Abstract: A method of measuring thickness of a material generally includes transmitting an oscillating signal from a first pad, through the material, to a second pad, and measuring the signal reflected back to the first pad. The material may be homogenous or heterogeneous, and has dielectric properties. The signal has its frequency varied over time so that the frequency response of the system (the first pad, the material, and the second pad) may be analyzed. The resonant frequency of the system is determined. The thickness of the material is determined based on the resonant frequency shift caused by a change in thickness of the material. The present invention may be advantageously employed to measure the thickness of a vehicle tire or other material. Related apparatuses are also disclosed.

Abstract: Expandable docking stations for docking an expandable valve can include a valve seat, one or more sealing portions, and one or more retaining portions. The valve seat can be unexpandable or substantially unexpandable beyond a deployed size. The one or more sealing portions are connected to the valve seat and extend radially outward of the valve seat. The one or more sealing portions are constructed to expand outward of the valve seat and provide a seal over a range of sizes. The one or more retaining portions are connected to the one or more sealing portions. The one or more retaining portions are configured to retain the docking station at a deployed position.

Abstract: In an aspect of the present invention, a graphene field-effect transistor (GFET) structure is formed. The GFET structure comprises a wider portion and a narrow extension portion extending from the wider portion that includes one or more graphene layers edge contacted to source and drain contacts, wherein the source and drain contacts are self-aligned to the one or more graphene layers.

Abstract: Method for delivering an expandable member to a treatment location includes an elongate shaft and an expandable member coupled to a distal end of the elongate shaft. Embodiments of the expandable member are moveable between a collapsed configuration and an expanded configuration, and have an inner expandable member and a plurality of outer expandable members that at least partially surround the inner expandable member, and are suitable for delivering prosthetic heart valves and performing vavuloplasties.

Abstract: In an aspect of the present invention, a graphene field-effect transistor (GFET) structure is formed. The GFET structure comprises a wider portion and a narrow extension portion extending from the wider portion that includes one or more graphene layers edge contacted to source and drain contacts, wherein the source and drain contacts are self-aligned to the one or more graphene layers.

Abstract: A carbon nanotube semiconductor device includes at least one carbon nanotube disposed on an insulator portion of a substrate. The at least one carbon nanotube includes a non-doped channel portion interposed between a first doped source/drain portion and a second doped source/drain portion. A first source/drain contact stack is disposed on the first doped source/drain portion and an opposing second source/drain contact stack is disposed on the second doped source/drain portion. A replacement metal gate stack is interposed between the first and second source/drain contact stacks, and on the at least one carbon nanotube. The first and second doped source/drain portions are each vertically aligned with an inner edge of the first and second contact stacks, respectively.

Abstract: A carbon nanotube semiconductor device includes at least one carbon nanotube disposed on an insulator portion of a substrate. The at least one carbon nanotube includes a non-doped channel portion interposed between a first doped source/drain portion and a second doped source/drain portion. A first source/drain contact stack is disposed on the first doped source/drain portion and an opposing second source/drain contact stack is disposed on the second doped source/drain portion. A replacement metal gate stack is interposed between the first and second source/drain contact stacks, and on the at least one carbon nanotube. The first and second doped source/drain portions are each vertically aligned with an inner edge of the first and second contact stacks, respectively.

Abstract: A carbon nanotube semiconductor device includes at least one carbon nanotube disposed on an insulator portion of a substrate. The at least one carbon nanotube includes a non-doped channel portion interposed between a first doped source/drain portion and a second doped source/drain portion. A first source/drain contact stack is disposed on the first doped source/drain portion and an opposing second source/drain contact stack is disposed on the second doped source/drain portion. A replacement metal gate stack is interposed between the first and second source/drain contact stacks, and on the at least one carbon nanotube. The first and second doped source/drain portions are each vertically aligned with an inner edge of the first and second contact stacks, respectively.

Abstract: A carbon nanotube semiconductor device includes at least one carbon nanotube disposed on an insulator portion of a substrate. The at least one carbon nanotube includes a non-doped channel portion interposed between a first doped source/drain portion and a second doped source/drain portion. A first source/drain contact stack is disposed on the first doped source/drain portion and an opposing second source/drain contact stack is disposed on the second doped source/drain portion. A replacement metal gate stack is interposed between the first and second source/drain contact stacks, and on the at least one carbon nanotube. The first and second doped source/drain portions are each vertically aligned with an inner edge of the first and second contact stacks, respectively.

