Patents by Inventor Colin J. Brodsky

Colin J. Brodsky has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20090075217
    Abstract: A method and apparatus for forming a tapered photoresist edge. The method includes: forming a photoresist layer on a substrate; exposing a first annular region of the photoresist layer adjacent to a perimeter of the substrate to actinic radiation, the first annular region having a first outer perimeter proximate to a perimeter of the substrate and a first inner perimeter away from the perimeter of the substrate, the actinic radiation gradually decreasing in intensity from the first outer perimeter to the first inner perimeter; and developing the exposed first annular region of the photoresist layer to form a tapered profile in a second annular region of the photoresist layer, the second annular region having a second perimeter proximate to the perimeter of the substrate and a second inner perimeter away from the substrate perimeter, the profile gradually increasing in thickness from the second outer perimeter to the second inner perimeter.
    Type: Application
    Filed: September 19, 2007
    Publication date: March 19, 2009
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventor: Colin J. Brodsky
  • Patent number: 7494919
    Abstract: A method for reducing the size of a patterned semiconductor feature includes forming a first layer over a substrate to be patterned, and forming a photoresist layer over the first layer. The photoresist layer is patterned so as to expose portions of the first layer, and the exposed portions of the first layer are removed in a manner so as to create an undercut region beneath the patterned photoresist layer. The patterned photoresist layer is reflowed so as to cause reflowed portions of the patterned photoresist layer to occupy at least a portion of the undercut region.
    Type: Grant
    Filed: January 12, 2005
    Date of Patent: February 24, 2009
    Assignee: International Business Machines Corporation
    Inventors: Colin J. Brodsky, Scott D. Allen
  • Patent number: 7493186
    Abstract: A method of controlling one or more critical dimension (CD) features, dependent upon at least a first and a second processing parameter, with a single metrology step, while still enabling decoupled feedback to the first and the second processing parameter, includes an initial process characterization; producing a production piece; a single metrology step to determine the critical dimensions of the produced features; solving a system of equations simultaneously for individual feedback correction values for the first and second processing parameters; and applying the individual feedback correction values to their respective processing parameters.
    Type: Grant
    Filed: December 20, 2006
    Date of Patent: February 17, 2009
    Assignee: International Business Machines Corporation
    Inventors: Colin J. Brodsky, Michael M. Crouse, Allen H. Gabor
  • Patent number: 7473461
    Abstract: A film stack is provided in which a first film including a first polymer directly contacts a surface of a substrate at which a given material is exposed. A second film, which can include a second polymer other than the first polymer, is formed to have an inner surface contacting the first film. The second film can have a thickness at which a free energy of the second film would be negative if the second film were disposed directly on the substrate. Desirably, the resulting second film is substantially free of dewetting defects.
    Type: Grant
    Filed: July 10, 2007
    Date of Patent: January 6, 2009
    Assignee: International Business Machines Corporation
    Inventors: Colin J. Brodsky, Wai-Kin Li, Steven A. Scheer
  • Publication number: 20080286683
    Abstract: A method and a structure. The structure includes: a solid core comprising a first photoresist material, the core having a bottom surface on a substrate, a top surface and opposite first and second side surfaces between the top surface and the bottom surface; and a shell comprising a second photoresist material, the shell on the top surface of the substrate, the shell containing a cavity open to the top surface of the substrate, the shell formed over the top surface and the first and second side surfaces walls of the core, the core completely filling the cavity. The core is stiffer than the shell. The method includes: forming the core from a first photoresist layer and forming the shell from a second photoresist layer applied over the core. The core may be cross-linked to increase its stiffness.
    Type: Application
    Filed: May 17, 2007
    Publication date: November 20, 2008
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Colin J. Brodsky, Allen H. Gabor, Javier Perez
  • Patent number: 7454302
    Abstract: A method, system and a computer program product for inspecting integrated circuit chips during fabrication. The method including: selecting an integrated circuit chip at a selected level of fabrication; determining coordinates of potential failures of the integrated circuit chip based on one or more risk of failure analyses performed ancillary to fabrication of the integrated circuit chip; automatically generating one or more enhanced defect inspection regions for inspecting the integrated circuit chip based on the coordinates; automatically selecting one or more enhanced defect inspection parameters for each of the enhanced defect inspection regions based on the one or more risk of failure analyses; and generating an enhanced defect inspection recipe, the enhanced defect inspection recipe including a location on the integrated circuit chip, an enhanced defect inspection parameter and a value for the enhanced defect inspection parameter for each of the one or more enhanced defect inspection regions.
