Abstract: Provided is a method for producing a joined body, the method including a first step of preparing a laminated body which includes a first member having a metal pillar provided on a surface thereof, a second member having an electrode pad provided on a surface thereof, and a joining material provided between the metal pillar and the electrode pad and containing metal particles and an organic compound, and a second step of heating the laminated body to sinter the joining material at a predetermined sintering temperature, in which the joining material satisfies the condition of the following Formula (I): (M1?M2)/M1×100?1.0??(I) [in Formula (I), M1 represents a mass of the joining material when a temperature of the joining material reaches the sintering temperature in the second step, and M2 represents a non-volatile content in the joining material.

Abstract: Methods for etching a carbon-containing feature are provided. The methods may include: providing a substrate having a carbon-containing feature formed thereon in a reaction space; supplying helium gas and an oxidizing to the reaction space; generating a plasma within the reaction space from a gas mixture comprising helium gas and the oxidizing gas; and anisotropically etching the carbon-containing feature utilizing the plasma to cause lateral etching of the carbon-containing feature.

Abstract: A method for fabricating a layer structure in a trench includes: simultaneously forming a dielectric film containing a Si—N bond on an upper surface, and a bottom surface and sidewalls of the trench, wherein a top/bottom portion of the film formed on the upper surface and the bottom surface and a sidewall portion of the film formed on the sidewalls are given different chemical resistance properties by bombardment of a plasma excited by applying voltage between two electrodes between which the substrate is place in parallel to the two electrodes; and substantially removing the sidewall portion of the film by wet etching which removes the sidewall portion of the film more predominantly than the top/bottom portion according to the different chemical resistance properties.

Abstract: Metallic layers can be selectively deposited on one surface of a substrate relative to a second surface of the substrate. In some embodiments, the metallic layers are selectively deposited on a first metallic surface relative to a second surface comprising silicon. In some embodiments the reaction chamber in which the selective deposition occurs may optionally be passivated prior to carrying out the selective deposition process. In some embodiments selectivity of above about 50% or even about 90% is achieved.

Abstract: Metallic layers can be selectively deposited on one surface of a substrate relative to a second surface of the substrate. In some embodiments, the metallic layers are selectively deposited on a first metallic surface relative to a second surface comprising silicon. In some embodiments the reaction chamber in which the selective deposition occurs may optionally be passivated prior to carrying out the selective deposition process. In some embodiments selectivity of above about 50% or even about 90% is achieved.

Abstract: A method for manufacturing a thermoelectric conversion module of the present invention is a method for manufacturing a thermoelectric conversion module including a thermoelectric semiconductor part in which a plurality of p-type semiconductors and a plurality of n-type semiconductors are alternately arranged, and a high temperature side electrode bound to a binding surface of the p-type semiconductor and the n-type semiconductor on a high temperature heat source side and a low temperature side electrode bound to a binding surface of the p-type semiconductor and the n-type semiconductor on a low temperature heat source side, which electrically connect the p-type semiconductor and the n-type semiconductor adjacent to each other in series, and includes a binding step of binding at least one of the high temperature side electrode and the low temperature side electrode, and the p-type semiconductor and the n-type semiconductor together, by sintering a binding layer containing metal particles, which is provided bet

Abstract: Provided is a copper paste for joining including copper particles, second particles including a metal element other than copper, and a dispersion medium, in which the copper particles include submicro copper particles having a volume-average particle diameter of 0.12 ?m or more and 0.8 ?m or less and micro copper particles having a volume-average particle diameter of 2 ?m or more and 50 ?m or less, a sum of a content of the submicro copper particles and a content of the micro copper particles is 80% by mass or more of a sum of masses of the copper particles and the second particles, the content of the submicro copper particles is 30% by mass or more and 90% by mass or less of a sum of a mass of the submicro copper particles and a mass of the micro copper particles, and a content of the second particles is 0.01% by mass or more and 10% by mass or less of the sum of the masses of the copper particles and the second particles.

Abstract: A method for fabricating a layer structure in a trench includes: simultaneously forming a dielectric film containing a Si—N bond on an upper surface, and a bottom surface and sidewalls of the trench, wherein a top/bottom portion of the film formed on the upper surface and the bottom surface and a sidewall portion of the film formed on the sidewalls are given different chemical resistance properties by bombardment of a plasma excited by applying voltage between two electrodes between which the substrate is place in parallel to the two electrodes; and substantially removing the sidewall portion of the film by wet etching which removes the sidewall portion of the film more predominantly than the top/bottom portion according to the different chemical resistance properties.

Abstract: Provided is a copper paste for joining including copper particles, second particles including a metal element other than copper, and a dispersion medium, in which the copper particles include submicro copper particles having a volume-average particle diameter of 0.12 ?m or more and 0.8 ?m or less and micro copper particles having a volume-average particle diameter of 2 ?m or more and 50 ?m or less, a sum of a content of the submicro copper particles and a content of the micro copper particles is 80% by mass or more of a sum of masses of the copper particles and the second particles, the content of the submicro copper particles is 30% by mass or more and 90% by mass or less of a sum of a mass of the submicro copper particles and a mass of the micro copper particles, and a content of the second particles is 0.01% by mass or more and 10% by mass or less of the sum of the masses of the copper particles and the second particles.

