Patents by Inventor Cliff Knollenberg

Cliff Knollenberg has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Light emitting structure including high-al content MQWH
    Patent number: 8154009
    Abstract: A GaN/AlN superlattice is formed over a GaN/sapphire template structure, serving in part as a strain relief layer for growth of subsequent layers (e.g., deep UV light emitting diodes). The GaN/AlN superlattice mitigates the strain between a GaN/sapphire template and a multiple quantum well heterostructure active region, allowing the use of high Al mole fraction in the active region, and therefore emission in the deep UV wavelengths.
    Type: Grant
    Filed: May 4, 2009
    Date of Patent: April 10, 2012
    Assignee: Palo Alto Research Center Incorporated
    Inventors: William S. Wong, Michael A. Kneissl, Zhihong Yang, Mark Teepe, Cliff Knollenberg
  • Method of manufacturing a semiconductor device including a superlattice strain relief layer
    Patent number: 8088637
    Abstract: A GaN/AlN superlattice is formed over a GaN/sapphire template structure, serving in part as a strain relief layer for growth of subsequent layers (e.g., deep UV light emitting diodes). The GaN/AlN superlattice mitigates the strain between a GaN/sapphire template and a multiple quantum well heterostructure active region, allowing the use of high Al mole fraction in the active region, and therefore emission in the deep UV wavelengths.
    Type: Grant
    Filed: May 4, 2009
    Date of Patent: January 3, 2012
    Assignee: Palo Alto Research Center Incorporated
    Inventors: William S. Wong, Michael A. Kneissl, Zhihong Yang, Mark Teepe, Cliff Knollenberg
  • Superlattice strain relief layer for semiconductor devices
    Patent number: 7547925
    Abstract: A GaN/AlN superlattice is formed over a GaN/sapphire template structure, serving in part as a strain relief layer for growth of subsequent layers (e.g., deep UV light emitting diodes). The GaN/AlN superlattice mitigates the strain between a GaN/sapphire template and a multiple quantum well heterostructure active region, allowing the use of high Al mole fraction in the active region, and therefore emission in the deep UV wavelengths.
    Type: Grant
    Filed: February 17, 2006
    Date of Patent: June 16, 2009
    Assignee: Palo Alto Research Center Incorporated
    Inventors: William S. Wong, Michael A. Kneissl, Zhihong Yang, Mark Teepe, Cliff Knollenberg
  • Superlattice strain relief layer for semiconductor devices
    Publication number: 20070108456
    Abstract: A GaN/AlN superlattice is formed over a GaN/sapphire template structure, serving in part as a strain relief layer for growth of subsequent layers (e.g., deep UV light emitting diodes). The GaN/AlN superlattice mitigates the strain between a GaN/sapphire template and a multiple quantum well heterostructure active region, allowing the use of high Al mole fraction in the active region, and therefore emission in the deep UV wavelengths.
    Type: Application
    Filed: February 17, 2006
    Publication date: May 17, 2007
    Inventors: William Wong, Michael Kneissl, Zhihong Yang, Mark Teepe, Cliff Knollenberg