    Type: Grant
    Filed: October 15, 2007
    Date of Patent: November 18, 2008
    Assignee: International Business Machines Corporation
    Inventors: Colin J. Brodsky, MaryJane Brodsky
  • Publication number: 20080213707
    Abstract: An antireflective coating that contains at least two polymer components and comprises chromophore moieties and transparent moieties is provided. The antireflective coating is useful for providing a single-layer composite graded antireflective coating formed beneath a photoresist layer.
    Type: Application
    Filed: March 5, 2008
    Publication date: September 4, 2008
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Colin J. Brodsky, Sean D. Burns, Dario L. Goldfarb, Michael Lercel, David R. Medeiros, Dirk Pfeiffer, Daniel P. Sanders, Steven A. Scheer, Libor Vyklicky
  • Publication number: 20080154420
    Abstract: A method of controlling one or more critical dimension (CD) features, dependent upon at least a first and a second processing parameter, with a single metrology step, while still enabling decoupled feedback to the first and the second processing parameter, includes an initial process characterization; producing a production piece; a single metrology step to determine the critical dimensions of the produced features; solving a system of equations simultaneously for individual feedback correction values for the first and second processing parameters; and applying the individual feedback correction values to their respective processing parameters.
    Type: Application
    Filed: December 20, 2006
    Publication date: June 26, 2008
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Colin J. Brodsky, Michael M. Crouse, Allen H. Gabor
  • Patent number: 7390616
    Abstract: A method for post lithographic critical dimension shrinking of a patterned semiconductor feature includes forming an overcoat layer over a patterned photoresist layer, and removing portions of the overcoat layer initially formed over top surfaces of the patterned photoresist layer. The remaining portions of the overcoat layer on sidewalls of said patterned photoresist layer are reacted so as to chemically bind the remaining portions of the overcoat layer on the sidewalls.
    Type: Grant
    Filed: January 12, 2005
    Date of Patent: June 24, 2008
    Assignee: International Business Machines Corporation
    Inventor: Colin J. Brodsky
  • Patent number: 7354779
    Abstract: Methods for applying topographically compensated film in a semiconductor wafer fabrication process are disclosed. The processes include premapping a surface of a wafer so as to determine the local topography (e.g., z-height) of the wafer and then applying a variable depth of a film to the wafer, such that the variable depth is modulated based on the local topography of the wafer. The resultant topography of the applied film and wafer is substantially planar (e.g., within approximately 100 nm) across the wafer.
    Type: Grant
    Filed: March 10, 2006
    Date of Patent: April 8, 2008
    Assignee: International Business Machines Corporation
    Inventors: Colin J. Brodsky, Scott J. Bukofsky, Allen H. Gabor
  • Publication number: 20080008955
    Abstract: An antireflective coating that contains at least two polymer components and comprises chromophore moieties and transparent moieties is provided. The antireflective coating is useful for providing a single-layer composite graded antireflective coating formed beneath a photoresist layer.
    Type: Application
    Filed: June 23, 2006
    Publication date: January 10, 2008
    Applicant: International Business Machines Corporation
    Inventors: Colin J. Brodsky, Sean D. Burns, Dario L. Goldfarb, Michael Lercel, David R. Medeiros, Dirk Pfeiffer, Daniel P. Sanders, Steven A. Scheer, Libor Vyklicky
  • Patent number: 7310585
    Abstract: A method and system for inspecting integrated circuit chips during fabrication. The method including: selecting an integrated circuit chip at a selected level of fabrication; determining coordinates of potential failures of the integrated circuit chip based on one or more risk of failure analyses performed ancillary to fabrication of the integrated circuit chip; automatically generating one or more enhanced defect inspection regions for inspecting the integrated circuit chip based on the coordinates; automatically selecting one or more enhanced defect inspection parameters for each of the one or more enhanced defect inspection regions based on the one or more risk of failure analyses; and generating an enhanced defect inspection recipe, the enhanced defect inspection recipe including a location on the integrated circuit chip, an enhanced defect inspection parameter and a value for the enhanced defect inspection parameter for each of the one or more enhanced defect inspection regions.
    Type: Grant
    Filed: May 12, 2005
    Date of Patent: December 18, 2007
    Assignee: International Business Machines Corporation
    Inventors: Colin J. Brodsky, MaryJane Brodsky
  • Patent number: 7288478
    Abstract: A structure and a method for forming the same. The method comprises providing a structure including (a) a hole layer, (b) a BARC (bottom antireflective coating) layer on the top of the hole layer, and (c) a patterned photoresist layer on top of the BARC layer and having a photoresist hole; etching the BARC layer through the photoresist hole to extend the photoresist hole to the hole layer; performing the chemical shrinking process to shrink the extended photoresist hole; and etching the hole layer through the shrunk, extended photoresist hole so as to form a hole in the hole layer.
