Patents by Inventor Cristina TRINGALI
Cristina TRINGALI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240021718Abstract: An HEMT includes a semiconductor body, which includes a semiconductor heterostructure, and a conductive gate region. The gate region includes: a contact region, which is made of a first metal material and contacts the semiconductor body to form a Schottky junction; a barrier region, which is made of a second metal material and is set on the contact region; and a top region, which extends on the barrier region and is made of a third metal material, which has a resistivity lower than the resistivity of the first metal material. The HEMT moreover comprises a dielectric region, which includes at least one front dielectric subregion, which extends over the contact region, delimiting a front opening that gives out onto the contact region; and wherein the barrier region extends into the front opening and over at least part of the front dielectric subregion.Type: ApplicationFiled: September 28, 2023Publication date: January 18, 2024Applicant: STMICROELECTRONICS S.r.l.Inventors: Ferdinando IUCOLANO, Cristina TRINGALI
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Patent number: 11854809Abstract: A manufacturing method of an electronic device includes: forming a drift layer of an N type; forming a trench in the drift layer; forming an edge-termination structure alongside the trench by implanting dopant species of a P type; and forming a depression region between the trench and the edge-termination structure by digging the drift layer. The steps of forming the depression region and the trench are carried out at the same time. The step of forming the depression region comprises patterning the drift layer to form a structural connection with the edge-termination structure having a first slope, and the step of forming the trench comprises etching the drift layer to define side walls of the trench, which have a second slope steeper than the first slope.Type: GrantFiled: December 5, 2022Date of Patent: December 26, 2023Assignee: STMICROELECTRONICS S.r.l.Inventors: Edoardo Zanetti, Simone Rascuna', Mario Giuseppe Saggio, Alfio Guarnera, Leonardo Fragapane, Cristina Tringali
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Patent number: 11799025Abstract: An HEMT includes a semiconductor body, which includes a semiconductor heterostructure, and a conductive gate region. The gate region includes: a contact region, which is made of a first metal material and contacts the semiconductor body to form a Schottky junction; a barrier region, which is made of a second metal material and is set on the contact region; and a top region, which extends on the barrier region and is made of a third metal material, which has a resistivity lower than the resistivity of the first metal material. The HEMT moreover comprises a dielectric region, which includes at least one front dielectric subregion, which extends over the contact region, delimiting a front opening that gives out onto the contact region; and wherein the barrier region extends into the front opening and over at least part of the front dielectric subregion.Type: GrantFiled: December 6, 2019Date of Patent: October 24, 2023Assignee: STMICROELECTRONICS S.r.l.Inventors: Ferdinando Iucolano, Cristina Tringali
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Publication number: 20230099610Abstract: A manufacturing method of an electronic device includes: forming a drift layer of an N type; forming a trench in the drift layer; forming an edge-termination structure alongside the trench by implanting dopant species of a P type; and forming a depression region between the trench and the edge-termination structure by digging the drift layer. The steps of forming the depression region and the trench are carried out at the same time. The step of forming the depression region comprises patterning the drift layer to form a structural connection with the edge-termination structure having a first slope, and the step of forming the trench comprises etching the drift layer to define side walls of the trench, which have a second slope steeper than the first slope.Type: ApplicationFiled: December 5, 2022Publication date: March 30, 2023Applicant: STMICROELECTRONICS S.r.l.Inventors: Edoardo ZANETTI, Simone RASCUNA', Mario Giuseppe SAGGIO, Alfio GUARNERA, Leonardo FRAGAPANE, Cristina TRINGALI
