Abstract: Forming an NVM structure includes forming a floating gate layer; forming a first dielectric layer over the floating gate layer; forming a plurality of nanocrystals over the first dielectric layer; etching the first dielectric layer using the plurality of nanocrystals as a mask to form dielectric structures, wherein the floating gate layer is exposed between adjacent dielectric structures; etching a first depth into the floating gate layer using the plurality of dielectric structures as a mask to form a plurality of patterned structures, wherein the first depth is less than a thickness of the floating gate layer; patterning the floating gate layer to form a floating gate; forming a second dielectric layer over the floating gate, wherein the second dielectric layer is formed over the patterned structures and on the floating gate layer between adjacent patterned structures; and forming a control gate layer over the second dielectric layer.

Abstract: An electronic device includes a chassis, a mounting assembly, and an assisting member. The mounting assembly is secured to the chassis and includes a circuit board and a connector secured to the circuit board. The signal module is secured to the chassis and includes a signal card, and the signal card is engaged with the connector. The assisting member is secured to a first end of the mounting assembly and includes an assisting corner. The assisting corner abuts the signal module. The connector is located between the assisting corner and a second end of the mounting assembly, which is opposite to the first end. The second end rotates about the assisting corner, and the connector disengages from the signal card when the second end is rotated about the assisting corner.

Abstract: A power supply includes first connecting board, a second connecting board and a conductive module. Three adapters are located on the first connecting board. The three adapters connect with power supply via three anodes and three cathodes. A connector is located on the second connecting board and configured to output power. The conductive module includes a first bus bar and a second bus bar. The first bus bar includes three input terminals and an output terminal. The second bus bard includes three input terminals and an output terminal The three input terminals of the first bus bar are electrically connected to the three anodes of the three adapters. The three input terminals of the second bus bar are electrically connected to the three cathodes of the three adapters. The output terminals of the first bus bar and the second bus bar are electrically connected to the second connecting board.

Abstract: A transistor structure is formed by providing a semiconductor substrate and providing a gate above the semiconductor substrate. The gate is separated from the semiconductor substrate by a gate insulating layer. A source and a drain are provided adjacent the gate to define a transistor channel underlying the gate and separated from the gate by the gate insulating layer. A barrier layer is formed by applying nitrogen or carbon on opposing outer vertical sides of the transistor channel between the transistor channel and each of the source and the drain. In each of the nitrogen and the carbon embodiments, the vertical channel barrier retards diffusion of the source/drain dopant species into the transistor channel. There are methods for forming the transistor structure.

Abstract: A method and structure implant a first-type impurity within a substrate to form a channel region within the substrate adjacent a top surface of the substrate; form a gate stack on the top surface of the substrate above the channel region; and implant a second-type impurity within the substrate to form source and drain regions within the substrate adjacent the top surface. The channel region is positioned between the source and drain regions. The second-type impurity has an opposite polarity with respect to the first-type impurity. The method and structure implant a greater concentration of the first-type impurity, relative to a concentration of the first-type impurity within the channel region, to form a primary body doping region within the substrate below (relative to the top surface) the channel region; and to form secondary body doping regions within the substrate below (relative to the top surface) the source and drain regions.

Abstract: A method and structure implant a first-type impurity within a substrate to form a channel region within the substrate adjacent a top surface of the substrate; form a gate stack on the top surface of the substrate above the channel region; and implant a second-type impurity within the substrate to form source and drain regions within the substrate adjacent the top surface. The channel region is positioned between the source and drain regions. The second-type impurity has an opposite polarity with respect to the first-type impurity. The method and structure implant a greater concentration of the first-type impurity, relative to a concentration of the first-type impurity within the channel region, to form a primary body doping region within the substrate below (relative to the top surface) the channel region; and to form secondary body doping regions within the substrate below (relative to the top surface) the source and drain regions.

Abstract: In a method and apparatus for correcting distortion during magnetic resonance imaging k space data in a number of readout encoding directions, sampling points on the phase encoding lines are primarily in low frequency regions of k space and the number of such sampling points is less than that of all sampling points. A view angle tilting compensation gradient is superimposed on the axis of a layer selection gradient. The k space data acquired from the number of directions are then combined.

