Abstract: The present invention provides methods for fabricating devices with low resistance structures involving a lift-off process. A radiation blocking layer is introduced between two resist layers in order to prevent intermixing of the photoresists. Cavities suitable for the formation of low resistance T-gates or L-gates can be obtained by a first exposure, developing, selective etching of blocking layer and a second exposure and developing. In another embodiment, a low resistance gate structure with pillars to enhance mechanical stability or strength is provided.

Abstract: This invention provides a bifacial photovoltaic device to enhance the conversion of solar energy into electricity with a layer by layer additive structure. The bifacial photovoltaic device comprises an electrically conductive core electrode, a plurality of semiconductor layers covering one end region of the core electrode and at least a portion of the two faces of the core electrode, a first counter electrode, a second counter electrode, and a third counter electrode connecting the first and the second counter electrodes. The device may also comprise a light reflective layer and an anti-reflective layer. This invention also provides an array of bifacial photovoltaic cells with simple interconnection schemes.

Abstract: Thin film transistors and circuits having improved mobility and stability are disclosed in this invention to have metal oxynitrides as the active channel layers. In one embodiment, the charge carrier mobility in the thin film transistors is increased by using the metal oxynitrides as the active channel layers. In another embodiment, a thin film transistor having a p-type metal oxynitride active channel layer and a thin film transistor having an n-type metal oxynitride active channel layer are fabricated to forming a CMOS circuit. In yet another embodiment, thin film transistor circuits having metal oxynitrides as the active channel layers are provided.

Abstract: Thin film transistors and arrays having controlled threshold voltage and improved ION/IOFF ratio are provided in this invention. In one embodiment, a thin film transistor having a first gate insulator of high breakdown field with positive fixed charges and a second gate insulator with negative fixed charges is provided; said negative fixed charges substantially compensate said positive fixed charges in order to reduce threshold voltage and OFF state threshold voltage of said transistor. In another embodiment, a thin film transistor having a first passivation layer with negative fixed charges is provided, the negative charges reduce substantially unwanted negative charges in the adjacent active channel and hence reduce the OFF state current and increase ION/IOFF ratio, which in turn reduce the threshold voltage of the transistor.

Abstract: The present invention discloses all-in-one organic electroluminescent inks for balanced charge injection. When of single layer organic lighting emitting diodes are made from these inks, the charge balance can be readily achieved. By using the invented all-in-one organic electroluminescent inks, both the device structure and the fabrication process are simplified, which will increase the production yield and reduce the production cost in manufacturing such devices. This invention also teaches methods to fabricate single layer all-in-one organic light emitting diodes.

Abstract: This invention provides a bifacial photovoltaic device to enhance the conversion of solar energy into electricity with a layer by layer additive structure. The bifacial photovoltaic device comprises an electrically conductive core electrode, a plurality of semiconductor layers covering one end region of the core electrode and at least a portion of the two faces of the core electrode, a first counter electrode, a second counter electrode, and a third counter electrode connecting the first and the second counter electrodes. The device may also comprise a light reflective layer and an anti-reflective layer. This invention also provides an array of bifacial photovoltaic cells with simple interconnection schemes.

Abstract: Photonic Band Gap (PBG) structures are utilized in microwave components as filters to suppress unwanted signals because they have the ability to produce a bandstop effect at certain frequency range depending on the structural dimensions. The unique property of PBG structures is due to the periodic change of the dielectric permittivity so interferences are created with the traveling electromagnetic waves. Such periodic arrangement could exist either inside of the dielectric substrate or in the ground plane of a microstrip transmission line structure. This invention provides tunable or switchable planar PBG structures, which contains lattice pattern of periodic perforations inside of the ground plane. The tuning or switching of the bandstop characteristics is achieved by depositing a conducting island surrounded by a layer of controllable thin film with variable conductivities.

Abstract: In electronic displays or imaging units, the control of pixels is achieved by an array of transistors. These transistors are in a thin film form and arranged in a two-dimensional configuration to form switching circuits, driving circuits or even read-out circuits. In this invention, thin film transistors and circuits with indium oxide-based channel layers are provided. These thin film transistors and circuits may be fabricated at low temperatures on various substrates and with high charge carrier mobilities. In addition to conventional rigid substrates, the present thin film transistors and circuits are particularly suited for the fabrication on flexible and transparent substrates for electronic display and imaging applications. Methods for the fabrication of the thin film transistors with indium oxide-based channels are provided.

Abstract: Organic semiconductor-based devices such as thin film transistors, organic light emitting devices and solar cells have potential in low cost electronic and optoelectronic applications. The performance of these organic semiconductor-based devices is often limited by the large resistance between the organic semiconductors and counter electrodes. This invention provides device structures and methods to reduce the unwanted resistance.

Abstract: The present invention discloses soluble copolymers of aniline and thiophene having a general formula I. Wherein: m and n each independently represents an integer, with m?1 and n?2. R1, R2, R3, R4, R5, R6 and R7 each independently represents, hydrogen atom, or a liner or branched or cyclo aliphatic group having from 1 to 20 carbon atoms, or an aromatic group having from 5 to 30 carbon atoms, or any other functional group, but at least one among R1, R2, R3, R4, R5, R6, and R7 is not a hydrogen atom. The present invention also teaches methods for the synthesis, characterization and application of the disclosed copolymers.

