Abstract: An image sensor, a mobile device, and an image sensor operation method for reducing a data transmission latency are disclosed. The image sensor includes an interface circuit configured to receive compressed data from an external processor, at least one memory configured to store the compressed data, and a control logic circuit configured to decompress the compressed data based on an initialized first clock rate, wherein, after the control logic circuit decompresses the compressed data, the first clock rate is reset to a second clock rate.

Abstract: A semiconductor device includes a substrate; an active region extending in a first direction on the substrate; a gate structure extending in a second direction on the substrate and including a gate electrode; a source/drain region provided on the active region on at least one side of the gate structure; an interlayer insulating layer covering the gate structure; a first contact structure connected to the source/drain region on at least one side of the gate structure; and a gate contact structure passing at least partially through the interlayer insulating layer and connected to the gate electrode, wherein the gate contact structure includes: a first layer including a conductive material; a second layer provided on the first layer, spaced apart from the interlayer insulating layer by the first layer, and including first impurities; and a third layer provided on the second layer and including second impurities.

Abstract: Provided is a security code. The security code including a first region and a second region includes a metal layer, a first dielectric pattern provided on the metal layer in the first region, a polymer pattern provided on the metal layer in the second region, a first metal pattern provided on the dielectric pattern, and a second metal pattern provided on the polymer pattern, wherein the polymer pattern includes a material different from that of the first dielectric pattern, and a thickness of the polymer pattern is different from a thickness of the first dielectric pattern.

Abstract: A semiconductor device includes a substrate that includes an active pattern, a channel pattern and a source/drain pattern on the active pattern, a gate electrode on the channel pattern, an active contact electrically connected to the source/drain pattern, and a gate contact electrically connected to the gate electrode. The active contact includes a first barrier pattern, a first seed pattern on the first barrier pattern, a first fill pattern on the first seed pattern, and a first metal-containing pattern between the first seed pattern and the first fill pattern. The first metal-containing pattern includes tungsten nitride. A nitrogen concentration of the first metal-containing pattern decreases in a direction toward the substrate.

Abstract: An operating method of a system-on-chip includes outputting a prefetch command in response to an update of mapping information on a first read target address, the update occurring in a first translation lookaside buffer storing first mapping information of a second address with respect to a first address, and storing, in response to the prefetch command, in a second translation lookaside buffer, second mapping information of a third address with respect to at least some second addresses of an address block including a second read target address.

Abstract: A semiconductor device includes a substrate having an active pattern therein, a gate electrode extending across the active pattern and a source/drain region on the active pattern laterally adjacent the gate electrode. The device further includes a contact structure including a first contact on the source/drain region, a second contact on the first contact and a spacer on sidewalls of the first and second contacts.

Abstract: An operating method of a system-on-chip includes outputting a prefetch command in response to an update of mapping information on a first read target address, the update occurring in a first translation lookaside buffer storing first mapping information of a second address with respect to a first address, and storing, in response to the prefetch command, in a second translation lookaside buffer, second mapping information of a third address with respect to at least some second addresses of an address block including a second read target address.

Abstract: A light emitting diode transfer method includes bonding a rigid substrate on which a plurality of light emitting diodes are formed and a flexible substrate, transferring the plurality of light emitting diodes to the flexible substrate, and detaching the rigid substrate and the flexible substrate. The detaching of the rigid substrate and the flexible substrate includes separating the rigid substrate and the flexible substrate in a state in which one surface of the rigid substrate is fixed and a portion among outermost portions of the flexible substrate is fixed by a fixing member. Accordingly, it is possible to reduce transfer defects of the plurality of light emitting diodes by detaching the flexible substrate and the rigid substrate in a line-by-line separation method.

Abstract: A semiconductor device includes a substrate having an active pattern therein, a gate electrode extending across the active pattern and a source/drain region on the active pattern laterally adjacent the gate electrode. The device further includes a contact structure including a first contact on the source/drain region, a second contact on the first contact and a spacer on sidewalls of the first and second contacts.

Abstract: A semiconductor device includes a substrate having an active pattern therein, a gate electrode extending across the active pattern and a source/drain region on the active pattern laterally adjacent the gate electrode. The device further includes a contact structure including a first contact on the source/drain region, a second contact on the first contact and a spacer on sidewalls of the first and second contacts.

