Abstract: An aluminum wire with which, at the time of bonding a bonding wire for a power semiconductor, the wire is not detached from a wedge tool, and a long life is achieved in a power cycle test. The aluminum wire is made of an aluminum alloy having an aluminum purity of 99 mass % or more and contains, relative to a total amount of all elements of the aluminum alloy, a total of 0.01 mass % or more and 1 mass % or less of iron and silicon. In a lateral cross-section in a direction perpendicular to a wire axis of the aluminum wire, an orientation index of is 1 or more, an orientation index of is 1 or less, and an area ratio of precipitated particles is in a range of 0.02% or more to 2% or less.

Abstract: A semiconductor device includes a power module unit, a fin base, and a plurality of radiator fins. The power module unit and the fin base are integrated together, with a recess-projection portion formed on the power module unit being fitted to a recess-projection portion formed on the fin base. The plurality of radiator fins are integrally fitted on a heat radiation diffusion portion of the fin base.

Abstract: A semiconductor device includes a power module unit, a fin base, and a plurality of radiator fins. The power module unit and the fin base are integrated together, with a recess-projection portion formed on the power module unit being fitted to a recess-projection portion formed on the fin base. The plurality of radiator fins are integrally fitted on a heat radiation diffusion portion of the fin base.

Abstract: A metal component and a heat dissipation member are integrated with each other in a plurality of protrusion-recess portions where the plurality of recess portions and the plurality of protrusion portions contact each other. A first protrusion-recess portion as a part of the plurality of protrusion-recess portions is greater in height direction dimension than a second protrusion-recess portion other than the first protrusion-recess portion among the plurality of protrusion-recess portions. A wall surface of the first protrusion-recess portion includes a first wall surface portion having a first inclination angle to a height direction, and a second wall surface portion having a second inclination angle different from the first inclination angle.

Abstract: A thermal conductivity measurement device comprises: first and second clamping members which clamp an object; a heating member which has a contacting end surface which contacts a distal end surface of the first clamping member through a first axial correction member, and a distal end surface on the reverse side of the contacting end surface; a cooling member which has a contacting end surface which contacts a distal end surface of the second clamping member through a second axial correction member, and a distal end surface on the reverse side of the contacting end surface; a plurality of temperature sensors disposed on the clamping members; and a mechanism which applies a pressing force between the heating member and the cooling member. At least one surface of the first axial correction member and the second axial correction member has a convex curved shape, and the other surface is a flat surface.

Abstract: This thermal conductivity measurement apparatus has a first holding member which has an end face that contacts an object to be measured and a distal end face; a second holding member which has an end face that contacts an object to be measured and a distal end face; a heating member which has an end face which abuts the distal end face of the first holding member and a distal end face, and which heats the first holding member; a cooling member which has an end face that abuts the distal end face of the second holding member and a distal end face, and which cools the second holding member; a plurality of temperature sensors provided at the first and the second holding members; and a pressing force application mechanism that applies pressing force to the first holding member, the second holding member, and the object to be measured.

Abstract: This power semiconductor device is provided with: a substrate; and a semiconductor element which is bonded onto the substrate using a sinterable metal bonding material. The semiconductor element comprises: a base; a first conductive layer that is provided on a first surface of the base, said first surface being on the substrate side; and a second conductive layer that is provided on a second surface of the base, said second surface being on the reverse side of the first surface. The thickness of the first conductive layer is from 0.5 times to 2.0 times (inclusive) the thickness of the second conductive layer.

Abstract: A metal component and a heat dissipation member are integrated with each other in a plurality of protrusion-recess portions where the plurality of recess portions and the plurality of protrusion portions contact each other. A first protrusion-recess portion as a part of the plurality of protrusion-recess portions is greater in height direction dimension than a second protrusion-recess portion other than the first protrusion-recess portion among the plurality of protrusion-recess portions. A wall surface of the first protrusion-recess portion includes a first wall surface portion having a first inclination angle to a height direction, and a second wall surface portion having a second inclination angle different from the first inclination angle.

Abstract: A semiconductor device that reduces the deformation of a metal base due to pressure during transfer molding, to thereby suppress the occurrence of cracks in an insulating layer to achieve high electrical reliability. The semiconductor device includes: a metal member provided, on its lower surface, with a projection and a depression, and a projecting peripheral portion surrounding the projection and the depression and having a height greater than or equal to a height of the projection of the projection and the depression; an insulating layer formed on an upper surface of the metal member; a metal layer formed on an upper surface of the insulating layer; a semiconductor element joined to an upper surface of the metal layer; and a sealing resin to seal the semiconductor element, the metal layer, the insulating layer and the metal member.

Abstract: A thermal conductivity measurement device comprises: first and second clamping members which clamp an object; a heating member which has a contacting end surface which contacts a distal end surface of the first clamping member through a first axial correction member, and a distal end surface on the reverse side of the contacting end surface; a cooling member which has a contacting end surface which contacts a distal end surface of the second clamping member through a second axial correction member, and a distal end surface on the reverse side of the contacting end surface; a plurality of temperature sensors disposed on the clamping members; and a mechanism which applies a pressing force between the heating member and the cooling member. At least one surface of the first axial correction member and the second axial correction member has a convex curved shape, and the other surface is a flat surface.