Abstract: In an aspect of the present invention, a graphene field-effect transistor (GFET) structure is formed. The GFET structure comprises a wider portion and a narrow extension portion extending from the wider portion that includes one or more graphene layers edge contacted to source and drain contacts, wherein the source and drain contacts are self-aligned to the one or more graphene layers.

Abstract: In one embodiment, SWNTs are synthesized from an embedded catalyst in a modified porous anodic alumina (PAA) template. Pd is electrodeposited into the template to form nanowires that grow from an underlying conductive layer beneath the PAA and extend to the initiation sites of the SWNTs within each pore. Individual vertical channels of SWNTs are created, each with a vertical Pd nanowire back contact. Further Pd deposition results in annular Pd nanoparticles that form on portions of SWNTs extending onto the PAA surface. Two-terminal electrical characteristics produce linear I-V relationships, indicating ohmic contact in the devices.

Abstract: In one embodiment, a multilayer graphene structure includes a first layer of graphene, a second layer of graphene; and an interstitial layer bonding the first layer of graphene to the second layer of graphene, wherein the interstitial layer comprises a polyaromatic compound. In another embodiment, a multilayer graphene structure is fabricated by providing a first layer of graphene, providing a second layer of graphene, and providing a first interstitial layer between the first layer of graphene and the second layer of graphene, wherein the first interstitial layer comprises a polyaromatic compound. In another embodiment, a multilayer graphene structure includes a plurality of layers of graphene and a plurality of interstitial layers formed of at least one polyaromatic compound, where each pair of the layers of graphene is bonded by one of the interstitial layers, such that a structure comprising alternating layers of graphene and interstitial layers is formed.

Abstract: In one embodiment, a multilayer graphene structure includes a first layer of graphene, a second layer of graphene; and an interstitial layer bonding the first layer of graphene to the second layer of graphene, wherein the interstitial layer comprises a polyaromatic compound. In another embodiment, a multilayer graphene structure is fabricated by providing a first layer of graphene, providing a second layer of graphene, and providing a first interstitial layer between the first layer of graphene and the second layer of graphene, wherein the first interstitial layer comprises a polyaromatic compound. In another embodiment, a multilayer graphene structure includes a plurality of layers of graphene and a plurality of interstitial layers formed of at least one polyaromatic compound, where each pair of the layers of graphene is bonded by one of the interstitial layers, such that a structure comprising alternating layers of graphene and interstitial layers is formed.

Abstract: Apparatuses and methods for memory testing with data compression is described. An example apparatus includes a plurality of latch test circuits, wherein each of the plurality of latch test circuits is coupled to a corresponding global data line of a memory. Each of the latch test circuits is configured to receive test data and is configured to latch data from the corresponding global data line or a corresponding mask bit. Each of the plurality of latch test circuits is further configured to output data based at least in part on the corresponding mask bit. A comparison circuit is coupled to an output of each of the latch test circuits and is configured to compare output data provided by each of the latch test circuits and provide a comparator output having a logical value indicative of whether all the output data matches.

Abstract: A technique is provided for forming a nanodevice for sequencing. A bottom metal contact is disposed at a location in an insulator that is on a substrate. A nonconducting material is disposed on top of the bottom metal contact and the insulator. A carbon nanotube is disposed on top of the nonconducting material. Top metal contacts are disposed on top of the carbon nanotube at the location of the bottom metal contact, where the top metal contacts are formed at opposing ends of the carbon nanotube at the location. The carbon nanotube is suspended over the bottom metal contact at the location, by etching away the nonconducting material under the carbon nanotube to expose the bottom metal contact as a bottom of a trench, while leaving the nonconducting material immediately under the top metal contacts as walls of the trench.

Abstract: A delivery system for stabilizing a catheter shaft across an aortic arch can include one or more stabilizing members configured to fix or stabilize the position of the catheter relative to the aortic arch of a patient.

Abstract: In an aspect of the present invention, a graphene field-effect transistor (GFET) structure is formed. The GFET structure comprises a wider portion and a narrow extension portion extending from the wider portion that includes one or more graphene layers edge contacted to source and drain contacts, wherein the source and drain contacts are self-aligned to the one or more graphene layers.