Abstract: A three-dimensional flash memory device is described that may include a substrate, a plurality of cell gate patterns and a plurality of mold insulating layers alternately stacked on the substrate, and a vertical channel structure in contact with side surfaces of the plurality of cell gate patterns and side surfaces of the plurality of mold insulating layers. Each of the plurality of cell gate patterns may include a cell gate electrode and a blocking barrier pattern adjacently disposed on one side surface of the cell gate electrode. An inner side surface of the blocking barrier pattern may include an upper inner side surface, a middle inner side surface, and a lower inner side surface. The middle inner side surface of the blocking barrier pattern may face the one side surface of the cell gate electrode.

Abstract: A three-dimensional (3D) image can be rendered by selectively transmitting a left-eye image and a right-eye image from a display panel in a manner of forming a transmitting electrode and a blocking electrode of the same layer on a switching parallax barrier and selectively applying a voltage to the transmitting electrode and the blocking electrode.

Abstract: A method of setting light sources in a display panel for optical fingerprint recognition is provided. The method includes driving a portion of light sources disposed to correspond to a fingerprint recognition window which is a partial region of a display panel based on initial light source setting values, obtaining initial calibration data based on reflected light of an object received by a fingerprint recognition sensor through the fingerprint recognition window while driving the portion of the light sources; and determining final light source setting values such that powers for driving light sources of different colors among the portion of the light sources are different, the final light source setting values being determined to minimize contrast of an interference signal included in the initial calibration data.

Abstract: Disclosed are a display device and a method of manufacturing a display device. The method of a display device according to an exemplary embodiment of the present disclosure includes: a first transferring step of transferring a plurality of LEDs disposed on a wafer onto a plurality of donors; and a second transferring step of transferring the plurality of LEDs transferred onto the plurality of donors onto a display panel, in which in the second transferring step, an area where one of the plurality of donors overlaps the display panel partially overlaps an area where the other one of the plurality of donors overlaps the display panel. Therefore, the plurality of LEDs having different wavelengths is uniformly transferred to reduce a boundary caused by the difference in wavelengths and improve color uniformity.

Abstract: A three-dimensional flash memory device is described that may include a substrate, a plurality of cell gate patterns and a plurality of mold insulating layers alternately stacked on the substrate, and a vertical channel structure in contact with side surfaces of the plurality of cell gate patterns and side surfaces of the plurality of mold insulating layers. Each of the plurality of cell gate patterns may include a cell gate electrode and a blocking barrier pattern adjacently disposed on one side surface of the cell gate electrode. An inner side surface of the blocking barrier pattern may include an upper inner side surface, a middle inner side surface, and a lower inner side surface. The middle inner side surface of the blocking barrier pattern may face the one side surface of the cell gate electrode.

Abstract: A method of setting light sources in a display panel for optical fingerprint recognition is provided. The method includes driving a portion of light sources disposed to correspond to a fingerprint recognition window which is a partial region of a display panel based on initial light source setting values, obtaining initial calibration data based on reflected light of an object received by a fingerprint recognition sensor through the fingerprint recognition window while driving the portion of the light sources; and determining final light source setting values such that powers for driving light sources of different colors among the portion of the light sources are different, the final light source setting values being determined to minimize contrast of an interference signal included in the initial calibration data.

Abstract: A semiconductor device includes a substrate having an active pattern therein, a gate electrode extending across the active pattern and a source/drain region on the active pattern laterally adjacent the gate electrode. The device further includes a contact structure including a first contact on the source/drain region, a second contact on the first contact and a spacer on sidewalls of the first and second contacts.

Abstract: A semiconductor device includes a substrate having an active pattern therein, a gate electrode extending across the active pattern and a source/drain region on the active pattern laterally adjacent the gate electrode. The device further includes a contact structure including a first contact on the source/drain region, a second contact on the first contact and a spacer on sidewalls of the first and second contacts.

Abstract: A three-dimensional (3D) image can be rendered by selectively transmitting a left-eye image and a right-eye image from a display panel in a manner of forming a transmitting electrode and a blocking electrode of the same layer on a switching parallax barrier and selectively applying a voltage to the transmitting electrode and the blocking electrode.

Abstract: A three-dimensional (3D) image can be rendered by selectively transmitting a left-eye image and a right-eye image from a display panel in a manner of forming a transmitting electrode and a blocking electrode of the same layer on a switching parallax barrier and selectively applying a voltage to the transmitting electrode and the blocking electrode.