Patents by Inventor Chung-Han Chen

Chung-Han Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240105849
    Abstract: A method for forming a semiconductor structure is provided. The method for forming the semiconductor structure includes forming a fin structure over a substrate in a first direction, forming a first gate stack, a second gate stack and a third gate stack across the fin structure, removing the first gate stack to form a trench, depositing a cutting structure in the trench, and forming a first contact plug between the cutting structure and the second gate stack and a second contact plug between the second gate stack and the third gate stack. The fin structure is cut into two segments by the trench. A first dimension of the first contact plug in the first direction is greater than a second dimension of the second contact plug in the first direction.
    Type: Application
    Filed: February 10, 2023
    Publication date: March 28, 2024
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Da-Zhi ZHANG, Chun-An LU, Chung-Yu CHIANG, Po-Nien CHEN, Hsiao-Han LIU, Jhon-Jhy LIAW, Chih-Yung LIN
  • Publication number: 20240105521
    Abstract: A method for forming a semiconductor device structure is provided. The method includes providing a substrate having a base, a first fin, and a second fin over the base. The method includes forming a first trench in the base and between the first fin and the second fin. The method includes forming an isolation layer over the base and in the first trench. The first fin and the second fin are partially in the isolation layer. The method includes forming a first gate stack over the first fin and the isolation layer. The method includes forming a second gate stack over the second fin and the isolation layer. The method includes removing a bottom portion of the base. The isolation layer passes through the base after the bottom portion of the base is removed.
    Type: Application
    Filed: February 9, 2023
    Publication date: March 28, 2024
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Da-Zhi ZHANG, Chung-Pin HUANG, Po-Nien CHEN, Hsiao-Han LIU, Jhon-Jhy LIAW, Chih-Yung LIN
  • Publication number: 20110120763
    Abstract: The present invention is a film for prevention of electromagnetic interference and transmission of wireless signals. A conductive lamination is integrally attached to a preset position of a substrate and shaped as a film and a signal transceiver. The method of forming the film includes selecting a substrate and selecting a signal transmitting and receiving mode and a form of the conductive surface according to a specific need. A film-shaped signal transceiver and conductive lamination are integrally formed on a preset area of the substrate. By plating and/or coating, the present invention can form a conductive lamination on the substrate with both functions as a signal transceiver and a shield.
    Type: Application
    Filed: November 21, 2009
    Publication date: May 26, 2011
    Applicant: PARAGON TECHNOLOGIES Co., Ltd.
    Inventors: Pi-Hsi Cheng, Chung-Han Chen, Chun-Yang Li, Mao-Liang Tien