Patents by Inventor Curtiss Hella

Curtiss Hella has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Surface acoustic wave filter with a cap layer for improved reliability
    Patent number: 9973169
    Abstract: Embodiments of a Surface Acoustic Wave (SAW) device, or filter, and methods of fabrication thereof are disclosed. In some embodiments, the SAW filter comprises a piezoelectric substrate and an Interdigitated Transducer (IDT) on a surface of the piezoelectric substrate. The IDT includes multiple fingers, each comprising a metal stack. The SAW filter further includes a cap layer on a surface of the IDT opposite the piezoelectric substrate and on areas of the surface of the piezoelectric substrate exposed by the IDT. The cap layer has a thickness in a range of and including 10 to 500 Angstroms and a high electrical resistivity (and thus a low electrical conductivity). For instance, in some embodiments, the electrical resistivity of the cap layer is greater than 10 kilo-ohm meters (K?·m). The SAW filter further includes an oxide overcoat layer on a surface of the cap layer opposite the IDT and the piezoelectric substrate.
    Type: Grant
    Filed: November 30, 2015
    Date of Patent: May 15, 2018
    Assignee: Qorvo US, Inc.
    Inventors: Kurt G. Steiner, Curtiss Hella, Benjamin P. Abbott, Daniel Chesire, Chad Thompson, Alan S. Chen
  • TCSAW WITH IMPROVED RELIABILITY
    Publication number: 20170099042
    Abstract: Embodiments of a Surface Acoustic Wave (SAW) device, or filter, and methods of fabrication thereof are disclosed. In some embodiments, the SAW filter comprises a piezoelectric substrate and an Interdigitated Transducer (IDT) on a surface of the piezoelectric substrate. The IDT includes multiple fingers, each comprising a metal stack. The SAW filter further includes a cap layer on a surface of the IDT opposite the piezoelectric substrate and on areas of the surface of the piezoelectric substrate exposed by the IDT. The cap layer has a thickness in a range of and including 10 to 500 Angstroms and a high electrical resistivity (and thus a low electrical conductivity). For instance, in some embodiments, the electrical resistivity of the cap layer is greater than 10 kilo-ohm meters (K?·m). The SAW filter further includes an oxide overcoat layer on a surface of the cap layer opposite the IDT and the piezoelectric substrate.
    Type: Application
    Filed: November 30, 2015
    Publication date: April 6, 2017
    Inventors: Kurt G. Steiner, Curtiss Hella, Benjamin P. Abbott, Daniel Chesire, Chad Thompson, Alan S. Chen
  • Methods, systems, and apparatuses for temperature compensated surface acoustic wave device
    Patent number: 9331667
    Abstract: Embodiments described herein may provide a temperature-compensated surface acoustic wave (TCSAW) device, a method of fabricating a TCSAW device, and a system incorporating a TCSAW device. The TCSAW device may include a pyroelectric substrate, a plurality of electrodes formed on a first surface of the pyroelectric substrate, an amorphous silicon layer formed over the plurality of electrodes, and a temperature compensating layer formed over the amorphous silicon layer.
    Type: Grant
    Filed: July 21, 2014
    Date of Patent: May 3, 2016
    Assignee: TriQuint Semiconductor, Inc.
    Inventors: Kurt Steiner, Curtiss Hella, Benjamin P. Abbott, Daniel Chesire, Chad Thompson, Alan S. Chen
  • METHODS, SYSTEMS, AND APPARATUSES FOR TEMPERATURE COMPENSATED SURFACE ACOUSTIC WAVE DEVICE
    Publication number: 20160020747
    Abstract: Embodiments described herein may provide a temperature-compensated surface acoustic wave (TCSAW) device, a method of fabricating a TCSAW device, and a system incorporating a TCSAW device. The TCSAW device may include a pyroelectric substrate, a plurality of electrodes formed on a first surface of the pyroelectric substrate, an amorphous silicon layer formed over the plurality of electrodes, and a temperature compensating layer formed over the amorphous silicon layer.
    Type: Application
    Filed: July 21, 2014
    Publication date: January 21, 2016
    Inventors: Kurt Steiner, Curtiss Hella, Benjamin P. Abbott, Daniel Chesire, Chad Thompson, Alan S. Chen