Abstract: A method of spacer-defined direct patterning in semiconductor fabrication includes: providing a photoresist structure having a target width of lines; trimming the photoresist structures such that a width of each trimmed photoresist structure is smaller than the target width; depositing an oxide film on the template, thereby entirely covering with the oxide film an exposed top surface of the template and the trimmed photoresist structures; etching the oxide film-covered template to remove an unwanted portion of the oxide film without removing the trimmed photoresist structures so as to form vertical spacers isolated from each other, each spacer substantially maintaining the target width and being constituted by the trimmed photoresist structures and a vertical portion of the oxide film covering sidewalls of the trimmed photoresist structures; and etching the spacer-formed template to transfer a pattern constituted by the spacers to the template.

Abstract: Provided is A metal paste for joints, containing: metal particles; and monovalent carboxylic acid having 1 to 9 carbon atoms, in which the metal particles include sub-micro copper particles having a volume average particle diameter of 0.12 ?m to 0.8 ?m, and a content of the monovalent carboxylic acid having 1 to 9 carbon atoms is 0.015 part by mass to 0.2 part by mass with respect to 100 parts by mass of the metal particles.

Abstract: Methods for etching a carbon-containing feature are provided. The methods may include: providing a substrate having a carbon-containing feature formed thereon in a reaction space; supplying helium gas and an oxidizing to the reaction space; generating a plasma within the reaction space from a gas mixture comprising helium gas and the oxidizing gas; and anisotropically etching the carbon-containing feature utilizing the plasma to cause lateral etching of the carbon-containing feature.

Abstract: Provided is copper paste for joining including metal particles, and a dispersion medium. The metal particles include sub-micro copper particles having a volume-average particle size of 0.12 ?m to 0.8 ?m, and flake-shaped micro copper particles having a maximum particle size of 1 ?m to 20 ?m, and an aspect ratio of 4 or greater, and the amount of the micro copper particles contained, which are included in the metal particles and have a maximum particle size of 1 ?m to 20 ?m and an aspect ratio of less than 2, is 50% by mass or less on the basis of a total amount of the flake-shaped micro copper particles.

Abstract: Provided is a metal paste for joints, containing: metal particles; and linear or branched monovalent aliphatic alcohol having 1 to 20 carbon atoms, in which the metal particles include sub-micro copper particles having a volume average particle diameter of 0.12 ?m to 0.8 ?M.

Abstract: Provided is a joined body including: a first member; a second member; and a sintered metal layer that joins the first member and the second member. The sintered metal layer includes a structure that is derived from flake-shaped copper particles which are oriented in approximately parallel to an interface between the first member or the second member, and the sintered metal layer, and the amount of copper contained in the sintered metal layer is 65% by volume or greater on the basis of a volume of the sintered metal layer.

Abstract: A method for fabricating a layer structure in a trench includes: simultaneously forming a dielectric film containing a Si—N bond on an upper surface, and a bottom surface and sidewalls of the trench, wherein a top/bottom portion of the film formed on the upper surface and the bottom surface and a sidewall portion of the film formed on the sidewalls are given different chemical resistance properties by bombardment of a plasma excited by applying voltage between two electrodes between which the substrate is place in parallel to the two electrodes; and substantially removing either one of but not both of the top/bottom portion and the sidewall portion of the film by wet etching which removes the one of the top/bottom portion and the sidewall portion of the film more predominantly than the other according to the different chemical resistance properties.

Abstract: Methods of forming silicon nitride thin films on a substrate in a reaction space under high pressure are provided. The methods can include a plurality of plasma enhanced atomic layer deposition (PEALD) cycles, where at least one PEALD deposition cycle comprises contacting the substrate with a nitrogen plasma at a process pressure of 20 Torr to 500 Torr within the reaction space. In some embodiments the silicon precursor is a silyly halide, such as H2SiI2. In some embodiments the processes allow for the deposition of silicon nitride films having improved properties on three dimensional structures. For example, such silicon nitride films can have a ratio of wet etch rates on the top surfaces to the sidewall of about 1:1 in dilute HF.

Abstract: A copper paste for pressureless bonding is a copper paste for pressureless bonding, containing: metal particles; and a dispersion medium, in which the metal particles include sub-micro copper particles having a volume average particle diameter of greater than or equal to 0.01 ?m and less than or equal to 0.8 ?m, and micro copper particles having a volume average particle diameter of greater than or equal to 2.0 ?m and less than or equal to 50 ?m, and the dispersion medium contains a solvent having a boiling point of higher than or equal to 300° C., and a content of the solvent having a boiling point of higher than or equal to 300° C. is greater than or equal to 2 mass % on the basis of a total mass of the copper paste for pressureless bonding.

Abstract: Metallic layers can be selectively deposited on one surface of a substrate relative to a second surface of the substrate. In some embodiments, the metallic layers are selectively deposited on a first metallic surface relative to a second surface comprising silicon. In some embodiments the reaction chamber in which the selective deposition occurs may optionally be passivated prior to carrying out the selective deposition process. In some embodiments selectivity of above about 50% or even about 90% is achieved.

Abstract: A method of forming spacers for spacer-defined multiple pattering (SDMP), includes: depositing a pattern transfer film by PEALD on the entire patterned surface of a template using halogenated silane as a precursor and nitrogen as a reactant at a temperature of 200° C. or less, which pattern transfer film is a silicon nitride film; dry-etching the template using a fluorocarbon as an etchant, and thereby selectively removing a portion of the pattern transfer film formed on a top of a core material and a horizontal portion of the pattern transfer film while leaving the core material and a vertical portion of the pattern transfer film as a vertical spacer, wherein a top of the vertical spacer is substantially flat; and dry-etching the core material, whereby the template has a surface patterned by the vertical spacer on a underlying layer.