Abstract: An integrated circuit structure includes a substrate and at least one pair of complementary transistors on or in the substrate. The pair of complementary transistors comprises a first transistor and a second transistor. The structure also includes a first stress-producing layer on the first transistor and the second transistor, and a second stress-producing layer on the first stress-producing layer over the first transistor and the second transistor. The first stress-producing layer applies tensile strain force on the first transistor and the second transistor. The second stress-producing layer applies compressive strain force on the first stress-producing layer, the first transistor, and the second transistor.

Abstract: The present invention discloses a method and apparatus for measuring the temperature field on the surface of casting billet/slab, including: a thermal imager, an infrared radiation thermometer, a mechanical scanning unit, an image and data processing system; the thermal imager, the infrared radiation thermometer and the mechanical scanning unit are respectively connected to the image and data processing system; the infrared radiation thermometer is installed on the mechanical scanning unit and can measure the temperature of casting billet/slab surface by scanning; the thermal imager can measure the temperature of a certain area on the surface of casting billet/slab by thermal imaging.

Abstract: Different circuit-based implementations of stochastic anti-windup PI controllers are provided for a motor drive controller system. The designs can be implemented in a Field Programmable Gate Arrays (FPGA) device. The anti-windup PI controllers are implemented stochastically so as to enhance the computational capability of FPGA.

Abstract: A semiconductor fabrication process includes masking a first region, e.g., an NMOS region, of a semiconductor wafer, e.g., a biaxial, tensile strained silicon on insulator (SOI) wafer and creating recesses in source/drain regions of a second wafer region, e.g., a PMOS region. The wafer is then annealed in an ambient that promotes migration of silicon. The source/drain recesses are filled with source/drain structures, e.g., by epitaxial growth. The anneal ambient may include a hydrogen bearing species, e.g., H2 or GeH2, maintained at a temperature in the range of approximately 800 to 1000° C. The second region may be silicon and the source/drain structures may be silicon germanium. Creating the recesses may include creating shallow recesses with a first etch process, performing an amorphizing implant to create an amorphous layer, performing an inert ambient anneal to recrystallize the amorphous layer, and deepening the shallow recesses with a second etch process.

Abstract: A semiconductor process and apparatus includes forming NMOS and PMOS transistors (24, 34) with enhanced hole mobility in the channel region of a transistor by selectively relaxing part of a biaxial-tensile strained semiconductor layer (90) in a PMOS device area (97) to form a relaxed semiconductor layer (91), and then epitaxially growing a bi-axially stressed silicon germanium channel region layer (22) prior to forming the NMOS and PMOS gate structures (26, 36) overlying the channel regions, and then depositing a contact etch stop layer (53-56) over the NMOS and PMOS gate structures. Embedded silicon germanium source/drain regions (84) may also be formed adjacent to the PMOS gate structure (70) to provide an additional uni-axial stress to the bi-axially stressed channel region.

Abstract: An apparatus and method for boosting output of a generator set are provided. The output of the generator set is connected to an electrical load. The apparatus includes an energy storage unit, and a power-electronic unit. The energy storage unit uses batteries and capacitors to store electric energy. The power-electronic unit measures an electrical parameter of the output of the generator set. Based on the measured electrical parameter and a predefined criterion, the power-electronic unit determines additional energy required by the electrical load. Thereafter, the power-electronic unit supplies the additional energy to the electrical load. The additional energy is drawn from the energy storage unit.

Abstract: A method and structure implant a first-type impurity within a substrate to form a channel region within the substrate adjacent a top surface of the substrate; form a gate stack on the top surface of the substrate above the channel region; and implant a second-type impurity within the substrate to form source and drain regions within the substrate adjacent the top surface. The channel region is positioned between the source and drain regions. The second-type impurity has an opposite polarity with respect to the first-type impurity. The method and structure implant a greater concentration of the first-type impurity, relative to a concentration of the first-type impurity within the channel region, to form a primary body doping region within the substrate below (relative to the top surface) the channel region; and to form secondary body doping regions within the substrate below (relative to the top surface) the source and drain regions.

