Patents by Inventor Dae-Woong Kang

Dae-Woong Kang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210287525
    Abstract: The present invention provides a method for learning latest data considering external influences in an early warning system, and the early warning system for same. The method for learning latest data considering external influences comprises the steps of: an early warning processing device categorizing device monitored variables according to external influences; and the early warning processing device differently applying a pattern learning method for each of the categorized monitored variables.
    Type: Application
    Filed: August 29, 2017
    Publication date: September 16, 2021
    Applicant: Korea Hydro & Nuclear Co., Ltd
    Inventors: Dae Woong KIM, Nam Woo CHOI, Bum Nyun KIM, Hyoung Kyun KIM, Ji In KIM, Ju Hyung KANG, Yong Hoon PARK, Gun Woong SHIN, Yang Seok KIM, Young Sheop PARK, Chi Yong PARK, Byoung Oh LEE, Jong Seog KIM
  • Patent number: 10517572
    Abstract: Provided are an ultrasound imaging apparatus including a probe and a method of controlling the ultrasound imaging apparatus. The method includes: comparing a signal value acquired through an input unit with first and second threshold values; and performing an operation that is determined based on a result of the comparison.
    Type: Grant
    Filed: February 27, 2015
    Date of Patent: December 31, 2019
    Assignee: Samsung Medison Co., Ltd.
    Inventors: Dae-woong Kang, Kyung-dong Kim
  • Publication number: 20190343486
    Abstract: Provided are an ultrasound imaging apparatus and a method of processing an ultrasound image. The ultrasound imaging apparatus includes a display configured to display a moving image consisting of a plurality of ultrasound images that are played back according to a time order together with at least one icon, corresponding to at least one piece of change information for changing a display of at least one of the plurality of ultrasound images, in association with the time order.
    Type: Application
    Filed: July 10, 2019
    Publication date: November 14, 2019
    Applicant: Samsung Medison Co., Ltd.
    Inventors: Tae-jin PARK, Dae-woong Kang, Yea-chan Choi
  • Patent number: 10376239
    Abstract: Provided are an ultrasound imaging apparatus and a method of processing an ultrasound image. The ultrasound imaging apparatus includes a display configured to display a moving image consisting of a plurality of ultrasound images that are played back according to a time order together with at least one icon, corresponding to at least one piece of change information for changing a display of at least one of the plurality of ultrasound images, in association with the time order.
    Type: Grant
    Filed: November 23, 2015
    Date of Patent: August 13, 2019
    Assignee: SAMSUNG MEDISON CO., LTD.
    Inventors: Tae-jin Park, Dae-woong Kang, Yea-chan Choi
  • Publication number: 20160183923
    Abstract: Provided are an ultrasound imaging apparatus and a method of processing an ultrasound image. The ultrasound imaging apparatus includes a display configured to display a moving image consisting of a plurality of ultrasound images that are played back according to a time order together with at least one icon, corresponding to at least one piece of change information for changing a display of at least one of the plurality of ultrasound images, in association with the time order.
    Type: Application
    Filed: November 23, 2015
    Publication date: June 30, 2016
    Applicant: SAMSUNG MEDISON CO., LTD.
    Inventors: Tae-jin PARK, Dae-woong KANG, Yea-chan CHOI
  • Patent number: 9258493
    Abstract: An ultrasound data relaying method is performed by an ultrasound data relaying apparatus. According to the method, user information is received from a mobile terminal connected to the ultrasound data relaying apparatus. Ultrasound photographing information is received from an ultrasound diagnosis apparatus. The ultrasound photographing information is transmitted to the mobile terminal based on the received user information.
    Type: Grant
    Filed: December 17, 2012
    Date of Patent: February 9, 2016
    Assignee: SAMSUNG MEDISON CO., LTD.
    Inventor: Dae-woong Kang
  • Publication number: 20150253977
    Abstract: Provided are medical imaging method and apparatus for providing guide information, which allow a user to easily use the guide information provided by the medical imaging apparatus. A method of providing guide information in a medical imaging system includes: transmitting, by the external device, a request for a guide to the medical imaging apparatus; determining, by the medical imaging apparatus, guide information corresponding to the request for the guide; transmitting, by the medical imaging apparatus, the determined guide information to the external device; and displaying the guide information by the external device.
