Abstract: A metrology apparatus for determining one or more parameters of a structure fabricated in or on a semiconductor substrate. The apparatus comprises a transducer array comprising a plurality of transducers positioned in a plane. The plurality of transducers comprises at least one transmitter transducer for emitting acoustic radiation in a frequency range from 1 GHz to 100 GHz towards the structure, and at least one receiver transducer for receiving acoustic radiation reflected and/or diffracted from the structure.

Abstract: An electron beam inspection apparatus, the apparatus including a plurality of electron beam columns, each electron beam column configured to provide an electron beam and detect scattered or secondary electrons from an object, and an actuator system configured to move one or more of the electron beam columns relative to another one or more of the electron beam columns, the actuator system including a plurality of first movable structures at least partly overlapping a plurality of second movable structures, the first and second movable structures supporting the plurality of electron beam columns.

Abstract: Disclosed is an optical imaging system, and associated method, comprising a stage module configured to support an object such that an area of the object is illuminated by an illumination beam; an objective lens configured to collect at least one signal beam, the at least one signal beam originating from the illuminated area of the object; an image sensor configured to capture an image formed by the at least one signal beam collected by the objective lens; and a motion compensatory mechanism operable to compensate for relative motion of the stage module with respect to the objective lens during an image acquisition. The motion compensatory mechanism causes a compensatory motion of one or more of: said objective lens or at least one optical element thereof; said image sensor; and/or an optical element comprised within a detection branch and/or illumination branch of the optical imaging system.

Abstract: A direct write exposure apparatus configured to process a plurality of substrates, the apparatus including: a substrate holder configured to hold a substrate having a usable patterning area; a patterning system configured to project different patterns onto the substrate; a processing system configured to: determine a first combination of one or more patterns that are to be applied on a first substrate of the plurality of substrates; and determine a second, different combination of one or more patterns that are to be applied on a second, subsequent, substrate of the plurality of substrates.

Abstract: A method and apparatus for selecting patterns from an image such as a design layout. The method includes obtaining an image (e.g., of a target layout) having a plurality of patterns; determining, based on pixel intensities within the image, a metric (e.g., entropy) indicative of an amount of information contained in one or more portions of the image; and selecting, based on the metric, a sub-set of the plurality of patterns from the one or more portions of the image having values of the metric within a specified range. The sub-set of patterns can be provided as training data for training a model associated with a patterning process.

Abstract: A method for determining an optimized weighting of an encoder and decoder network; the method comprising: for each of a plurality of test weightings, performing the following steps with the encoder and decoder operating using the test weighting: (a) encoding, using the encoder, a reference image and a distorted image into a latent space to form an encoding; (b) decoding the encoding, using the decoder, to form a distortion map indicative of a difference between the reference image and a distorted image; (c) spatially transforming the distorted image by the distortion map to obtain an aligned image; (d) comparing the aligned image to the reference image to obtain a similarity metric; and (e) determining a loss function which is at least partially defined by the similarity metric; wherein the optimized weighting is determined to be the test weighting which has an optimized loss function.

Abstract: A method for increasing certainty in parameterized model predictions. The method includes clustering dimensional data in a latent space associated with a parameterized model into clusters. Different clusters correspond to different portions of a given input. The method includes predicting, with the parameterized model, an output based on the dimensional data in the latent space. The method includes transforming, with the parameterized model, the dimensional data in the latent space into a recovered version of the given input that corresponds to one or more of the clusters. In some embodiments, the method includes determining which one or more clusters correspond to predicted outputs with higher variance, and making the parameterized model more descriptive by adding to the dimensionality of the latent space, and/or training the parameterized model with more diverse training data associated with one or more determined clusters or parts thereof associated with predicted outputs with the higher variance.

Abstract: The disclosure relates to determining information about a target structure formed on a substrate using a lithographic process. In one arrangement, a cantilever probe is provided having a cantilever arm and a probe element. The probe element extends from the cantilever arm towards the target structure. Ultrasonic waves are generated in the cantilever probe. The ultrasonic waves propagate through the probe element into the target structure and reflect back from the target structure into the probe element or into a further probe element extending from the cantilever arm. The reflected ultrasonic waves are detected and used to determine information about the target structure.

Abstract: The invention relates to a method for the detection of target components that comprise label particles, for example magnetic particles (1). The method includes (a) collecting the target components at a binding surface (12, 112, 512) of a carrier (11, 111, 211, 311, 411, 511); (b) directing an input light beam (L1, L1a, L1b) into the carrier such that it is totally internally reflected in an investigation region (13, 313a, 313b) at the binding surface (12, 112, 512); and (c) determining the amount of light of an output light beam (L2, L2a, L2b) that comprises at least some of the totally internally reflected light. Evanescent light generated during the total internal reflection is affected (absorbed, scattered) by target components and/or label particles (1) at the binding surface (12) and will therefore be missing in the output light beam (L2). This can be used to determine the amount of target components at the binding surface (12) from the amount of light in the output light beam (L2, L2a, L2b).

Abstract: The invention relates to a carrier with a binding surface at which target components that comprise label particles, for example magnetic particles, can collect and optionally bind to specific capture elements. An input light beam (L1) is transmitted into the carrier and totally internally reflected at the binding surface. The amount of light in the output light beam (L2) and optionally also of fluorescence light emitted by target components at the binding surface is then detected by a light detector. Evanescent light generated during the total internal reflection is affected (absorbed, scattered) by target components and/or label particles at the binding surface and will therefore be missing in the output light beam (L2). This can be used to determine the amount of target components at the binding surface from the amount of light in the output light beam (L2, L2a, L2b).

