Patents by Inventor Daemian Raj BENJAMIN RAJ
Daemian Raj BENJAMIN RAJ has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240043994Abstract: Exemplary semiconductor processing systems may include a gas source coupled with a number of processing chambers. The gas source may include a controller. Each chamber may include an exhaust assembly having a foreline and a pump. The systems may include at least one abatement system coupled with each pump. The systems may include a plurality of exhaust lines that extend between each pump and the abatement system. The systems may include a dilution gas source coupled with each exhaust line. The systems may include a mass flow controller coupled between the dilution gas source and each exhaust line. The systems may include a temperature sensor coupled with each exhaust line between the pump and the abatement system. The temperature sensor may be communicatively coupled with the controller of the gas source, which may control flow of a gas to a chamber based on a measurement from the temperature sensor.Type: ApplicationFiled: August 8, 2022Publication date: February 8, 2024Applicant: Applied Materials, Inc.Inventors: Daemian Raj Benjamin Raj, Liliya I. Krivulina, Bharath Kumar Hanchanoor Rathnakara Gowda, Collen Leng, Syed A. Alam, Uwe P. Haller, Robert Casanova, Ryan Thomas Downey, Peter Standish
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Publication number: 20240044000Abstract: A faceplate for a substrate process chamber comprises a first and second surface. The second surface is shaped such that the second surface includes a peak and a distance between the first and second surface varies across the width of the faceplate. The second surface of the faceplate is exposed to a processing volume of the process chamber. Further, the faceplate may be part of a lid assembly for the process chamber. The lid assembly may include a blocker plate facing the first surface of the faceplate. A distance between the blocker plate and the first surface is constant.Type: ApplicationFiled: October 18, 2023Publication date: February 8, 2024Inventors: Shailendra SRIVASTAVA, Sai Susmita ADDEPALLI, Nikhil Sudhindrarao JORAPUR, Daemian Raj BENJAMIN RAJ, Amit Kumar BANSAL, Juan Carlos ROCHA-ALVAREZ, Gregory Eugene CHICHKANOFF, Xinhai HAN, Masaki OGATA, Kristopher ENSLOW, Wenjiao WANG
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Publication number: 20230420245Abstract: In one example, a process chamber comprises a lid assembly, a first gas supply, second gas supply, a chamber body, and a substrate support. The lid assembly comprises a gas box, a gas conduit passing through the gas box, a blocker plate, and a showerhead. The gas box comprises a gas distribution plenum, and a distribution plate comprising a plurality of holes aligned with the gas distribution plenum. The blocker plate is coupled to the gas box forming a first plenum. The showerhead is coupled to the blocker plate forming a second plenum. The first gas supply is coupled to the gas distribution plenum, and the second gas supply system is coupled to the gas conduit. The chamber body is coupled to the showerhead, and the substrate support assembly is disposed within an interior volume of the chamber body, and is configured to support a substrate during processing.Type: ApplicationFiled: September 11, 2023Publication date: December 28, 2023Inventors: Daemian Raj BENJAMIN RAJ, Gregory Eugene CHICHKANOFF, Shailendra SRIVASTAVA, Sai Susmita ADDEPALLI, Nikhil Sudhindrarao JORAPUR, Abhigyan KESHRI, Allison YAU
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Patent number: 11851759Abstract: A faceplate for a substrate process chamber comprises a first and second surface. The second surface is shaped such that the second surface includes a peak and a distance between the first and second surface varies across the width of the faceplate. The second surface of the faceplate is exposed to a processing volume of the process chamber. Further, the faceplate may be part of a lid assembly for the process chamber. The lid assembly may include a blocker plate facing the first surface of the faceplate. A distance between the blocker plate and the first surface is constant.Type: GrantFiled: December 16, 2022Date of Patent: December 26, 2023Assignee: APPLIED MATERIALS, INC.Inventors: Shailendra Srivastava, Sai Susmita Addepalli, Nikhil Sudhindrarao Jorapur, Daemian Raj Benjamin Raj, Amit Kumar Bansal, Juan Carlos Rocha-Alvarez, Gregory Eugene Chichkanoff, Xinhai Han, Masaki Ogata, Kristopher Enslow, Wenjiao Wang
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Publication number: 20230369072Abstract: Exemplary fluid delivery assemblies for a semiconductor processing system may include a liquid delivery source. The assemblies may include a heater that is fluidly coupled with an outlet of the liquid delivery source. The assemblies may include a liquid flow controller that is fluidly coupled with the liquid delivery source downstream of the heater. The assemblies may include a liquid vaporizer fluidly coupled with a downstream end of the liquid flow controller. The assemblies may include a chamber delivery line coupled with an output of the liquid vaporizer.Type: ApplicationFiled: May 13, 2022Publication date: November 16, 2023Applicant: Applied Materials, Inc.Inventors: Daemian Raj Benjamin Raj, Collen Leng, Syed A. Alam, Tianyang Li