Abstract: The power module of the invention includes a power element, a metal base for dissipating heat from the power element, a lead frame electrically connected to electrodes of the power element, and a resin enclosure that encapsulates the power element so that one surface of the metal base and a part of the lead frame are exposed from the enclosure. The resin enclosure of the power module includes: a body portion in which the power element and a part of the lead frame are placed, and at a bottom surface of which the one surface of the metal base is exposed; and a rib portion which is placed on the bottom surface of the body portion so as to surround an outer periphery of the metal base, and is formed to protrude from the bottom surface of the body portion in a direction perpendicular to the bottom surface.

Abstract: A semiconductor device includes a power module unit, a fin base, and a plurality of radiator fins. The power module unit and the fin base are integrated together, with a recess-projection portion formed on the power module unit being fitted to a recess-projection portion formed on the fin base. The plurality of radiator fins are integrally fitted on a heat radiation diffusion portion of the fin base.

Abstract: A stator of a rotating electric machine includes a stator core, a plurality of insulators and a plurality of concentrated winding coils. The stator core includes an annular yoke and a plurality of teeth. The insulators are located along outer peripheral wall surfaces of the teeth. Each of the insulators includes a plurality of first surfaces and a plurality of second surfaces. The second surfaces connect the first surfaces. The coils are fitted on the teeth on which the insulators have been placed from a radially inner side thereof. The first surfaces of each of the insulators are in contact with inner peripheral surfaces of the coil that is placed on the outer periphery of the insulator.

Abstract: The power module of the invention includes a power element, a metal base for dissipating heat from the power element, a lead frame electrically connected to electrodes of the power element, and a resin enclosure that encapsulates the power element so that one surface of the metal base and a part of the lead frame are exposed from the enclosure. The resin enclosure of the power module includes: a body portion in which the power element and a part of the lead frame are placed, and at a bottom surface of which the one surface of the metal base is exposed; and a rib portion which is placed on the bottom surface of the body portion so as to surround an outer periphery of the metal base, and is formed to protrude from the bottom surface of the body portion in a direction perpendicular to the bottom surface.

Abstract: This power semiconductor device is provided with: a substrate; and a semiconductor element which is bonded onto the substrate using a sinterable metal bonding material. The semiconductor element comprises: a base; a first conductive layer that is provided on a first surface of the base, said first surface being on the substrate side; and a second conductive layer that is provided on a second surface of the base, said second surface being on the reverse side of the first surface. The thickness of the first conductive layer is from 0.5 times to 2.0 times (inclusive) the thickness of the second conductive layer.

Abstract: This thermal conductivity measurement apparatus has a first holding member which has an end face that contacts an object to be measured and a distal end face; a second holding member which has an end face that contacts an object to be measured and a distal end face; a heating member which has an end face which abuts the distal end face of the first holding member and a distal end face, and which heats the first holding member; a cooling member which has an end face that abuts the distal end face of the second holding member and a distal end face, and which cools the second holding member; a plurality of temperature sensors provided at the first and the second holding members; and a pressing force application mechanism that applies pressing force to the first holding member, the second holding member, and the object to be measured.

Abstract: A semiconductor device that reduces the deformation of a metal base due to pressure during transfer molding, to thereby suppress the occurrence of cracks in an insulating layer to achieve high electrical reliability. The semiconductor device includes: a metal member provided, on its lower surface, with a projection and a depression, and a projecting peripheral portion surrounding the projection and the depression and having a height greater than or equal to a height of the projection of the projection and the depression; an insulating layer formed on an upper surface of the metal member; a metal layer formed on an upper surface of the insulating layer; a semiconductor element joined to an upper surface of the metal layer; and a sealing resin to seal the semiconductor element, the metal layer, the insulating layer and the metal member.

Abstract: A swaged heat includes a fin base having an outer periphery, and formed with a first fin insert groove and a second fin insert groove interposing a swage portion of a bi-forked shape in between, a first fin fixed to the first fin insert groove of the fin base using the swage portion, a second fin fixed to the second fin insert groove of the fin base using the swage portion, a panel having an opening portion, and placed on the outer periphery of the fin base. The thickness of the outer periphery is smaller than that of the fin base.

Abstract: Two or more switching devices (36) and two or more lead frames (41, 42, 43, and 44) are integrally molded by use of a molding resin (37) so that a power module (30) is formed; the power module (30) is made to adhere to a heat sink (32) via an insulating material (31); the power module (30) and the heat sink (32) are fixed to a housing (33) of the power module composite (23); the power module composite (23) is fixed to a case (6) of an electric rotating machine (1) via the housing (33).

Abstract: A rotating electrical machine includes: a case; a rotor; a stator; a control portion including a field circuit portion used to supply a current to a control circuit and the field winding; a power circuit portion controlling a stator current; a heat sink installed so as to cool the control portion and the power circuit portion; a first waterproof portion providing waterproofing to signal terminals of the power circuit portion and the field circuit portion; a second waterproof portion provided with through-holes from which a part of the control portion and the power circuit portion is exposed and providing waterproofing between the control portion as well as the power circuit portion and the heat sink; and insulation portions installed in the through-holes of the second waterproof portion and isolating the control portion and the power circuit portion from the heat sink.