    Type: Grant
    Filed: July 5, 2005
    Date of Patent: October 30, 2007
    Assignee: International Business Machines Corporation
    Inventors: Todd Christopher Bailey, Colin J. Brodsky, Allen H. Gabor
  • Patent number: 7267863
    Abstract: A film stack and method of forming a film stack are provided in which a first film is disposed on a substrate and a second film has an inner surface disposed on the first film. The second film has a thickness smaller than a reference thickness at which the second film would begin to dewet from the substrate if the second film were disposed directly on the substrate. However, the second film is substantially free of dewetting defects because it is disposed overlying the first film which has a first Hamaker constant having a negative value with respect to the substrate.
    Type: Grant
    Filed: June 30, 2004
    Date of Patent: September 11, 2007
    Assignee: International Business Machines Corporation
    Inventors: Colin J. Brodsky, Wai-Kin Li, Steven A. Scheer
  • Publication number: 20070178404
    Abstract: A method of forming a relief image on a substrate including: applying over a substrate a layer of an antireflective coating; and vacuum processing the antireflective coating. This method reduces the number of pinhole defects present in the antireflective coating.
    Type: Application
    Filed: January 30, 2006
    Publication date: August 2, 2007
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Colin J. Brodsky, Mary Jane Brodsky, Wai-Kin Li, Steven A. Scheer
  • Patent number: 7239371
    Abstract: A method and apparatus are provided for improving the leveling and, consequently, the focusing of a substrate such as a wafer during the photolithography imaging procedure of a semiconductor manufacturing process. The invention performs a pre-scan of the wafer's topography and assigns importance values to different regions of the wafer surface. Exposure focus instructions are calculated based on the topography and importance values of the different regions and the wafer is then scanned and imaged based on the calculated exposure focus instructions.
    Type: Grant
    Filed: October 18, 2005
    Date of Patent: July 3, 2007
    Assignee: International Business Machines Corporation
    Inventors: Bernhard R. Liegl, Colin J. Brodsky, Scott J. Bukofsky, Steven J. Holmes
  • Patent number: 7229936
    Abstract: A method is provided for preparing a substrate for photolithographic patterning. The method includes providing a substrate having at least an exposed rough surface layer including a polymeric material. The rough surface layer has surface features characterized by feature step height varying between about two percent and twenty percent of the minimum photolithographic half-pitch. A layer of photoresist material is then provided over the exposed rough surface layer and patterned.
    Type: Grant
    Filed: May 3, 2004
    Date of Patent: June 12, 2007
    Assignee: International Business Machines Corporation
    Inventors: Colin J. Brodsky, Scott J. Bukofsky, Dario L. Goldfarb, Scott D. Halle
  • Patent number: 7132316
    Abstract: A method of forming a thin film is provided in which a film having a first thickness is deposited over a substrate, wherein the first thickness is greater than a thickness at which the initially deposited film begins to dewet from the substrate. The initially deposited film is then stabilized to form a stabilized film. Thereafter, the stabilized film is then thinned to a second thickness, such that the resulting film now has a smaller thickness than the thickness at which the initially deposited film would begin to dewet from the substrate. However, as a result of the prior stabilization, the reduced thickness film remains free of dewetting defects.
    Type: Grant
    Filed: January 5, 2005
    Date of Patent: November 7, 2006
    Assignee: International Business Machines Corporation
    Inventors: Wai-Kin Li, Colin J. Brodsky, Steven A. Scheer
  • Patent number: 7083898
    Abstract: A structure and a method for forming the same. The method includes providing a structure including (a) a hole layer, and (b) a pattern transfer layer on and in direct physical contact with the hole layer, wherein the pattern transfer layer comprises a pattern transfer layer hole; depositing an acid supply layer on a side wall of the pattern transfer layer hole; transferring acids from the acid supply layer to an acid storage region in the pattern transfer layer abutting the side wall of the pattern transfer layer hole after said depositing is performed; removing the acid supply layer after said transferring is performed; and performing a chemical shrinking process to the pattern transfer layer hole utilizing the acids from the acid storage region after said removing is performed so as to shrink the pattern transfer layer hole.
    Type: Grant
    Filed: July 7, 2005
    Date of Patent: August 1, 2006
    Assignee: International Business Machines Corporation
    Inventors: Todd C. Bailey, Colin J. Brodsky, Allen H. Gabor