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Patent number: 11545362Abstract: A manufacturing method of an electronic device includes: forming a drift layer of an N type; forming a trench in the drift layer; forming an edge-termination structure alongside the trench by implanting dopant species of a P type; and forming a depression region between the trench and the edge-termination structure by digging the drift layer. The steps of forming the depression region and the trench are carried out at the same time. The step of forming the depression region comprises patterning the drift layer to form a structural connection with the edge-termination structure having a first slope, and the step of forming the trench comprises etching the drift layer to define side walls of the trench, which have a second slope steeper than the first slope.Type: GrantFiled: April 29, 2021Date of Patent: January 3, 2023Assignee: STMICROELECTRONICS S.r.l.Inventors: Edoardo Zanetti, Simone Rascuna', Mario Giuseppe Saggio, Alfio Guarnera, Leonardo Fragapane, Cristina Tringali
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Publication number: 20220199846Abstract: A photovoltaic cell may include a hydrogenated amorphous silicon layer including a n-type doped region and a p-type doped region. The n-type doped region may be separated from the p-type doped region by an intrinsic region. The photovoltaic cell may include a front transparent electrode connected to the n-type doped region, and a rear electrode connected to the p-type doped region. The efficiency may be optimized for indoor lighting values by tuning the value of the H2/SiH4 ratio of the hydrogenated amorphous silicon layer.Type: ApplicationFiled: February 3, 2022Publication date: June 23, 2022Inventors: Cosimo Gerardi, Cristina Tringali, Sebastiano Ravesi, Marina Foti, NoemiGraziana Sparta', Corrado Accardi, Stella Loverso
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Patent number: 11257975Abstract: A photovoltaic cell may include a hydrogenated amorphous silicon layer including a n-type doped region and a p-type doped region. The n-type doped region may be separated from the p-type doped region by an intrinsic region. The photovoltaic cell may include a front transparent electrode connected to the n-type doped region, and a rear electrode connected to the p-type doped region. The efficiency may be optimized for indoor lighting values by tuning the value of the H2/SiH4 ratio of the hydrogenated amorphous silicon layer.Type: GrantFiled: October 23, 2018Date of Patent: February 22, 2022Assignee: STMICROELECTRONICS S.R.L.Inventors: Cosimo Gerardi, Cristina Tringali, Sebastiano Ravesi, Marina Foti, NoemiGraziana Sparta', Corrado Accardi, Stella Loverso
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Publication number: 20210249268Abstract: A manufacturing method of an electronic device includes: forming a drift layer of an N type; forming a trench in the drift layer; forming an edge-termination structure alongside the trench by implanting dopant species of a P type; and forming a depression region between the trench and the edge-termination structure by digging the drift layer. The steps of forming the depression region and the trench are carried out at the same time. The step of forming the depression region comprises patterning the drift layer to form a structural connection with the edge-termination structure having a first slope, and the step of forming the trench comprises etching the drift layer to define side walls of the trench, which have a second slope steeper than the first slope.Type: ApplicationFiled: April 29, 2021Publication date: August 12, 2021Applicant: STMICROELECTRONICS S.r.l.Inventors: Edoardo ZANETTI, Simone RASCUNA', Mario Giuseppe SAGGIO, Alfio GUARNERA, Leonardo FRAGAPANE, Cristina TRINGALI
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Patent number: 11018008Abstract: A manufacturing method of an electronic device includes: forming a drift layer of an N type; forming a trench in the drift layer; forming an edge-termination structure alongside the trench by implanting dopant species of a P type; and forming a depression region between the trench and the edge-termination structure by digging the drift layer. The steps of forming the depression region and the trench are carried out at the same time. The step of forming the depression region comprises patterning the drift layer to form a structural connection with the edge-termination structure having a first slope, and the step of forming the trench comprises etching the drift layer to define side walls of the trench, which have a second slope steeper than the first slope.Type: GrantFiled: December 4, 2018Date of Patent: May 25, 2021Assignee: STMICROELECTRONICS S.r.l.Inventors: Edoardo Zanetti, Simone Rascuná, Mario Giuseppe Saggio, Alfio Guarnera, Leonardo Fragapane, Cristina Tringali
