Abstract: A system acquires a temperature TB of a temperature-controlling medium before a temperature change during execution of a plurality of processes n (n is identifier of process and is natural number that is greater than one) in each of which heat is input to a substrate placed on a placement surface of a stage, wherein the placement surface on which the substrate is placed is formed on the stage, a flow path through which the temperature-controlling medium having an adjusted temperature flows is formed in the stage, and a discharge port via which heat transfer gas is discharged toward the placement surface is formed in the stage; and for each of the processes n, a pressure Pn of heat transfer gas supplied to the discharge port and a temperature TWn of the substrate. The system also adjusts a pressure of heat transfer gas so as to control temperature of substrate.

Abstract: A placing table includes a placing surface, a flow path formed inside to allow a temperature control medium to flow therein, and a discharge opening through which a heat transfer gas is discharged. A gas supply is configured to supply the heat transfer gas to be discharged through the discharge opening. A measurement unit is configured to measure a temperature of the temperature control medium. A controller is configured to control, when the temperature of the temperature control medium is changed by equal to or more than a predetermined temperature at a change timing, a pressure of the heat transfer gas to eliminate a temperature change of a substrate caused by a temperature change of the temperature control medium after a predetermined time taken before the temperature change of the substrate takes place due to the temperature change of the temperature control medium passes by from the change timing.

Abstract: A plasma processing method includes: plasma-processing a substrate placed on a surface of a placement table while causing a coolant of 0° C. or lower to flow through a coolant flow path formed inside the table; placing a dummy substrate on the surface of the placement table in place of the substrate; and removing a reaction product generated due to the plasma processing of the substrate by the plasma of the processing gas from a peripheral edge portion of the surface of the placement table while heating the surface of placement table by the plasma of the processing gas via the dummy substrate in a state where the dummy substrate is placed on the surface of the placement table.

Abstract: A plasma processing method capable of reducing an amount of deposit adhering to an upper electrode or removing the deposit from the upper electrode is provided. In the plasma processing method, the upper electrode of a capacitively coupled plasma processing apparatus is cooled. A supporting table including a lower electrode is provided within a chamber of the plasma processing apparatus. The upper electrode is provided above the supporting table. During the cooling of the upper electrode, a film of a substrate is etched by plasma generated within the chamber. The substrate is placed on the supporting table during the etching of the film. A negative bias voltage is applied to the upper electrode while the etching is being performed.

Abstract: A plasma processing method capable of reducing an amount of deposit adhering to an upper electrode or removing the deposit from the upper electrode is provided. In the plasma processing method, the upper electrode of a capacitively coupled plasma processing apparatus is cooled. A supporting table including a lower electrode is provided within a chamber of the plasma processing apparatus. The upper electrode is provided above the supporting table. During the cooling of the upper electrode, a film of a substrate is etched by plasma generated within the chamber. The substrate is placed on the supporting table during the etching of the film. A negative bias voltage is applied to the upper electrode while the etching is being performed.

Abstract: A plasma processing method includes: plasma-processing a substrate placed on a surface of a placement table while causing a coolant of 0° C. or lower to flow through a coolant flow path formed inside the table; placing a dummy substrate on the surface of the placement table in place of the substrate; and removing a reaction product generated due to the plasma processing of the substrate by the plasma of the processing gas from a peripheral edge portion of the surface of the placement table while heating the surface of placement table by the plasma of the processing gas via the dummy substrate in a state where the dummy substrate is placed on the surface of the placement table.

Abstract: An elastic member for an ink jet recording apparatus comprising a material containing 100 parts by weight of a block copolymer having a crystalline polyolefin block and an amorphous polyolefin block, 3 to 40 parts by weight of a polyolefin resin and 40 to 250 parts by weight of a softening agent.

Abstract: An elastic member for an ink jet recording apparatus comprising a material containing 100 parts by weight of a block copolymer having a crystalline polyolefin block and an amorphous polyolefin block, 3 to 40 parts by weight of a polyolefin resin and 40 to 250 parts by weight of a softening agent.