Abstract: An electro-optical device includes an optical de-multiplexing portion operative to output a first optical signal having a first wavelength and a second optical signal having a second wavelength, an array of photodetectors, and a switching logic portion communicatively connected to the array of photodetectors, the switching logic portion operative to determine which photodetector of the array of photodetectors is converting the first optical signal into a first electrical signal and output the first electrical signal from a first output node associated with the first optical signal.

Abstract: A method and structure for a modulator which includes a forward-biased diode optimized for power and area to perform a tuning function, and a reverse-biased diode optimized for speed to perform a modulation function.

Abstract: A technique is provided for configuring an optical receiver. A photo detector is connected to a load resistor, and the photo detector includes an internal capacitance. A current source is connected through a switching circuit to the load resistor and to the photo detector. The current source is configured to discharge the internal capacitance of the photo detector. The switching circuit is configured to connect the current source to the internal capacitance based on a previous data bit.

Abstract: Designing a photonics switching system is provided. A photonic switch diode is designed to attain each performance metric in a plurality of performance metrics associated with a photonic switching system based on a weighted value corresponding to each of the plurality of performance metrics. A switch driver circuit is selected from a plurality of switch driver circuits for the photonic switching system. It is determined whether each performance metric associated with the photonic switching system meets or exceeds a threshold value corresponding to each of the plurality of performance metrics based on the photonic switch diode designed and the switch driver circuit selected. In response to determining that each performance metric associated with the photonic switching system meets or exceeds the threshold value corresponding to each of the performance metrics, the photonic switching system is designed using the photonic switch diode designed and the switch driver circuit selected.

Abstract: Systems and methods for processing an optical signal are disclosed. The optical signal is converted to a voltage signal and the voltage signal is amplified. In addition, a signal strength and/or a signal quality parameter is monitored and an indication of the signal strength and/or a signal quality parameter is generated. Further, a gain and/or an operating bandwidth on the conversion or the amplification can be adjusted based on the indication to reduce power consumption of an optical receiver.

Abstract: A silicon-on-insulator wafer is provided. The silicon-on-insulator wafer includes a silicon substrate having optical vias formed therein. In addition, an optically transparent oxide layer is disposed on the silicon substrate and the optically transparent oxide layer is in contact with the optical vias. Then, a complementary metal-oxide-semiconductor layer is formed over the optically transparent oxide layer.

Abstract: A differential amplifier stage and method for offset cancellation include an amplifier having an input and an output. An internal offset cancellation circuit has an input for receiving a control signal to control offset cancellation in the amplifier. The offset cancellation circuit is integrated with the amplifier but isolated from the input and the output of the amplifier, and, in accordance with its isolation, an impedance of the stage is unaffected by the offset cancellation circuit.

Abstract: Designing a photonics switching system is provided. A photonic switch diode is designed to attain each performance metric in a plurality of performance metrics associated with a photonic switching system based on a weighted value corresponding to each of the plurality of performance metrics. A switch driver circuit is selected from a plurality of switch driver circuits for the photonic switching system. It is determined whether each performance metric associated with the photonic switching system meets or exceeds a threshold value corresponding to each of the plurality of performance metrics based on the photonic switch diode designed and the switch driver circuit selected. In response to determining that each performance metric associated with the photonic switching system meets or exceeds the threshold value corresponding to each of the performance metrics, the photonic switching system is designed using the photonic switch diode designed and the switch driver circuit selected.

Abstract: A method of forming a circuit includes forming a transimpedance amplifier having a first input node and a second input node. The method also includes forming a feedback circuit having a first transistor having a drain terminal connected to the first input node, a source terminal, and a gate terminal, a second transistor having a drain terminal connected to the second input node, a source terminal, and a gate terminal, and a third transistor having a drain terminal connected to the source terminal of the first transistor and the source terminal of the second terminal.

Abstract: A method and structure for a modulator which includes a forward-biased diode optimized for power and area to perform a tuning function, and a reverse-biased diode optimized for speed to perform a modulation function.

