Abstract: To provide a piezoelectric body film and a piezoelectric element from which an excellent piezoelectric characteristic can be obtained even in a high-temperature environment and a method for manufacturing a piezoelectric element. A piezoelectric body film of the present invention is a piezoelectric body film containing a perovskite-type oxide represented by Formula (1), in which a content q of Nb with respect to the number of all atoms in the perovskite-type oxide and a ratio r of a diffraction peak intensity from a (200) plane to a diffraction peak intensity from a (100) plane of the perovskite-type oxide, which is measured using an X-ray diffraction method, satisfy Formula (2), Formula (1) A1+?[(ZryTi1-y)1-xNbx]O2, Formula (2) 0.35?r/q<0.

Abstract: In a conductive film, a cured film formed of a photosensitive resin composition including at least one of monomers represented by Formulae (1) and (2), a clay mineral, and a photopolymerization initiator is provided as a protective layer of a lead-out wiring part of the conductive film that functions as a touch sensor.

Abstract: Ageing myocardium undergoes structural and functional changes characterized by progressive cardiomyocyte hypertrophy, interstitial fibrosis and inflammation ultimately leading to diastolic and systolic dysfunction. Whilst most focus has been placed on established risk factors such as dyslipidaemia, hypertension and obesity in accelerating cardiac ageing, a potential role for amino acids has received little attention. Here the inventors show that increased phenylalanine (PA) levels induced in vitro cytosolic oxidative stress and senescence whilst in vivo led to senile-like cardiac deterioration in young mice. Moreover, they demonstrated that hepatic PA catabolism declined with age in a p21-dependent manner, whilst p21 deficiency prevented age-related cardiac dysfunction. Finally, the inventors found that Pah cofactor BH4 reversed the age-related rise in plasma PA levels and senile cardiac alterations.

Abstract: The present invention relates to methods and pharmaceutical compositions for the treatment of age-related cardiometabolic diseases. The inventors identified osteopontin (OPN) as a critical mediator of adipose tissue remodeling and senescence in obesity and extends this observation to related co-morbidities such as cardiomyopathy. Said result raises the possibility that inhibition of OPN activity may be of value in the prevention of cardiometabolic disease, in particular metabolic cardiomyopathy for which no specific treatment is yet available. In particular, the present invention relates to a method of treating an age-related cardiometabolic disease in an elderly subject in need thereof comprising administering to the subject a therapeutically effective amount of an osteopontin (OPN) inhibitor.

Abstract: Provided is a piezoelectric film that has a perovskite structure preferentially oriented to a (100) plane and that comprises a composite oxide represented by the following compositional formula: Pba[(ZrxTi1-x)1-yNby]bO3 wherein 0<x<1, and 0.10?y<0.13, in which in a case where a ratio I(200)/I(100) of a diffraction peak intensity I(200) from a perovskite (200) plane with respect to a diffraction peak intensity I(100) from a perovskite (100) plane, as measured by an X-ray diffraction method, is r, and a/b is q, 0.28r+0.9?q?0.32r+0.95, 1.10?q?1.25, and r?1.00 are satisfied.

Abstract: The present invention relates to methods and pharmaceutical compositions for the treatment of age-related cardiometabolic diseases. The inventors identified osteopontin (OPN) as a critical mediator of adipose tissue remodeling and senescence in obesity and extends this observation to related co-morbidities such as cardiomyopathy. Said result raises the possibility that inhibition of OPN activity may be of value in the prevention of cardiometabolic disease, in particular metabolic cardiomyopathy for which no specific treatment is yet available. In particular, the present invention relates to a method of treating an age-related cardiometabolic disease in an elderly subject in need thereof comprising administering to the subject a therapeutically effective amount of an osteopontin (OPN) inhibitor.

Abstract: The present invention provides a photoelectric conversion element having a photoelectric conversion film which exhibits excellent photoelectric conversion efficiency and responsiveness, an imaging device, an optical sensor, and a method of using a photoelectric conversion element. In the photoelectric conversion element of the invention, a photoelectric conversion material contains at least one selected from the group consisting of a compound represented by General formula (1), a compound represented by General formula (2), and a compound represented by General formula (3).

Abstract: To provide a piezoelectric body film and a piezoelectric element from which an excellent piezoelectric characteristic can be obtained even in a high-temperature environment and a method for manufacturing a piezoelectric element. A piezoelectric body film of the present invention is a piezoelectric body film containing a perovskite-type oxide represented by Formula (1), in which a content q of Nb with respect to the number of all atoms in the perovskite-type oxide and a ratio r of a diffraction peak intensity from a (200) plane to a diffraction peak intensity from a (100) plane of the perovskite-type oxide, which is measured using an X-ray diffraction method, satisfy Formula (2), Formula (1) A1+?[(ZryTi1-y)1-xNbx]O2, Formula (2) 0.35?r/q<0.

Abstract: In the piezoelectric film including a perovskite oxide which is represented by General Formula P, 0.1?x?0.3 and 0<y?0.49x are satisfied, A1+?[(Zr,Ti)1-x-yNbxScy]Oz . . . General Formula P, in General Formula P, A is an A-site element primarily containing Pb, ?=0 and z=3 are standard values, but ? and z may deviate from standard values in a range in which a perovskite structure is capable of being obtained.