    Type: Application
    Filed: November 5, 2014
    Publication date: September 10, 2015
    Inventor: Dae-woong KANG
  • Publication number: 20150245821
    Abstract: Provided are an ultrasound imaging apparatus including a probe and a method of controlling the ultrasound imaging apparatus. The method includes: comparing a signal value acquired through an input unit with first and second threshold values; and performing an operation that is determined based on a result of the comparison.
    Type: Application
    Filed: February 27, 2015
    Publication date: September 3, 2015
    Inventors: Dae-woong KANG, Kyung-dong KIM
  • Patent number: 8436410
    Abstract: Semiconductor devices are provided. The semiconductor devices may include a plurality of gate structures disposed on a semiconductor substrate, each of the gate structures including a floating gate, an inter-gate dielectric layer, and a control gate. The semiconductor devices may also include liners on opposing sidewalls of adjacent ones of the gate structures. The liners may define a gap. A first width of the gap may be less than a second width of the gap.
    Type: Grant
    Filed: March 17, 2011
    Date of Patent: May 7, 2013
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Dae-Woong Kang, Sung-Nam Chang, Jin-Joo Kim, Kyong-Joo Lee, Eun-Jung Lee
  • Patent number: 8362542
    Abstract: Semiconductor devices including a plurality of gate structures disposed on a semiconductor substrate are provided. Each of the gate structures includes a tunnel dielectric layer, a floating gate, an inter-gate dielectric layer, a control gate, and a mask layer. Liners cover opposing sidewalls of adjacent floating gates. Spacers are disposed on the liners, the spacers protruding from opposing sidewalls of adjacent ones of the gate structures, and a top of each of the spacers is disposed below a top of a corresponding one of the gate structures. The liners define sidewalls of respective air gaps and the spacers define tops of the respective air gaps.
    Type: Grant
    Filed: July 30, 2010
    Date of Patent: January 29, 2013
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Dae-Woong Kang, Sung-Nam Chang, Jin-Joo Kim, Kyong-Joo Lee, Eun-Jung Lee
  • Publication number: 20110163367
    Abstract: Semiconductor devices are provided. The semiconductor devices may include a plurality of gate structures disposed on a semiconductor substrate, each of the gate structures including a floating gate, an inter-gate dielectric layer, and a control gate. The semiconductor devices may also include liners on opposing sidewalls of adjacent ones of the gate structures. The liners may define a gap. A first width of the gap may be less than a second width of the gap.
    Type: Application
    Filed: March 17, 2011
    Publication date: July 7, 2011
    Inventors: Dae-Woong Kang, Sung-Nam Chang, Jin-Joo Kim, Kyong-Joo Lee, Eun-Jung Lee
  • Publication number: 20100295113
    Abstract: Semiconductor devices including a plurality of gate structures disposed on a semiconductor substrate are provided. Each of the gate structures includes a tunnel dielectric layer, a floating gate, an inter-gate dielectric layer, a control gate, and a mask layer. Liners cover opposing sidewalls of adjacent floating gates. Spacers are disposed on the liners, the spacers protruding from opposing sidewalls of adjacent ones of the gate structures, and a top of each of the spacers is disposed below a top of a corresponding one of the gate structures. The liners define sidewalls of respective air gaps and the spacers define tops of the respective air gaps.
    Type: Application
    Filed: July 30, 2010
    Publication date: November 25, 2010
    Inventors: Dae-Woong Kang, Sung-Nam Chang, Jin-Joo Kim, Kyong-Joo Lee, Eun-Jung Lee
  • Patent number: 7666717
    Abstract: A non-volatile device includes a semiconductor substrate having a fuse window region. At least one fuse crosses the fuse window region. Field regions are arranged outside of the fuse window region and arranged under end portions of the at least one fuse. An isolation layer is configured to isolate the field regions. A fuse insulating layer is interposed between the at least one fuse and the field regions.
    Type: Grant
    Filed: October 5, 2006
    Date of Patent: February 23, 2010
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jong-Sun Sel, Sung-Nam Chang, Dae-Woong Kang, Bong-Tae Park
  • Patent number: 7598564
    Abstract: A non-volatile memory device including a barrier spacer that serves to protect a control gate, including a metal layer, from damage that may result from exposure to a cleaning solution and/or oxygen. With the barrier spacer layer, a cleaning process using a high-power cleaning solution may be used to effectively remove etch byproducts. An oxidation process may be performed to cure etch damage of an intergate dielectric pattern, a floating gate and a gate insulator. The barrier spacer and/or the oxidation process enable a non-volatile memory device having enhanced speed and reliability to be formed.