Abstract: This invention discloses structures of organic materials-based semiconductor devices and methods for the fabrication of such devices. According to this invention, each of the devices has a first part and a second part. The first part has at least a first organic semiconductor material layer deposited on a first electrode and the second part has at least a second organic semiconductor material layer deposited on a second electrode. Said device is formed by assembling the two individual parts together. Each part maybe fabricated separately and consists of an electrode coated with semiconductor organic materials required by the function of the desired device. A schematic diagram in the FIG. 3 shows a first part (11) consisting of a first substrate (13), a first electrode (14) and at least one layer of organic materials (15); the second part (12) of the device consisting of the second substrate (16), a second electrode (17) with at least a layer of organic materials (18).

Abstract: This invention provides an innovative multi-line structure and an effective four-terminal method for the resistivity measurement of semiconductor materials. The multi-line structure and the four-terminal method not only allow one to perform resistivity measurement on any inorganic and organic semiconductor thin film conveniently, rapidly and accurately but also offer the means to study resistivity uniformity across the semiconductor thin film.

Abstract: For light emitting devices used in conventional information displays, the dimensions of each light emitting device are small and the effect of series resistance of electrodes is not too severe in affecting the performance of the displays. When the dimensions or areas of the devices increase for large area display applications, the effect of series resistance becomes significant. This invention provides a light emitting device and array having a reduced effective series resistance for the optically transparent and electrically conducting oxide electrodes.

Abstract: The present invention discloses soluble copolymers of aniline and thiophene having a general formula I. Wherein: m and n each independently represents an integer, with m?1 and n?2. R1, R2, R3, R4, R5, R6 and R7 each independently represents, hydrogen atom, or a liner or branched or cyclo aliphatic group having from 1 to 20 carbon atoms, or an aromatic group having from 5 to 30 carbon atoms, or any other functional group, but at least one among R1, R2, R3, R4, R5, R6, and R7 is not a hydrogen atom. The present invention also teaches methods for the synthesis, characterization and application of the disclosed copolymers.

Abstract: Organic semiconductor-based devices such as thin film transistors, organic light emitting devices and solar cells have potential in low cost electronic and optoelectronic applications. The performance of these organic semiconductor-based devices is often limited by the large resistance between the organic semiconductors and counter electrodes. This invention provides device structures and methods to reduce the unwanted resistance.

Abstract: The present invention relates to oxadiazole metallic complexes. More specifically it relates to the synthesis and electronic and opto-electronic applications of oxadiazole metallic complexes having a general Formula I, wherein each of variables is defined herein.

Abstract: In electronic displays or imaging units, the control of pixels is achieved by an array of transistors. These transistors are in a thin film form and arranged in a two-dimensional configuration to form switching circuits, driving circuits or even read-out circuits. In this invention, thin film transistors and circuits with indium oxide-based channel layers are provided. These thin film transistors and circuits may be fabricated at low temperatures on various substrates and with high charge carrier mobilities. In addition to conventional rigid substrates, the present thin film transistors and circuits are particularly suited for the fabrication on flexible and transparent substrates for electronic display and imaging applications. Methods for the fabrication of the thin film transistors with indium oxide-based channels are provided.

Abstract: As the basic building block of microwave and millimeter wave units and circuits, the microwave switch must fulfill several requirements including low insertion loss, high isolation and small dimensions. For conventional electrostatically actuated microwave MEMS switches, the isolation between DC and RF is achieved using an RF choke. In this invention, a miniature electrostatically actuated microwave switch with a cantilever and employing two resistive lines on a first substrate and act as the actuation electrodes is provided. The resistive lines as the actuation electrodes according to this invention allows one to minimize the switch dimensions, to facilitate the integration and minimize the interference of the propagating microwave or millimeter wave signals.

Abstract: This invention discloses methods for the fabrication of organic semiconductor material-based devices under non-vacuum environment. In one embodiment, electrodes are formed by electrodeposition from an electrolyte containing ions or complexes of the electrode materials to be deposited. In another embodiment, electrodes are formed by solution processing from a solution (or ink) containing nano-particle of the electrode materials or the precursor of electrode materials to be deposited. In addition, two different modes, either layer by layer or layer to layer, are disclosed for the fabrication of organic semiconductor material-based devices, wherein all semiconductor organic materials required by the function of the desired device are deposited under an non-vacuum environment.

Abstract: The present invention discloses methods to remove impurities in polymeric materials in order to improve the opto-electronic characteristics of devices fabricated from these polymers. The polymers include but not limited to polyarylenes, polyarylenevinylenes, polyaryleneethylnylene, polyfluorenes, polyanilines, polythiophenes, polypyrroles, and any conjugated co-polymers. The methods involve the selection of a scavenger or chelating agent and use it to remove metallic impurities from the polymers. The methods involve dissolving the polymer in a suitable solvent, adding a scavenger, mixing to form a scavenger, containing phase, and finally separating the scavenger containing phase from the polymer phase. According to this invention, it is preferable for the selected scavengers to have functional groups which can chemically react with metallic species and form a coordination compound that is not soluble in a selected solvent.