Abstract: A piezoelectric element includes a substrate, and a lower electrode, a piezoelectric film, an adhesion layer, and an upper electrode provided on the substrate in this order, in which the piezoelectric film has a perovskite structure that is preferentially oriented to a (100) plane and is a composite oxide represented by the compositional formula Pb[(ZrxTi1-x)1-yNby]O3, where x satisfies 0<x<1 and y satisfies 0.10?y<0.13, I(200)/I(100), which is a ratio between a diffraction peak intensity I(100) from the perovskite plane and a diffraction peak intensity I(200) from a perovskite plane as measured by X-ray diffraction method, satisfies 0.85?I(200)/I(100)?1.00, and the adhesion layer contains a metal having an ionization energy of 0.34 eV or less.

Abstract: An object of the present invention is to provide a photoelectric conversion element which exhibits excellent heat resistance and responsiveness, and a photosensor and an imaging device which include the photoelectric conversion element. The photoelectric conversion element of the present invention includes: a transparent conductive film; a conductive film; and a photoelectric conversion film and an electron blocking layer which are disposed between the transparent conductive film and the conductive film, wherein the electron blocking layer contains a compound represented by the following Formula (1).

Abstract: In the piezoelectric film including a perovskite oxide which is represented by General Formula P, 0.1?x?0.3 and 0<y?0.49x are satisfied, A1+?[(Zr,Ti)1-x-yNbxScy]Oz . . . General Formula P, in General Formula P, A is an A-site element primarily containing Pb, ?=0 and z=3 are standard values, but ? and z may deviate from standard values in a range in which a perovskite structure is capable of being obtained.

Abstract: Provided is a photoelectric conversion element including: a lower electrode, a charge blocking layer which suppresses injection of a charge from the lower electrode, an organic layer which includes a photoelectric conversion layer, and an upper electrode which includes a transparent electrode layer, which are laminated in this order on a substrate. The photoelectric conversion layer is configured of an amorphous film and has a bulk hetero-structure of a P-type organic semiconductor and an N-type organic semiconductor formed of fullerenes. A difference between the ionization potential of the photoelectric conversion layer having the bulk hetero-structure and the electron affinity of the N-type semiconductor is 1.30 eV or greater.

Abstract: Provided is a piezoelectric film that has a perovskite structure preferentially oriented to a (100) plane and that comprises a composite oxide represented by the following compositional formula: Pba[(ZrxTi1-x)1-yNby]bO3 wherein 0<x<1, and 0.10?y<0.13, in which in a case where a ratio I(200)/I(100) of a diffraction peak intensity I(200) from a perovskite (200) plane with respect to a diffraction peak intensity I(100) from a perovskite (100) plane, as measured by an X-ray diffraction method, is r, and a/b is q, 0.28r+0.9?q?0.32r+0.95, 1.10?q?1.25, and r?1.00 are satisfied.

Abstract: The present invention provides a photoelectric conversion element having a photoelectric conversion film which exhibits excellent photoelectric conversion efficiency and responsiveness, an imaging device, an optical sensor, and a method of using a photoelectric conversion element. In the photoelectric conversion element of the invention, a photoelectric conversion material contains at least one selected from the group consisting of a compound represented by General formula (1), a compound represented by General formula (2), and a compound represented by General formula (3).

Abstract: The present invention provides a photoelectric conversion element having a photoelectric conversion film which exhibits excellent photoelectric conversion efficiency and responsiveness, an imaging device, an optical sensor, and a method of using a photoelectric conversion element. In the photoelectric conversion element of the invention, a photoelectric conversion material contains at least one selected from the group consisting of a compound represented by General formula (1), a compound represented by General formula (2), and a compound represented by General formula (3).

Abstract: A piezoelectric element includes a substrate, and a lower electrode, a piezoelectric film, an adhesion layer, and an upper electrode provided on the substrate in this order, in which the piezoelectric film has a perovskite structure that is preferentially oriented to a (100) plane and is a composite oxide represented by the compositional formula Pb[(ZrxTi1-x)1-yNby]O3, where x satisfies 0<x<1 and y satisfies 0.10?y<0.13, I(200)/I(100), which is a ratio between a diffraction peak intensity I(100) from the perovskite plane and a diffraction peak intensity I(200) from a perovskite plane as measured by X-ray diffraction method, satisfies 0.85?I(200)/I(100)?1.00, and the adhesion layer contains a metal having an ionization energy of 0.34 eV or less.

Abstract: An object of the invention is to provide: a photoelectric conversion material which has excellent deposition stability such that when the photoelectric conversion material is used in a photoelectric conversion element, the change in the performance of the element due to variations in the concentration of the photoelectric conversion material is small; a photoelectric conversion element using the photoelectric conversion material; and an optical sensor and an imaging element including the photoelectric conversion element. The photoelectric conversion material of the invention is a compound (A) expressed by the following Formula (1).

Abstract: Provided is a photoelectric conversion element including: a lower electrode, a charge blocking layer which suppresses injection of a charge from the lower electrode, an organic layer which includes a photoelectric conversion layer, and an upper electrode which includes a transparent electrode layer, which are laminated in this order on a substrate. The photoelectric conversion layer is configured of an amorphous film and has a bulk hetero-structure of a P-type organic semiconductor and an N-type organic semiconductor formed of fullerenes. A difference between the ionization potential of the photoelectric conversion layer having the bulk hetero-structure and the electron affinity of the N-type semiconductor is 1.30 eV or greater.

Abstract: An object of the present invention is to provide a photoelectric conversion element which exhibits excellent heat resistance and responsiveness, and a photosensor and an imaging device which include the photoelectric conversion element. The photoelectric conversion element of the present invention includes: a transparent conductive film; a conductive film; and a photoelectric conversion film and an electron blocking layer which are disposed between the transparent conductive film and the conductive film, wherein the electron blocking layer contains a compound represented by the following Formula (1).