Abstract: A method for controlling an output of an electro-optical de-multiplexing device, the method including identifying which photodetector of a first array of photodetectors is converting a first channel of an optical signal into a first electrical channel signal, and affecting a communicative connection between the identified photodetector of the first array of photodetectors that is converting the first channel of the optical signal into the first electrical channel signal and a first output node associated with the first electrical channel signal.

Abstract: An electro-optical device includes an optical de-multiplexing portion operative to output a first optical signal having a first wavelength and a second optical signal having a second wavelength, an array of photodetectors, and a switching logic portion communicatively connected to the array of photodetectors, the switching logic portion operative to determine which photodetector of the array of photodetectors is converting the first optical signal into a first electrical signal and output the first electrical signal from a first output node associated with the first optical signal.

Abstract: A circuit includes a transimpedance amplifier portion having a first input node and a second input node, and a feedback circuit portion comprising a first transistor having a drain terminal connected to the first input node, a source terminal, and a gate terminal, a second transistor having a drain terminal connected to the second input node, a source terminal, and a gate terminal, and a third transistor having a drain terminal connected to the source terminal of the first transistor and the source terminal of the second terminal.

Abstract: A silicon-on-insulator wafer is provided. The silicon-on-insulator wafer includes a silicon substrate having optical vias formed therein. In addition, an optically transparent oxide layer is disposed on the silicon substrate and the optically transparent oxide layer is in contact with the optical vias. Then, a complementary metal-oxide-semiconductor layer is formed over the optically transparent oxide layer.

Abstract: A differential amplifier stage and method for offset cancellation include an amplifier having an input and an output. An internal offset cancellation circuit has an input for receiving a control signal to control offset cancellation in the amplifier. The offset cancellation circuit is integrated with the amplifier but isolated from the input and the output of the amplifier, and, in accordance with its isolation, an impedance of the stage is unaffected by the offset cancellation circuit.

Abstract: A silicon-on-insulator wafer is provided. The silicon-on-insulator wafer includes a silicon substrate having optical vias formed therein. In addition, an optically transparent oxide layer is disposed on the silicon substrate and the optically transparent oxide layer is in contact with the optical vias. Then, a complementary metal-oxide-semiconductor layer is formed over the optically transparent oxide layer.

Abstract: An optical receiver, a method of operating an optical receiver, a correction based transimpedance amplifier circuit, and a method of adjusting an output of a transimpedance amplifier. In one embodiment, the optical receiver comprises an optical-to-electrical converter, a transimpedance amplifier, and a correction circuit. The optical-to-electrical converter is provided for receiving an optical signal and converting the optical signal to an electrical signal. The transimpedance amplifier is provided for receiving the electrical signal from the converter and for generating from the electrical signal an amplified electrical signal. The amplified electrical signal has inter symbol interference resulting from a reduced bandwidth of the transimpedance amplifier.

Abstract: A technique is provided for configuring an optical receiver. A photo detector is connected to a load resistor, and the photo detector includes an internal capacitance. A current source is connected through a switching circuit to the load resistor and to the photo detector. The current source is configured to discharge the internal capacitance of the photo detector. The switching circuit is configured to connect the current source to the internal capacitance based on a previous data bit.

Abstract: A technique is provided for configuring an optical receiver. A photo detector is connected to a load resistor, and the photo detector includes an internal capacitance. A current source is connected through a switching circuit to the load resistor and to the photo detector. The current source is configured to discharge the internal capacitance of the photo detector. The switching circuit is configured to connect the current source to the internal capacitance based on a previous data bit.

Abstract: An optoelectronic integrated circuit for coupling light to or from an optical waveguide formed in an optical device layer in a near-normal angle to that layer. In an embodiment, the integrated circuit comprises a semiconductor body including a metal-dielectric stack, an optical device layer, a buried oxide layer and a semiconductor substrate arranged in series between first and second opposite sides of the semiconductor body. At least one optical waveguide is formed in the optical device layer for guiding light in a defined plane in that device layer. Diffractive coupling elements are disposed in the optical device layer to couple light from the waveguide toward the second surface of the semiconductor body at a near-normal angle to the defined plane in the optical device layer. In an embodiment, an optical fiber is positioned against the semiconductor body for receiving the light from the coupling elements.