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Publication number: 20210125834Abstract: A method for manufacturing a HEMT device includes forming, on a heterostructure, a dielectric layer, forming a through opening through the dielectric layer, and forming a gate electrode in the through opening. Forming the gate electrode includes forming a sacrificial structure, depositing by evaporation a first gate metal layer layer, carrying out a lift-off of the sacrificial structure, depositing a second gate metal layer by sputtering, and depositing a third gate metal layer. The second gate metal layer layer forms a barrier against the diffusion of metal atoms towards the heterostructure.Type: ApplicationFiled: October 28, 2020Publication date: April 29, 2021Inventors: Ferdinando IUCOLANO, Cristina TRINGALI
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Publication number: 20200194579Abstract: An HEMT includes a semiconductor body, which includes a semiconductor heterostructure, and a conductive gate region. The gate region includes: a contact region, which is made of a first metal material and contacts the semiconductor body to form a Schottky junction; a barrier region, which is made of a second metal material and is set on the contact region; and a top region, which extends on the barrier region and is made of a third metal material, which has a resistivity lower than the resistivity of the first metal material. The HEMT moreover comprises a dielectric region, which includes at least one front dielectric subregion, which extends over the contact region, delimiting a front opening that gives out onto the contact region; and wherein the barrier region extends into the front opening and over at least part of the front dielectric subregion.Type: ApplicationFiled: December 6, 2019Publication date: June 18, 2020Inventors: Ferdinando IUCOLANO, Cristina TRINGALI
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Publication number: 20200168718Abstract: A method for manufacturing an ohmic contact for a HEMT device, comprising the steps of: forming a photoresist layer, on a semiconductor body comprising a heterostructure; forming, in the photoresist layer, an opening, through which a surface region of the semiconductor body is exposed at said heterostructure; etching the surface region of the semiconductor body using the photoresist layer as etching mask to form a trench in the heterostructure; depositing one or more metal layers in said trench and on the photoresist layer; and carrying out a process of lift-off of the photoresist layer.Type: ApplicationFiled: November 26, 2019Publication date: May 28, 2020Inventors: Ferdinando IUCOLANO, Cristina TRINGALI
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Publication number: 20190172715Abstract: A manufacturing method of an electronic device includes: forming a drift layer of an N type; forming a trench in the drift layer; forming an edge-termination structure alongside the trench by implanting dopant species of a P type; and forming a depression region between the trench and the edge-termination structure by digging the drift layer. The steps of forming the depression region and the trench are carried out at the same time. The step of forming the depression region comprises patterning the drift layer to form a structural connection with the edge-termination structure having a first slope, and the step of forming the trench comprises etching the drift layer to define side walls of the trench, which have a second slope steeper than the first slope.Type: ApplicationFiled: December 4, 2018Publication date: June 6, 2019Inventors: Edoardo ZANETTI, Simone RASCUNÁ, Mario Giuseppe SAGGIO, Alfio GUARNERA, Leonardo FRAGAPANE, Cristina TRINGALI
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Publication number: 20190097074Abstract: A photovoltaic cell may include a hydrogenated amorphous silicon layer including a n-type doped region and a p-type doped region. The n-type doped region may be separated from the p-type doped region by an intrinsic region. The photovoltaic cell may include a front transparent electrode connected to the n-type doped region, and a rear electrode connected to the p-type doped region. The efficiency may be optimized for indoor lighting values by tuning the value of the H2/SiH4 ratio of the hydrogenated amorphous silicon layer.Type: ApplicationFiled: October 23, 2018Publication date: March 28, 2019Inventors: Cosimo Gerardi, Cristina Tringali, Sebastiano Ravesi, Marina Foti, NoemiGraziana Sparta', Corrado Accardi, Stella Loverso
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Patent number: 10128396Abstract: A photovoltaic cell may include a hydrogenated amorphous silicon layer including a n-type doped region and a p-type doped region. The n-type doped region may be separated from the p-type doped region by an intrinsic region. The photovoltaic cell may include a front transparent electrode connected to the n-type doped region, and a rear electrode connected to the p-type doped region. The efficiency may be optimized for indoor lighting values by tuning the value of the H2/SiH4 ratio of the hydrogenated amorphous silicon layer.Type: GrantFiled: October 16, 2013Date of Patent: November 13, 2018Assignee: STMICROELECTRONICS S.R.L.Inventors: Cosimo Gerardi, Cristina Tringali, Sebastiano Ravesi, Marina Foti, NoemiGraziana Sparta′, Corrado Accardi, Stella Loverso
