Abstract: The method for performing activation of n-type or p-type dopants in a GaN-base semiconductor includes the following steps: providing a substrate including a GaN-base semiconductor material layer, performing the following successive steps at least twice: implanting electric dopant impurities in the semiconductor material layer, performing heat treatment so as to activate the electric dopant impurities in the semiconductor material layer, a cap layer covering the semiconductor material layer when the heat treatment is performed, two implantation steps of electric dopant impurities being separated by a heat treatment step.

Abstract: The method for performing activation of p-type dopants in a GaN-based semiconductor includes a first step of providing a substrate including (i) a GaN-based semiconductor material layer including p-type electric dopant impurities, (ii) a cap block devoid of any silicon-based compound, in contact with the semiconductor material layer, and (iii) a silicon-based covering layer covering the cap block. The method includes a second heat treatment step at a temperature of more than 900° C. so as to activate the p-type electric dopant impurities in the semiconductor material layer.

Abstract: The method for doping a GaN-base semiconductor to fabricate a p-n junction includes a first step consisting in providing a substrate including a GaN-base semiconductor material layer covered by a silicon-base mask. The method includes a second step of performing implantation of impurities in the mask so as to transfer additional dopant impurities of Si type by diffusion from the mask to the semiconductor material layer to form an n-type area adjacent to a p-type area. Configured heat treatment is then performed to activate the dopant impurities and the additional dopant impurities.

Abstract: The invention relates to a post-activation method of dopants in a doped and activated GaN-base semiconductor layer, including the following successive steps: providing said doped and activated substrate, eliminating a part of the semiconductor material layer.

Abstract: The method includes the steps of a) Providing a stack having a support substrate and a film of GaN having dopant species, b) Directly bonding a shielding layer having a thickness higher than 2 micrometers to the surface of the film of GaN, so as to form an activation structure, and c) Applying a thermal budget to the activation structure according to conditions allowing to electrically activate at least one portion of the dopant species.

Abstract: The invention relates to a post-activation method of dopants in a doped and activated GaN-base semiconductor layer, including the following successive steps: providing said doped and activated substrate, eliminating a part of the semiconductor material layer.

Abstract: The method for performing activation of p-type dopants in a GaN-base semiconductor comprises a first step consisting in providing a substrate comprising (i) a GaN-base semiconductor material layer comprising p-type electric dopant impurities, (ii) a cap block devoid of any silicon-base compound, in contact with the semiconductor material layer, and (iii) a silicon-base covering layer covering the cap block. The method comprises a second heat treatment step at a temperature of more than 900° C. so as to activate the p-type electric dopant impurities in the semiconductor material layer.

Abstract: The method for performing activation of n-type or p-type dopants in a GaN-base semiconductor includes the following steps: providing a substrate including a GaN-base semiconductor material layer, performing the following successive steps at least twice: implanting electric dopant impurities in the semiconductor material layer, performing heat treatment so as to activate the electric dopant impurities in the semiconductor material layer, a cap layer covering the semiconductor material layer when the heat treatment is performed, two implantation steps of electric dopant impurities being separated by a heat treatment step.

Abstract: The method for doping a GaN-base semiconductor to fabricate a p-n junction includes a first step consisting in providing a substrate including a GaN-base semiconductor material layer covered by a silicon-base mask. The method includes a second step of performing implantation of impurities in the mask so as to transfer additional dopant impurities of Si type by diffusion from the mask to the semiconductor material layer to form an n-type area adjacent to a p-type area. Configured heat treatment is then performed to activate the dopant impurities and the additional dopant impurities.

Abstract: The method includes the steps of a) Providing a stack having a support substrate and a film of GaN having dopant species, b) Directly bonding a shielding layer having a thickness higher than 2 micrometers to the surface of the film of GaN, so as to form an activation structure, and c) Applying a thermal budget to the activation structure according to conditions allowing to electrically activate at least one portion of the dopant species.

Abstract: The bonding method of two silicon-based surfaces includes the steps of: subjecting at least one of the surfaces to surface activation treatment by means of an oxygen plasma comprising chlorine, the dilution percentage by volume of the chlorine in the oxygen of the plasma being from 0.25 to 10%, preferably from 1 to 3%, placing the treated surfaces in contact.