Abstract: Detection of the endpoint for removal of a target film overlying a stopping film by removing the target film with a process that selectively generates a chemical reaction product (for example ammonia when polishing a wafer with a nitride film in a slurry containing KOH) with one of the stopping film and the target film, converting the chemical reaction product to a separate product, producing excited molecules from the separate product, and monitoring the level of light emitted from the excited molecules as the target film is removed.

Abstract: Detection of the endpoint for removal of a target film overlying a stopping film by removing the target film with a process that selectively generates a chemical reaction product (for example, ammonia when polishing a wafer with a nitride film in a slurry containing KOH) with either the target or stopping film, and monitoring the level of chemical reaction product as the target film is removed. The reaction product is extracted as a gas from the slurry and monitored using a threshold photoionization mass spectrometer.

Abstract: Detection of the endpoint for removal of a target film overlying a stopping film by removing the target film with a process that selectively generates a chemical reaction product (for example ammonia when polishing a wafer with a nitride film in a slurry containing KOH) with either the target or stopping film, and monitoring the level of chemical reaction product by threshold photoionization mass spectroscopy as the target film is removed.

Abstract: A method for detecting the endpoint for removal of a target film overlying a stopping film by chemical-mechanical polishing using a slurry, by removing the target film with a polishing process that generates a chemical reaction product (for example ammonia when polishing a wafer with a nitride film in a slurry containing KOH) in the slurry, adding to the slurry a reagent which produces a characteristic result upon reacting with the chemical reaction product, and monitoring the slurry for the characteristic result as the target film is removed.

Abstract: Detection of the endpoint for removal of a target film overlying a stopping film by removing the target film with a process that selectively produces a gaseous chemical reaction product (for example ammonia when polishing a wafer with a nitride film in a slurry containing KOH) with one of the stopping film and the target film, mixing the gaseous chemical reaction product present with a separate gas to form solid particles, and monitoring the amount of the solid particles as the target film is removed. Also, detection of a substance at very low concentrations in a liquid, by extracting the substance present as a gas from the liquid, mixing the gas with another substance to form solid particles, and monitoring the amount of the solid particles to detect the substance.

Abstract: Detection of the endpoint for removal of a target film overlying a stopping film by removing the target film with a process that selectively generates a chemical reaction product (for example ammonia when polishing a wafer with a nitride film in a slurry containing KOH) with either the target or stopping film, and monitoring the level of chemical reaction product as the target film is removed. Also, detection of a substance at very low concentrations in a liquid, by extracting the substance present as a gas from the liquid and monitoring the gas to detect the substance.

Abstract: Detection of the endpoint for removal of a target film overlying a stopping film by removing the target film with a process that selectively generates a chemical reaction product (for example ammonia when polishing a wafer with a nitride film in a slurry containing KOH) with one of the stopping film and the target film, converting the chemical reaction product to a separate product, producing excited molecules from the separate product, and monitoring the level of light emitted from the excited molecules as the target film is removed.

Abstract: Detection of the endpoint for removal of a target film overlying a stopping film by removing the target film with a process that selectively generates a chemical reaction product (for example ammonia when polishing a wafer with a nitride film in a slurry containing KOH) with one of the stopping film and the target film, converting the chemical reaction product to a separate product, and monitoring the level of the separate product as the target film is removed.

Abstract: An apparatus and method for improving planarity of chemical-mechanical polishing of substrates are provided. The apparatus includes a platen having a planar surface upon which a polishing pad is removably affixed. The pad has an exposed planar surface, and a carrier removably holds the substrate against the planar surface. The apparatus includes a slurry distribution system and a slurry removal system. The slurry distribution system provides slurry to an instantaneous interface area of the substrate and planar surface through the platen and pad, while the slurry removal system removes slurry from the instantaneous interface area through the pad and the platen, notwithstanding rotation of the platen and/or substrate, as well as linear movement of the substrate relative to the rotating platen.