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Patent number: 11798803Abstract: In one example, a process chamber comprises a lid assembly, a first gas supply, second gas supply, a chamber body, and a substrate support. The lid assembly comprises a gas box, a gas conduit passing through the gas box, a blocker plate, and a showerhead. The gas box comprises a gas distribution plenum, and a distribution plate comprising a plurality of holes aligned with the gas distribution plenum. The blocker plate is coupled to the gas box forming a first plenum. The showerhead is coupled to the blocker plate forming a second plenum. The first gas supply is coupled to the gas distribution plenum, and the second gas supply system is coupled to the gas conduit. The chamber body is coupled to the showerhead, and the substrate support assembly is disposed within an interior volume of the chamber body, and is configured to support a substrate during processing.Type: GrantFiled: April 9, 2020Date of Patent: October 24, 2023Assignee: Applied Materials, Inc.Inventors: Daemian Raj Benjamin Raj, Gregory Eugene Chichkanoff, Shailendra Srivastava, Sai Susmita Addepalli, Nikhil Sudhindrarao Jorapur, Abhigyan Keshri, Allison Yau
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Patent number: 11776835Abstract: Exemplary semiconductor processing systems may include a processing chamber and an electrostatic chuck disposed at least partially within the processing chamber. The electrostatic chuck may include at least one electrode and a heater. A semiconductor processing system may include a power supply to provide a signal to the electrode to provide electrostatic force to secure a substrate to the electrostatic chuck. The system may also include a filter communicatively coupled between the power supply and the electrode. The filter is configured to remove or reduce noise introduced into the chucking signal by operating the heater while the electrostatic force on the substrate is maintained. The filter may include active circuitry, passive circuitry, or both, and may include an adjustment circuit to set the gain of the filter so that an output signal level from the filter corresponds to an input signal level for the filter.Type: GrantFiled: September 29, 2020Date of Patent: October 3, 2023Assignee: Applied Materials, Inc.Inventors: Zheng John Ye, Daemian Raj Benjamin Raj, Rana Howlader, Abhigyan Keshri, Sanjay G. Kamath, Dmitry A. Dzilno, Juan Carlos Rocha-Alvarez, Shailendra Srivastava, Kristopher R. Enslow, Xinhai Han, Deenesh Padhi, Edward P. Hammond
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Publication number: 20230288007Abstract: Exemplary modular gas blocks may include a body having inlet and outlet ends. The body may define a portion of a first gas path along a length of the body and may define a second gas path along a width of the body. The first gas path may include channel segments defined within the body. The inlet end may define a gas inlet that is coupled with the first gas path. The body may define first fluid ports that are coupled with the first gas path. A fluid port of the first fluid ports may be coupled with the gas inlet. The first fluid ports may be coupled with one another via a respective channel segment. An upper surface may define a lateral fluid port that is spaced apart from a first fluid port along the width and is coupled with the first fluid port via the second gas path.Type: ApplicationFiled: March 10, 2023Publication date: September 14, 2023Applicant: Applied Materials, Inc.Inventors: Daemian Raj Benjamin Raj, Kiran Garikipati, Kurt R. Langeland, Syed A. Alam
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Publication number: 20230139688Abstract: Exemplary modular gas delivery assemblies may include a plurality of modular gas blocks coupled together. Each gas block may include an upper portion and a lower portion. A first end of the upper portion may extend beyond a first end of the lower portion and a second end of the lower portion may extend beyond a second end of the upper portion. A first fluid channel may include a first fluid port, a second fluid port, and a third fluid port. The block body may define a second fluid channel that extends transversely to the first fluid channel. A first modular gas block may be coupled with a second modular gas block and a third modular gas block such that the first fluid channels of each of the first, second, and third modular gas blocks are fluidly coupled with one another.Type: ApplicationFiled: October 29, 2021Publication date: May 4, 2023Applicant: Applied Materials, Inc.Inventors: Daemian Raj Benjamin Raj, Kiran Garikipati, Syed A. Alam, Kurt R. Langeland
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Publication number: 20230131809Abstract: A method and apparatus for controlling RF plasma attributes is disclosed. Some embodiments of the disclosure provide RF sensors within processing chambers operable at high temperatures. Some embodiments provide methods of measuring RF plasma attributes using RF sensors within a processing chamber to provide feedback control for an RF generator.Type: ApplicationFiled: December 23, 2022Publication date: April 27, 2023Applicant: Applied Materials, Inc.Inventors: Zheng John Ye, Daemian Raj Benjamin Raj, Shailendra Srivastava, Nikhil Sudhindrarao Jorapur, Ndanka O. Mukuti, Dmitry A. Dzilno, Juan Carlos Rocha
