Patents by Inventor Chung-Seok CHOI

Chung-Seok CHOI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9287309
    Abstract: An isolation structure and method of forming the same. The isolation structure includes a first isolation structure having including an insulation layer formed in a trench in a substrate and a second isolation structure, formed on the first isolation structure. The second isolation structure includes a first impurity region formed in the substrate, the first impurity region having a first impurity doping concentration, and a second impurity region that is formed around the first impurity region, the second impurity region having a second impurity doping concentration that is greater than the first doping concentration.
    Type: Grant
    Filed: August 27, 2013
    Date of Patent: March 15, 2016
    Assignee: SK Hynix Inc.
    Inventors: Chung-Seok Choi, Jang-Won Moon, Jong-Chae Kim, Do-Hwan Kim, Kyoung-Oug Ro
  • Patent number: 9202950
    Abstract: An image sensor includes a transfer gate formed over a substrate including front and back sides, a photoelectric conversion area formed in the substrate on one side of the transfer gate, a trench formed in the photoelectric conversion area and having a trench entrance located on the back side of the substrate, and a color filter formed over the backside of the substrate.
    Type: Grant
    Filed: November 4, 2013
    Date of Patent: December 1, 2015
    Assignee: SK Hynix Inc.
    Inventors: Chung-Seok Choi, Jong-Chae Kim, Do-Hwan Kim
  • Patent number: 9184203
    Abstract: An image sensor includes a substrate including photoelectric conversion regions, a magnetic layer disposed on a back side of the substrate and suitable for generating a magnetic field, and color filters and microlenses disposed on the magnetic layer.
    Type: Grant
    Filed: May 30, 2014
    Date of Patent: November 10, 2015
    Assignee: SK Hynix Inc.
    Inventors: Do-Hwan Kim, Dong-Hyun Woo, Jong-Chae Kim, Chung-Seok Choi
  • Publication number: 20150295001
    Abstract: An image sensor includes: a substrate including a photoelectric conversion region; a charge control layer overlapping with the photoelectric conversion region that is formed over the substrate; an inter-layer dielectric layer including lines that are formed over the charge control layer; and color filters and a light condensing pattern formed over the inter-layer dielectric layer to correspond to the photoelectric conversion region.
    Type: Application
    Filed: December 1, 2014
    Publication date: October 15, 2015
    Inventors: Chung-Seok CHOI, Dong-Hyun WOO, Jong-Chae KIM
  • Patent number: 9159755
    Abstract: An image sensor includes a photoelectric conversion region formed in a substrate, an interlayer insulation layer formed over a front side of the substrate, a carbon-containing layer doped with impurities and formed over a back side of the substrate, and a color filter and a micro-lens formed over the carbon-containing layer.
    Type: Grant
    Filed: December 15, 2013
    Date of Patent: October 13, 2015
    Assignee: SK Hynix Inc.
    Inventors: Chung-Seok Choi, Jong-Chae Kim, Do-Hwan Kim
  • Publication number: 20150187835
    Abstract: A transistor includes a substrate and a gate insulation layer formed on the substrate having a negative charge storage layer with a fixed negative charge to induce a buried channel in the substrate. A gate electrode is formed on the gate insulation layer.
    Type: Application
    Filed: June 13, 2014
    Publication date: July 2, 2015
    Inventors: Do-Hwan KIM, Yong-Suk CHUNG, Jong-Chae KIM, Chung-Seok CHOI
  • Publication number: 20150130003
    Abstract: An image sensor includes a substrate including photoelectric conversion regions, a magnetic layer disposed on a back side of the substrate and suitable for generating a magnetic field, and color filters and microlenses disposed on the magnetic layer.
    Type: Application
    Filed: May 30, 2014
    Publication date: May 14, 2015
    Applicant: SK hynix Inc.
    Inventors: Do-Hwan KIM, Dong-Hyun WOO, Jong-Chae KIM, Chung-Seok CHOI
  • Publication number: 20150123226
    Abstract: An image sensor includes a photoelectric conversion region formed in a substrate, an interlayer insulation layer formed over a front side of the substrate, a carbon-containing layer doped with impurities and formed over a back side of the substrate, and a color filter and a micro-lens formed over the carbon-containing layer.
    Type: Application
    Filed: December 15, 2013
    Publication date: May 7, 2015
    Inventors: Chung-Seok CHOI, Jong-Chae KIM, Do-Hwan KIM
  • Publication number: 20150008553
    Abstract: An image sensor includes a transfer gate formed over a substrate including front and back sides, a photoelectric conversion area formed in the substrate on one side of the transfer gate, a trench formed in the photoelectric conversion area and having a trench entrance located on the back side of the substrate, and a color filter formed over the backside of the substrate.
    Type: Application
    Filed: November 4, 2013
    Publication date: January 8, 2015
    Applicant: SK hynix Inc.
    Inventors: Chung-Seok CHOI, Jong-Chae KIM, Do-Hwan KIM
  • Publication number: 20140353468
    Abstract: An isolation structure and method of forming the same. The isolation structure includes a first isolation structure having including an insulation layer formed in a trench in a substrate and a second isolation structure, formed on the first isolation structure. The second isolation structure includes a first impurity region formed in the substrate, the first impurity region having a first impurity doping concentration, and a second impurity region that is formed around the first impurity region, the second impurity region having a second impurity doping concentration that is greater than the first doping concentration.
    Type: Application
    Filed: August 27, 2013
    Publication date: December 4, 2014
    Applicant: SK hynix Inc.
    Inventors: Chung-Seok CHOI, Jang-Won MOON, Jong-Chae KIM, Do-Hwan KIM, Kyoung-Oug RO