    Type: Grant
    Filed: May 31, 2006
    Date of Patent: October 6, 2009
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Dae-woong Kang, Sung-nam Chang, Kwang-jae Lee
  • Patent number: 7508048
    Abstract: Methods of fabricating a semiconductor device having multi-gate insulation layers and semiconductor devices fabricated thereby are provided. The method includes forming a pad insulation layer and an initial high voltage gate insulation layer on a first region and a second region of a semiconductor substrate respectively. The initial high voltage gate insulation layer is formed to be thicker than the pad insulation layer. A first isolation layer that penetrates the pad insulation layer and is buried in the semiconductor substrate is formed to define a first active region in the first region, and a second isolation layer that penetrates the initial high voltage gate insulation layer and is buried in the semiconductor substrate is formed to define a second active region in the second region. The pad insulation layer is then removed to expose the first active region. A low voltage gate insulation layer is formed on the exposed first active region.
    Type: Grant
    Filed: January 15, 2004
    Date of Patent: March 24, 2009
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Dae-Woong Kang, Hong-Soo Kim, Jung-Dal Choi, Kyu-Charn Park, Seong-Soon Cho, Yong-Sik Yim, Sung-Nam Chang
  • Publication number: 20070096202
    Abstract: Methods for forming semiconductor memory structures including air gaps between adjacent gate structures are provided. The volume of the air gaps is maximized and the width thereof made uniform in order to minimize the parasitic capacitance and any variance therein between the gate structures. The methods include forming an insulation layer between adjacent gate structures and subsequently etching the insulation layer to leave an air gap. Devices fabricated in accordance with the methods are also provided.
    Type: Application
    Filed: October 20, 2006
    Publication date: May 3, 2007
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Dae-Woong KANG, Sung-Nam CHANG, Jin-Joo KIM, Kyong-Joo LEE, Eun-Jung LEE
  • Publication number: 20070087496
    Abstract: A non-volatile device includes a semiconductor substrate having a fuse window region. At least one fuse crosses the fuse window region. Field regions are arranged outside of the fuse window region and arranged under end portions of the at least one fuse An isolation layer is configured to isolate the field regions. A fuse insulating layer is interposed between the at least one fuse and the field regions.
    Type: Application
    Filed: October 5, 2006
    Publication date: April 19, 2007
    Inventors: Jong-Sun Sel, Sung-Nam Chang, Dae-Woong Kang, Bong-Tae Park
  • Publication number: 20070034938
    Abstract: A non-volatile memory device including a barrier spacer that serves to protect a control gate, including a metal layer, from damage that may result from exposure to a cleaning solution and/or oxygen. With the barrier spacer layer, a cleaning process using a high-power cleaning solution may be used to effectively remove etch byproducts. An oxidation process may be performed to cure etch damage of an intergate dielectric pattern, a floating gate and a gate insulator. The barrier spacer and/or the oxidation process enable a non-volatile memory device having enhanced speed and reliability to be formed.
    Type: Application
    Filed: May 31, 2006
    Publication date: February 15, 2007
    Inventors: Dae-woong Kang, Sung-nam Chang, Kwang-jae Lee
  • Patent number: 7132728
    Abstract: A non-volatile device includes a semiconductor substrate having a fuse window region. At least one fuse crosses the fuse window region. Field regions are arranged outside of the fuse window region and arranged under end portions of the at least one fuse. An isolation layer is configured to isolate the field regions. A fuse insulating layer is interposed between the at least one fuse and the field regions.
    Type: Grant
    Filed: December 22, 2004
    Date of Patent: November 7, 2006
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jong-Sun Sel, Sung-Nam Chang, Dae-Woong Kang, Bong-Tae Park
  • Publication number: 20050139953
    Abstract: A non-volatile device includes a semiconductor substrate having a fuse window region. At least one fuse crosses the fuse window region. Field regions are arranged outside of the fuse window region and arranged under end portions of the at least one fuse. An isolation layer is configured to isolate the field regions. A fuse insulating layer is interposed between the at least one fuse and the field regions.
    Type: Application
    Filed: December 22, 2004
    Publication date: June 30, 2005
    Inventors: Jong-Sun Sel, Sung-Nam Chang, Dae-Woong Kang, Bong-Tae Park