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Publication number: 20230123089Abstract: A faceplate for a substrate process chamber comprises a first and second surface. The second surface is shaped such that the second surface includes a peak and a distance between the first and second surface varies across the width of the faceplate. The second surface of the faceplate is exposed to a processing volume of the process chamber. Further, the faceplate may be part of a lid assembly for the process chamber. The lid assembly may include a blocker plate facing the first surface of the faceplate. A distance between the blocker plate and the first surface is constant.Type: ApplicationFiled: December 16, 2022Publication date: April 20, 2023Inventors: Shailendra SRIVASTAVA, Sai Susmita ADDEPALLI, Nikhil Sudhindrarao JORAPUR, Daemian Raj Benjamin RAJ, Amit Kumar BANSAL, Juan Carlos ROCHA-ALVAREZ, Gregory Eugene CHICHKANOFF, Xinhai HAN, Masaki OGATA, Kristopher ENSLOW, Wenjiao WANG
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Patent number: 11570879Abstract: A method and apparatus for controlling RF plasma attributes is disclosed. Some embodiments of the disclosure provide RF sensors within processing chambers operable at high temperatures. Some embodiments provide methods of measuring RF plasma attributes using RF sensors within a processing chamber to provide feedback control for an RF generator.Type: GrantFiled: August 19, 2020Date of Patent: January 31, 2023Assignee: APPLIED MATERIALS, INC.Inventors: Zheng John Ye, Daemian Raj Benjamin Raj, Shailendra Srivastava, Nikhil Sudhindrarao Jorapur, Ndanka O. Mukuti, Dmitry A. Dzilno, Juan Carlos Rocha
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Publication number: 20230011938Abstract: Exemplary semiconductor processing chambers may include a chamber body. The chambers may include a substrate support disposed within the chamber body. The substrate support may define a substrate support surface. The chambers may include a showerhead positioned supported atop the chamber body. The substrate support and a bottom surface of the showerhead may at least partially define a processing region within the semiconductor processing chamber. The showerhead may define a plurality of apertures through the showerhead. The bottom surface of the showerhead may define an annular groove or ridge that is positioned directly above at least a portion of the substrate support.Type: ApplicationFiled: July 9, 2021Publication date: January 12, 2023Applicant: Applied Materials, Inc.Inventors: Saketh Pemmasani, Daemian Raj Benjamin Raj, Xiaopu Li, Akshay Dhanakshirur, Mayur Govind Kulkarni, Madhu Santosh Kumar Mutyala, Deenesh Padhi, Hang Yu
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Patent number: 11530482Abstract: A faceplate for a substrate process chamber comprises a first and second surface. The second surface is shaped such that the second surface includes a peak and a distance between the first and second surface varies across the width of the faceplate. The second surface of the faceplate is exposed to a processing volume of the process chamber. Further, the faceplate may be part of a lid assembly for the process chamber. The lid assembly may include a blocker plate facing the first surface of the faceplate. A distance between the blocker plate and the first surface is constant.Type: GrantFiled: June 5, 2020Date of Patent: December 20, 2022Assignee: APPLIED MATERIALS, INC.Inventors: Shailendra Srivastava, Sai Susmita Addepalli, Nikhil Sudhindrarao Jorapur, Daemian Raj Benjamin Raj, Amit Kumar Bansal, Juan Carlos Rocha-Alvarez, Gregory Eugene Chichkanoff, Xinhai Han, Masaki Ogata, Kristopher Enslow, Wenjiao Wang
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Patent number: 11501993Abstract: Exemplary support assemblies may include an electrostatic chuck body defining a substrate support surface. The assemblies may include a support stem coupled with the electrostatic chuck body. The assemblies may include a heater embedded within the electrostatic chuck body. The assemblies may also include an electrode embedded within the electrostatic chuck body between the heater and the substrate support surface. The substrate support assemblies may be characterized by a leakage current through the electrostatic chuck body of less than or about 4 mA at a temperature of greater than or about 500° C. and a voltage of greater than or about 600 V.Type: GrantFiled: July 22, 2020Date of Patent: November 15, 2022Assignee: Applied Materials, Inc.Inventors: Jian Li, Juan Carlos Rocha-Alvarez, Zheng John Ye, Daemian Raj Benjamin Raj, Shailendra Srivastava, Xinhai Han, Deenesh Padhi, Kesong Hu, Chuan Ying Wang
