less than each of a dielectric constant of the first spacer and a dielectric constant of the third spacer.

Abstract: A fin-shaped structure includes a substrate having a first fin-shaped structure located in a first area and a second fin-shaped structure located in a second area, wherein the second fin-shaped structure includes a ladder-shaped cross-sectional profile part. The present invention also provides two methods of forming this fin-shaped structure. In one case, a substrate having a first fin-shaped structure and a second fin-shaped structure is provided. A treatment process is performed to modify an external surface of the top of the second fin-shaped structure, thereby forming a modified part. A removing process is performed to remove the modified part through a high removing selectivity to the first fin-shaped structure and the second fin-shaped structure, and the modified part, thereby the second fin-shaped structure having a ladder-shaped cross-sectional profile part is formed.

Abstract: A fin-shaped structure includes a substrate having a first fin-shaped structure located in a first area and a second fin-shaped structure located in a second area, wherein the second fin-shaped structure includes a ladder-shaped cross-sectional profile part. The present invention also provides two methods of forming this fin-shaped structure. In one case, a substrate having a first fin-shaped structure and a second fin-shaped structure is provided. A treatment process is performed to modify an external surface of the top of the second fin-shaped structure, thereby forming a modified part. A removing process is performed to remove the modified part through a high removing selectivity to the first fin-shaped structure and the second fin-shaped structure, and the modified part, thereby the second fin-shaped structure having a ladder-shaped cross-sectional profile part is formed.

Abstract: A belt pulling exercise apparatus includes an adjusting belt, having a first ladder lock disposed thereon, and one end of the adjusting belt is passed through a first ring; two connecting belts, two first ends of the two connecting belts are fastened to the first ring simultaneously, two second ends of each connecting belts opposite to the first ends are respectively fastened to a third ring, and two second rings are respectively fastened to an upper surface of each connecting belt between the first end and the second end; two elastic rope assemblies, each elastic rope assembly is arranged corresponding to each connecting belt, and two ends of each elastic rope assembly are respectively connected to the second ring and the third ring of each corresponding connecting belt; and two hand grips, each hand grip is arranged at each corresponding connecting belt and each corresponding elastic rope assembly.