Abstract: A pick-and-place tool including a plurality of movable holder structures, and a plurality of pick-and-place structures, each holder structure accommodating two or more of the pick-and-place structures, wherein at least one of the two or more pick-and-place structures of a respective holder structure is able to move along a respective holder structure independently from another at least one of the two or more pick-and-place structures of the respective holder structure, and wherein each pick-and-place structure includes a pick-up element configured to pick up a donor component at a donor structure and place the donor component an acceptor structure.

Abstract: An electron beam inspection apparatus, the apparatus including a plurality of electron beam columns, each electron beam column configured to provide an electron beam and detect scattered or secondary electrons from an object, and an actuator system configured to move one or more of the electron beam columns relative to another one or more of the electron beam columns, the actuator system including a plurality of first movable structures at least partly overlapping a plurality of second movable structures, the first and second movable structures supporting the plurality of electron beam columns.

Abstract: An electron beam inspection apparatus, the apparatus including a plurality of electron beam columns, each electron beam column configured to provide an electron beam and detect scattered or secondary electrons from an object, and an actuator system configured to move one or more of the electron beam columns relative to another one or more of the electron beam columns. The actuator system may include a plurality of first movable structures at least partly overlapping a plurality of second movable structures, the first and second movable structures supporting the plurality of electron beam columns.

Abstract: An exposure apparatus including: a substrate holder constructed to support a substrate; a patterning device configured to provide radiation modulated according to a desired pattern, the patterning device including a plurality of two-dimensional arrays of radiation sources, each radiation source configured to emit a radiation beam; a projection system configured to project the modulated radiation onto the substrate, the projection system including a plurality of optical elements arranged side by side and arranged such that a two-dimensional array of radiation beams from a two-dimensional array of radiation sources impinges a single optical element of the plurality of optical elements; and an actuator configured to provide relative motion between the substrate and the plurality of two-dimensional arrays of radiation sources in a scanning direction to expose the substrate.

Abstract: A method and apparatus to provide a plurality of radiation beams modulated according to at least two sub patterns of a pattern using radiation sources, the radiation sources producing radiation beams of at least two spot sizes such that each of the radiation beams having a same spot size of the at least two spot sizes is used to produce one of the at least two sub patterns, project the plurality of beams onto a substrate, and provide relative motion between the substrate and the plurality of radiation sources, in a scanning direction to expose the substrate. A method and apparatus to provide radiation modulated according to a desired pattern using a plurality of rows of two-dimensional arrays of radiation sources, project the modulated radiation onto a substrate using a projection system, and remove fluid from between the projection system and the substrate using one or more fluid removal units.

Abstract: A target structure (T) made by lithography or used in lithography is inspected by irradiating the structure at least a first time with EUV radiation (304) generated by inverse Compton scattering. Radiation (308) scattered by the target structure in reflection or transmission is detected (312) and properties of the target structure are calculated by a processor (340) based on the detected scattered radiation. The radiation may have a first wavelength in the EUV range of 0.1 nm to 125 nm. Using the same source and controlling an electron energy, the structure may be irradiated multiple times with different wavelengths within the EUV range, and/or with shorter (x-ray) wavelengths and/or with longer (UV, visible) wavelengths. By rapid switching of electron energy in the inverse Compton scattering source, irradiation at different wavelengths can be performed several times per second.

Abstract: An exposure apparatus including: a substrate holder constructed to support a substrate; a patterning device configured to provide radiation modulated according to a desired pattern, the patterning device including an array of radiation source modules configured to project the modulated radiation onto a respective array of exposure regions on the substrate; and a distributed processing system configured to process projection related data to enable the projection of the desired pattern onto the substrate, the distributed processing system including at least one central processing unit and a plurality of module processing units each associated with a respective radiation source module.

Abstract: A direct write exposure apparatus configured to process a plurality of substrates, the apparatus including: a substrate holder configured to hold a substrate having a usable patterning area; a patterning system configured to project different patterns onto the substrate; a processing system configured to: determine a first combination of one or more patterns that are to be applied on a first substrate of the plurality of substrates; and determine a second, different combination of one or more patterns that are to be applied on a second, subsequent, substrate of the plurality of substrates.

Abstract: A target structure (T) made by lithography or used in lithography is inspected by irradiating the structure at least a first time with EUV radiation (304) generated by inverse Compton scattering. Radiation (308) scattered by the target structure in reflection or transmission is detected (312) and properties of the target structure are calculated by a processor (340) based on the detected scattered radiation. The radiation may have a first wavelength in the EUV range of 0.1 nm to 125 nm. Using the same source and controlling an electron energy, the structure may be irradiated multiple times with different wavelengths within the EUV range, and/or with shorter (x-ray) wavelengths and/or with longer (UV, visible) wavelengths. By rapid switching of electron energy in the inverse Compton scattering source, irradiation at different wavelengths can be performed several times per second.

Abstract: An exposure apparatus including: a substrate holder constructed to support a substrate; a patterning device configured to provide radiation modulated according to a desired pattern, the patterning device including an array of radiation source modules configured to project the modulated radiation onto a respective array of exposure regions on the substrate; and a distributed processing system configured to process projection related data to enable the projection of the desired pattern onto the substrate, the distributed processing system including at least one central processing unit and a plurality of module processing units each associated with a respective radiation source module.