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Patent number: 11367594Abstract: Exemplary semiconductor processing chambers may include a gasbox characterized by a first surface and a second surface opposite the first surface. The gasbox may define a central aperture. The gasbox may define an annular channel extending about the central aperture. The annular channel may be fluidly accessible from the first surface of the gasbox. The gasbox may further define a plurality of outlet apertures extending from the annular channel through the second surface of the gasbox.Type: GrantFiled: November 27, 2019Date of Patent: June 21, 2022Assignee: Applied Materials, Inc.Inventors: Mingle Tong, Li-Qun Xia, Daemian Raj Benjamin Raj
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Patent number: 11339475Abstract: An apparatus and a method for depositing a film layer that may have minimum contribution to overlay error after a sequence of deposition and lithographic exposure processes are provided. In one example, a method includes positioning a substrate on a substrate support in a process chamber, and flowing a deposition gas mixture comprising a silicon containing gas and a reacting gas to the process chamber through a showerhead having a convex surface facing the substrate support or a concave surface facing the substrate support in accordance with a stress profile of the substrate. A plasma is formed in the presence of the deposition gas mixture in the process chamber by applying an RF power to multiple coupling points of the showerhead that are symmetrically arranged about a center point of the showerhead. A deposition process is then performed on the substrate.Type: GrantFiled: November 8, 2019Date of Patent: May 24, 2022Assignee: Applied Materials, Inc.Inventors: Xinhai Han, Deenesh Padhi, Daemian Raj Benjamin Raj, Kristopher Enslow, Wenjiao Wang, Masaki Ogata, Sai Susmita Addepalli, Nikhil Sudhindrarao Jorapur, Gregory Eugene Chichkanoff, Shailendra Srivastava, Jonghoon Baek, Zakaria Ibrahimi, Juan Carlos Rocha-Alvarez, Tza-Jing Gung
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Publication number: 20220119952Abstract: Exemplary deposition methods may include electrostatically chucking a semiconductor substrate at a first voltage within a processing region of a semiconductor processing chamber. The methods may include performing a deposition process. The deposition process may include forming a plasma within the processing region of the semiconductor processing chamber. The methods may include halting formation of the plasma within the semiconductor processing chamber. The methods may include, simultaneously with the halting, increasing the first voltage of electrostatic chucking to a second voltage. The methods may include purging the processing region of the semiconductor processing chamber.Type: ApplicationFiled: October 20, 2020Publication date: April 21, 2022Applicant: Applied Materials, Inc.Inventors: Rana Howlader, Hang Yu, Madhu Santosh Kumar Mutyala, Zheng John Ye, Abhigyan Keshri, Sanjay Kamath, Daemian Raj Benjamin Raj, Deenesh Padhi
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Publication number: 20220102179Abstract: Exemplary semiconductor processing systems may include a processing chamber and an electrostatic chuck disposed at least partially within the processing chamber. The electrostatic chuck may include at least one electrode and a heater. A semiconductor processing system may include a power supply to provide a signal to the electrode to provide electrostatic force to secure a substrate to the electrostatic chuck. The system may also include a filter communicatively coupled between the power supply and the electrode. The filter is configured to remove or reduce noise introduced into the chucking signal by operating the heater while the electrostatic force on the substrate is maintained. The filter may include active circuitry, passive circuitry, or both, and may include an adjustment circuit to set the gain of the filter so that an output signal level from the filter corresponds to an input signal level for the filter.Type: ApplicationFiled: September 29, 2020Publication date: March 31, 2022Applicant: Applied Materials, Inc.Inventors: Zheng John Ye, Daemian Raj Benjamin Raj, Rana Howlader, Abhigyan Keshri, Sanjay G. Kamath, Dmitry A. Dzilno, Juan Carlos Rocha-Alvarez, Shailendra Srivastava, Kristopher R. Enslow, Xinhai Han, Deenesh Padhi, Edward P. Hammond
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Publication number: 20220020570Abstract: Exemplary semiconductor processing systems may include a processing chamber including a lid stack having an output manifold. The systems may include a gas panel. The systems may include an input manifold. The input manifold may fluidly couple the gas panel with the output manifold of the processing chamber. A delivery line may extend from the input manifold to the output manifold. The systems may include a first transmission line extending from a first set of precursor sources of the gas panel to the delivery line. The systems may include a second transmission line extending from a second set of precursor sources of the gas panel to the delivery line. The second transmission line may be switchably coupled between the delivery line and an exhaust of the semiconductor processing system.Type: ApplicationFiled: July 19, 2020Publication date: January 20, 2022Applicant: Applied Materials, Inc.Inventors: Sai Susmita Addepalli, Yue Chen, Abhigyan Keshri, Qiang Ma, Zhijun Jiang, Shailendra Srivastava, Daemian Raj Benjamin Raj, Ganesh Balasubramanian