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Patent number: 10103281Abstract: A thin film amorphous silicon solar cell may have front contact between a hydrogenated amorphous silicon layer and a transparent conductive oxide layer. The cell may include a layer of a refractory metal, chosen among the group composed of molybdenum, tungsten, tantalum and titanium, of thickness adapted to ensure a light transmittance of at least 80%, interposed therebetween, before growing by PECVD a hydrogenated amorphous silicon p-i-n light absorption layer over it. A refractory metal layer of just about 1 nm thickness may effectively shield the oxide from the reactive plasma, thereby preventing a diffused defect when forming the p.i.n. layer that would favor recombination of light-generated charge carriers.Type: GrantFiled: August 29, 2012Date of Patent: October 16, 2018Assignee: STMICROELECTRONICS S.R.L.Inventors: Salvatore Lombardo, Cosimo Gerardi, Sebastiano Ravesi, Marina Foti, Cristina Tringali, Stella Loverso, Nicola Costa
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Patent number: 9331151Abstract: The present disclosure regards a method for coupling a graphene layer to a substrate having at least one hydrophilic surface, the method comprising the steps of providing the substrate having at least one hydrophilic surface, depositing on the hydrophilic surface a layer of a solvent selected in the group constituted by acetone, ethyl lactate, isopropyl alcohol, methylethyl ketone and mixtures thereof and depositing on the solvent layer a graphene layer. It moreover regards an electronic device comprising the graphene/substrate structure obtained.Type: GrantFiled: June 30, 2015Date of Patent: May 3, 2016Assignee: STMicroelectronics S.r.l.Inventors: Sebastiano Ravesi, Corrado Accardi, Cristina Tringali, Noemi Graziana Sparta′, Stella Loverso, Filippo Giannazzo
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Publication number: 20160079453Abstract: A thin film amorphous silicon solar cell may have front contact between a hydrogenated amorphous silicon layer and a transparent conductive oxide layer. The cell may include a layer of a refractory metal, chosen among the group composed of molybdenum, tungsten, tantalum and titanium, of thickness adapted to ensure a light transmittance of at least 80%, interposed therebetween, before growing by PECVD a hydrogenated amorphous silicon p-i-n light absorption layer over it. A refractory metal layer of just about 1 nm thickness may effectively shield the oxide from the reactive plasma, thereby preventing a diffused defect when forming the p.i.n. layer that would favor recombination of light-generated charge carriers.Type: ApplicationFiled: November 23, 2015Publication date: March 17, 2016Inventors: SALVATORE LOMBARDO, COSIMO GERARDI, SEBASTIANO RAVESI, MARINA FOTI, CRISTINA TRINGALI, STELLA LOVERSO, NICOLA COSTA
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Publication number: 20150303264Abstract: The present disclosure regards a method for coupling a graphene layer to a substrate having at least one hydrophilic surface, the method comprising the steps of providing the substrate having at least one hydrophilic surface, depositing on the hydrophilic surface a layer of a solvent selected in the group constituted by acetone, ethyl lactate, isopropyl alcohol, methylethyl ketone and mixtures thereof and depositing on the solvent layer a graphene layer. It moreover regards an electronic device comprising the graphene/substrate structure obtained.Type: ApplicationFiled: June 30, 2015Publication date: October 22, 2015Inventors: Sebastiano Ravesi, Corrado Accardi, Cristina Tringali, Noemi Graziana Sparta', Stella Loverso, Filippo Giannazzo
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Patent number: 9099305Abstract: The present disclosure regards a method for coupling a graphene layer to a substrate having at least one hydrophilic surface, the method comprising the steps of providing the substrate having at least one hydrophilic surface, depositing on the hydrophilic surface a layer of a solvent selected in the group constituted by acetone, ethyl lactate, isopropyl alcohol, methylethyl ketone and mixtures thereof and depositing on the solvent layer a graphene layer. It moreover regards an electronic device comprising the graphene/substrate structure obtained.Type: GrantFiled: April 29, 2014Date of Patent: August 4, 2015Assignee: STMicroelectronics S.r.l.Inventors: Noemi Graziana Sparta', Cristina Tringali, Stella Loverso, Sebastiano Ravesi, Corrado Accardi, Filippo Giannazzo