Patents by Inventor Dae K. Kang

Dae K. Kang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5219777
    Abstract: A MOSFET comprising a substrate of a first conductivity type, a gate located on the substrate, a channel region of the first conductivity type located beneath a surface portion of the substrate corresponding to a region defined beneath said gate, low concentration and high concentration source regions of a second conductivity type located beneath a surface portion of the substrate corresponding to one of opposite sides of said channel region, and low concentration and high concentration drain regions of the second conductivity type located beneath a surface portion of the substrate corresponding to the other of opposite sides of the channel region. A pair of first impurity regions of the first conductivity type are located to surround said second conductivity type low concentration source region and said second conductivity type low concentration drain region respectively.
    Type: Grant
    Filed: June 11, 1992
    Date of Patent: June 15, 1993
    Assignee: Gold Star Electron Co., Ltd.
    Inventor: Dae K. Kang