Abstract: An integrated circuit structure includes a substrate and at least one pair of complementary transistors on or in the substrate. The pair of complementary transistors comprises a first transistor and a second transistor. The structure also includes a first stress-producing layer on the first transistor and the second transistor, and a second stress-producing layer on the first stress-producing layer over the first transistor and the second transistor. The first stress-producing layer applies tensile strain force on the first transistor and the second transistor. The second stress-producing layer applies compressive strain force on the first stress-producing layer, the first transistor, and the second transistor.

Abstract: A transistor structure is formed by providing a semiconductor substrate and providing a gate above the semiconductor substrate. The gate is separated from the semiconductor substrate by a gate insulating layer. A source and a drain are provided adjacent the gate to define a transistor channel underlying the gate and separated from the gate by the gate insulating layer. A barrier layer is formed by applying nitrogen or carbon on opposing outer vertical sides of the transistor channel between the transistor channel and each of the source and the drain. In each of the nitrogen and the carbon embodiments, the vertical channel barrier retards diffusion of the source/drain dopant species into the transistor channel. There are methods for forming the transistor structure.

Abstract: The present invention relates to a process for resolving S-3-(Aminomethyl)-5-methylhexanoic acid, which adopts benzoyl-L-glutamic acid, 4-methyl benzoyl-L-glutamic acid, benzene sulfonyl-L-glutamic acid or 4-methyl benzene sulfonyl-L-glutamic acid as a resolution agent to make a first resolution to racemic 3-aminomethyl-5-methylhexanoic acid, and adopts the resolution agent same to that of the first resolution to make a second resolution to the first resolution product to obtain the second resolution product, thus the resolution salt product is obtained, and further hydrolyzed by an acid, the resolution agent is extracted to be separated, the pH is adjusted to be neutral, the product S-3-(Aminomethyl)-5-methylhexanoic acid, i.e.

Abstract: A transistor structure is formed by providing a semiconductor substrate and providing a gate above the semiconductor substrate. The gate is separated from the semiconductor substrate by a gate insulating layer. A source and a drain are provided adjacent the gate to define a transistor channel underlying the gate and separated from the gate by the gate insulating layer. A barrier layer is formed by applying nitrogen or carbon on opposing outer vertical sides of the transistor channel between the transistor channel and each of the source and the drain. In each of the nitrogen and the carbon embodiments, the vertical channel barrier retards diffusion of the source/drain dopant species into the transistor channel. There are methods for forming the transistor structure.

Abstract: An apparatus for measuring the liquid level of molten metal comprises an image measuring device (5), a measuring probe (6), a lifting mechanism (1), a displacement sensor (11), an data processing system (4) and a correction marker(7). The lifting mechanism (1) is fixed to the molten metal container (10) or is independent of the molten metal container, the image measuring device (5) and the measuring probe (6) are installed on the lifting mechanism (1) or are independent of the lifting mechanism, and the optical axis of the image measuring device (5) is set at an angle with the geometric axis of the measuring probe (6), the measuring probe (6) is located within the field of view of the image measuring device (5), the image measuring device (5), the lifting mechanism (1) and the displacement sensor (11) are connected to the data processing system (4) respectively. A method for measuring the level of molten metal is also disclosed.

Abstract: A semiconductor process and apparatus includes forming <100> channel orientation CMOS transistors (24, 34) with enhanced hole mobility in the NMOS channel region and reduced channel defectivity in the PMOS region by depositing a first tensile etch stop layer (51) over the PMOS and NMOS gate structures, etching the tensile etch stop layer (51) to form tensile sidewall spacers (62) on the exposed gate sidewalls, and then depositing a second hydrogen rich compressive or neutral etch stop layer (72) over the NMOS and PMOS gate structures (26, 36) and the tensile sidewall spacers (62). In other embodiments, a first hydrogen-rich etch stop layer (81) is deposited and etched to form sidewall spacers (92) on the exposed gate sidewalls, and then a second tensile etch stop layer (94) is deposited over the NMOS and PMOS gate structures (26, 36) and the sidewall spacers (92).